Preparation of antireflective SiO2 nanometric films

Antireflective nanometric SiO₂ films were formed on glass substrates by dip coating from a colloidal SiO₂ sol having an average particle size of 9 nm. Withdrawal speed of dip coating was varied between 100 and 200 mm/min with 25 mm increments, and baking temperature of the films was altered between 300 and 550 °C with 50 °C increments. Obtained SiO₂ films were in 80–200 nm thickness range. Film thickness was seen to increase with increasing withdrawal speed and to decrease with increasing baking temperature. A maximum light transmittance of 95% was obtained with 4.5% points increase, from the films which were withdrawn at 100 mm/min and baked at 450 or 500 °C. It was seen from SEM observations that the films exhibited full coverage on glass surface and contained no voids or cracks. Size of SiO₂ particles in the film was seen in the AFM analyses to increase with baking temperature. Sintering of SiO₂ particles appeared to accelerate at temperatures over 450 °C.     

Mechanical properties of nano-grain SiO2 glass prepared by spark plasma sintering

Silicon carbide (SiC) layers were deposited on silica (SiO₂) glass powder by rotary chemical vapor deposition (RCVD) to form SiO₂ glass (core)/SiC (shell) powder; this powder was consolidated by spark plasma sintering (SPS). SiO₂ glass powder with a particle size of 250 nm was coated with 5–10-nm-thick SiC layers. The resultant SiO₂ glass (core)/SiC (shell) powder was consolidated to form a nano-grain SiO₂ glass composite at a relative density above 90% by SPS in the sintering temperature range of 1573–1823 K. The Vickers hardness and fracture toughness of the SiO₂ glass composite at 1723 K were found to be 14.2 GPa and 5.4 MPa m^1/2, respectively.     

Enhancing the thermoelectric properties of super-lattice Al2O3/ZnO atomic film via interface confinement

Aluminum oxide (Al₂O₃)/zinc oxide (ZnO) thin films deposited via atomic layer deposition (ALD) are demonstrated to enhance their thermoelectric properties by manipulating them with a nano-thick Al₂O₃ interface. The overall superlattice structure is tuned by varying the ZnO ALD sequence and the Al₂O₃ ALD sequence while maintaining the same composition. An aluminum-doped zinc oxide (AZO) thin film is deposited at 250 °C, and the Al₂O₃ thickness in the superlattice is gradually increased from 0.13 nm to 1.23 nm. The total film composition is fixed at 2% AZO. We observe that an efficient superlattice structure is made with a specific Al₂O₃ thickness. The thermal conductivity is significantly decreased from 0.57 W/mK to 0.26 W/mK as the thickness of the Al₂O₃ layer is increased. Additionally, the absolute Seebeck coefficient is increased from 14 μV/K to 65 μV/K. This may be caused by the interface confinement effect and interface scattering between the ZnO layer and the Al₂O₃ layer. The figure of merit ZT value is 0.14 for the most efficient structure.     

Self-organized nano-crystallisation of BaF2 from Na2O/K2O/BaF2/Al2O3/SiO2 glasses

In glasses with the compositions (100 ? x)(2Na₂O·16K₂O·8Al₂O₃·74SiO₂)xBaF₂ (with x = 0 to 6), the glass transition temperature decreases with increasing BaF₂-concentration. Samples with x = 6 were thermally treated at temperatures in the range from 500 to 600 °C for 5–160 h. This leads to the crystallisation of BaF₂. The quantity of crystalline BaF₂ increases with increasing time of thermal treatment, while the mean crystallite size remains constant within the limits of error. The glass transformation temperature of partially crystallised samples increases with increasing crystallisation time and approaches a value equal to the temperature, at which the samples were treated. This is explained by the formation of a highly viscous layer enriched in SiO₂ which is formed during crystallisation. This layer acts as a diffusion barrier and hinders further crystal growth.     

