Conductivity of Ga<Subscript>2</Subscript>O<Subscript>3</Subscript>–GaAs Heterojunctions

The effect of annealing in argon at temperatures of T_an = 700–900°C on the I–V characteristics of metal–Ga₂O₃–GaAs structures is investigated. Samples are prepared by the thermal deposition of Ga₂O₃ powder onto GaAs wafers with a donor concentration of N _d = 2 × 10¹⁶ cm^–3. To measure theI–V characteristics, V/Ni metal electrodes are deposited: the upper electrode (gate) is formed on the Ga₂O₃ film through masks with an area of S _k = 1.04 × 10^–2 cm² and the lower electrode in the form of a continuous metallic film is deposited onto GaAs. After annealing in argon at T_an ≥ 700°C, the Ga₂O₃-n-GaAs structures acquire the properties of isotype n-heterojunctions. It is demonstrated that the conductivity of the structures at positive gate potentials is determined by the thermionic emission from GaAs to Ga₂O₃. Under negative biases, current growth with an increase in the voltage and temperature is caused by field-assisted thermal emission in gallium arsenide. In the range of high electric fields, electron phonon-assisted tunneling through the top of the potential barrier is dominant. High-temperature annealing does not change the electron density in the oxide film, but affects the energy density of surface states at the GaAs–Ga₂O₃ interface.     

Photoluminescence in Spray Pyrolysis Deposited β-In<Subscript>2</Subscript>S<Subscript>3</Subscript> Thin Films

Spray pyrolysis deposited In₂S₃ thin films exhibit two prominent photoluminescent emissions. One of the emissions is green in color and centered at around ～ 540 nm and the other is centered at around ～ 690 nm and is red in color. The intensity of the green emission decreases when the films are subjected to annealing in air or vacuum. The intensity of red emission increases when films are air annealed and decreases when vacuum annealed. Vacuum annealing leads to an increase in work function whereas air annealing leads to a decrease in work function for this thin film system relative to the as deposited films indicating changes in space charge regions. Surface photovoltage analysis using a Kelvin probe leads to the conclusion that inversion of band bending occurs as a result of annealing. Correlating surface contact potential measurements using a Kelvin probe, x-ray photoelectron spectroscopy and photoluminescence, we conclude that the surface passivation plays a critical role in controlling the photoluminescence from the spray pyrolysis deposited for In₂S₃ thin films.     

Preparation and Ferroelectric Properties of Ho<Superscript>3+</Superscript>/Mo<Superscript>6+</Superscript> Cosubstituted Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> Thin Films by Sol–Gel Method

We have prepared Ho³⁺/Mo⁶⁺ cosubstituted bismuth titanate [(Bi_3.6Ho_0.4)_3.99- Ti_2.985Mo_0.015O₁₂, BHTM] thin films on Pt/Ti/SiO₂/Si substrates using the sol–gel method. The crystal structure and morphology of the BHTM films were characterized. The BHTM samples show a single phase of Bi-layered Aurivillius structure and a dense microstructure. The dielectric constant and dielectric loss of the BHTM films were about 359 and 0.043, respectively, at a frequency of 1 MHz. The films exhibit 2P _r of 57.7 μC/cm² and 2E _c of 290.0 kV/cm at an applied field of 470 kV/cm, and have fatigue-free characteristics. They also showed good insulating behavior according to leakage current testing.     

Structure and Properties of Nanostructured YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7–δ</Subscript>, BiFeO<Subscript>3</Subscript>, and Fe<Subscript>3</Subscript>O<Subscript>4</Subscript>

The development of new nanostructured materials based on YBa₂Cu₃O_7–δ, BiFeO₃, and Fe₃O₄ compounds is considered. The structure, morphology, and properties of these materials are studied. The possibilities of fabricating YBa₂Cu₃O_7–δ ceramics with given densities from nanopowders in a single stage by an energy efficient method and growing superconducting films of the same composition on a silicon substrate (on a SiO₂ layer) are demonstrated. The technique for fabricating BiFeO₃ nanopowder, making it possible to obtain nanostructured ceramics without additional accompanied phases commonly forming during BiFeO₃ synthesis is developed. Two methods of the single-stage synthesis of Fe₃O₄ nanopowder are presented: burning of nitrate-organic precursors and the electrochemical three-electrode method in which one of the electrodes, i.e., an anode containing scrap iron and slurry, is used as an expendable material.     

