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Eliminating Overerase Behavior by Designing Energy Band in High‐Speed Charge‐Trap Memory Based on WSe2 下载免费PDF全文
Chunsen Liu Xiao Yan Jianlu Wang Shijin Ding Peng Zhou David Wei Zhang 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(17)
Atomic crystal charge trap memory, as a new concept of nonvolatile memory, possesses an atomic level flatness interface, which makes them promising candidates for replacing conventional FLASH memory in the future. Here, a 2D material WSe2 and a 3D Al2O3/HfO2/Al2O3 charge‐trap stack are combined to form a charge‐trap memory device with a separation of control gate and memory stack. In this device, the charges are erased/written by built‐in electric field, which significantly enhances the write speed to 1 µs. More importantly, owing to the elaborate design of the energy band structure, the memory only captures electrons with a large electron memory window over 20 V and trap selectivity about 13, both of them are the state‐of‐the‐art values ever reported in FLASH memory based on 2D materials. Therefore, it is demonstrated that high‐performance charge trap memory based on WSe2 without the fatal overerase issue in conventional FLASH memory can be realized to practical application. 相似文献
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Xiang Hou Heng Zhang Chunsen Liu Shijin Ding Wenzhong Bao David Wei Zhang Peng Zhou 《Small (Weinheim an der Bergstrasse, Germany)》2018,14(20)
Recently, layered ultrathin 2D semiconductors, such as MoS2 and WSe2 are widely studied in nonvolatile memories because of their excellent electronic properties. Additionally, discrete 0D metallic nanocrystals and quantum dots (QDs) are considered to be outstanding charge‐trap materials. Here, a charge‐trap memory device based on a hybrid 0D CdSe QD–2D WSe2 structure is demonstrated. Specifically, ultrathin WSe2 is employed as the channel of the memory, and the QDs serve as the charge‐trap layer. This device shows a large memory window exceeding 18 V, a high erase/program current ratio (reaching up to 104), four‐level data storage ability, stable retention property, and high endurance of more than 400 cycles. Moreover, comparative experiments are carried out to prove that the charges are trapped by the QDs embedded in the Al2O3. The combination of 2D semiconductors with 0D QDs opens up a novelty field of charge‐trap memory devices. 相似文献
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A High‐Performance WSe2/h‐BN Photodetector using a Triphenylphosphine (PPh3)‐Based n‐Doping Technique 下载免费PDF全文
Seo‐Hyeon Jo Dong‐Ho Kang Jaewoo Shim Jaeho Jeon Min Hwan Jeon Gwangwe Yoo Jinok Kim Jaehyeong Lee Geun Young Yeom Sungjoo Lee Hyun‐Yong Yu Changhwan Choi Jin‐Hong Park 《Advanced materials (Deerfield Beach, Fla.)》2016,28(24):4824-4831
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Monolayer Crystals: Ultrafast Self‐Limited Growth of Strictly Monolayer WSe2 Crystals (Small 41/2016) 下载免费PDF全文
Jinxin Liu Mengqi Zeng Lingxiang Wang Yongting Chen Zhuo Xing Tao Zhang Zheng Liu Junlai Zuo Fan Nan Rafael G. Mendes Shengli Chen Feng Ren Ququan Wang Mark H. Rümmeli Lei Fu 《Small (Weinheim an der Bergstrasse, Germany)》2016,12(41):5780-5780
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Nengjie Huo Juehan Yang Le Huang Zhongming Wei Shu‐Shen Li Su‐Huai Wei Jingbo Li 《Small (Weinheim an der Bergstrasse, Germany)》2015,11(40):5430-5438
Van der Waals (vdW) p–n heterojunctions consisting of various 2D layer compounds are fascinating new artificial materials that can possess novel physics and functionalities enabling the next‐generation of electronics and optoelectronics devices. Here, it is reported that the WSe2/WS2 p–n heterojunctions perform novel electrical transport properties such as distinct rectifying, ambipolar, and hysteresis characteristics. Intriguingly, the novel tunable polarity transition along a route of n‐“anti‐bipolar”–p‐ambipolar is observed in the WSe2/WS2 heterojunctions owing to the successive work of conducting channels of junctions, p‐WSe2 and n‐WS2 on the electrical transport of the whole systems. The type‐II band alignment obtained from first principle calculations and built‐in potential in this vdW heterojunction can also facilitate the efficient electron–hole separation, thus enabling the significant photovoltaic effect and a much enhanced self‐driven photoswitching response in this system. 相似文献
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Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism 下载免费PDF全文
Jaewoo Shim Hyo Seok Kim Yoon Su Shim Dong‐Ho Kang Hyung‐Youl Park Jaehyeong Lee Jaeho Jeon Seong Jun Jung Young Jae Song Woo‐Shik Jung Jaeho Lee Seongjun Park Jeehwan Kim Sungjoo Lee Yong‐Hoon Kim Jin‐Hong Park 《Advanced materials (Deerfield Beach, Fla.)》2016,28(26):5293-5299
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Memory Devices: Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory (Adv. Mater. 48/2016) 下载免费PDF全文