Dielectric behavior and magnetical response for porous BFO thin films with various thicknesses over Pt/Ti/SiO2/Si substrate

A novel sol–gel method has been developed to deposit multiferroic nanocrystalline bismuth ferrite (BFO) thin films over Pt/Ti/SiO₂/Si substrate by spin-coating technique with various thicknesses. It is found that the deposition parameters significantly influence the quality and the thickness of BiFeO₃ films. The films are all uniform and adherent to Pt/Ti/SiO₂/Si substrate. The spin-coated films are characterized by X-ray diffraction (XRD), Scanning electron microscope (SEM), Atomic force microscope (AFM), photoluminescence spectroscopy (PL) and Fourier transform infrared spectroscopy (FTIR). Rhombohedral structure of BFO is confirmed from the XRD and FT-IR studies. The SEM image shows a porous structure formation of BFO over Pt/Ti/SiO₂/Si substrate. The surface outgrowth for the films at various thicknesses is measured from root mean square (RMS) and surface roughness through AFM. The step height and the RMS are found to be high for the film at 500 nm in comparison with thickness of 200 nm. The influence of the dielectric properties of the porous BFO at different thicknesses is studied using LCRQ meter. Finally, the magnetic behavior of film is compared with M–H hysteresis loop and Magnetoresistance (MR) studies.     

Sintering of nanocrystalline Ta2O5 and ZrO2 films compared to that of TiO2 films

Thin (d = 60 nm/140 nm) nanocrystalline Ta₂O₅ and ZrO₂ films were deposited onto SiO₂ flakes, using a liquid route synthesis. Their sintering behaviour was characterized and compared to that of the corresponding powders and the known equivalent TiO₂ film in terms of grain size, grain growth and layer porosity. The effect of the substrate was noticeable on crystallisation process but not on grain growth. The sintering behaviour was actually dictated by the initial size and the packing of the precipitated grains related to the synthesis of the film.     

Improved electromagnetic absorbing properties of Si3N4–SiC/SiO2 composite ceramics with multi-shell microstructure

Porous Si₃N₄–SiC composite ceramic was fabricated by infiltrating SiC coating with nano-scale crystals into porous β-Si₃N₄ ceramic via chemical vapor infiltration (CVI). Silica (SiO₂) film was formed on the surface of rod-like Si₃N₄–SiC grains during oxidation at 1100 °C in air. The as-received Si₃N₄–SiC/SiO₂ composite ceramic attains a multi-shell microstructure, and exhibits reduced impedance mismatch, leading to excellent electromagnetic (EM) absorbing properties. The Si₃N₄–SiC/SiO₂ fabricated by oxidation of Si₃N₄–SiC for 10 h in air can achieve a reflection loss of ?30 dB (>99.9% absorption) at 8.7 GHz when the sample thickness is 3.8 mm. When the sample thickness is 3.5 mm, reflection loss of Si₃N₄–SiC/SiO₂ is lower than ?10 dB (>90% absorption) in the frequency range 8.3–12.4 GHz, the effective absorption bandwidth is 4.1 GHz.     

Fabrication of highly efficient TiO2/Ag/TiO2 multilayer transparent conducting electrode with N ion implantation for optoelectronic applications

