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1.
Mesoscopic solar cells based on nanostructured oxide semiconductors are considered as a promising candidates to replace conventional photovoltaics employing costly materials. However, their overall performances are below the sufficient level required for practical usages. Herein, this study proposes an anodized Ti foam (ATF) with multidimensional and hierarchical architecture as a highly efficient photoelectrode for the generation of a large photocurrent. ATF photoelectrodes prepared by electrochemical anodization of freeze‐cast Ti foams have three favorable characteristics: (i) large surface area for enhanced light harvesting, (ii) 1D semiconductor structure for facilitated charge collection, and (iii) 3D highly conductive metallic current collector that enables exclusion of transparent conducting oxide substrate. Based on these advantages, when ATF is utilized in dye‐sensitized solar cells, short‐circuit photocurrent density up to 22.0 mA cm?2 is achieved in the conventional N719 dye‐I3?/I? redox electrolyte system even with an intrinsically inferior quasi‐solid electrolyte.  相似文献   

2.
In the introduction, some of the applications of the AIIIBV compounds are indicated. Their limitations are mentioned and two possibilities are suggested for overcoming these. In view of the AIIIBV compounds' outstanding contribution in recent years, the investigation of their isoelectric analogues, the AIIBIVC 2 V compounds, is suggested as a logical step. CdSnAs2 is shown to be the most investigated compound in this group, although several phosphides have potentialities as materials with energy gaps in the visible region of the spectrum. A comprehensive bibliography of the published work on AIIBIVC2/suV compounds is given.  相似文献   

3.
During the last few years, transition metal oxides (TMO) such as molybdenum tri‐oxide (MoO3), vanadium pent‐oxide (V2O5) or tungsten tri‐oxide (WO3) have been extensively studied because of their exceptional electronic properties for charge injection and extraction in organic electronic devices. These unique properties have led to the performance enhancement of several types of devices and to a variety of novel applications. TMOs have been used to realize efficient and long‐term stable p‐type doping of wide band gap organic materials, charge‐generation junctions for stacked organic light emitting diodes (OLED), sputtering buffer layers for semi‐transparent devices, and organic photovoltaic (OPV) cells with improved charge extraction, enhanced power conversion efficiency and substantially improved long term stability. Energetics in general play a key role in advancing device structure and performance in organic electronics; however, the literature provides a very inconsistent picture of the electronic structure of TMOs and the resulting interpretation of their role as functional constituents in organic electronics. With this review we intend to clarify some of the existing misconceptions. An overview of TMO‐based device architectures ranging from transparent OLEDs to tandem OPV cells is also given. Various TMO film deposition methods are reviewed, addressing vacuum evaporation and recent approaches for solution‐based processing. The specific properties of the resulting materials and their role as functional layers in organic devices are discussed.  相似文献   

4.
This review describes the principles of semiconductor spintronics, represents the physicochemical properties of materials based on manganese-alloyed AIIBIVC2V compounds, considers the results from theoretical simulation of magnetic properties of AIIBIVC2V alloyed with 3d metals, summarizes the basic approaches to explanation of ferromagnetism with Curie points above room temperature arising in AIIBIVC2V:Mn, and indicates promising ways to synthesize and study magnetic semiconductors based on chalcopyrites AIIBIVC2V in order to produce a suitable material for spintronic devices.  相似文献   