Free-Standing β-Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> Thin Diaphragms

Free-standing, very thin, single-crystal β-gallium oxide (β-Ga₂O₃) diaphragms have been constructed and their dynamical mechanical properties characterized by noncontact, noninvasive optical measurements harnessing the multimode nanomechanical resonances of these suspended nanostructures. We synthesized single-crystal β-Ga₂O₃ using low-pressure chemical vapor deposition (LPCVD) on a 3C-SiC epilayer grown on Si substrate at temperature of 950°C for 1.5 h. The synthesized single-crystal nanoflakes had widths of ～ 2 μm to 30 μm and thicknesses of ～ 20 nm to 140 nm, from which we fabricated free-standing circular drumhead β-Ga₂O₃ diaphragms with thicknesses of ～ 23 nm to 73 nm and diameters of ～ 3.2 μm and ～ 5.2 μm using a dry stamp-transfer technique. Based on measurements of multiple flexural-mode mechanical resonances using ultrasensitive laser interferometric detection and performing thermal annealing at 250°C for 1.5 h, we quantified the effects of annealing and adsorption of atmospheric gas molecules on the resonant characteristics of the diaphragms. Furthermore, we studied the effects of structural nonidealities on these free-standing β-Ga₂O₃ nanoscale diaphragms. We present extensive characterization of the mechanical and optical properties of free-standing β-Ga₂O₃ diaphragms, paving the way for realization of resonant transducers using such nanomechanical structures for use in applications including gas sensing and ultraviolet radiation detection.     

Enhanced Photocatalytic Activity of Two-Pot-Synthesized BiFeO<Subscript>3</Subscript>–ZnFe<Subscript>2</Subscript>O<Subscript>4</Subscript> Heterojunction Nanocomposite

BiFeO₃–ZnFe₂O₄ heterojunction nanocomposites have been produced by a chemical synthesis method using one- and two-pot approaches. X-ray diffraction patterns of as-calcined samples indicated formation of pure zinc ferrite (ZnFe₂O₄) and bismuth ferrite (BiFeO₃) phases, each retaining its crystal structure. Diffuse reflectance spectrometry was applied to calculate the optical bandgap of the photocatalysts, revealing values in the range from 2.03 eV to 2.17 eV, respectively. The maximum photodegradation of methylene blue of about 97% was achieved using two-pot-synthesized photocatalyst after 120 min of visible-light irradiation due to the higher probability of charge separation of photogenerated electron–hole pairs in the heterojunction structure. Photoluminescence spectra showed lower emission intensity of two-pot-synthesized photocatalyst, due to its lower recombination rate originating from greater charge separation.     

Good Thermal Stability,High Permittivity,Low Dielectric Loss and Chemical Compatibility with Silver Electrodes of Low-Fired BaTiO<Subscript>3</Subscript>–Bi(Cu<Subscript>0.75</Subscript>W<Subscript>0.25</Subscript>)O<Subscript>3</Subscript> Ceramics

