Domain engineering enhanced microwave tunability in nonstoichiometric Ba0.8Sr0.2TiO3

Domain engineering via oxygen vacancy, , loading achieved by A/B modification as well as quenching treatment, was utilized for Ba_0.8Sr_0.2TiO₃ (0.8 BSTs) in an attempt to enhance the microwave tunable characteristics. For similar grain sizes, the domain sizes were notably reduced for all nonstoichiometric BSTs, indicating that the loaded (as a consequence of Ti defects, ) played a role in the nuclei for new domain walls. The tunability T at 100 MHz under a direct current field of 30 V/20 μm increased steadily as the domain size (d.s.) declined for all BSTs, regardless of the A/B ratio, due to the d.s. effect. The tunable characteristics in nonstoichiometric BSTs having a similar d.s. of ?190 nm were then compared. The tunability and tan δ decreased for A/B = 1.002 (0.2 mol% Ti defects). The introduced formed pinning centers that restricted domain wall motion, leading directly to lower tunability and smaller dielectric loss. However, ‐overloaded samples (i.e., A/B ≥ 1.005) exhibited increased values for tan δ due to conduction in the domains. The quench treatment of 0.8 BST (with A/B = 1.002) samples resulted in a d.s. reduction from 191 to 170 nm. These quenched specimens showed greater tunability, T_total, originating from the strengthened dipole contribution, T_dipole, as a consequence of the d.s. effect. The tan δ of the quenched specimens was essentially unchanged, indicating a homogenous distribution via the quench, effectively reducing the mobile (which contributes to electrical conduction) in the domains. Consequently, the achieved figure of merit via domain engineering was 2.25 at 100 MHz for the quenched BST with A/B = 1.002, which was 1.54 times larger than that of unmodified BST.     

Effects of temperature and electric field on upconversion luminescence in Er3+‐Yb3+ codoped Ba0.8Sr0.2TiO3 ferroelectric ceramics

Optical and electrical properties of 1%Er³⁺ and different Yb³⁺ content (1ExY) codoped Ba_0.8Sr_0.2TiO₃ (BST) ferroelectric ceramics fabricated by the solid‐phase reaction were investigated. Under 980 nm pump condition, two green emission bands at 525 and 549 nm wavelength corresponding to, ²H_11/2→⁴I_15/2 and ²S_3/2→⁴I_15/2 transitions, and two red emission bands at 655 and 668 nm wavelength attributed to ⁴F_9/2→⁴I_15/2 transition are observed. The temperature‐sensing behaviors, calculated by the intensity ratio I₅₂₅/I₅₄₉ suggested that, the maximum sensitivity of the green emission of the 1E8Y‐BST ceramics is 1.07×10^?2 K‐1 at 293 K. Furthermore, the maximum sensitivity of 1E6Y‐BST and 1E11Y‐BST ceramics were obtained around the Curie temperature. The fluorescence lifetime of 1E8Y‐BST ceramics for ²H_11/2 level and ²S_3/2 level shortened with the increase in the temperatures. Moreover, the upconversion (UC) luminescence intensity of 1E8Y‐BST decreased with the increase in the external electric field and had a mutation at the coercive electric field (E_c) of about 1.24 kV/cm, which revealed that the electric field had influence on the UC luminescence.     

Mn doping effects on electric properties of 0.93(Bi0.5Na0.5)TiO3‐0.07Ba(Ti0.945Zr0.055)O3 ceramics

The validity of Mn element on 0.93(Bi_0.5Na_0.5)TiO₃‐0.07Ba(Ti_0.945Zr_0.055)O₃ ceramics (BNT‐BZT‐xMn) is certified by doping. On account of multiple effects introduced by Mn, the appropriate Mn content facilitates property improvement effectively. Compared with pure BNT‐BZT, d₃₃ of the component x = 0.25 increases about 8% up to 187 pC/N and Q_m of the component x = 1 increases about 84% up to 197. Thermally stimulated depolarization currents (TSDC) measurement reveals Mn additive is helpful to pyroelectric properties as well. The Mn‐doped component x = 0.125 exhibits better pyroelectric performance at room temperature. Corresponding pyroelectric coefficient and the figures of merit reach up to 0.061 μC/(cm² °C), F_i=217 pm/V, F_ν = 0.023 m²/C, and F_d = 12.6 μPa^?1/2, respectively, even superior to lead‐based ceramics. Similar pyroelectric advantage is also observed in the component x = 0.5 near depolarization temperature T_d. Mn doping has slight harmful influence on the ferroelectric‐to‐relaxor transition temperature T_F?R, as well as T_d, but hardly shows restriction on application. These results confirm Mn doping is an available strategy to improve BNT‐based ceramics. Therefore, Mn‐doped BNT‐BZT ceramics will be excellent candidates in area of high‐power piezoelectric application and pyroelectric detectors.     

