溅射功率对CdZnTe薄膜成分和结构的影响

采用Cd0.9Zn0.1Te晶体作为溅射靶在玻璃衬底上利用磁控溅射法制备出CdZnTe薄膜,研究了溅射功率对CdZnTe薄膜的成分、结构特性的影响。制备的CdZnTe薄膜是具有闪锌矿结构的多晶薄膜,沿（111）择优取向。随着溅射功率的增大,薄膜沉积速率增大,薄膜结晶质量提高。采用晶体靶Cd0.9Zn0.1Te溅射CdZnTe薄膜时,无论是在何种功率下CdZnTe薄膜中的Cd原子成分均高于Te原子成分,Cd原子表现为择优溅射原子。     

溅射功率对TaN薄膜电阻电性能的影响

本文利用直流反应磁控溅射技术,通过调节溅射功率于200℃、3％的氮分压条件在Al2O3基片上沉积了一系列TaN薄膜,并使用光刻工艺制备出相应的TaN薄膜电阻,研究了溅射功率对TaN薄膜电阻率、电阻温度系数（TCR）和功率容量的影响。实验结果表明：当溅射功率从200W增大到1000W,TaN薄膜电阻率逐渐减小,TCR绝对值从几百ppm／℃降为几十ppm／℃,功率容量呈现逐渐增大趋势。     

溅射功率对AZO／Cu／AZO多层薄膜结构与光电性能的影响

在玻璃衬底上利用磁控溅射法制备AZO／Cu／AZO多层薄膜,研究了溅射功率对AZO薄膜的微观结构和光电性能的影响。采用X射线衍射（XRD）仪、扫描电子显微镜（SEM）、紫外可见光谱仪（UVVis）等方法,对AZO薄膜的形貌结构、光电学性能进行了测试。结果表明：不同溅射功率下沉积的AZO薄膜均呈C轴择优取向,溅射功率对AZO／cu／AZO多层薄膜结构与光电性能有一定的影响。在溅射功率为120W、衬底温度为2500C、溅射气压为0．5Pa时薄膜的光透过率为75％,最低电阻率为2．2×10-4Ω·cm、结晶质量、表面形貌等得到明显改善。     

溅射功率对Ca2Si薄膜性质的影响

采用射频磁控溅射技术在Si（100）衬底上沉积了si-ca-si薄膜，并在高真空条件下对样品进行退火处理，直接生成立方相Ca2Si薄膜。研究了不同溅射功率对薄膜的晶体结构、表面（断面）形貌的影响，并对其光学性质进行了测试分析。结果表明：Ca2Si薄膜为立方结构且具有沿（111）向择优生长的特性，当溅射功率为120W时，Ca2Si薄膜变的均匀、致密，在400-800nm波长范围内，溅射功率对折射率n和吸收系数k的影响较小。     

溅射功率对镓掺杂氧化锌薄膜光电性能的影响

本文利用射频磁控溅射的方法首次制备了厚度小于200 nm的低电阻率高透过率的镓掺杂ZnO(GZO)薄膜.研究了溅射功率的改变对GZO薄膜光电性能的影响.利用扫描电镜对薄膜的微观结构进行了观察,利用四探针测试仪、紫外-可见分光光度计对GZO薄膜的光电性能进行了测试.实验结果表明:薄膜电阻率随溅射功率增大而迅速下降,从46...     

溅射功率对铒薄膜微观结构的影响

采用直流磁控溅射方法制备出铒(Er)薄膜,利用X射线衍射仪(XRD)和扫描电子显微镜(SEM)研究了溅射功率对Er薄膜微观结构的影响。结果表明:在溅射功率20W～60W的范围内,Er薄膜均为hcp结构,且呈现明显的(110)晶面择优取向的微观织构。Er薄膜生长呈现柱状晶模式,随着溅射功率的增加,柱状晶组织相应长大,薄膜结构更加致密,表面更为平整,其平均晶粒尺寸7.7nm～9.6nm,表面粗糙度最低2.1nm。磁控溅射方法制备的Er薄膜与电子束蒸发等方法制备的Er薄膜相比具有不同的微观结构特征。     