(1 ? x)BaTiO₃–xBi(Cu_0.75W_0.25)O₃ [(1 ? x)BT–xBCW, 0 ≤ x ≤ 0.04] perovskite solid solutions ceramics of an X8R-type multilayer ceramic capacitor with a low sintering temperature (900°C) were synthesized by a conventional solid state reaction technique. Raman spectra and x-ray diffraction analysis demonstrated that a systematically structural evolution from a tetragonal phase to a pseudo-cubic phase appeared near 0.03 < x < 0.04. X-ray photoelectron analysis confirmed the existence of Cu⁺/Cu²⁺ mixed-valent structure in 0.96BT–0.04BCW ceramics. 0.96BT–0.04BCW ceramics sintered at 900°C showed excellent temperature stability of permittivity (Δε/ε _25°C ≤ ±15%) and retained good dielectric properties (relative permittivity ～1450 and dielectric loss ≤2%) over a wide temperature range from 25°C to 150°C at 1 MHz. Especially, 0.96BT–0.04BCW dielectrics have good compatibility with silver powders. Dielectric properties and electrode compatibility suggest that the developed materials can be used in low temperature co-fired multilayer capacitor applications.     

Catalyst-Free Direct Vapor-Phase Growth of Hexagonal ZnO Nanowires on <Emphasis>α</Emphasis>-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>

The evolution of ZnO nanowires has been studied under supersaturation of Zn metal species with and without a ZnO thin-film buffer layer on α-Al₂O₃ deposited by the pulsed laser ablation technique. The nanowires had diameters in the range of 30 nm to 50 nm and lengths in the range of 5 μm to 10 μm with clear hexagonal shape and [000[`1]] [000\bar{1}] , [10[`1]1] [10\bar{1}1] , and [10[`1]0] [10\bar{1}0] facets. X-ray diffraction (XRD) measurements indicated crystalline properties for the ZnO nanostructures grown on pulsed laser deposition (PLD) ZnO nucleation layers. The optical properties were analyzed by photoluminescence (PL) and cathodoluminescence (CL) measurements. The ZnO nanowires were found to emit strong ultraviolet (UV) light at 386 nm and weak green emission as observed by PL measurements. The stoichiometry of Zn and O was found to be close to 1 by x-ray photoelectron spectroscopy (XPS) measurements. The process-dependent growth properties of ZnO nanostructures can be harnessed for future development of nanoelectronic components including optically pumped lasers, optical modulators, detectors, electron emitters, and gas sensors.     

Deposition of heteroepitaxial layers of topological insulator Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> in the trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al<Subscript>2</Subscript>O<Subscript>3</Subscript> and (100) GaAs substrates

Thin solid layers that are formed upon heating of the gaseous trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al₂O₃ and singular and vicinal (100) GaAs surfaces are studied. The conditions for deposition of metal Bi and phases of Bi₄Se₃, BiSe, and topological insulator Bi₂Se₃ using the MOCVD method are determined. Pure metastable phase BiSe is obtained for the first time. Bi₂Se₃ films with a thickness of no less than 200 nm, a relatively low volume concentration of 3 ×10¹⁸ cm^–3, and a high mobility of carriers at 300 K (1000 cm² V^–1 s^–1) are fabricated.     

Preparation of Bi<Subscript>0.85</Subscript>Nd<Subscript>0.15</Subscript>FeO<Subscript>3</Subscript> Nanotube Arrays by a Sol–Gel Template Method

Bi_0.85Nd_0.15FeO₃ (BNF) nanotube arrays were prepared by a sol–gel template method. The microstructure and phase were observed by scanning electron microscopy and transmission electron microscopy. Highly ordered nanotube arrays with BNF nanotubes of 200 nm diameter, 60 μm length, and 20 nm wall thickness were obtained. The BNF nanotube array capacitor showed ferroelectricity with a remanent polarization (2P _r) of 68.7 μC/cm² and a coercive electric field (2E _c) of 141.9 kV/cm at frequency of 1000 Hz. The leakage current behavior of the BNF nanotube array was dominated by an ohmic conduction mechanism at E < 30 kV/cm and a space-charge-limited current mechanism at E = 30 kV/cm to 200 kV/cm.     

