Ammonia-free chemically deposited CdS films as active layers in thin film transistors

In this work we have grown CdS thin films using an ammonia-free chemical bath deposition process for the active layer in thin film transistors. The CdS films were deposited substituting sodium citrate for ammonia as the complexing agent. The electrical characterization of the as-deposited CdS-based thin film transistors shows that the field effect mobility and threshold voltage were in the range of 0.12-0.16 cm²V⁻¹ s⁻¹ and 8.8-25 V, respectively, depending on the channel length. The device performance was improved considerably after thermal annealing in forming gas at 250 °C for 1 h. The mobility of the annealed devices increased to 4.8-8.8 cm²V⁻¹ s⁻¹ and the threshold voltage decreased to 8.4-12 V. I_on/I_off for the annealed devices was approximately 10⁵-10⁶.     

Electrical behavior of p-type PbS-based metal-oxide-semiconductor thin film transistors

Chemically deposited lead sulfide (PbS) thin films were used as the semiconductor active layer in common-gated thin film transistors. The PbS films were deposited at room temperature on SiO₂/Si-p wafers. Lift-off was used to define source and drain contacts (gold, Au) on top of the PbS layer with channel lengths ranging from 10 to 80 μm. The Si-p wafer with a back chromium-gold contact served as the common gate for the transistors. Experimental results show that as-deposited PbS are p-type in character and the devices exhibit typical drain current versus source-drain voltage (I_DS-V_DS) behavior as a function of gate voltage. The values of threshold voltage of the devices were in the range from −7.8 to 1.0 V, depending on the channel length. Channel mobility was approximately 10^− 4 cm²V^− 1 s^− 1. The low channel mobility in the devices is attributed to the influence of the microstructure of the nanocrystalline thin films. The electrical performance of the PbS-based devices was improved by thermal annealing the devices in forming gas at 250 °C. In particular, channel mobility increased and threshold voltage decreased as a consequence of the thermal annealing.     

Improvements in the performances of In–Ga–Zn–O thin-film transistors on glass substrates by annealing treatment

Thin film transistors (TFTs) with amorphous InGaZnO (IGZO) channel layer were fabricated by radio frequency magnetron sputtering technique. The IGZO films show optical transparency over 80 % both before annealing and after annealing. It was found that performances of transistors with IGZO thin films annealed in air at 450 °C were significantly improved. Through annealing treatment, Saturation current of TFTs increased from 2.8 to 181 μA at bias of V_DS = 20, V_GS = 20 V, and saturation mobility is up from 1.49 to 15.8 cm² V^?1 s^?1. In addition, X-ray photoelectric spectroscopy (XPS) was performed to provide elemental information on the surface of the IGZO films before and after annealing. O1s XPS spectra of unannealed and annealed IGZO films indicated oxygen vacancy concentration decreased by annealing treatment.     

Effects of the annealing temperature on the structure and up-conversion photoluminescence of ZnO film

The up-conversion film is being tried to increase the photoelectric conversion efficiency of the silicon solar cell. To improve the efficiency of the photoluminescence film, the effects of the annealing temperature were investigated on the structure and photoluminescence of the ZnO up-conversion film, which was prepared using the sol-gel method and the spin-coating technique. The results show that the organic compounds and water in the ZnO film were completely eliminated when the annealing temperature reached 500?°C. The crystallinity of film is improved and the average grain size continuously increases as increasing the annealing temperature. The transmittance in the wavelength range of 400–2000?nm continuously increases as the annealing temperature increases from 500?°C to 700?°C, whilst it decreases first and then increases as the annealing temperature increases from 800?°C to 1000?°C. When the film is excited with a laser of 980?nm, there are two intense emission bands in the up-conversion emission spectra, 542-nm green light and 660-nm red light, corresponding to Ho³⁺: ⁵S₂/⁵F₄?→?⁵I₈?and ⁵F₅?→?⁵I₈ transitions, respectively. In addition, the intensity of up-conversion luminescence for the film increases first and then decreases with the increase of the annealing temperature. When the annealing temperature is at 900?°C, the film consists of small round compact particles with a high degree of crystallization, reaching maximum up-conversion intensity of the film.     

