Effect of substrate metallization on interfacial reactions and reliability of Sn-Zn-Bi solder joints

The scope of this paper covers a comprehensive study of the lead-free Sn-Zn-Bi solder system, on Cu, electrolytic Ni/Au and electroless Ni(P)/Au surface finishes. This includes a study of the shear properties, intermetallic compounds at the substrate-ball interface and dissolution of the under bump metallization. The Sn-8Zn-3Bi (wt.%) solder/Cu system exhibited a low shear load with thick IMCs formation at the interface. The dissolution of the Cu layer in the Sn-Zn-3Bi solder is higher than that of the other two Ni metallizations. It was found that the formation of a thick Ni-Zn intermetallic compound (IMC) layer at the solder interface of the electrolytic Ni bond pad reduced the mechanical strength of the joints during high temperature long time liquid state annealing. The solder ball shear-load for the Ni(P) system during extended reflow increased with an increase of reflow time. No spalling was noticed at the interface of the Sn-Zn-3Bi solder/Ni(P) system. Sn-8Zn-3Bi solder with electroless Ni(P) metallization appeared as a good combination in soldering technology.     

Effect of reaction time on mechanical strength of the interface formed between the Sn-Zn(-Bi) solder and the Au/Ni/Cu bond pad

In this work, the shear strengths and the interfacial reactions of Sn-9Zn, Sn-8Zn-1Bi, and Sn-8Zn-3Bi (wt.%) solders with Au/Ni/Cu ball grid array (BGA) pad metallization were systematically investigated after extended reflows. Zn-containing Pb-free solder alloys were kept in molten condition (240°C) on the Au/electrolytic Ni/Cu bond pads for different time periods ranging from 1 min. to 60 min. to render the ultimate interfacial reaction and to observe the consecutive shear strength. After the shear test, fracture surfaces were investigated by scanning electron microscopy equipped with an energy dispersive x-ray spectrometer. Cross-sectional studies of the interfaces were also conducted to correlate with the fracture surfaces. The solder ball shear load for all the solders during extended reflow increased with the increase of reflow time up to a certain stage and then decreased. It was found that the formation of thick Ni-Zn intermetallic compound (IMC) layers at the solder interface of the Au/electrolytic Ni/Cu bond pad with Sn-Zn(-Bi) alloys deteriorated the mechanical strength of the joints. It was also noticed that the Ni-Zn IMC layer was larger in the Sn-Zn solder system than that in the other two Bi-containing solder systems.     

Sn-Ag基无铅钎料Nd:YAG激光重熔界面研究

通过Nd∶YAG激光重熔和热风二次重熔试验,得到了Sn3.5Ag和Sn3.0Ag0.5Cu无铅钎料球在Cu焊盘的钎料凸台.利用扫描电子显微镜分别分析了激光重熔和热风二次重熔后两种无铅钎料与铜焊盘界面反应及组织形貌,并对激光一次重熔无铅钎料凸台进行了剪切试验,观察了凸台的剪切断口.结果表明,在合适的激光功率和加热时间条件下能够获得成形良好的无铅钎料凸台,Sn3.5Ag和Sn3.0Ag0.5Cu两种无铅钎料与Cu焊盘所产生的界面化合物主要为Cu3Sn和Cu6Sn5,凸台界面反应组织形貌以及剪切承载力与激光功率和加热时间密切相关,而且激光重熔形成的界面化合物影响热风二次重熔界面的组织形貌.     

Effects of microstructural evolution and intermetallic layer growth on shear strength of ball-grid-array Sn-Cu solder joints

The shear strength of ball-grid-array (BGA) solder joints on Cu bond pads was studied for Sn-Cu solder containing 0, 1.5, and 2.5 wt.% Cu, focusing on the effect of the microstructural changes of the bulk solder and the growth of intermetallic (IMC) layers during soldering at 270°C and aging at 150°C. The Cu additions in Sn solder enhanced both the IMC layer growth and the solder/IMC interface roughness during soldering but had insignificant effects during aging. Rapid Cu dissolution from the pad during reflow soldering resulted in a fine dispersion of Cu₆Sn₅ particles throughout the bulk solder in as-soldered joints even for the case of pure Sn solder, giving rise to a precipitation hardening of the bulk solder. The increased strength of the bulk solder caused the fracture mode of as-soldered joints to shift from the bulk solder to the solder/IMC layer as the IMC layer grew over a critical thickness about 1.2 m for all solders. The bulk solder strength decreased rapidly as the fine Cu₆Sn₅ precipitates coarsened during aging. As a consequence, regardless of the IMC layer thickness and the Cu content of the solders, the shear strength of BGA solder joints degraded significantly after 1 day of aging at 150°C and the shear fracture of aged joints occurred in the bulk solder. This suggests that small additions of Cu in Sn-based solders have an insignificant effect on the shear strength of BGA solderjoints, especially during system use at high temperatures.     