Study of dielectric processes in (As<Subscript>2</Subscript>Se<Subscript>3</Subscript>)<Subscript>1 − <Emphasis Type=Italic>x</Emphasis></Subscript>Bi<Subscript><Emphasis Type=Italic>x</Emphasis></Subscript> amorphous films

A comparative analysis of dielectric polarization processes in undoped and Bi-doped layers of modified As₂Se₃ has been performed. It is established that both the similarity and difference in polarization phenomena are due to specific features of the internal structure of studied materials. The mechanism of the observed effects is discussed.     

Microstructure and Thermoelectric Transport Properties of Type I Clathrates Ba<Subscript>8</Subscript>Sb<Subscript>2</Subscript>Ga<Subscript>14</Subscript>Ge<Subscript>30</Subscript> Prepared by Ultrarapid Solidification Process

Type I clathrate bulk materials Ba₈Sb₂Ga₁₄Ge₃₀ were prepared by the melt spinning (MS) technique combined with the spark plasma sintering (SPS) method. The microstructure and thermoelectric transport properties of the compounds were investigated. The results show that the grain size decreases greatly compared with materials obtained by the traditional melting and SPS method. The electrical conductivity increases greatly and the lattice thermal conductivity decreases significantly with increasing roller linear speed. The maximum thermoelectric dimensionless figure of merit ZT of 1.05 is obtained at 950 K for the sample prepared by melt spinning with a roller linear speed of 40 m/s.     

The boson peak in Raman spectra of As<Subscript>x</Subscript>S<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript> glasses

The Raman spectra of As_xS_1?x glasses with x < 40 at % (Z < 2.4) have been studied in a wide temperature range (20–300 K). A well resolved boson peak is observed in the low-frequency portion of the spectrum, not withstanding the appearance of floppy modes in the glasses under study. It is shown that the boson peak is characterized by two parameters: intensity and the peak position. A comparison of the intensity variation for the boson peaks indicates that the degree of disorder increases as x decreases. This effect is caused by floppy modes in the glass network and by sulfur phase separation. Studies of reduced boson peaks in the Raman spectra of As_xS_1?x glasses confirms the theoretical assumption that the shape of the peaks is independent of composition and temperature.     

On the band gap of Cu<Subscript>2</Subscript>ZnSn(S<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>4</Subscript> alloys

The transmittance spectra of single-crystal Cu₂ZnSnS₄ and Cu₂ZnSnSe₄ compounds and Cu₂ZnSn(S _x Se_1–x )₄ alloys grown by chemical vapor-transport reactions are studied in the region of the fundamental absorption edge. From the experimental spectra, the band gap of the compounds and their alloys is determined. The dependences of the band gap on the composition parameter x of the alloy are constructed. It is established that the band gap nonlinearly varies with x and can be described as a quadratic dependence.     

Analysis of the magnetic properties of (La<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>0.93</Subscript>MnO<Subscript>3</Subscript> manganites at high temperatures

For the first time, the Faraday method is used to measure the temperature dependence of paramagnetic susceptibility χ(T) of (La_{1 ? x} Sr _x )_0.93MnO₃ (x = 0.2, 0.25, or 0.3) manganites in the temperature interval 60–850°C. It is demonstrated that the dependences have two kinks and three linear sections. The kink of curve χ^?1(T) is related to polymorphic transformations (Q′ → Q* and Q* → R) that take place in the crystal lattices of the samples. The main magnetic characteristics of the samples are determined with the least-squares processing of curve χ^?1. Is is demonstrated that dependence χ^?1(T) obeys the Curie-Weiss law. The energy state of the magnetoactive manganese atom in the Q′-and Q*-phase samples is close to the energy state of a free Mn²⁺ ion. In the R phase, this state is close to the state of a free Mn³⁺ ion.     