a-Si:H/CuInS2 heterojunctions for photovoltaic conversion

Heterojunctions of hydrogenated a-Si films prepared by r.f. sputtering with spraypyrolyzed CuInS₂ films have been studied. Capacitance-voltage measurements establish the formation of abrupt heterojunction. The barrier height varies from 0·26 to 0·55 V as the resistivity of CuInS₂ film decrease from 1·5 × 10³ to 65 Θm. These junctions exhibit photovoltaic behaviour withV _oc = 220 mV andI _sc = 0·20 mA/cm².     

Preparation and electrochemical properties of SrCe 0·4 Zr 0·4 Yb 0·2 O 2·9 electrolyte

The perovskite Yb-doped strontium cerate–zirconate material, SrCe_0·4Zr_0·4Yb_0·2O_2·9, was prepared by solid-state reaction and the structure was characterized by X-ray diffraction. The calcination process of the powder was investigated by thermogravimetric/differential thermal analysis (TG–DTA). The high temperature conductivities were measured by d.c. four-probe technique in the temperature range from 500 to 950°C in wet hydrogen and effect of temperature on conductivity was investigated. The conductivity increased with the elevation of temperature from 500 to 950°C. The highest conductivity of 4·4 × 10^???2 S· cm^???1 was observed for SrCe_0·4Zr_0·4Yb_0·2O_2·9 at 950°C. The current–voltage (I–V) and current–power (I–P) characteristics of the single cell (H₂, Pt/SrCe_0·4Zr_0·4Yb_0·2O_2·9/Pt, O₂) at temperature range from 600 to 850°C were tested. With the temperature increasing from 600 to 850°C, the open circuit voltage (OCV) decreased from 1·164 to 1·073 V and the ionic transfer number decreased from 0·996 to 0·946. At 850°C, the maximum power density of 25·2 mW· cm^???2 was observed.     

Behavior of alkali element uranosilicates and uranogermanates in saturated aqueous solutions

The behavior of uranosilicates and uranogermanates of the series A^IHB^IVUO₆·nH₂O (A^I = Li, Na, K, Rb, Cs, NH₄; B^IV = Si, Ge) in aqueous solutions at pH from 0 to 14 was studied. The acid-base intervals of the existence of these compounds were determined, their conversion products were identified, and the solubility of A^IHB^IVUO₆·nH₂O was measured. The physicochemical analysis of the heterogeneous systems A^IHB^IVUO₆·nH₂O-aqueous solution was performed. The equilibrium constants of the dissolution reactions and the Gibbs functions of formation of A^IHB^IVUO₆·nH₂O were calculated. The solubility curves and the speciation diagrams of U(VI) and element B^IV in aqueous solutions and of the equilibrium solid phases were constructed.     

Mechanical properties and thermal stability of nitrogen incorporated diamond-like carbon films

The nitrogen incorporated diamond-like carbon films were deposited on Si (100) substrates by arc ion plating (AIP) under different N₂ content in the gas mixture of Ar and N₂. The influence of N₂ content on the film microstructure and mechanical properties was studied by atomic force microscopy, transmission electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and nanoindentation. It was found that the hardness (H), elastic modulus (E), elastic recovery (R) and plastic resistance parameter (H/E) decrease with increasing the nitrogen content. The decrease of mechanical properties of DLC films resulted from nitrogen incorporation was associated with total sp³ carbon bond content and N-sp³C bond content. The structural modification as well as mechanical properties of the annealed nitrogen incorporated diamond-like carbon films was investigated as a function of annealing temperature. Raman spectra indicate that the I_D/I_G ratio starts to increase and G peak position shifts upward at the annealing temperature over 500 °C. The hardness and elastic modulus of thermally annealed nitrogen incorporated DLC films decreased slightly at lower annealing temperature and then significantly decreased at higher annealing temperature. The strong covalent bonding between C and N atoms is expected to be effective on their thermal stability enhancement.     

