Peculiarities of component interaction in {Gd, Er}-V-Sn Ternary systems at 870 K and crystal structure of RV6Sn6 stannides

The phase equilibria in the Gd-V-Sn and Er-V-Sn ternary systems were studied at 870 K by means of X-ray and metallographic analyses in the whole concentration range. Both Gd-V-Sn and Er-V-Sn systems are characterized by formation of one ternary compound at investigated temperature, with stoichiometry RV₆Sn₆ (SmMn₆Sn₆-type, space group P6/mmm, a = 0.55322(3) nm, c = 0.91949(7) nm for Gd, a = 0.55191(2) nm, c = 0.91869(8) nm for Er). Solubility of the third component in the binary compounds was not observed. Compounds with the SmMn₆Sn₆-type were also found with Dy, Ho, Tm, and Lu, while YV₆Sn₆ compound crystallizes in HfFe₆Ge₆ structure type. All investigated compounds are the first ternary stannides with rare earth elements and vanadium.     

High-Q microwave dielectrics in the (Mg1−xZnx)Al2O4 (x = 0-0.1) system

The microwave dielectric properties and the microstructures of (Mg_1−xZn_x)Al₂O₄ (x = 0-0.1) ceramic system prepared by the conventional solid-state route were investigated. The forming of spinel-structured (Mg_1−xZn_x)Al₂O₄ (x = 0-0.1) solid solutions was confirmed by the XRD patterns and the measured lattice parameters, which linearly varied from a = b = c = 8.0815 Å for MgAl₂O₄ to a = b = c= 8.0828 Å for (Mg_0.9Zn_0.1)Al₂O₄. By increasing x, the Q × f of (Mg_1−xZn_x)Al₂O₄ can be tremendously boosted from 82,000 GHz at x = 0 to a maximum of 156,000 GHz at x = 0.05. The Zn substitution was effective in reducing the dielectric loss without detrimental effects on the ?_r and τ_f values of the ceramics.     

Crystal structures and magnetic properties of iron (III)-based phosphates: Na4NiFe(PO4)3 and Na2Ni2Fe(PO4)3

Crystal structures from two new phosphates Na₄NiFe(PO₄)₃ (I) and Na₂Ni₂Fe(PO₄)₃ (II) have been determined by single crystal X-ray diffraction analysis. Compound (I) crystallizes in a rhombohedral system (S. G: R-3c, Z = 6, a = 8.7350(9) Å, c = 21.643(4) Å, R₁ = 0.041, wR₂=0.120). Compound (II) crystallizes in a monoclinic system (S. G: C2/c, Z = 4, a = 11.729(7) Å, b = 12.433(5) Å, c = 6.431(2) Å, β = 113.66(4)°, R₁ = 0.043, wR₂=0.111). The three-dimensional structure of (I) is closely related to the Nasicon structural type, consisting of corner sharing [(Ni/Fe)O₆] octahedra and [PO₄] tetrahedra forming [NiFe(PO₄)₃]⁴⁺ units which align in chains along the c-axis. The Na⁺ cations fill up trigonal antiprismatic sites within these chains. The crystal structure of (II) belongs to the alluaudite type. Its open framework results from [Ni₂O₁₀] units of edge-sharing [NiO₆] octahedra, which alternate with [FeO₆] octahedra that form infinite chains. Coordination of these chains yields two distinct tunnels in which site Na⁺.The magnetization data of compound (I) reveal antiferromagnetic (AFM) interactions by the onset of deviations from a Curie-Weiss behaviour at low temperature as confirmed by Mössbauer measurements performed at 4.2 K. The corresponding temperature dependence of the reciprocal susceptibility χ⁻¹ follows a typical Curie-Weiss behaviour for T > 105 K. A canted AFM state is proposed for compound (II) below 46 K with a field-induced magnetic transition at H ≈ 19 kOe, revealed in the hysteresis loop measured at 5 K. This transition is most probably associated with a spin-flop transition.     