Morphology and Pull Strength of Sn-Ag(-Co) Solder Joint with Copper Pad

In order to clarify the effect of the addition of Co to the Sn-Ag solder, the formation and growth of an intermetallic compound (IMC) at the interface between Sn-Ag(-Co) solders and a Cu pad were investigated, and the joint strength of the solder with a Cu pad was also evaluated by a bump pull test. Binary Sn-3.5mass%Ag solder was used as the basic solder, and Sn-3.5mass%Ag-xCo solders (x = 0.1 mass%, 0.3 mass%, and 0.5 mass%) were specially prepared as Co-added solders. For the reflow process, specimens were heated in a radiation furnace at 523 K for 60 s. For the aging process, some specimens were then heat-treated in an oil bath at 423 K for 168 h, 504 h, and 1008 h. The results show that the addition of Co to the Sn-Ag solder strongly affected the formation and growth of the IMC at the interface. The results of the pull test clearly show that all solders had similar pull strengths, regardless of the Co addition, although the IMC morphology at the interface of the Sn-Ag-Co solder was quite different from that of the binary Sn-3.5Ag solder. (Received . . . ; accepted . . . )     

The effect of soldering process variables on the microstructure and mechanical properties of eutectic Sn-Ag/Cu solder joints

Fundamental understanding of the relationship among process, microstructure, and mechanical properties is essential to solder alloy design, soldering process development, and joint reliability prediction and optimization. This research focused on the process-structure-property relationship in eutectic Sn-Ag/Cu solder joints. As a Pb-free alternative, eutectic Sn-Ag solder offers enhanced mechanical properties, good wettability on Cu and Cu alloys, and the potential for a broader range of application compared to eutectic Sn-Pb solder. The relationship between soldering process parameters (soldering temperature, reflow time, and cooling rate) and joint microstructure was studied systemati-cally. Microhardness, tensile shear strength, and shear creep strength were measured and the relationship between the joint microstructures and mechani-cal properties was determined. Based on these results, low soldering tempera-tures, fast cooling rates, and short reflow times are suggested for producing joints with the best shear strength, ductility, and creep resistance.     

Aging study on interfacial microstructure and solder-ball shear strength of a wafer-level chip-size package with Au/Ni metallization on a Cu pad

Eutectic solder balls (63Sn-37Pb) joined to Cu pads with an Au/Ni metallization have been widely used in wafer-level chip-size package (WLCSP) technology for providing electrical and mechanical interconnections between components. However, some reliability issues must be addressed regarding the intermetallic compounds (IMCs). The formation of a brittle IMC layer between the solder/Cu pad interface impacts considerably upon the solder-ball shear strength. In addition, it will degrade the long-term operating reliability of the WLCSP. This study investigates, by means of experiments, the growth of the IMC layer under isothermal aging for the eutectic Sn-Pb solder reflowed on a Cu pad with an Au/Ni metallization. Forming the Cu pad with an Au/Ni metallization was achieved by a simple semiconductor-manufacturing process. The effects of the intermetallic layer on solder-ball shear strength were examined for various parameters, including the thickness of the Au layer, solder-ball size, and the diameter of the Cu pad. Experimental results indicate that two IMC layers, Au_0.5Ni_0.5Sn₄ and Ni₃Sn₄, form at the solder/Cu pad interface after aging. The Au_0.5Ni_0.5Sn₄ intermetallic layer dominates the total thickness of the IMC layer and grows with aging time while the solder-ball shear strength decreases after aging. The degradation of the solder-ball shear strength was found to be caused mainly by the formation of the Au_0.5Ni_0.5Sn₄ layer. The experimental results established that a thinner Au layer on Cu pad can effectively control the degradation of solder-ball shear strength, and this is especially true for smaller ball sizes.     