5.
Organic semiconductors demonstrate several advantages over conventional inorganic materials for novel electronic and optoelectronic applications, including molecularly tunable properties, flexibility, low-cost, and facile device integration. However, before organic semiconductors can be used for the next-generation devices, such as ultrafast photodetectors (PDs), it is necessary to develop new materials that feature both high mobility and ambient stability. Toward this goal, a highly stable PD based on the organic single crystal [PtBr2(5,5′-bis(CF3CH2OCH2)-2,2′-bpy)] (or “Pt complex (1o)”) is demonstrated as the active semiconductor channel—a material that features a lamellar molecular structure and high-quality, intraligand charge transfer. Benefitting from its unique crystal structure, the Pt-complex (1o) device exhibits a field-effect mobility of ≈0.45 cm2 V−1 s−1 without loss of significant performance under ambient conditions even after 40 days without encapsulation, as well as immersion in distilled water for a period of 24 h. Furthermore, the device features a maximum photoresponsivity of 1 × 103 A W−1, a detectivity of 1.1 × 1012 cm Hz1/2 W−1, and a record fast response/recovery time of 80/90 µs, which has never been previously achieved in other organic PDs. These findings strongly support and promote the use of the single-crystal Pt complex (1o) in next-generation organic optoelectronic devices.  相似文献   

6.
An attempt is made to study theoretically the thermoelectric power in ultrathin films ofA 3 II B 2 V semiconductors in the presence of a quantizing magnetic field by formulating a new magneto-dispersion law, within the framework ofk · p formalism incorporating the anisotropies in the band parameters. It is found, taking ultrathin films ofn-Cd3P2 as an example, that the same power decreases with increasing surface electron concentration and changes in an oscillatory manner with film thickness and quantizing magnetic field. In addition, the well-known results for parabolic energy bands have also obtained from our expressions as special cases.  相似文献   

7.
Precise control of the selective growth of heterostructures with specific composition and functionalities is an emerging and extremely challenging topic. Here, the first investigation of the difference in binding energy between a series of metal–semiconductor heterostructures based on layered V2–VI3 nanostructures is investigated by means of density functional theory. All lateral configurations show lower formation energy compared with that of the vertical ones, implying the selective growth of metal nanoparticles. The simulation results are supported by the successful fabrication of self‐assembled Ag/Cu‐nanoparticle‐decorated p‐type Sb2Te3 and n‐type Bi2Te3 nanoplates at their lateral sites through a solution reaction. The detailed nucleation–growth kinetics are well studied with controllable reaction times and precursor concentrations. Accompanied by the preserved topological structure integrity and electron transfer on the semiconductor host, exceptional properties such as dramatically increased electrical conductivity are observed thanks to the pre‐energy‐filtering effect before carrier injection. A zigzag thermoelectric generator is built using Cu/Ag‐decorated Sb2Te3 and Bi2Te3 as p–n legs to utilize the temperature gradient in the vertical direction. Synthetic approaches using similar chalcogenide nanoplates as building blocks, as well as careful control of the dopant metallic nanoparticles or semiconductors, are believed to be broadly applicable to other heterostructures with novel applications.  相似文献   

8.
A highly porous metal‐organic framework (MOF) incorporating two kinds of second building units (SBUs), i.e., dimeric paddlewheel (Zn2(COO)4) and tetrameric (Zn4(O)(CO2)6), is successfully assembled by the reaction of a tricarboxylate ligand with ZnII ion. Subsequently, single‐crystal‐to‐single‐crystal metal cation exchange using the constructed MOF is investigated, and the results show that CuII and CoII ions can selectively be introduced into the MOF without compromising the crystallinity of the pristine framework. This metal cation‐exchangeable MOF provides a useful platform for studying the metal effect on both gas adsorption and catalytic activity of the resulted MOFs. While the gas adsorption experiments reveal that CuII and CoII exchanged samples exhibit comparable CO2 adsorption capability to the pristine ZnII‐based MOF under the same conditions, catalytic investigations for the cycloaddition reaction of CO2 with epoxides into related carbonates demonstrate that ZnII‐based MOF affords the highest catalytic activity as compared with CuII and CoII exchanged ones. Molecular dynamic simulations are carried out to further confirm the catalytic performance of these constructed MOFs on chemical fixation of CO2 to carbonates. This research sheds light on how metal exchange can influence intrinsic properties of MOFs.  相似文献   