CuIn1−xAlxS2 thin films prepared by sulfurization of metallic precursors

CuIn_1−xAl_xS₂ thin films (x = 0, 0.09, 0.27, 0.46, 0.64, 0.82 and 1) with thicknesses of approximately 1 μm were formed by the sulfurization of DC sputtered Cu-In-Al precursors. All samples were sulfurized in a graphite container for 90 min at 650 °C in a 150 kPa Ar + S atmosphere. Final films were studied via X-ray diffraction (XRD), scanning electron microscopy (SEM) and micro-Raman spectroscopy. It was found that all samples were polycrystalline in nature and their lattice parameters varied slightly nonlinearly from {a = 5.49 Å, c = 11.02 Å} for CuInS₂ to {a = 5.30 Å, c = 10.36 Å} for CuAlS₂. No unwanted phases such as Cu_2−xS or others were observed. Raman were recorded at a room temperature and the most intensive and dominant A₁ phonon frequency varied nonlinearly from 294 cm⁻¹ (CuInS₂) to 314 cm⁻¹ (CuAlS₂).     

Synthesis, crystal and band structures, and optical properties of a new framework mercury pnictides: [Hg4As2](InBr3.5As0.5) with tridymite topology

A new framework compound, [Hg₄As₂](InBr_3.5As_0.5) (1), has been prepared by the solid-state reaction of Hg₂Br₂ with elemental In and As at 450 °C. Compound 1 crystallizes in the space group P₆₃/mmc of the Hexagonal system with two formula units in a cell: a = b = 7.7408(6) Å, c = 12.5350(19) Å, V = 650.47(12) Å³. The crystal structure of 1 features a novel 3D framework, [Hg₄As₂]²⁺ with tridymite topology. The optical properties were investigated in terms of the diffuse reflectance and infrared spectra. The electronic band structure along with density of states (DOS) calculated by DFT method indicates that the present compound is semiconductor, and the optical absorption is mainly originated from the charge transitions from Br-4p and As-4p states to Hg-6s and In-5p states.     

Synthesis, structure, and properties of Li2Pb2CuB4O10 with isolated [CuB4O10] units

The copper borate Li₂Pb₂CuB₄O₁₀ has been synthesized in air by the standard solid-state reaction at temperature in the range 550-650 °C and the structure of Li₂Pb₂CuB₄O₁₀ was determined by single-crystal X-ray diffraction. Li₂Pb₂CuB₄O₁₀ crystallizes in the monoclinic space group C2/c (no. 15) with a = 16.8419(12), b = 4.7895(4), c = 13.8976(10) Å, and β = 125.3620(10)°, V = 914.22(12) Å³, and Z = 4, as determined by single-crystal X-ray diffraction. The Li₂Pb₂CuB₄O₁₀ structure exhibits isolated units of stoichiometry [CuB₄O₁₀]⁶⁻ that are built from CuO₄ distorted square planes and triangular BO₃ groups. The IR spectroscopy and thermal analysis investigations of Li₂Pb₂CuB₄O₁₀ are also presented.     

Synthesis, crystal structures, and optical properties of NaCdPnS3 (Pn = As, Sb)

Two compounds NaCdPnS₃ (Pn = As (1), Sb (2)) were synthesized as transparent yellow and red platelets by reacting cadmium powder with the molten mixtures of Na₂S/As₂S₃/S and Na₂S/Sb/S at 500 °C. Both compounds are plagued with crystal twinning and acceptable crystal structure refinement could only be obtained by identifying the type of the twinning laws. NaCdAsS₃ (1) crystallizes in the monoclinic space group P2₁/n (no. 14) with a = 5.6561(8), b = 16.5487(15), c = 5.6954(8) Å, β = 90.315(11)°, and Z = 4. NaCdSbS₃ (2) crystallizes in the monoclinic space group C2/c (no. 15) with a = 8.1329(6), b = 8.1296(4), c = 17.2600(13) Å, β = 103.499(6)°, and Z = 8. The structures of both compounds feature a ²_∞[CdPnS₃]⁻ layer composed of [CdS₄] tetrahedra and [AsS₃] or [SbS₃] pyramidal units. Between the ²_∞[CdPnS₃]⁻ (Pn = As, Sb) layers the Na⁺ cations reside in a distorted octahedral environment of S atoms. Compound 1 is characterized with UV/Vis diffuse reflectance spectroscopy and IR and Raman spectra.     