Plasma reflow bumping of Sn-3.5 Ag solder for flux-free flip chip package application

A new flux-free reflow process using Ar+10%H/sub 2/ plasma was investigated for application to solder bump flip chip packaging. The 100-/spl mu/m diameter Sn-3.5wt%Ag solder balls were bonded to 250-/spl mu/m pitch Cu/Ni under bump metallurgy (UBM) pattern by laser solder ball bonding method. Then, the Sn-Ag solder balls were reflowed in Ar+H/sub 2/ plasma. Without flux, the wetting between solder and UBM occurred in Ar+H/sub 2/ plasma. During plasma reflow, the solder bump reshaped and the crater on the top of bump disappeared. The bump shear strength increased as the Ni/sub 3/Sn/sub 4/ intermetallic compounds formed in the initial reflow stage but began to decrease as coarse (Cu,Ni)/sub 6/Sn/sub 5/ grew at the solder/UBM interface. As the plasma reflow time increased, the fracture mode changed from ductile fracture within the solder to brittle fracture at the solder/UBM interface. The off-centered bumps self-aligned to patterned UBM pad during plasma reflow. The micro-solder ball defects occurred at high power prolonged plasma reflow.     

Correlation between interfacial reactions and mechanical strengths of Sn(Cu)/Ni(P) solder bumps

The correlation between interfacial reactions and mechanical strengths of Sn(Cu)/Ni(P) solder bumps has been studied. Upon solid-state aging, a diffusion-controlled process was observed for the interfacial Ni-Sn compound formation of the Sn/Ni(P) reaction couple and the activation energy is calculated to be 42 KJ/mol. For the Sn0.7Cu/Ni(P), in the initial aging, a needle-shaped Ni-Sn compound layer formed on Ni(P). Then, it was gradually covered by a layer of the Cu-Sn compound in the later aging process. Hence, a mixture layer of Ni-Sn and Cu-Sn compounds formed at the interface. For the Sn3.0Cu/Ni(P), a thick Cu-Sn compound layer quickly formed on Ni(P), which retarded the Ni-Sn compound formation and resulted in a distinct Cu-Sn compound/Ni(P) interface. The shear test results show that the mixture interface of Sn0.7Cu bumps have fair shear strengths against the aging process. In contrast, the distinct Cu-Sn/Ni(P) interface of Sn3.0Cu solder bumps is relatively weak and exhibits poor resistance against the aging process. Upon the reflowing process, the gap formation at the Ni(P)/Cu interface caused a fast degradation in the interfacial strength for Sn solder bumps. For Sn0.7Cu and Sn3.0Cu solder bumps, Ni₃P formation was greatly retarded by the self-formed Cu-Sn compound layer. Therefore, Sn(Cu) solder bumps show better shear strengths over the Sn solder bump.     

铝/镍/铜UBM厚度对SnAgCu焊点的力学性能及形貌影响

研究了倒装芯片中UBM制备和焊球回流工艺流程。通过改变阻挡层Ni和浸润层Cu的厚度,结合推拉力测试实验,探究了SnAgCu焊点剪切强度的变化规律。研究结果表明,UBM中阻挡层Ni对SnAgCu焊点的力学性能影响最大,而浸润层Cu厚度的增加也能提高SnAgCu焊点的力学性能。进一步对推拉力实验后的焊点形貌进行了SEM观察和EDS分析,得到了焊盘剥离、脆性断裂、焊球剥离、韧性断裂四种不同的焊点失效形式,代表着不同的回流质量,而回流质量主要由UBM的成分和厚度决定。研究结果为倒装焊工艺的优化提供了理论指导。     

Kinetics of intermetallic formation at Sn-37Pb/Cu interface during reflow soldering

The kinetics of the intermetallic layer formation at Sn-37wt.%Pb solder/Cu pad interface during reflow soldering were studied. The growth kinetics were analyzed theoretically by assuming that the mass flux of Cu through channels between scalloplike grains primarily contributes to the growth. Rate-controlling steps considered for the mass flux were the Cu dissolution from the bottom of the channels, diffusion through the channel, and the formation reaction of the intermetallic layer. These results indicated that a transition in the growth rate observed around 120–150 sec of reflow time may be associated with transition of the rate-controlling step from the Cu dissolution to the Cu diffusion through the channel.     