YBa2SnO5·5, a novel ceramic substrate for YBCO and BiSCCO superconductors

YBa₂SnO_5·5 has been synthesized and sintered as single phase material for its use as substrate for both YBCO and BiSCCO superconductors. YBa₂SnO_5·5 has a complex cubic perovskite (A₂BB’O₆) structure with the lattice constanta = 8·430 Å. The dielectric constant and loss factor of YBa₂SnO_5·5 are in a range suitable for its use as substrate for microwave applications. YBa₂SnO_5·5 is found to be chemically compatible with both YBCO and BiSCCO superconductors. The thick film of YBCO screen printed on polycrystalline YBa₂SnO_5·5 substrate gave aT _c(0) of 92 K and a critical current density (J _c) of 4 × 10⁴ A/cm² at 77 K. A screen printed BiSCCO thick film on YBa₂SnO_5·5 substrate gaveT _c(0) = 110 K and current density 3 × 10³ A/cm² at 77 K.     

Compositional, structural and electronic characteristics of HfO2 and HfSiO dielectrics prepared by radio frequency magnetron sputtering

HfO₂ and HfSiO films were prepared on Si substrates by using radio frequency magnetron sputtering (RFMS). Compositional, structural and electronic properties of the two films were investigated completely. X-ray photoelectron spectroscopy (XPS) spectra showed that the atom ratio of Hf to O was about 1:2 in the HfO₂ film and the chemical composition of the HfSiO film was Hf₃₇Si₇O₅₆. Grazing incidence X-ray diffraction (GI-XRD) patterns indicated crystallization in the HfO₂ film after 400 °C annealing, but there is no detectable crystallization in the HfSiO film after 800 °C annealing. C-V measurements indicated that the dielectric constants for the HfO₂ and HfSiO film were 20.3 and 17.3, respectively. The fixed charge densities were found to be 6.0 × 10¹² cm⁻² for the HfO₂ film and 3.7 × 10¹² cm⁻² for the HfSiO film. I-V characteristics showed that the average leakage current densities were 2.4 μA/cm² for the HfO₂ film and 0.2 μA/cm² for the HfSiO film at the gate bias of 1 V.     

Frequency up-conversion luminescence in Yb3+–Ho3+ co-doped PbxCd1−xF2 nano-crystals precipitated transparent oxyfluoride glass-ceramics

Oxyfluoride glasses were developed with composition 30SiO₂·15AlO_1.5·28PbF₂·22CdF₂·(4.9−x)GdF₃·0.1HoF₃·xYbF₃ (x=0, 0.1, 0.2, 0.5, 1, 2, 3, and 4) in mol%. Powder X-ray diffraction analysis revealed that the heat-treatments of the oxyfluoride glasses at the first crystallization temperature cause the precipitation of Yb³⁺–Ho³⁺ co-doped fluorite-type nano-crystals of about 17.8 nm in diameter in the glass matrix. These transparent glass-ceramics exhibited very strong green up-conversion luminescence due to the Ho³⁺: (⁵F₄, ⁵S₂)→⁵I₈ transition under 980 nm excitation. The intensity of the green up-conversion luminescence in the glass-ceramics was much stronger than that in the precursor oxyfluoride glass. The reasons for the highly efficient Ho³⁺ up-conversion luminescence in the oxyfluoride glass-ceramics are discussed.     

Structural and ferroelectric properties of La modified Sr0.8Bi2.2Ta2O9 thin films

La modified SBT (Sr_0.8La_0.1Bi_2.1Ta₂O₉) thin films of different thickness were fabricated on Pt/Ti/SiO₂/Si substrates by the metalorganic decomposition technique. All the films were annealed layer-by-layer at 800 °C using a rapid thermal annealing furnace. X-ray diffraction analysis indicated that the relative intensity of the (2 0 0) diffraction peak [I(2 0 0)/I(1 1 5)] increased with the increase of the film thickness. Eventually, an a-axis preferentially oriented SLBT film was obtained. These results are discussed with respect to the anisotropy of the grain growth. The a-axis preferentially oriented SLBT film, whose relative intensity of the (2 0 0) peak [I(2 0 0)/I(1 1 5)] was 1.05, had a remanent polarization (2P_r) value of 21 μC/cm² and a coercive field (2E_c) value of 70 kV/cm under the electric field of 200 kV/cm.     