Ferroelectric relaxor behavior and dielectric spectroscopic study of 0.99(Bi0.5Na0.5TiO3)-0.01(SrNb2O6) solid solution

0.99(Bi_0.5Na_0.5TiO₃)-0.01(SrNb₂O₆) was prepared by simple solid state reaction route. Material stabilized in rhombohedral perovskite phase with lattice constants a = 3.9060 Å, α = 89.86° and a_h = 5.4852 Å, c_h = 6.7335 Å for hexagonal unit cells. Density of material was found 5.52 g_m/cm³ (92.9% of theoretical one) in the sample sintered at 950 °C. The temperature dependent dielectric constant exhibits a broad peak at 538 K (?_m = 2270) at 1 kHz that shows frequency dependent shifts toward higher temperature - typical relaxor behavior. Modified Curie-Weiss law was used to fit the dielectric data that exhibits almost complete diffuse phase transition characteristics. The dielectric relaxation obeys the Vogel-Fulcher relationship with the freezing temperature 412.4 K. Significant dielectric dispersion is observed in low frequency regime in both components of dielectric response and a small dielectric relaxation peak is observed. Cole-Cole plots indicate polydispersive nature of the dielectric relaxation; the relaxation distribution increases with increase in temperature.     

Study on the crystal structure of the rare earth oxyborate Yb26B12O57 from powder X-ray and neutron diffraction

Yb₂₆B₁₂O₅₇, a rare earth oxyborate previously assigned as Yb₃BO₆, has been studied by various techniques including neutron and X-ray diffraction, ¹¹B NMR spectroscopy, electron diffraction and high angle angular dark field-scanning transmission electron microscopy (HADDF-STEM). It crystallizes in the space group C2/m with cell parameters of a = 24.5780(4) Å, b = 3.58372(5) Å, c = 14.3128(3) Å and β = 115.079(1)°. The structure consists of slabs of rare earth sesquioxide and borate groups. The sesquioxide part is identified from the structural refinement, and is observed from HADDF-STEM image, while elucidation of borate groups is not straightforward. An additional oxygen atom (O31), which links two B₂O₅ groups into a B₄O₁₁ polyanion, is identified from the analysis of neutron diffraction data. The occupancy of this oxygen site is only quarter, which results in a random distribution of B₄O₁₁ and B₂O₅ groups along the b-direction. The chemical formula of ytterbium oxyborate is Yb₂₆(BO₃)₄(B₂O₅)₂(B₄O₁₁)O_24, instead of the simple stoichiometric formula Yb₃BO₆. This compound is paramagnetic but its susceptibility deviated from the Curie-Weiss law at low temperature.     

Synthesis and structure determination of In3TeO3F7: An indium oxyfluorotellurate IV derived from W bronze structure with Te in hexagonal tunnels

After InTeO₃F and InTe₂O₅F recently described, a new compound In₃TeO₃F₇ is characterized in the In-Te^IV-O-F system. The crystal structure was determined by single X-ray diffraction and refined to R₁ = 0.028. In₃TeO₃F₇ crystallizes in orthorhombic space group Cmmm, a = 7.850(2) Å, b = 27.637(6) Å, c = 4.098(1) Å, V = 889.1(4) Å³ and Z = 4. Its structure consists of the stacking, via vertices, of identical layers composed of InF₆ and InO₂F₄ octahedra sharing corners and of InO₄F₃ pentagonal bipyramids sharing edges and vertices. The Te cations statistically occupy one or the other of two close sites located inside tunnels delimited by the In polyhedra and are bonded to F anions located in the same tunnels.The structure can be considered as an intergrowth of parallel strips of MIn₃F₁₀ and hexagonal tungsten bronze (c)-types. It is compared to other structures such as the bronze Sb_0.157WO₃, TeMo₅O₁₆ and Sb₂Mo₁₀O₃₁, phases also comprising Te⁴⁺ or Sb³⁺ inside hexagonal tunnels. The electronic lone pair of Te⁴⁺ is stereochemically active and a perfect O/F ordering occurs on the anionic sites.     