溅射功率对LiCoO2薄膜结构及性能的影响研究

采用射频磁控溅射技术,在不锈钢衬底上沉积制备了(003)取向的LiCoO₂薄膜。通过X射线衍射仪、扫描电镜、拉曼及电化学测试探究了溅射功率对LiCoO₂薄膜结构及电化学性能的影响。结果表明在80-160 W功率范围内,适当增加功率有助于Co与O的键合,提高薄膜的结晶度。功率为120 W时,首次放电比容量为40.9μAh cm^-2μm^-1,循环100圈后容量保持率为61.2%;但当功率提高到160 W时,由于过快的沉积速率难以与粒子在衬底表面的扩散速率相匹配反而会造成LiCoO₂结晶度下降,晶格产生畸变,阻碍了Li+在材料内部的扩散,循环100圈后容量保持率只有54.2%。     

溅射功率对ZnO:Al薄膜光电性能的影响

采用射频磁控溅射工艺,以Al掺杂ZnO(ZAO)陶瓷靶为靶材在石英玻璃基片上制备出具有优良光电性能的ZAO透明导电薄膜,研究了溅射功率对薄膜光电性能的影响。在不同溅射功率条件下制备的ZAO薄膜具有很好的c轴择优取向。较大功率溅射有利于薄膜晶粒尺寸的增大、电阻率降低。ZAO薄膜在可见光区的透过率平均值高达90%以上,受溅射功率影响不大。在340nm-420nm波长附近ZAO薄膜透过率急剧下降,呈现明显的紫外吸收边;高的溅射功率提高了ZAO薄膜的光学带隙宽度。     

溅射功率对磁控溅射法制备MgF2薄膜组织和性能的影响

为了减少磁控溅射法沉积MgF₂薄膜的F贫乏缺陷, 在工作气体Ar₂中加入SF₆作为反应气体, 在石英玻璃衬底上用射频磁控溅射法制备了MgF₂薄膜, 研究了溅射功率对MgF₂薄膜化学成分、微观结构和光学性能的影响。结果表明, 随着溅射功率从115 W增加到220 W, F: Mg的原子比不断增加, 185 W时达到2.02, 最接近理想化学计量比2 : 1;薄膜的结晶度先提高后降低, 最后转变为非晶态; MgF₂薄膜的颗粒尺寸先是有所增加, 轮廓也变得更加清晰, 最后又变得模糊。MgF₂薄膜的折射率先减小后增大, 在185 W时获得最低值, 550 nm波长的折射率1.384非常接近MgF₂块体晶体;镀膜玻璃在300~1100 nm范围内的透光率(以下简称薄膜透光率)先增大后减小, 185 W时达到94.99%, 比玻璃基底的透光率高出1.79%。     

溅射功率和靶基距对ZAO薄膜性能影响

采用直流反应磁控溅射技术,制备获得ZnO:Al( ZAO)薄膜,研究溅射功率、靶基距关键制备工艺参数对ZAO薄膜的组织结构、光、电性能的影响,并获得了最佳的溅射功率、靶基距制备参数,利用该参数制备ZAO薄膜,能够获得在可见光范围内的平均透射率》80％,最低电阻率为4.5×10-4Ω·cm的ZAO薄膜,其光电性能均满足应...     

Reactive ion bombardment of tantalum thin film resistors

Films 400–1800 Å in thickness, composed of a mixture of tantalum and tantalum oxide, have been bombarded with 20–110 keV argon, oxygen and nitrogen ions. For all three bombarding ions the dependence of resistance on dose may be divided into low, medium and high dose regions. At low doses the resistance drops, probably as a result of desorption of gases, whilst at high doses the resistance rises rapidly due to complete removal of the film by sputtering. At medium doses the chemical effects of reactive ion bombardment are seen. The oxygen-bombarded specimens show a gradual and continuous rise in resistance, probably as the free tantalum is converted to Ta₂O₅, whilst the nitrogen-bombarded specimens show peaks in resistance which appear to be associated with the formation of Ta₂N and TaN. The thermal coefficient of resistivity (TCR) was measured for two nitrogen-bombarded specimens and the dose dependence of the TCRs followed that of the resistance, showing a sharp minimum at fairly high doses and resulting in the achievement of the high resistivity of 5000 μω cm coupled with a TCR of less than ± 100 ppm/°C.     