Polarization behavior of sol‐gel‐derived relaxor Ba(Zr,Ti)O3 films

Films of the relaxor ferroelectric BaZr_0.25Ti_0.75O₃ (0.25‐BZT) were synthesized via a sol‐gel route to investigate the effect of film thickness on the dielectric properties and for comparison with normal ferroelectric BaTiO₃ (BT). The as‐prepared films on Nb‐doped SrTiO₃ (Nb–ST) displayed a (100) orientation; thinner films had stronger (100) orientations. Microwave dielectric measurements up to a few GHz quantified the polarizations, that is, the dipole contribution, ε_dipole, the combination of the ionic and electronic polarizations, ε_ionic+el., and the total contribution, ε_total. The ε_dipole in the relaxors at a film thickness of t=630 nm was 360, which was double that for the normal ferroelectric BT (ε_dipole=180) at t=735 nm. The larger apparent permittivity of the BZT therefore originated from the larger ε_dipole of the polar nanoregions (PNRs), while the nanograins of BT with few domain walls led to a comparably smaller ε_dipole. The volume ratio of the surface and film‐substrate interface lacking the dipole interactions increased with the reduction in the film thickness, leading to the significant depression in the permittivity for both specimens. The difference in the thickness dependence of the dielectric properties of the sol‐gel derived relaxor BZT and the normal ferroelectric BT films was attributed to the different origins of their dipole contribution, that is, the PNRs and ferroelectric domains, respectively.     

Investigation of MnO2‐doped (Ba,Ca)TiO3 lead‐free ceramics for high power piezoelectric applications

x% mol MnO₂‐doped Ba_0.925Ca_0.075TiO₃ ceramics (abbreviated as BCT‐Mnx, x=0‐1.5) were synthesized by conventional solid‐state reaction method. The effects of MnO₂ addition and (Ba+Ca)/Ti mole ratio (A/B ratio) on the microstructure and electrical properties of the ceramics were investigated. The internal bias filed E_i was determined from the asymmetrical polarization hysteresis loops and found to increase with the doping concentration of MnO₂. High mechanical quality factors (Q_m>1200) and low dielectric loss (tanδ<0.5%) were found in the BCT‐Mn0.75 and BCT‐Mn1.0 ceramics with E_i>3 kV/cm, meanwhile, the piezoelectric and electromechanical properties were found to decrease compared with the pure BCT, exhibiting a typical characteristic of “hard” behavior. Of particular interest is that the microstructure of BCT‐Mn0.75 ceramics could be controlled by changing the A/B ratio, where enhanced piezoelectric coefficient d₃₃ on the order of 190 pC/N was obtained in the BCT‐Mn0.75 ceramics with A/B=1.01 due to its fine‐grained microstructure, with yet high Q_m, being on the order of 1000. The high d₃₃ and Q_m in MnO₂‐doped BCT ceramics make it a promising candidate for high power piezoelectric applications.     

Electrocaloric Effect in Ba(Zr,Ti)O3–(Ba,Ca)TiO3 Ceramics Measured Directly

In this paper, we report on studies of the electrocaloric (EC) effect in lead‐free (1?x)Ba(Zr_0.2Ti_0.8)O₃–x(Ba_0.7Ca_0.3)TiO₃ ceramics with compositions range between 0.32 ≤ x ≤ 0.45. The EC effect was measured directly using a modified differential scanning calorimeter. The maximum EC temperature change, ΔT_direct = 0.33 K under an electric field of 2 kV/mm, was observed for the composition with x = 0.32 at ~63°C. We found that the EC effect peaks not only around the Curie temperature but also at the transition between the ferroelectric phases with different symmetries. A strong discrepancy observed between the results of the direct measurements and indirect estimations points out that using Maxwell's equations is invalid for the thermodynamic nonequilibrium conditions that accompany only partial (incomplete) poling of ceramics. We also observe a nonlinearity of the EC effect above the Curie temperature and in the temperature range corresponding to the tetragonal ferroelectric phase.     