Fabrication of highly conductive and transparent TiO₂/Ag/TiO₂ (referred hereafter as TAT) multilayer films with nitrogen implantation is reported. In the present work, TAT films were fabricated with a total thickness of 100 nm by sputtering on glass substrates at room temperature. The as-deposited films were implanted with 40 keV N ions for different fluences (1×10¹⁴, 5×10¹⁴, 1×10¹⁵, 5×10¹⁵ and 1×10¹⁶ ions/cm²). The objective of this study was to investigate the effect of N⁺ implantation on the optical and electrical properties of TAT multilayer films. X-ray diffraction of TAT films shows an amorphous TiO₂ film with a crystalline peak assigned to Ag (111) diffraction plane. The surface morphology studied by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) revealed smooth and uniform top layer of the sandwich structure. The surface roughness of pristine film was 1.7 nm which increases to 2.34 nm on implantation for 1×10¹⁴ ions/cm² fluence. Beyond this fluence, the roughness decreases. The oxide/metal/oxide structure exhibits an average transmittance ~80% for pristine and ~70% for the implanted film at fluence of 1×10¹⁶ ions/cm² in the visible region. The electrical resistivity of the pristine sample was obtained as 2.04×10⁻⁴ Ω cm which is minimized to 9.62×10⁻⁵ Ω cm at highest fluence. Sheet resistance of TAT films decreased from 20.4 to 9.62 Ω/□ with an increase in fluence. Electrical and optical parameters such as carrier concentration, carrier mobility, absorption coefficient, band gap, refractive index and extinction coefficient have been calculated for the pristine and implanted films to assess the performance of films. The TAT multilayer film with fluence of 1×10¹⁶ ions/cm² showed maximum Haacke figure of merit (FOM) of 5.7×10⁻³ Ω⁻¹. X-ray photoelectron spectroscopy (XPS) analysis of N 1s and Ti 2p spectra revealed that substitutional implantation of nitrogen into the TiO₂ lattice added new electronic states just above the valence band which is responsible for the narrowing of band gap resulting in the enhancement in electrical conductivity. This study reports that fabrication of multilayer transparent conducting electrode with nitrogen implantation that exhibits superior electrical and optical properties and hence can be an alternative to indium tin oxide (ITO) for futuristic TCE applications in optoelectronic devices.     

Low temperature atomic layer deposition of SiO2 thin films using di-isopropylaminosilane and ozone

Silicon dioxide (SiO₂) films are deposited by atomic layer deposition (ALD) at low temperatures from 100 to 200 °C using di-isopropylaminosilane (SiH₃N(C₃H₇)₂, DIPAS) as the Si precursor and ozone as the reactant. The SiO₂ films exhibit saturated growth behavior confirming the ALD process, showing a growth rate of 1.2 Å/cycle at 150 °C, which increases to 2.3 Å/cycle at 250 °C. The activation energy of 0.24 eV, extracted from temperature range of 100–200 °C, corresponds to the reported energy barrier for reaction between DIPAS and surface –OH. The temperature dependence of the growth rate can be explained in terms of the coverage and chemical reactivity of the thermally activated precursor on the surface. The ALD-SiO₂ films deposited at 200 °C show properties such as refractive index, density, and roughness comparable to those of conventionally deposited SiO₂, as well as low leakage current and high breakdown field. The fraction of Si–O bond increases at the expense of Si–OH at higher deposition temperature.     

Control of refractive index by annealing to achieve high figure of merit for TiO2/Ag/TiO2 multilayer films

We modified the refractive index (n) of TiO₂ by annealing at various temperatures to obtain a high figure of merit (FOM) for TiO₂/Ag/TiO₂ (45 nm/17 nm/45 nm) multilayer films deposited on glass substrates. Unlike the as-deposited and 300 °C-annealed TiO₂ films, the 600 °C-annealed sample was crystallized in the anatase phase. The as-deposited TiO₂/Ag/as-deposited TiO₂ multilayer film exhibited a transmittance of 94.6% at 550 nm, whereas that of the as-deposited TiO₂/Ag/600 °C-annealed TiO₂ (lower) multilayer film was 96.6%. At 550 nm, n increased from 2.293 to 2.336 with increasing temperature. The carrier concentration, mobility, and sheet resistance varied with increasing annealing temperature. The samples exhibited smooth surfaces with a root-mean-square roughness of 0.37–1.09 nm. The 600 °C-annealed multilayer yielded the highest Haacke's FOM of 193.9×10⁻³ Ω⁻¹.     