9.
Two‐dimensional materials with intrinsic magnetism have recently drawn intense interest for both the fundamental studies and potential technological applications. However, the studies to date have been largely limited to mechanically exfoliated materials. Herein, an atmospheric pressure chemical vapor deposition route to ultrathin group VB metal telluride MTe2 (M = V, Nb, Ta) nanoplates with thickness as thin as 3 nm is reported. It is shown that the resulting nanoplates can be systematically evolved from mostly thicker hexagonal domains to thinner triangular domains with an increasing flow rate of the carrier gas. X‐ray diffraction and transmission electron microscopy studies reveal MTe2 (M = V, Nb, Ta) nanoplates are high‐quality single crystals. High‐resolution scanning transmission electron microscope imaging reveals the VTe2 and NbTe2 nanoplates adopt the hexagonal 1T phase and the TaTe2 nanoplates show a monoclinic distorted 1T phase. Electronic transport studies show that MTe2 single crystals exhibit metallic behavior. Magnetic measurements show that VTe2 and NbTe2 exhibit ferromagnetism and TaTe2 shows paramagnetic behavior. The preparation of ultrathin few‐layered MTe2 nanoplates will open up exciting opportunities for the burgeoning field of spintronics, sensors, and magneto‐optoelectronics.  相似文献   

10.
Organic–inorganic halide perovskite (OHP) materials, for example, CH3NH3PbI3 (MAPbI3), have attracted significant interest for applications such as solar cells, photodectors, light‐emitting diodes, and lasers. Previous studies have shown that charged defects can migrate in perovskites under an electric field and/or light illumination, potentially preventing these devices from practical applications. Understanding and control of the defect generation and movement will not only lead to more stable devices but also new device concepts. Here, it is shown that the formation/annihilation of iodine vacancies (VI's) in MAPbI3 films, driven by electric fields and light illumination, can induce pronounced resistive switching effects. Due to a low diffusion energy barrier (≈0.17 eV), the VI's can readily drift under an electric field, and spontaneously diffuse with a concentration gradient. It is shown that the VI diffusion process can be suppressed by controlling the affinity of the contact electrode material to I? ions, or by light illumination. An electrical‐write and optical‐erase memory element is further demonstrated by coupling ion migration with electric fields and light illumination. These results provide guidance toward improved stability and performance of perovskite‐based optoelectronic systems, and can lead to the development of solid‐state devices that couple ionics, electronics, and optics.  相似文献   

11.
0D lead‐free metal halide nanocrystals (NCs) are an emerging class of materials with intriguing optical properties. Herein, colloidal synthetic routes are presented for the production of 0D Cs3Cu2X5 (X = I, Br, and Cl) NCs with orthorhombic structure and well‐defined morphologies. All these Cs3Cu2X5 NCs exhibit broadband blue‐green photoluminescence (PL) emissions in the range of 445–527 nm with large Stokes shifts, which are attributed to their intrinsic self‐trapped exciton (STE) emission characteristics. The high PL quantum yield of 48.7% is obtained from Cs3Cu2Cl5 NCs, while Cs3Cu2I5 NCs exhibit considerable air stability over 45 days. Intriguingly, as X is changed from I to Br and Cl, Cs3Cu2X5 NCs exhibit a continuous redshift of emission peaks, which is contrary to the blueshift in CsPbX3 perovskite NCs.  相似文献   

12.
Metal oxide hollow structures have received great attention because of their many promising applications in a wide range of fields. As electrode materials for lithium‐ion batteries (LIBs), metal oxide hollow structures provide high specific capacity, superior rate capability, and improved cycling performance. In this Research News, we summarize the recent research activities in the synthesis of metal oxide hollow nanostructures with controlled shape, size, composition, and structural complexity, as well as their applications in LIBs. By focusing on hollow structures of some binary metal oxides (such as SnO2, TiO2, Fe2O3, Co3O4) and complex metal oxides, we seek to provide some rational understanding on the effect of nanostructure engineering on the electrochemical performance of the active materials. It is thus anticipated that this article will shed some light on the development of advanced electrode materials for next‐generation LIBs.  相似文献   