Diluting and annealing effects on electromigration and morphology of chemical vapor-deposited copper films

The crystallization and orientation of chemical vapor-deposited copper films were investigated by means of X-ray diffraction. The ratios of Cu (1 1 1) peak intensity to Cu (2 0 0) [I(1 1 1)/I(2 0 0)] of the film deposited at different temperatures were plotted as a function of temperature. Then it can be found that the ratio of I(1 1 1)/I(2 0 0) increased with the deposition temperature, and 400 °C is the best one for electromigration when the films are grown in diluting N₂, and/or annealing by N₂ or by H₂. In addition, the morphology of copper films was characterized by atomic force microscopy, and it was found that the smoothness of the films grown in diluting N₂ and/or annealing by N₂ are improved, while the films annealing by H₂ have no significant changes.     

DLTS study of annihilation of oxidation induced deep-level defects in Ni/SiO2/n-Si MOS structures

This paper describes the fabrication of MOS capacitor and DLTS study of annihilation of deeplevel defects upon thermal annealing. Ni/SiO₂/n-Si MOS structures fabricated on n-type Si wafers were investigated for process-induced deep-level defects. The deep-level traps in Si substrates induced during the processing of Ni/SiO₂/n-Si have been investigated using deep-level transient spectroscopy (DLTS). A characteristic deep-level defect at E _C = 0·49 eV which was introduced during high-temperature thermal oxidation process was detected. The trap position was found to shift to different energy levels (E _C = 0·43, 0·46 and 0·34 eV) during thermal annealing process. The deep-level trap completely anneals at 350°C. Significant reduction in trap density with an increase in recombination life time and substrate doping concentration as a function of isochronal annealing were observed.     

Fabrication of ZnO thin film diode using laser annealing

A p-n homojunction was obtained by Nd:YAG laser annealing of Zn₃P₂/n-ZnO thin film. The deposition process of ZnO and Zn₃P₂ thin film was performed by pulsed laser deposition (PLD). A p-n junction was formed by Nd:YAG laser annealing of Zn₃P₂/n-ZnO thin film and showed typical I-V characteristics of a diode. Laser annealing could be a useful technique for the fabrication of an ultraviolet light-emitting diode or an ultraviolet laser diode.     

Sol-gel preparation of near-infrared broadband emitting Er-doped SiO2-Ta2O5 nanocomposite films

This article reports a study on the preparation, densification process, and structural and optical properties of SiO₂-Ta₂O₅ nanocomposite films obtained by the sol-gel process. The films were doped with Er³⁺, and the Si:Ta molar ratio was 90:10. Values of refractive index, thickness and vibrational modes in terms of the number of layers and thermal annealing time are described for the films. The densification process is accompanied by OH group elimination, increase in the refractive index, and changes in film thickness. Full densification of the film is acquired after 90 min of annealing at 900 °C. The onset of crystallization and devitrification, with the growth of Ta₂O₅ nanocrystals occurs with film densification, evidenced by high-resolution transmission electron microscopy. The Er³⁺-doped nanocomposite annealed at 900 °C consists of Ta₂O₅ nanoparticles, with sizes around 2 nm, dispersed in the SiO₂ amorphous phase. The main emission peak of the film is detected at around 1532 nm, which can be assigned to the ⁴I_13/2 → ⁴I_15/2 transition of the Er³⁺ ions present in the nanocomposites. This band has a full width at half medium of 64 nm, and the lifetime measured for the ⁴I_13/2 levels is 5.4 ms, which is broader compared to those of other silicate systems. In conclusion, the films obtained in this work are excellent candidates for use as active planar waveguide.     