Implementation of Ba0.6Sr0.4TiO3‐ZnO‐B2O3 based tunable microwave phase shifters in LTCC technology

Tunable dielectric Ba_0.6Sr_0.4TiO₃‐ZnO‐B₂O₃ thick‐films were analyzed regarding their integration potential into the LTCC technology. Therefore, tunable loaded line phase shifters based on metal‐insulator‐metal varactors with single‐ and double‐printed BST thick‐films were fabricated and co‐sintered inside a four layer LTCC module. Microstructural and chemical investigations showed a sufficient compatibility and adhesion between the silver, BST composite and LTCC layers and a resulting morphology depending on the processing route. The microwave characterization of the LTCC‐embedded phase shifters revealed comparable results to phase shifters with the same design on alumina substrates.     

Electric‐field induced phase transition and fatigue behaviors of (Bi0.5+x/2Na0.5‐x/2)0.94Ba0.06Ti1‐xFexO3 ferroelectrics

The dielectric, piezoelectric properties, and fatigue behaviors of stoichiometric (Bi_0.5+x/2Na_0.5‐x/2)_0.94Ba_0.06Ti_1‐xFe_xO₃ (BNBT‐xFe) ferroelectrics are investigated. Fe substitution leads to the downward shift of the ferroelectric‐relaxor transition temperature (T_F‐R) and increase in strain. Meanwhile, fatigue behaviors of the modified ceramics are significantly enhanced. Ex situ X‐ray diffraction and transmission electron microscopy reveal microscopic mechanism for polarization fatigue on different compositions. The fatigue‐free behavior of ferroelectric BNBT‐0.03Fe is not only attributed to a mechanism involving the formation of defect dipoles, which reduces the pinning effect of migratory oxygen vacancies on domain walls, but is also connected to the decrease in easily suppressed field‐induced ferroelectric tetragonal phase. While for ergodic relaxor BNBT‐0.09Fe, the absence of domain wall contributes to the good fatigue resistance behavior. Interestingly, electric cycling results in an increased fraction of relaxor phase, accompanying by the increase in the total strain and decrease in remnant polarizations.     

Enhanced pyroelectric properties in (Bi0.5Na0.5)TiO3–BiAlO3–NaNbO3 ternary system lead‐free ceramics

High pyroelectric performance and good thermal stability of pyroelectric materials are desirable for the application of infrared thermal detectors. In this work, enhanced pyroelectric properties were achieved in a new ternary (1?x)(0.98(Bi_0.5Na_0.5)(Ti_0.995Mn_0.005)O₃–0.02BiAlO₃)–xNaNbO₃ (BNT–BA–xNN) lead‐free ceramics. The effect of NN addition on the microstructure, phase transition, ferroelectric, and pyroelectric properties of BNT–BA–xNN ceramics were investigated. It was found that the average grain size decreased as x increased to 0.03, whereas increased with further NN addition. The pyroelectric coefficient p at room temperature (RT) was significantly increased from 3.87 × 10^?8Ccm^?2K^?1 at x = 0 to 8.45 × 10^?8Ccm^?2K^?1 at x = 0.03. The figures of merit (FOMs), F_i, F_v and F_d, were also enhanced with addition of NN. Because of high p (7.48 × 10^?8Ccm^?2K^?1) as well as relatively low dielectric permittivity (~370) and low dielectric loss (~0.011), the optimal FOMs at RT were obtained at x = 0.02 with F_i = 2.66 × 10^?10 m/V, F_v = 8.07 × 10^?2 m²/C, and F_d = 4.22 × 10^?5 Pa^?1/2, which are superior to other reported lead‐free ceramics. Furthermore, the compositions with x ≤ 0.03 exhibited excellent temperature stability in a wide temperature range from 20 to 80°C because of high depolarization temperature (≥110°C). Those results unveil the potential of BNT–BA–xNN ceramics for infrared detector applications.     

