ISA串行数据通讯卡WDM驱动程序的实现

摘要：本文讨论了使用WDM设计和实现ISA总线板卡Windows驱动所要完成的一些特殊处理．通过使用DriverWorks开发ISA总线串行数据通讯卡的WDM驱动程序实例，给出了开发步骤．     

基于PCI-E总线高速数据传输卡的WDM驱动设计

针对自主设计的基于PCI-E总线高速数据传输卡设备,在64位Windows系统下采用WDM驱动模式设计实现该设备驱动程序。介绍了WDM驱动程序开发过程,主要包括硬件访问、DMA高速数据传输和MSI中断等内容。并对所设计驱动程序进行测试验证,结果表明,该驱动程序具有较高的传输效率和可靠性,可应用于高速数据传输卡设备,且该驱动程序也可移植到其他类似的数据传输设备中。     

基于ISA总线的计算机与DSP的通信

在开放式数控系统结构模型的基础上,研究了基于ISA总线的DSP通信控制原理.采用中断方式完成了PC机和DSP之间的通信.介绍了以DriverWorks为工具开发ISA设备WDM驱动程序的方法,探讨了中断处理、驱动程序与应用程序之间的通信,简要说明了驱动程序的安装与调试.通过调试,系统设计运行稳定.     

PCM 高速遥测发送卡的WDM驱动程序设计

PCM高速遥测数据发送卡是一款基于PCI接口芯片9054的PCM信号源,工作码速率可达10 Mb/s.以在Windows 2000操作系统下设计PCM高速遥测数据发送卡的WDM驱动程序为例,介绍WDM驱动程序的基本特点和遥测数据发送卡的基本结构,详细讨论利用Driver Studio开发WDM驱动程序设计的关键技术,如设备初始化、软件FIFO、中断处理和DMA操作等.     

一种快速开发硬件设备驱动程序的方法

分析了WinDriver开发驱动程序的原理,介绍了在WindowsXP下利用WinDriver驱动程序开发软件来开发PC104（ISA）总线硬件设备驱动程序的流程和在VC＋＋编译环境下使用WinDriver产生API函数编程的方法,为硬件设备驱动程序的开发提供了一种简捷高效的途径。     

利用WinDriver开发设备驱动

开发Windows下的驱动程序已成为应用系统开发的难点之一,因为他需要熟悉内部操作系统和DDK编程及驱动模式。现在可以使用一些驱动开发工具如WinDriver等来编程。WinDriver是一个用于设备驱动程序开发的工具包,他简化了设备驱动编写和硬件访问应用,在保证驱动程序性能的基础上大大缩短了开发周期。本文介绍了在Windows操作系统下开发设备驱动的步骤及方法,并结合ISA板卡给出了开发实例。     

基于WDM的设备驱动程序设计和实现

设备驱动程序是硬件设备连接到计算机系统的软件接口。Windows驱动程序模型(WDM)是Windows平台的新一代设备驱动程序模型,WDM的研究对设计优良设备驱动程序有重要指导作用。文章分析WDM的工作原理和机制,着重介绍WDM设备驱动程序的设计和实现方法,并给出一个通用串行总线(USB)设备驱动程序的设计实例。该设计将USB驱动程序分为即插即用(PnP)、电源管理、USB初始化和USB设备输入/输出(I/O)等功能模块,具有结构清晰、易移植、复用性好等优点,在USB驱动程序设计中具有良好的应用价值。     

Windows平台DDK开发WDM设备驱动研究及应用

介绍了Microsoft公司的WDM驱动程序设计与开发的基本原理,运用微软的DDK开发工具包,实现了在Windows平台下USB接口设备过滤驱动程序的设计与开发.并结合实际开发的运用EZ-USB芯片的信号接收卡,给出了部分关键代码.     

PCI总线WDM驱动程序的设计方法与实例

探讨基于Windows操作系统的WDM型PCI总线接口卡驱动程序设计方法。DriverStudio软件是一套设备驱动程序的开发、调试和测试的工具包,介绍DriverStudio环境的配置方法及开发WDM驱动程序的详细步骤,设计PCI总线的驱动程序以及调用驱动程序的应用程序,实现了32位数据的传输。实验结果表明,采用DriverStudio软件能够简化驱动程序的编写,达到较高的编程效率。     

ISA板卡的WDM驱动程序开发

ISA总线作为一种工业标准体系结构总线，在工业控制中被广泛应用。本文从工程应用角度介绍了使用Numega DriverStudio开发ISA设备WDM驱动程序的方法，并简单介绍了其应用程序的开发过程。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.