Manufacturing and materials properties of Ti/Cu/ElectrolessNi/solder bump on Si

This work attempted to fabricate the solder bump with the structure: Si/Ti/Cu/Electroless Ni/solder. The shear strength of the solder bump, with bump pad of 60 μm in diameter, is around 15 g/bump prior to and after reflow. The solder bumps fractured at the solder. Humidity test at 85% of relative humidity at 85°C and a high temperature treatment at 150°C for 1000 h tend to downgrade the shear strength of the solder portion of the bump, yet not the interface. Both treatments enhance the growth of intermetallic compound (IMC) formed between Ni and solder. The barrier effect of electroless nickel deposit was investigated     

Reliability testing of WLCSP lead-free solder joints

The interfacial reactions of solder joints between Sn-4Ag-0.5Cu solder ball and a couple of presoldered pastes (Sn-7Zn-Al(30ppm) and Sn-3Ag-0.5Cu) were investigated in wafer-level chip-scale package (WLCSP). After appropriate surface mount technology reflow processes on printed circuit boards with a Cu/OSP (organic solderability preservative) surface finish, samples were subjected to 150°C high-temperature storage (HTS) for 1,000 h of aging or 1,000 cycles of a thermal cycling test (TCT). Sequentially, cross-section analysis is scrutinized by scanning electron microscopy/energy dispersive spectrometry and energy probe microanalysis to observe metallurgical evolution in the interface and solder buck itself. It was found that the degradation of the joint shear strength after TCT is more pronounced than that of the shear strength after HTS. Fracture surface analyses of the shear tests show that the degradation of the joint strength for HTS is solely due to the influence of the interfacial IMC grain growth, while the shear strength degradation for TCT is mainly due to the coefficient thermal expansion mismatch from the thermal cycling at the chip-solder interface and can lead to the occurrence of the crack.     

Joint shape, microstructure, and shear strength of lead-free solder joints with different component terminations

The joint shape, microstructure, and shear strength of 95Sn5Sb solder joints with components with different terminal metallizations (AgPd and Ni/AgPd) were investigated and compared to 62Sn36Pb2Ag solder. The rapid reaction between SnSb solder and AgPd leads to the solder not spreading entirely on the Cu pad but agglomerating on the component termination. The shear strength of the SnSb/AgPd solder joint is very low and fracture occurs at the original interface of the AgPd/ceramic. The Ni layer in the SnSb/Ni/AgPd joint effectively avoids interdiffusion between the AgPd and the solder so that a high-strength solder joint with an ideal shape is achieved. However, the terminations of the components have little effect on the shape and the shear strength of the SnPbAg solder joint. Fracture occurs in the SnPbAg solder after shear testing to failure.     

Reaction characteristics of the In-15Pb-5Ag solder with a Au/Ni/Cu pad and their effects on mechanical properties

Reaction characteristics of the In-15Pb-5Ag (wt.%) solder with a Au/Ni/Cu pad during reflow soldering and aging treatment were examined. Interfacial reaction during reflow resulted in either an AuIn₂ or Ni₂₈In₇₂ layer, depending on reflow time. The AuIn₂ layer became thinner and disappeared from the interface, and only the Ni₂₈In₇₂ layer grew with the progress of aging treatment at 130°C. Based on those observations, the dissolution rate of the Au top layer was estimated, and the behavior of the AuIn₂ layer during reflow and aging treatment was discussed. In addition, peak shear load and fracture energy of the solder bump were measured as a function of reflow time and aging treatment. The results were compared with those measured with the Sn-37Pb solder bump.     

Effects of self-aligned electroplating Cu pillar/Sn-xAg bump on dense Al lines for chip-to-package connection

Self-aligned electroplating is applied to form the Cu pillar/Sn-Ag bump for semiconductor device packaging, while passivation SiN cracks are usually observed at the bump edge on the bump of the array (BOA). In this paper, the simulation method was used to investigate the mechanism of SiN cracks and then, the bump process was optimized to improve the mechanical properties of the Cu pillar/Sn-Ag bump. It was found that higher reflow rounds could improve the shear strength due to the large degree of contact between the rugged scallop-like shape of the Cu₆Sn₅ and the Sn-Ag solder. The fracture plane cleaved between the Sn-Ag and Cu₆Sn₅ interface is consistent with the simulation results. The hardness of the Sn‒Ag solder is proportional to the reflow rounds, and the amount of Ag₃Sn phase precipitation within the Sn-Ag solder contributes to the hardness value. In contrast, the disadvantage is that thermal residual stress could deteriorate the SiN crack, especially for a BOA structure The study concludes that an optimal bump process, including Sn-2%Ag solders at 260 °C for 30 s, could obtain a high shear strength and appropriate solder hardness without passivated SiN cracking.     