Enhanced ferroelectric properties and thermal stability of Mn‐doped 0.96(Bi0.5 Na0.5)TiO3‐0.04BiAlO3 ceramics

(Bi_0.5Na_0.5)TiO₃–BiAlO₃ lead‐free materials exhibit excellent ferroelectric properties, but its depolarization temperature is relatively low which is the major obstacle limiting the material's practical application. In this study, the effects of Manganese (Mn) modification on the microstructure, ferroelectric properties and depolarization behavior of 0.96(Bi_0.5Na_0.5)(Ti_1?xMn_x)O₃–0.04BiAlO₃ ceramics were investigated. It was found that the average grain size was enlarged and ferroelectric properties were enhanced with small Mn addition, meanwhile the tangent loss decreased. The remnant polarization (P_r) of the samples reached an optimal value (~41 μC/cm²) as Mn content increased up to 0.7 mol%, whereas further addition resulted in the decrease in P_r. Moreover, appropriate Mn addition (x=0.7%) can improve the depolarization temperature from 140°C to 161°C determined from thermally stimulated depolarization currents measurement.     

High permittivity (1−x)Bi1/2Na1/2TiO3‐xPbMg1/3Nb2/3O3 ceramics for high‐temperature‐stable capacitors

(1?x)Bi_1/2Na_1/2TiO₃‐xPbMg_1/3Nb_2/3O₃[(1?x)BNT‐xPMN] ceramics have been fabricated via a conventional solid‐state method for compositions x ≤ 0.3. The microstructure, phase structure, ferroelectric, and dielectric properties of ceramics were systematically studied as high‐temperature capacitor materials. XRD pattern certified perovskite phase with no secondary phase in all compositions. As PMN concentration increased, the phase of (1?x)BNT‐xPMN ceramics transformed from ferroelectric to relaxor gradually at room temperature, with prominent enhancement of dielectric temperature stability. For the composition x = 0.2, the temperature coefficient of capacitance (TCC) was <15% in a wide temperature range from 56 to 350°C with high relative permittivity (>3300) and low dielectric loss (<0.02) at 150°C, which indicated promising future for (1?x)BNT‐xPMN system as high‐temperature stable capacitor materials.     

Effect of sintering temperature on the depolarization behavior of (Bi0.5Na0.5)TiO3-based ceramics

(Bi_0.5Na_0.5)TiO₃ (BNT)-based ferroelectric ceramics have drawn extensive attention because of their excellent electrical properties and interesting depolarization behavior. However, the poor thermal stability of electrical properties limits their practical application. In this work, the effect of sintering temperature (T_s) on the depolarization behavior of BNT-based ceramics was systematically investigated. It is found that the depolarization temperature T_d determined from pyroelectric measurement tends to decrease with increasing T_s, which indicates that lower T_s defers the ferroelectric-relaxor (FE-RE) phase transition. However, for the samples sintered at higher T_s (such as 1180°C), although the T_d is reduced, the thermal stability is better compared with the sample sintered at lower T_s (1100°C) because the diffuse behavior of the FE-RE phase transition is suppressed. According to these results, we propose that the thermal stability of electrical properties for BNT-based ceramics is not only related to high T_d, but also to the diffuse degree of phase transition.     

Enhanced electrical properties and strong red light‐emitting in Eu3+‐doped Sr1.90Ca0.15Na0.9Nb5O15 ceramics

The luminescent‐ferroelectic materials based on Sr_1.90Ca_0.15Na_0.9Nb₅O₁₅ (SCNN) matrix doping with Eu³⁺ were synthesized by the conventional solid‐state reaction method. The crystal structure, photoluminescence, thermal stability, dielectric, ferroelectric, and piezoelectric behaviors were systematically investigated. XRD results revealed that Eu³⁺ introduction could induce the tungsten bronze phase transition from orthorhombic to tetragonal structures. The dielectric spectra of all specimens showed two broad dielectric anomalies: a high‐temperature ferroelectric phase transition (T_c) and a low‐temperature ferroelastic phase transition (T_s), both of which were suppressed at higher Eu³⁺ concentrations. The enhanced electrical properties were obtained in a proper Eu³⁺ concentration range of 0.03‐0.05. For all SCNN:xEu³⁺ samples, the strong red emission peak at 617 nm originating from the electric dipole transition of ⁵D₀ →⁷F₂ was excited by different light excitations of 395 or 463 nm. Our results demonstrated that Eu³⁺‐doped SCNN materials might have promising potential in advanced multifunctional optoelectronic applications.     