13.
Recently, layered ultrathin 2D semiconductors, such as MoS2 and WSe2 are widely studied in nonvolatile memories because of their excellent electronic properties. Additionally, discrete 0D metallic nanocrystals and quantum dots (QDs) are considered to be outstanding charge‐trap materials. Here, a charge‐trap memory device based on a hybrid 0D CdSe QD–2D WSe2 structure is demonstrated. Specifically, ultrathin WSe2 is employed as the channel of the memory, and the QDs serve as the charge‐trap layer. This device shows a large memory window exceeding 18 V, a high erase/program current ratio (reaching up to 104), four‐level data storage ability, stable retention property, and high endurance of more than 400 cycles. Moreover, comparative experiments are carried out to prove that the charges are trapped by the QDs embedded in the Al2O3. The combination of 2D semiconductors with 0D QDs opens up a novelty field of charge‐trap memory devices.  相似文献   

14.
This Review provides a brief summary of the most recent research developments in the synthesis and application of nanostructured metal oxide semiconductors for dye sensitized and quantum dot sensitized solar cells. In these devices, the wide bandgap semiconducting oxide acts as the photoanode, which provides the scaffold for light harvesters (either dye molecules or quantum dots) and electron collection. For this reason, proper tailoring of the optical and electronic properties of the photoanode can significantly boost the functionalities of the operating device. Optimization of the functional properties relies with modulation of the shape and structure of the photoanode, as well as on application of different materials (TiO2, ZnO, SnO2) and/or composite systems, which allow fine tuning of electronic band structure. This aspect is critical because it determines exciton and charge dynamics in the photoelectrochemical system and is strictly connected to the photoconversion efficiency of the solar cell. The different strategies for increasing light harvesting and charge collection, inhibiting charge losses due to recombination phenomena, are reviewed thoroughly, highlighting the benefits of proper photoanode preparation, and its crucial role in the development of high efficiency dye sensitized and quantum dot sensitized solar cells.  相似文献   

15.
Organic semiconductors find a wide range of applications, such as in organic light emitting diodes, organic solar cells, and organic field effect transistors. One of their most striking disadvantages in comparison to crystalline inorganic semiconductors is their low charge‐carrier mobility, which manifests itself in major device constraints such as limited photoactive layer thicknesses. Trial‐and‐error attempts to increase charge‐carrier mobility are impeded by the complex interplay of the molecular and electronic structure of the material with its morphology. Here, the viability of a multiscale simulation approach to rationally design materials with improved electron mobility is demonstrated. Starting from one of the most widely used electron conducting materials (Alq3), novel organic semiconductors with tailored electronic properties are designed for which an improvement of the electron mobility by three orders of magnitude is predicted and experimentally confirmed.  相似文献   

16.
Organolead trihalide perovskite MAPbI3 shows a distinctive combination of properties such as being ferroelectric and semiconducting, with ion migration effects under poling by electric fields. The combination of its ferroelectric and semiconducting nature is used to make a light harvesting, self‐powered tactile sensor. This sensor interfaces ZnO nanosheets as a pressure‐sensitive drain on the MAPbI3 film and once poled is operational for at least 72 h with just light illumination. The sensor is monolithic in structure, has linear response till 76 kPa, and is able to operate continuously as the energy harvesting mechanism is decoupled from its pressure sensing mechanism. It has a sensitivity of 0.57 kPa?1, which can be modulated by the strength of the poling field. The understanding of these effects in perovskite materials and their application in power source free devices are of significance to a wide array of fields where these materials are being researched and applied.  相似文献   