Electromagnetic properties of SiO2 reinforced with both multi-wall carbon nanotubes and ZnO particles

SiO₂ reinforced with both multi-wall carbon nanotubes (MWCNTs) and ZnO particles was prepared. Owing to the consumption of an amorphous carbon layer on the outer surface of MWCNTs and the generation of oxygen vacancies in ZnO during sintering, the contact resistance between MWCNTs is lowered and a higher concentration of charge carriers is produced in ZnO. The permittivity of the composite is improved by both changes. The composite containing 15 wt% ZnO particles and 3 wt% MWCNTs exhibits a wider effective absorption bandwidth and lower minimum reflection coefficient than both SiO₂ reinforced with 15 wt% ZnO particles and SiO₂ reinforced with 3 wt% MWCNTs.     

Essential Macleod Program (EMP) simulated fabrication of high quality Zn:SnO2/Ag/Zn:SnO2 multilayer transparent conducting electrode on flexible substrates

In the quest of promising Indium free amorphous transparent conducting oxide (TCO), Zn-doped SnO₂/Ag/Zn-doped SnO₂ (OMO) multilayer films were prepared on flexible polyethylene terephthalate (PET) substrates by RF sputtering at room temperature (RT). Growth parameters were optimized by varying sputtering power and working pressure, to have high electrical conductivity and optical transmittance. Optimization of the thickness of each layer was done by Essential Macleod Program (EMP) simulation to get the higher transmission through OMO multilayer. The sheet resistance and transmittance of 3 at% Zn-doped SnO₂ thin film (30 nm) were 2.23 kΩ/□, (ρ ~ 8.92×10⁻³ Ω∙cm) and 81.3% (at λ ~ 550 nm), respectively. By using optimized thicknesses of Zn-doped SnO₂ (30 nm) and Ag (12 nm) and optimized growth condition Zn-doped SnO₂/Ag/Zn-doped SnO₂ multilayer thin films were deposited. The low sheet resistance of 7.2 Ω/□ and high optical transmittance of 85.1% in the 550 nm wavelength region was achieved with 72 nm multilayer film.     

Synthesis of high-quality AZO polycrystalline films via target bias radio frequency magnetron sputtering

The deposition rate, transmittance and resistivity of aluminium-doped zinc oxide (AZO) films deposited via radio frequency (r.f.) sputtering change with target thickness. An effective method to control and maintain AZO film properties was developed. The strategy only involved the regulation of target bias voltage of r.f. magnetron sputtering system. The target bias voltage considerably influenced AZO film resistivity. The resistivity of the as-deposited AZO film was 9.82×10⁻⁴ Ω cm with power density of 2.19 W/cm² at target self-bias of −72 V. However, it decreased to 5.98×10⁻⁴ Ω cm when the target bias voltage was increased to −112 V by applying d.c. voltage. Both growth rate and optical band gap of AZO film increased with the absolute value of target bias voltage – growth rate increased from 10.54 nm/min to 25.14 nm/min, and band gap increased from 3.57eV to 3.71 eV when target bias voltage increased from −72 V to −112 V at r.f. power density of 2.19 W/cm². The morphology of AZO films was slightly affected by the target bias voltage. Regulating target bias voltage is an effective method to obtain high-quality AZO thin films deposited via r.f. magnetron sputtering. It is also a good choice to maintain the quality of AZO film in uptime manufacturing deposition.     

Thermal properties of single-phase Y2SiO5

Y₂SiO₅ is a promising candidate for oxidation-resistant or environmental/thermal barrier coatings (ETBC) due to its excellent high-temperature stability, low elastic modulus and low oxygen permeability. In this paper, we investigated the thermal properties of Y₂SiO₅ comprehensively, including thermal expansion, thermal diffusivity, heat capacity and thermal conductivity. It is interesting that Y₂SiO₅ has a very low thermal conductivity (～1.40 W/m K) but a relatively high linear thermal expansion coefficient ((8.36 ± 0.5) × 10^?6 K^?1), suggesting compatible thermal and mechanical properties to some non-oxide ceramics and nickel superalloys as ETBC layer. Y₂SiO₅ is also an ideal EBC on YSZ TBC layer due to their close thermal expansion coefficients. As a continuous source of Y³⁺, it is predicted that Y₂SiO₅ EBC may prolong the lifetime of zirconia-based TBC by stopping the degradation aroused by the loss of Y stabilizer.     