Iron-substituted AB5-type MH electrode

The present investigation is aimed to study MmNi₅-type (Mm = Mischmetal) hydrogen storage alloys with composition, Mm_0·8La_0·2Ni_3·7Al_0·38Co_0·3Mn_0·6?x Mo_0·02Fe _x (x = 0, 0·1, 0·2 and 0·3). The alloys are synthesized by radio-frequency induction melting. To study their electrochemical properties via measurements of discharge capacity, activation process, rate capability and cyclic stability, electrodes are fabricated using as-synthesized and annealed version of the alloys. The maximum discharge capacity is recorded as 288 mAhg^?1 for the iron concentration, x = 0·1, as compared to 270 mAhg^?1 for the alloy electrode without iron. Similarly, 99% cyclic stability is observed in annealed alloy electrode (x = 0·1) as compared to 78% in the alloy electrode without iron. Hence, small amount of iron-substitution (x = 0·1) in the alloy is found to improve the electrochemical properties. This improvement is thought to be due to less pulverization of the alloy in electrochemically-cycled alloy, as confirmed through structural and microstructural characterizations carried out by X-ray diffraction phase analysis and scanning electron microscopy of as-fabricated and electrochemically-cycled electrodes.     

Er related 1.53 μm emission from Er-Si-codoped ZnO multilayer film prepared by rf-sputtering

The near-infrared emission from Er and Si codoped ZnO film, synthesized by cosputtering from separated Er, Si, and ZnO targets, has been investigated. By building the multilayer film structure, controlling the Er concentration, and optimizing the annealing condition, the intensity of Er³⁺ related 1.53 μm photoluminescence (PL), which originates from the transition of Er³⁺: ⁴I_13/2 → ⁴I_15/2, can be modulated. It is shown that the maximum intensities of Er³⁺ related 1.53 μm PL are obtained when the Si:ZnO/Er:Si:ZnO/Si:ZnO sandwiched multilayer film and the alternate Er:ZnO/Si:ZnO multilayer film were annealed at 1000 °C and 950 °C, respectively. The Er³⁺ related 1.54 μm PL intensity of the multilayer film is higher than that of the Er:ZnO monolayer film. This can be attributed to the presence of the silicon nanocrystals that could act as sensitizers of Er³⁺ ions in the multilayer film. The PL of the sandwiched multilayer film and the alternate multilayer film were measured under different temperatures (15-300 K). The sandwiched multilayer film exhibits a nonmonotonic temperature dependence as well as the alternate multilayer film, which differs from that of Er-doped ZnO as previously reported.     

Characteristics of bottom-gate low temperature nanocrystalline silicon thin film transistor fabricated by hydrogen annealing of gate dielectric layer

Thin film transistors having nanocrystalline silicon as an active layer were fabricated by catalytic-CVD at a low process temperature (≤ 200 °C). The tri-layer of the bottom-gate TFT was deposited continuously inside the Cat-CVD reactor. In order to improve the quality of the gate dielectric layer an in-situ hydrogen annealing step was introduced in between the silicon nitride and the nanocrystalline silicon deposition steps. The in-situ hydrogen annealing was effective in reducing the hysteresis in the C-V characteristics and in enhancing the breakdown voltage by decreasing the defects inside the SiN_x film.     

X-ray crystallographic and conductance study of CuNiSnO4 synthesized by two different methods

Two new ternary oxidic compositions of CuNiSnO₄ have been prepared. The ternary composition Cu²⁺Ni²⁺SnO₄ in orthorhombic symmetry with lattice dimensionsa ₀=5·773 ± 0·01 Å;b ₀=8·377 ± 0·01 Å;c ₀=10·094 ± 0·01 Å, while Cu⁺Ni³⁺SnO₄ is also orthorhombic but with lattice dimensionsa ₀=5·737 ± 0·01 Å;b ₀=7·125 ± 0·01 Å andc ₀=10·071 ± 0·01 Å. The variation of electrical conductance with temperature indicates the semiconducting nature of these compositions. Hot-probe method indicatesp-type semiconduction in both the compositions