Growth, crystal structure and optical properties of layered dibarium cadmium diborate, Ba2Cd(BO3)2

A novel dibarium cadmium diborate, Ba₂Cd(BO₃)₂, has been successfully synthesized by standard solid-state reaction. Large sheet-like crystal with size up to 20 mm × 15 mm × 0.7 mm has been obtained using top-seed solution growth method. Ba₂Cd(BO₃)₂ crystallizes in the monoclinic space group C2/m with a = 9.6305(4) Å, b = 5.3626(3) Å, c = 6.5236(2) Å, β = 118.079(3)°, Z = 2. The crystal structure is composed of isolated [BO₃] triangles, [CdO₆] octahedra and [BaO₉] polyhedra. CdO₆ are vertex-connected with six BO₃ to form infinite _∞[Cd(BO₃)₂] layers extending in (0 0 1) plane, and two rows of Ba atoms closely occupy two side of _∞[Cd(BO₃)₂] layers to forming stoichiometric sheets. IR and transmittance spectrum of Ba₂Cd(BO₃)₂ were reported.     

Room temperature crystallization kinetics of amorphous Cu6Sn5 + C alloys

Thin film combinatorial sputter deposited Cu₆Sn₅ + C alloys were prepared and found to be amorphous and/or nanostructured upon removal from the sample preparation chamber. Samples having approximate compositions (Cu₆Sn₅)_1−xC_x with 0.16 < x < 0.26 have been stored at room temperature and investigated over the course of about one year using X-ray diffraction (XRD). Simple models were employed to analyze the observed changes in the XRD patterns. Relatively sharp (nanocrystalline) components having Bragg angles corresponding to hexagonal Cu₆Sn₅ grew in intensity at the expense of broader (amorphous) components as a function of time. The grain size of the nanocrystalline components was approximately time independent, but depended on the amount of carbon present. The logarithm of the recrystallization time and the activation energy for crystallization appeared to be linearly dependent on the carbon content for the composition range that has been studied, as inferred from the Avrami-Johnson-Mehl equation. XRD patterns of samples with x > 0.26 appear to be relatively unchanged after a period of storage at room temperature for one year.     

Microwave synthesis, structure, and magnetic properties of quasi-one-dimensional complex oxide Sr4LiMn2O9

The complex oxide Sr₄LiMn₂O₉ belonging to the A_3n+3mA′_nMn_3m+nO_9m+6n family (m = 3, n = 1) was prepared from a mixture of SrCO₃ and LiMn₂O₄ in a microwave furnace by the solid state reaction. The results of structural refinements and magnetic properties are presented. The crystal structure of Sr₄LiMn₂O₉ was solved using simultaneously X-ray and neutron diffraction data with the GSAS program in the space group P321 with unit cell parameters: a = 9.5721(7) Å, c = 7.8264(5) Å, V = 621.025 Å³, Z = 3. Sr₄LiMn₂O₉ was found to contain 2 independent 1D chains of face-shared polyhedrons with a sequence of two octahedrons and one trigonal prism. The chains are separated by strontium cations. The refinement results show that the octahedrons and trigonal prisms in the first chain orderly contain Mn and Li, respectively, whereas the second chain is characterized by mixed occupation of these structural positions. The temperature dependence of the magnetic susceptibility of Sr₄LiMn₂O₉ was found to be due to antiferromagnetically coupled dimers from magnetic Mn cations.     