Ferroelectric and dielectric properties of manganese-doped Na0.5Bi0.5TiO3 nanocrystalline thin films prepared by metal organic decomposition: A single-layer thickness-dependent study

2 at% Manganese-doped Na_0.5Bi_0.5TiO₃ (NBTMn) thin films with single-layer thicknesses ranging from 15 to 45 nm/l were deposited on the indium tin oxide/glass substrates by a metal organic decomposition process and spin coating technique. The influence of single-layer thickness on the crystal structure, surface morphology, insulating ability, ferroelectric and dielectric properties was mainly investigated. Compared with the other films, NBTMn film with a single-layer thickness of 30 nm/l exhibits the (110)-preferred orientation and dense structure. Also, it shows the enhanced ferroelectricity with a large remanent polarization (P_r) of 38 μC/cm² due to the preferred orientation and low leakage current density. Meanwhile, a high dielectric tunability of 39% for NBTMn with 30 nm/l can be observed by varying the measuring applied voltage and frequency. These results indicate that the suitable layer thickness is beneficial to improve the electrical performances of NBTMn thin film.     

Crystallization kinetics and magnetic properties of iron oxide contained 25Li2O–8MnO2–20CaO–2P2O5–45SiO2 glasses

With crystallization at 850 °C for 4 h, LiMn₂O₄, β-wollastonite (β-CaSiO₃), lithium silicate (Li₂SiO₃), Ca(Ca, Mn)Si₂O₆ and Li₂Ca₄Si₄O₁₃ phases were found in 25Li₂O–8MnO₂–20CaO–2P₂O₅–45SiO₂ (LMCPS) glass ceramics. The (Li, Mn)ferrite phase was obtained in the iron oxide contained LMFCPS glass ceramic and Li₂FeMn₃O₈ phase was found in that containing 8 at.% Fe₂O₃. TEM investigations showed that (Li, Mn)ferrite particles dispersed in the β-wollastonite matrix (Li, Mn)ferrite particles, with an average size of 40 nm, were found in the glass ceramics containing 4 at.% Fe₂O₃. The (Li, Mn)ferrite particle sizes in the glass ceramics containing 8 at.% Fe₂O₃ varied from a few μm to 5 nm. The SQUID result showed that only the glass ceramic containing 4 at.% Fe₂O₃ exhibited super-paramagnetic behavior at temperature 300 K and ferromagnetic behavior at 4 K. The LMCPS glass ceramic containing 8 at.% Fe₂O₃ exhibited ferromagnetic behavior at both temperatures.     

Enhanced ferroelectric properties of La-substituted BiFeO3 thin films on LaSrCoO3/Pt/TiO2/SiO2/Si (1 0 0) substrates prepared by the soft chemical method

Bi_0.85La_0.15FeO₃ (BLFO015) thin films were deposited by the polymeric precursor solution on La_0.5Sr_0.5CoO₃ substrates. For comparison, the films were also deposited on Pt bottom electrode. X-ray diffraction data confirmed the substitutions of La into the Bi site with the elimination of all secondary phases under a substitution ratio x = 15% at a temperature of 500 °C for 2 h. A substantial increase in the remnant polarization (P_r) with La_0.5Sr_0.5CoO₃ bottom electrode (P_r ≈ 34 μC/cm²) after a drive voltage of 9 V was observed when compared with the same film deposited on Pt substrate. The leakage current behavior at room temperature decreased from 10^?8 (Pt) to 10^?10 A/cm² on (La_0.5Sr_0.5CoO₃) electrode under a voltage of 5 V. The fatigue resistance of the Au/BLFO015/LSCO/Pt/TiO₂/SiO₂/Si (1 0 0) capacitors with a thickness of 280 nm exhibited no degradation after 1 × 10⁸ switching cycles at a frequency of 1 MHz.     