Effect of grain size on the energy storage properties of (Ba0.4Sr0.6)TiO3 paraelectric ceramics

(Ba_0.4Sr_0.6)TiO₃ (BST) ceramics with various grain sizes (0.5–5.6 μm) were prepared by conventional solid state reaction methods. The effect of grain size on the energy storage properties of BST ceramics (T_c ≈ −65 °C) was investigated. With decreasing grain sizes, a clear tendency toward the diffuse phase transition was observed and the dielectric nonlinearity was reduced gradually, which can be explained by the Devonshire's phenomenological theory (from the viewpoint of intrinsic polarization). Based on the multi-polarization mechanism model, the relationship between the polarization behavior of polar nano-regions (the extrinsic nonlinear polarization mechanisms) and grain size was studied. The variation of the grain boundary density was thought to play an important role on the improvement of dielectric breakdown strength, account for the enhanced energy density, which was confirmed by the complex impedance spectroscopy analysis based on a double-layered dielectric model.     

Dielectric relaxation and electrical conduction in (BixNa1−x)0.94Ba0.06TiO3 ceramics

The dielectric relaxation and electrical conduction were investigated in (Bi_xNa_1?x)_0.94Ba_0.06TiO₃ (Abb. xBNBT6, x = 0.5, 0.495, 0.485, and 0.475) ceramics prepared by solid state reaction. With a decrease in x, the dielectric properties of the ceramics decreased, whereas the electrical conduction increased, resulting in a transition from insulator to oxide‐ions conductor. When x = 0.475, the ceramics exhibited large conductivity (~10^?3 S cm^?1 at 575°C) and low activation energy (~0.45 eV), indicating their potential application in solid oxide fuel cells. A mixed conduction mechanism with oxide‐ions, electrons, and holes was proposed. With a decrease in x from 0.495 to 0.475, it was found that the p‐type conduction was switched to n‐type conduction. The dielectric relaxation of the x = 0.495 sample was associated with short‐range hopping of oxygen vacancies. However, the dielectric properties of the x = 0.485 and 0.475 samples can be explained by Maxwell‐Wagner interface relaxation.     

Colossal dielectric permittivity in (Al+Nb) co-doped Ba0.4Sr0.6TiO3 ceramics

Stimulated by the outstanding colossal permittivity behavior achieved in trivalent and pentavalent cations co-doped rutile TiO₂ ceramics, the co-doping effects on the dielectric behavior of Ba_0.4Sr_0.6TiO₃ ceramics were further explored. In this work, (Al + Nb) co-doped Ba_0.4Sr_0.6TiO₃ ceramics were synthesized via a standard solid state ceramic route. The structural evolution was analyzed using X-ray diffraction patterns and Raman spectra. Dense microstructures with no apparent change of grain morphology were observed from the scanning electron microscopy. A huge enhancement of dielectric permittivity was obtained with 1 mol% (Al + Nb) doping and excellent dielectric performances (ε_r ∼ 20,000, tanδ ∼ 0.06 at 1 kHz) were achieved after further heat treatment. The formation of electron pinned defect dipoles localized in grains may account for the optimization of dielectric behaviors and the corresponding chemical valence states were confirmed from the XPS results.     

High strain (0.4%) Bi(Mg2/3Nb1/3)O3‐BaTiO3‐BiFeO3 lead‐free piezoelectric ceramics and multilayers