Mechanisms and solutions to the brittle solder joint in electroless Ni plating

Brittle solder joints in Electroless Ni electroless Pd immersion Au (ENEPIG) surface finishes are one of the key reliability issues in electronics assembly. Previous characterization of the reflow process has indicated that interfacial voids formed after solder reflow are responsible for the decreases in solder joint strength. However, the mechanisms behind the formation of these voids in the ENEPIG process remain unclear. In this paper, the interaction between various aspects of the ENEPIG process and solder joint strength were investigated. Surface roughness, morphology, and nano-pitting at the interface between electroless Pd and Ni-P were characterized. The size and density of nano voids inside Ni₂SnP were measured after the specimens were reflowed with Sn4Ag0·5Cu solder ball. Additionally, high speed shear solder joint strength measurements were made. The results indicated that anion adhesion induced nano-pitting at the interface between the Ni₂SnP intermetallic and Pd, resulting in the formation of a nano void layer during reflow. These interfacial voids lead to lower solder joint strength. Based on the results, a solution to prevent the brittle solder joint failures is suggested.     

Demonstration and Characterization of Sn-3.0Ag-0.5Cu/ Sn-57Bi-1Ag Combination Solder for 3-D Multistack Packaging

A combination solder of Sn-3.0Ag-0.5Cu (numbers are all in weight percent unless specified otherwise) wrapped by Sn-57Bi-1Ag was tested for application to three-dimensional (3-D) multistack packaging. The experimental variables controlled were the reflow peak temperatures (170, 185, 200, and 230°C), the reflow cycles (up to four times), and the mask which controls the amount of Sn-57Bi-1Ag solder paste (two sizes). We demonstrate and evaluate the combination solder structure, focusing on microstructural changes and the shear strength. The degree of mixing in the combination solder, which is enhanced by an increase in the reflow peak temperature, is independent of the number of reflow cycles. The ball shear strength and the lab shear strength both increased with increases in the reflow peak temperatures. This behavior is explained by the amount of the brittle Bi phase that constitutes the eutectic Sn-Bi phase.     

Reaction kinetics of solder-balls with pads in BGA packages during reflow soldering

The Au/Ni/Cu three-layer structure is one of the most common solder-ball pad finishes for the ball-grid-array (BGA) packages. The first layer, which is to be in direct contact with the solder, is a 1-μm Au layer. Beneath the Au layer is the Ni layer, whose thickness is about 7 μm. The Cu layer is part of the internal wiring of a BGA package. In this study, eutectic PbSn solder-balls were reflowed on the Au/Ni/Cu pads at 225°C for reflow times from 7.5 s to 1003 s. It was found that the Au layer reacted very quickly with the solder to form AuSn₄ and AuSn₂. The growth rate of AuSn₄ + AuSn₂ was very high, approaching 1 μm/s. When the reflow time reached 10 s, all the Au had been consumed, and AuSn₂ had been converted to AuSn₄. Moreover, AuSn₄ grains began to separate themselves from the Ni layer at the roots of the grains, and started to fall into the solder. When the reflow time reached 30 s, all AuSn₄ grains had left the interface and a thin layer of Ni₃Sn₄ formed at the solder-Ni interface. The growth rate of this Ni₃Sn₄ layer was very low, reaching only 6 μm for 1003 s of reflow. This study showed that during reflow the Au layer reacted with Sn to form AuSn₄ first, and then broke off and fell into the molten solder. In other words, the Au layer did not dissolve into the molten solder directly during reflow.     

Intermetallic reactions in a Sn-20In-2.8Ag solder ball-grid-array package with Au/Ni/Cu pads

The intermetallic compounds formed during the reflow and aging of Sn-20In-2.8Ag ball-grid-array (BGA) packages are investigated. After reflow, a large number of cubic-shaped AuIn₂ intermetallics accompanied by Ag₂In precipitates appear in the solder matrix, while a Ni(Sn_0.72Ni_0.28)₂ intermetallic layer is formed at the solder/pad interface. With further aging at 100°C, many voids can be observed in the solder matrix and at the solder/pad interface. The continuous distribution of voids at the interface of specimens after prolonged aging at 100°C causes their bonding strength to decrease from 5.03 N (as reflowed) to about 3.50 N. Aging at 150°C induces many column-shaped (Cu_0.74Ni_0.26)₆(Sn_0.92In_0.08)₅ intermetallic compounds to grow rapidly and expand from the solder/pad interface into the solder matrix. The high microhardness of these intermetallic columns causes the bonding strength of the Sn-20In-2.8Ag BGA solder joints to increase to 5.68 N after aging at 150°C for 500 h.