17.
Advance of photonics media is restrained by the lack of structuring techniques for the 3D fabrication of active materials with long-range periodicity. A methodology is reported for the engineering of tunable resonant photonic media with thickness exceeding the plasmonic near-field enhancement region by more than two orders of magnitude. The media architecture consists of a stochastically ordered distribution of plasmonic nanocrystals in a fractal scaffold of high-index semiconductors. This plasmonic-semiconductor fractal media supports the propagation of surface plasmons with drastically enhanced intensity over multiple length scales, overcoming the 2D limitations of established metasurface technologies. The fractal media are used for the fabrication of plasmonic optical gas sensors, achieving a limit of detection of 0.01 vol% at room temperature and sensitivity up to 1.9 nm vol%−1, demonstrating almost a fivefold increase with respect to an optimized planar geometry. Beneficially to their implementation, the self-assembly mechanism of this fractal architecture allows fabrication of micrometer-thick media over surfaces of several square centimeters in a few seconds. The designable optical features and intrinsic scalability of these photonic fractal metamaterials provide ample opportunities for applications, bridging across transformation optics, sensing, and light harvesting.  相似文献   

18.
MoS2 and generally speaking, the wide family of transition‐metal dichalcogenides represents a solid nanotechnology platform on which to engineer a wealth of new and outperforming applications involving 2D materials. An even richer flexibility can be gained by extrinsically inducing an in‐plane shape anisotropy of the nanosheets. Here, the synthesis of anisotropic MoS2 nanosheets is proposed as a prototypical example in this respect starting from a highly conformal chemical vapor deposition on prepatterend substrates and aiming at the more general purpose of tailoring anisotropy of 2D nanosheets by design. This is envisioned to be a suitable configuration for strain engineering as far as strain can be spatially redistributed in morphologically different regions. With a similar approach, both the optical and electronic properties of the 2D transition‐metal dichalcogenides can be tailored over macroscopic sample areas in a self‐organized fashion, thus paving the way for new applications in the field of optical metasurfaces, light harvesting, and catalysis.  相似文献   

19.
Double halide perovskites are a class of promising semiconductors applied in photocatalysis, photovoltaic devices, and emitters to replace lead halide perovskites, owing to their nontoxicity and chemical stability. However, most double perovskites always exhibit low photoluminescence quantum efficiency (PLQE) due to the indirect bandgap structure or parity‐forbidden transition problem, limiting their further applications. Herein, the self‐trapped excitons emission of Cs2NaInCl6 by Sb‐doping, showing a blue emission with high PLQE of 84%, is improved. Further, Sb/Mn codoped Cs2NaInCl6 nanocrystals are successfully synthesized by the hot‐injection method, showing a tunable dual‐emission covering the white‐light spectrum. The studies of PL properties and dynamics reveal that an energy transfer process can occur between the self‐trapped excitons and dopants (Mn2+). The work provides a new perspective to design novel lead‐free double perovskites for realizing a unique white‐light emission.  相似文献   

20.
Integration of semiconductors with noble metals to form heteronanostructures can give rise to many interesting plasmonic and electronic properties. A number of such heteronanostructures have been demonstrated comprising noble metals and n‐type semiconductors, such as TiO2, ZnO, SnO2, Fe3O4, and CuO. In contrast, reports on heteronanostructures made of noble metals and p‐type semiconductors are scarce. Cu2O is an unintentional p‐type semiconductor with unique properties. Here, the uniform coating of Cu2O on two types of Au nanorods and systematic studies of the plasmonic properties of the resultant core–shell heteronanostructures are reported. One type of Au nanorods is prepared by seed‐mediated growth, and the other is obtained by oxidation of the as‐prepared Au nanorods. The (Au nanorod)@Cu2O nanostructures produced from the as‐prepared nanorods exhibit two transverse plasmon peaks, whereas those derived from the oxidized nanorods display only one transverse plasmon peak. Through electrodynamic simulations the additional transverse plasmon peak is found to originate from a discontinuous gap formed at the side of the as‐prepared nanorods. The existence of the gap is verified and its formation mechanism is unraveled with additional experiments. The results will be useful for designing metal–semiconductor heteronanostructures with desired plasmonic properties and therefore also for exploring plasmon‐enhanced applications in photocatalysis, solar‐energy harvesting, and biotechnologies.  相似文献   

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