The relationship between the piezoelectric properties and the structure/microstructure for 0.05Bi(Mg_2/3Nb_1/3)O₃‐(0.95‐x)BaTiO₃‐xBiFeO₃ (BBFT, x = 0.55, 0.60, 0.63, 0.65, 0.70, and 0.75) ceramics has been investigated. Scanning electron microscopy revealed a homogeneous microstructure for x < 0.75 but there was evidence of a core‐shell cation distribution for x = 0.75 which could be suppressed in part through quenching from the sintering temperature. X‐ray diffraction (XRD) suggested a gradual structural transition from pseudocubic to rhombohedral for 0.63 < x < 0.70, characterized by the coexistence of phases. The temperature dependence of relative permittivity, polarization‐electric field hysteresis loops, bipolar strain‐electric field curves revealed that BBFT transformed from relaxor‐like to ferroelectric behavior with an increase in x, consistent with changes in the phase assemblage and domain structure. The largest strain was 0.41% for x = 0.63 at 10 kV/mm. The largest effective piezoelectric coefficient (d₃₃^*) was 544 pm/V for x = 0.63 at 5 kV/mm but the largest Berlincourt d₃₃ (148 pC/N) was obtained for x = 0.70. We propose that d₃₃^* is optimized at the point of crossover from relaxor to ferroelectric which facilitates a macroscopic field induced transition to a ferroelectric state but that d₃₃ is optimized in the ferroelectric, rhombohedral phase. Unipolar strain was measured as a function of temperature for x = 0.63 with strains of 0.30% achieved at 175°C, accompanied by a significant decrease in hysteresis with respect to room temperature measurements. The potential for BBFT compositions to be used as high strain actuators is demonstrated by the fabrication of a prototype multilayer which achieved 3 μm displacement at 150°C.     

Piezoelectric softening by Nb substitution in (Ba,Pb)ZrO3 ceramics

Donor doping is commonly applied for softening of the piezoelectric and dielectric properties and facilitation of polarization switching in the ubiquitous Pb(Zr,Ti)O₃ [PZT] ceramics. The origin of the donor‐dopant effects is not entirely clear. (Pb,Ba)ZrO₃ [PBZ] is a related ferroelectric material, its perovskite A‐site being partially occupied by the larger Ba⁺² cation, less prone to evaporation than Pb⁺², and the B‐site is occupied entirely by the valency‐stable Zr⁺⁴. Here we report on our studies of Nb⁺⁵ doping effects in (Pb,Ba)ZrO₃. Similarly, to past observations on La⁺³ and Nb⁺⁵ doped PZT, we find a strong reduction in relative density of PBZ when the doping is <0.5 atomic %. This is accompanied by lattice parameter reduction, enhanced PbO loss, smaller grain size and deterioration of dielectric, piezoelectric and polarization switching properties, the latter being opposite of expected softening effect. All those observations can be interpreted in terms of the Nb entering A‐site at small concentrations. This is supported by ab‐inito calculations and analysis of the possible defect reaction equations. The structure and microstructure of PBZ with Nb>0.2% are consistent with Nb⁺⁵ entering the B‐site and softening effects are observed. The study supports the scenario of hardening due to domain walls pinning by V_Pb‐V_O divacancies and softening upon decrease in their concentration.     

PbZr0.4Ti0.6O3 dielectric reflectors with large photonic band gap and high average optical reflectivity

PbZr_0.4Ti_0.6O₃ multilayer, comprising of three PbZr_0.4Ti_0.6O₃ stacks with a slight difference in their periodic thickness, has been designed and fabricated on FTO substrate based on one single chemical solution and on the simple spinning‐coating and annealing technique. The obtained multilayer exhibits a high reflectivity band with 110 nm photonic stop‐band width and average reflectivity of over 80% at room temperature, rendering the novel arrange of PbZr_0.4Ti_0.6O₃ multilayer system a promising candidate as tunable dielectric mirrors, optical cavities and selective filters.     

Tunable upconversion luminescence in new Ho3+/Yb3+-doped SrBi4Ti4O15 photochromic ceramics for switching application

Upconversion (UC) luminescence modulation is quite important in controlling and processing light for active components of light sources, photoswitches, optical memories, and optical sensing devices. In this work, we reported one kind of novel phosphor, Ho³⁺/Yb³⁺-doped SrBi₄Ti₄O₁₅ ceramics, which displayed both strong UC luminescence and obvious photochromic (PC) reaction. The UC luminescence, PC effect, and the modulation of UC performance based on PC behavior were investigated in detail. By alternating visible light irradiation and thermal stimulus, the UC luminescence could be reversibly regulated. Meanwhile, the modulation was unveiled to tightly rely on the irradiation time and thermal treatment processes. Excellent reproducibility was also achieved. In addition, as an alternative method to thermal treatment, the manipulation of luminescence by electric field was also explored. Finally, the mechanism related to the UC luminescence manipulation was illustrated. The results indicate that these samples could be potentially utilized in optical data storage and anti-counterfeiting security fields.