溅射功率对PET基表面沉积纳米铜膜特性影响

室温条件下采用射频磁控溅射法在涤纶(PET)平纹机织物表面沉积纳米Cu薄膜,借助原子力显微镜(AFM)分析溅射功率的变化对铜膜表面形貌、粒径的影响;同时研究不同溅射功率条件下制备的沉积纳米铜织物透光性能、导电性能及界面结合性能。实验结果表明,随着溅射功率增加,纳米铜膜颗粒大小、表面粗糙度随之减小,铜膜的均匀性、致密性先提高后下降;经Cu镀层处理的涤纶平纹织物对紫外光和可见光透射率明显低于原样,溅射功率提高能使样品屏蔽紫外线和可见光效果变好,但功率提高到120W后,屏蔽效果增加不明显;铜膜方阻随溅射功率提高而减小,导电性能增强,而铜膜与基材的剥离强力先增加后减少。     

Effect of ion bombardment on the initial stages of thin film growth

The influence of ion bombardment on the initial stages of silver deposition onto amorphous substrates was investigated. Pronounced adatom-depleted zones arise around larger crystallites, and coalescence begins earlier in the deposition process. A defined crystal orientation appears from the beginning of the condensation. The results are explained using the assumption of enhanced surface mobilities of both adatoms and crystallites. The possibility of application of ion bombardment for surface decoration is qualitatively investigates and discussed.     

Influence of sputtering pressure on the structure and ionic conductivity of thin film amorphous electrolyte

Ionic conducting thin film amorphous electrolytes are promising candidates for microelectronics applications. This study presents an investigation into the structure and composition of lithium phosphorus oxynitride (LiPON) thin film electrolyte prepared using radio frequency (RF) sputtering on Li₃PO₄ target. The ionic conductivity of LiPON thin films has been dramatically improved by decreasing N₂ pressure. X-ray photoelectron spectra (XPS) were used to determine the structure and composition of LiPON thin films. It was found that increasing the N₂ pressure during the deposition process resulted in a greatly decreased formation of triply coordinated –N<(N_t) as compared to doubly coordinated –N=(N_d) in LiPON thin films. These results indicate that the N_t structural unit plays an important role in the improvement of ionic conductivity as compared to the N_d structural unit. It also shows that PO₂N₂ tetrahedra with two N_t structural units exist in LiPON thin films at low N₂ pressures. Consequently, the improved ionic conductivity of the LiPON thin film deposited at low pressure results from the existence of PO₂N₂ tetrahedra with two N_t structural units in LiPON thin film. PO₂N₂ tetrahedra with two N_t structural units provides higher cross-linking density of the glass network and lower electrostatic energy than with two N_d structural units.     

直流溅射工艺参数对Mo薄膜结构及电性能的影响

采用直流磁控溅射法在SLG衬底上沉积Mo薄膜,对不同溅射功率和溅射工作气压下沉积的薄膜进行X射线衍射、SEM(扫描电子显微镜)、电阻率测试,讨论了工艺参数对沉积Mo薄膜相结构、表面微观形貌、薄膜沉积速率和电学性能的影响。结果表明,随着溅射功率的增加,薄膜的结晶性能变好,沉积速率提高,在沉积功率范围内薄膜均匀致密,表面无空隙,电阻率较低;随着溅射工作气压增加,薄膜结晶性能变差,沉积速率先增加后降低,在沉积工作气压范围内,薄膜致密;随气压降低,电阻率急剧减小。因此,较高的溅射功率和较低的工作气压沉积的Mo薄膜更适合作CIGS薄膜太阳电池的BC层(背接触层)。     

射频溅射工艺参数对AZO薄膜结构和性能的影响

采用射频磁控溅射法制备了掺铝氧化锌(AZO)薄膜,研究了衬底温度及溅射工作压强对沉积薄膜的晶体结构、表面形貌及电学性能的影响。结果显示,随衬底温度增加,薄膜的结晶结构发生显著变化,而溅射工作气压增加主要影响沉积薄膜(103)面与(002)面的相对强度。薄膜的表面形貌受温度影响严重,而气压对形貌的影响相对较小。衬底温度增加,薄膜的电阻率急剧降低,迁移率和载流子浓度都显著增加,而工作气压增加则导致电阻率先减小后增大。     

Nanostructure formation of Cu/Si(100) thin film induced by ion beam bombardment

A simple method for fabricating self-organized Cu nano-dots on Si(100) substrate by low energy Ar⁺ ion beam bombardment of a Cu thin film at room temperature over a large area is demonstrated. The morphological evolution has been investigated using scanning electron microscopy and atomic force microscopy. It was found that nano-ripple patterns formed on a Cu grain surface on a 110 nm thick polycrystalline Cu thin film under normal ion incidence. Uniformly distributed Cu nano-dots were obtained by bombardment of 55 nm thick nano-crystalline Cu thin films. The formation mechanism of the Cu nanostructures was discussed with the aid of numerical simulations using a modified damped Kuramoto–Sivashinsky equation.