Investigation of the structure and activity of VOx/CeO2/SiO2 catalysts for methanol oxidation to formaldehyde

The effect of ceria on the partial oxidation of methanol to formaldehyde over VO_x/CeO₂/SiO₂ catalysts was investigated. A two-dimensional layer of ceria on silica was prepared by grafting cerium (IV) t-butoxide (Ce(OC₄H₉)₄) onto high surface area, mesoporous silica, SBA-15, and then calcining the resulting product in air at 773 K. Ce surface concentrations obtained this way ranged from 0.2 to 0.9 Ce nm^?2. Next, V was introduced by grafting VO(OⁱPr)₃ onto CeO₂/SiO₂ in order to achieve a surface concentration of 0.6 V nm^?2. XANES spectra indicate that all of the V is in the 5+ oxidation state and Raman spectra show that vanadia exist as pseudo-tetrahedra bonded to either silica or ceria. Data from Raman spectroscopy and temperature-programmed desorption of adsorbed methanol indicate that with increasing Ce surface density, most of the V becomes associated with the deposited ceria. The turnover frequency for methanol oxidation is nearly two orders of magnitude higher for VO_x/CeO₂/SiO₂ than for VO_x/SiO₂, whereas the apparent activation energy and apparent first-order pre-exponential factor are 17 kcal/mol and 1.4 × 10⁶ mol CH₂O (mol V atm s)^?1, respectively, for VO_x/CeO₂/SiO₂ and 23 kcal/mol and 2.3 × 10⁷ mol CH₂O (mol V atm s)^?1, respectively, for VO_x/SiO₂.     

Fabrication of transparent SiO2 glass by pressureless sintering and spark plasma sintering

Transparent SiO₂ bodies were prepared by pressureless sintering (PLS) and spark plasma sintering (SPS). The effects of sintering and annealing temperature on the transmittance of the SiO₂ bodies were investigated. The SiO₂ bodies sintered by SPS and PLS at 1073–1573 K were amorphous. With increasing the sintering temperature to 1673 K, the SiO₂ bodies sintered by PLS were crystallized while those sintered by SPS were still amorphous. The relative density of the SiO₂ bodies sintered by SPS was 98.5% at 1373 K and 100% at 1573 K, whereas that sintered by PLS was 92.6% at 1373 K and 98.9% at 1573 K. The transmittance was 91.0% and 81.5% at a wavelength (λ) of 2 μm for the SiO₂ sintered bodies by SPS and PLS, respectively. In the ultraviolet range, the transmittance of the SiO₂ bodies sintered by SPS at 1573 K was about 40% at λ = 200 nm and increased to 75% after annealing at 1073 K for 1 h, which was about three times of the transmittance of the SiO₂ bodies sintered by PLS (24.8%).     

Fine-patterning of sol-gel derived PZT film by a novel lift-off process using solution-processed metal oxide as a sacrificial layer

Sub-5 µm pattern of sol-gel derived lead-zirconium-titanate (PZT) film with a thickness of 80–390 nm was successfully prepared on Pt(111)/TiO_x/SiO₂/Si (100) substrate by a novel lift-off process using solution-processed metal oxides as a sacrificial layer. The process is simply divided into three steps: In-Zn-O (IZO) sacrificial layer spin-coating and patterning, PZT film formation followed by lift-off process. The results suggested that the IZO layer is effective in preventing PZT crystallization because of its thermal stability during PZT post-annealing, and its barrier-effects between the spin-coated PZT precursor and the Pt/TiO_x substrate. Consequently, the micro-pattern of lift-off PZT exhibited better properties than that formed by wet-etching. In particular, the lift-off PZT films possessed better ferroelectric properties, higher break-down voltage, and more well-defined shape than those of films patterned by conventional wet-etching. This lift-off process shows great promise for highly integrated devices due to its fine pattern-ability.