Sen Liu Nianduan Lu Xiaolong Zhao Hui Xu Writam Banerjee Hangbing Lv Shibing Long Qingjiang Li Qi Liu Ming Liu 《Advanced materials (Deerfield Beach, Fla.)》2016,28(48):10809-10809
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Wenjie Deng Congya You Xiaoqing Chen Yi Wang Yufo Li Beibei Feng Ke Shi Yongfeng Chen Ling Sun Yongzhe Zhang 《Small (Weinheim an der Bergstrasse, Germany)》2019,15(30)
Self‐assembled structures of 2D materials with novel physical and chemical properties, such as the good electrical and optoelectrical performance in nanoscrolls, have attracted a lot of attention. However, high photoresponse speed as well as high responsivity cannot be achieved simultaneously in the nanoscrolls. Here, a photodiode consisting of single MoS2 nanoscrolls and a p‐type WSe2 is demonstrated and shows excellent photovoltaic characteristics with a large open‐circuit voltage of 0.18 V and high current intensity. Benefiting from the heterostructure, the dark current is suppressed resulting in an increased ratio of photocurrent to dark current (two orders of magnitude higher than the single MoS2 nanoscroll device). Furthermore, it yields high responsivity of 0.3 A W?1 (corresponding high external quantum efficiency of ≈75%) and fast response time of 5 ms, simultaneously. The response speed is increased by three orders of magnitude over the single MoS2 nanoscroll device. In addition, broadband photoresponse up to near‐infrared could be achieved. This atomically thin WSe2/MoS2 nanoscroll integration not only overcomes the disadvantage of MoS2 nanoscrolls, but also demonstrates a single nanoscroll‐based heterostructure with high performance, promising its potential in the future optoelectronic applications. 相似文献
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Sensors: A Droplet‐Based High‐Throughput SERS Platform on a Droplet‐Guiding‐Track‐Engraved Superhydrophobic Substrate (Small 7/2017) 下载免费PDF全文
Sera Shin Jaehong Lee Sanggeun Lee Hyunchul Kim Jungmok Seo Dayeong Kim Juree Hong Soonil Lee Taeyoon Lee 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(7)
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Zhenyu Yang Hao Hong Fang Liu Yuan Liu Meng Su Hao Huang Kaihui Liu Xuelei Liang Woo Jong Yu Quoc An Vu Xingqiang Liu Lei Liao 《Small (Weinheim an der Bergstrasse, Germany)》2019,15(3)
Photoinduced memory devices with fast program/erase operations are crucial for modern communication technology, especially for high‐throughput data storage and transfer. Although some photoinduced memories based on 2D materials have already demonstrated desirable performance, the program/erase speed is still limited to hundreds of micro‐seconds. A high‐speed photoinduced memory based on MoS2/single‐walled carbon nanotubes (SWCNTs) network mixed‐dimensional van der Waals heterostructure is demonstrated here. An intrinsic ultrafast charge transfer occurs at the heterostructure interface between MoS2 and SWCNTs (below 50 fs), therefore enabling a record program/erase speed of ≈32/0.4 ms, which is faster than that of the previous reports. Furthermore, benefiting from the unique device structure and material properties, while achieving high‐speed program/erase operation, the device can simultaneously obtain high program/erase ratio (≈106), appropriate storage time (≈103 s), record‐breaking detectivity (≈1016 Jones) and multibit storage capacity with a simple program/erase operation. It even has a potential application as a flexible optoelectronic device. Therefore, the designed concept here opens an avenue for high‐throughput fast data communications. 相似文献
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Rujia Zou Zhenyu Zhang Qian Liu Junqing Hu Liwen Sang Meiyong Liao Wenjun Zhang 《Small (Weinheim an der Bergstrasse, Germany)》2014,10(9):1848-1856
Fabrication of a high‐temperature deep‐ultraviolet photodetector working in the solar‐blind spectrum range (190–280 nm) is a challenge due to the degradation in the dark current and photoresponse properties. Herein, β‐Ga2O3 multi‐layered nanobelts with (l00) facet‐oriented were synthesized, and were demonstrated for the first time to possess excellent mechanical, electrical properties and stability at a high temperature inside a TEM studies. As‐fabricated DUV solar‐blind photodetectors using (l00) facet‐oriented β‐Ga2O3 multi‐layered nanobelts demonstrated enhanced photodetective performances, that is, high sensitivity, high signal‐to‐noise ratio, high spectral selectivity, high speed, and high stability, importantly, at a temperature as high as 433 K, which are comparable to other reported semiconducting nanomaterial photodetectors. In particular, the characteristics of the photoresponsivity of the β‐Ga2O3 nanobelt devices include a high photoexcited current (>21 nA), an ultralow dark current (below the detection limit of 10?14 A), a fast time response (<0.3 s), a high Rλ (≈851 A/W), and a high EQE (~4.2 × 103). The present fabricated facet‐oriented β‐Ga2O3 multi‐layered nanobelt based devices will find practical applications in photodetectors or optical switches for high‐temperature environment. 相似文献