A ferroelectric field effect transistor based on a Pb(Zr<Subscript>x</Subscript>Ti<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>)O<Subscript>3</Subscript>/SnO<Subscript>2</Subscript> heterostructure

The possibility of fabricating a ferroelectric FET based on a Pb(Zr_xTi_1?x)O₃/SnO₂ (PZT/SnO₂) heterostructure is investigated. Sb-doped epitaxial SnO₂/Al₂O₃ thin film deposited by YAG laser ablation from a metal target is used as the FET channel. The highest obtained electron mobility in the channel is 25 cm²/(V s) at an electron density of 8 × 10¹⁹ cm^?3. The possibility of growing PZT film directly on SnO₂ film using two different techniques, laser ablation and magnetron sputtering, is demonstrated. Both methods have been used in the fabrication of Au/PZT/SnO₂ capacitor heterostructures, whose top Au electrode is 250×250 μm² in size. These cells demonstrate a capacitance of 1000 pF at a 10-V bias and remnant polarization up to 16 μC/cm². A Au/PZT/SnO₂/Al₂O₃ transistor structure with 94% modulation of the channel current is fabricated. The difference in the channel current under the effect of positive and negative remnant polarization of the undergate ferroelectric is 37%.     

Synthesis and Transport Properties of In<Subscript>4</Subscript>(Se<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>3</Subscript>

Polycrystalline samples of In₄(Se_1−x Te _x )₃ were synthesized by using a melting–quenching–annealing process. The thermoelectric performance of the samples was evaluated by measuring the transport properties from 290 K to 650 K after sintering using the spark plasma sintering (SPS) technique. The results indicate that Te substitution can effectively reduce the thermal conductivity while maintaining good electrical transport properties. In₄Te₃ shows the lowest thermal conductivity of all compositions tested.     

The modification of BaCe<Subscript>0.5</Subscript>Zr<Subscript>0.3</Subscript>Y<Subscript>0.2</Subscript>O<Subscript>3–δ</Subscript> with copper oxide: Effect on the structural and transport properties

The effect of the content of CuO additive on the sinterability, phase composition, microstructure, and electrical properties of BaCe_0.5Zr_0.3Y_0.2O_3–δ proton-conducting material is studied. Ceramic samples were produced by the citrate–nitrate synthesis method with the addition of 0, 0.25, 0.5, and 1% CuO. It is shown that the relative density of the samples containing 0.5 and 1% CuO is higher than 94% at a sintering temperature of 1450°C, whereas the relative density of the material is no higher than 85% at a lower content of the sintering additive. From the data of X-ray diffraction analysis and scanning electron microscopy, it is established that the introduction of a small CuO content (0.25%) is inadequate for single-phase and high-dense ceramics to be formed. The conductivity and scanning electron microscopy data show that the sample with BaCe_0.5Zr_0.3Y_0.2O_3–δ + 0.5% CuO composition possesses high total and ionic conductivities as well as a high degree of microstructural stability after hydrogen reduction of the ceramics. The citrate–nitrate method modified by the introduction of a small CuO content can be recommended for the production of single-phase, gas-tight, and high-conductivity electrolytes based on both BaCeO₃ and BaZrO₃.     

Heat Capacity Study on Anharmonicity in Ae<Subscript>8</Subscript>Ga<Subscript>16</Subscript>Ge<Subscript>30</Subscript> (Ae = Sr and Ba)

The heat capacity of single-crystalline samples of Sr₈Ga₁₆Ge₃₀ (SGG) and Ba₈Ga₁₆Ge₃₀ (BGG) clathrates was measured to investigate the anharmonicity of the encapsulated atoms. At low temperatures, BGG can be well described by a standard Debye model, and the C _p/T ³ versus T plot can be fitted with two Einstein temperatures: θ _E1 = 42 K and θ _E2 = 74 K. On the other hand, SGG shows deviation from the Debye model. Moreover, neither the Einstein model nor the soft potential model (SPM) alone can fit the peak in the C _p/T ³ versus T plot, and the peak should be fitted by employing both models. Our results indicate that the effective electron mass is enhanced by the anharmonic phonons.