Phase structure and electrical properties of (0.8 − x) BaTiO3-0.2Bi0.5Na0.5TiO3-xBaZrO3 lead-free piezoceramics

Lead-free piezoelectric ceramics (0.8 − x)BaTiO₃-0.2Bi_0.5Na_0.5TiO₃-xBaZrO₃ (BT-BNT-xBZ, 0 ≤ x ≤ 0.08) doped with 0.3 wt% Li₂CO₃ were prepared by conventional solid-state reaction method. With the Li₂CO₃ doping, all the ceramics can be well sintered at 1170-1210 °C. The phase structure, dielectric, ferroelectric and piezoelectric properties of the ceramics were investigated. Results show that a morphotropic phase boundary (MPB) between tetragonal and pseudocubic phases exists at x = 0.03-0.04. The addition of Zr can improve the piezoelectric properties of BT-BNT ceramics. Furthermore, a relaxor behavior is induced and the tetragonal-cubic phase transition shifts towards lower temperatures after the addition of Zr. The ceramics with x = 0.03 possess the optimum electrical properties: d₃₃ = 72 pC/N, k_p = 15.4%, ?_r = 661, P_r = 18.5 μC/cm², E_c = 34.1 kV/cm, T_c = 150 °C.     

Microstructure, ferroelectric, and piezoelectric properties of (1 − x − y)Bi0.5Na0.5TiO3-xBaTiO3-yBi0.5Ag0.5TiO3 lead-free ceramics

Lead-free (1 − x − y)Bi_0.5Na_0.5TiO₃-xBaTiO₃-yBi_0.5Ag_0.5TiO₃ (BNT-BT-BAT-x/y, x = 0-0.10, y = 0-0.075) piezoelectric ceramics were synthesized by conventional oxide-mixed method. The microstructure, ferroelectric, and piezoelectric properties of the ceramics were investigated. Results show that a morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases of BNT-BT-BAT-x/0.04 ceramics is formed at x = 0.06-0.08. The addition of BAT has no obvious change on the crystal structure of BNT-BT ceramics while it causes the grain size of the ceramics to become more homogenous. Near the MPB, the ceramics with x = 0.06 and y = 0.05-0.06 possess optimum electrical properties: P_r ∼ 42.5 μC/cm², E_c ∼ 32.0 kV/cm, d₃₃ ∼ 172 pC/N, k_p ∼ 32.6%, and k_t ∼ 52.6%. The temperature dependences of k_p and polarization versus electric hysteresis loops reveal that the depolarization temperature (T_d) of BNT-BT-BAT-0.06/y ceramics decreases with increasing y. In addition, the polar and non-polar phases may coexist in the BNT-BT-BAT-x/y ceramics above T_d.     

Phase range and physical properties of the thallium tin tellurides Tl10−xSnxTe6 (x ≤ 2.2)

Crystal structures and physical property measurements were determined for Tl_10−xSn_xTe₆ with a phase range of 0 ≤ x ≤ 2.2. These tellurides are substitution variants of Tl₅Te₃. Electronic structure calculations indicate that Tl₈Sn₂Te₆ should be an intrinsic semiconductor, and the Sn-poor variants, extrinsic ones with p-type conduction. The positive Seebeck values increase with increasing Sn content, while the electrical and thermal conductivity values decrease. Low thermal conductivity values, well below 1 W m⁻¹ K⁻¹, are the best asset of these materials with respect to thermoelectric performance. At x = 2.2, the best thermoelectric properties were obtained, with a figure-of-merit ZT = 0.60 at 617 K as determined on sintered cold-pressed pellets.     

Structure and electrical conduction behavior of LiZnVO4 ceramic prepared by solution-based chemical route

In the present work, an evaluation of the structural and electrical properties of a compound (LiZnVO₄) has been undertaken. This compound was prepared by solution-based chemical route. The electrical properties were measured using a.c. impedance spectroscopy method in the frequency range of 10³-10⁶ Hz at various temperatures from 28 to 300 °C. X-ray diffraction study indicates a rhombohedral unit cell structure with lattice parameters a = 14.1934 Å, b = 14.1934 Å, c = 9.4926 Å, V = 1656.12 (Å)³, α = 90°, β = 90° and γ = 120°. A field emission scanning electron micrograph reveals a polycrystalline texture of the compound with grains of unequal sizes ∼0.2-2.0 μm. The electrical conduction in the material is a thermally activated process due to the bulk effect. Frequency dependence of a.c. conductivity obeys Jonscher's universal law (σ_ac = σ_dc + Aωⁿ).