序列k-错线性复杂度算法

本文给出了一个测量流密码序列稳定性的重要指标Ｋ－错线性复杂度的算法,即求ＧＦ（ｑ）上（ｑ＝ｐ＾ｍ,ｐ：素数）周期为Ｎ＝ｐ＾ｎ序列的Ｋ－错线性复杂度的快速算法。在这里对广义ＧａｍｅｓＣｈａｎ算法－ＧＦ（ｑ）上ｐ＾ｎ序列线性复杂度算法进行了简化,并给出了ＧＦ（ｑ）上ｐ＾ｎ序列Ｋ－错线性复杂度算法及其证明。     

一类可控序列线性复杂度的估计

本文运用指数集的概念，得到了任意有限域ＧＦ（ｑ）（ｑ＝ｐｍ）上Ｌ级ｍ－序列的多项式序列的线性复杂度，并导出了一类可控序列线性复杂度的上界，这个上界很可能是紧上界。当域特征ｐ＝２时，这类序列线性复杂度的上界为Ｌ＋１２［（Ｌ＋１）ｍ－１］，下界为［（Ｌ＋１）ｍ－１］。     

等价于Z^＊pq中离散对数问题的密钥交换体制

对某类素数Ｐ，Ｂｅｒｔ ｄｅｎ Ｂｏｅｒ证明了Ｄｉｆｆｉｅ－Ｈｅｌｌｍａｎ密钥交换体制等价于Ｚｐ中的离散对数问题，在本文中，我们建立Ｚｎ，ａ中密钥交换体制，其中ｎ＝ｐｑ，ｐ，ｑ为两个未知的大的素因子，ａ为选定的Ｚ＾＊ｎ中的伪原理。同样，在一定的限制下，此体制的安全性等价于Ｚｎ，ａ中离散对数问题。其中ｐ，ｑ应满足：（１）λ（λ（ｎ））只含≤Ｂ的素因子，（２）ｎ／λ（λ（ｎ））≤Ｂ′。其中Ｂ＝Ｑ（ｋ）     

超高真空化学气相淀积法生长的n-Si/i-p~+-i SiGe/n-Si结构的透射电镜和二次离子质谱分析

本文用透射电镜（ＸＴＥＭ）和二次离子质谱（ＳＩＭＳ）分析了由超高真空化学气相淀积法（ＵＨＶＣＶＤ）生长的ｎ－Ｓｉ／ｉ－ｐ＋－ｉＳｉＧｅ／ｎ－Ｓｉ结构，发现在硅上外延生长ｉ－ｐ＋－ｉＳｉＧｅ时，在靠近Ｓｉ的ｉ／ｐ＋ＳｉＧｅ界面处存在一个很薄的层，但在ｉ－ｐ＋－ｉＳｉＧｅ上外延生长Ｓｉ时，无此现象产生．此薄层是由在硅上外延生长ｉ－ｐ＋－ｉＳｉＧｅ时硼原子聚集在靠近Ｓｉ的ｉ／ｐ＋ＳｉＧｅ界面处形成的高掺杂薄层．高掺杂的薄层影响由此结构制备的异质结双极晶体管（ＨＢＴ）的ＢＣ结的正向导通电压．     

2～18GHz超宽带射频放大器

采用分布电路原理、ＣＡＤ技术和微带电路技术，制作出多倍频程超宽带放大器。其主要技术参数为，ｆ＝２～１８ＧＨｚ，Ｇ＿ｐ≥３０ｄＢ，△Ｇ＿ｐ≤±３ｄＢ，Ｆ＿ｎ≤７ｄＢｍ，Ｐ＿（－１）≥＋１０ｄＢ，ＶＳＷＲ≤２．５：１。     

布隆检险和广义的诺尔顿－代维南定理

任何线性有源ｎ端网络Ａ可以用一个ｍ（ｍ＝ｎ－１）端口无源网络ｐ与ｍ个独立源组合的线性模型来等效，模型和负载的端口连接必然符合布隆检验。模型和原网络对接入端口的任意负载贡献相同的电压和相同的电流，它事实上是单端口诺尔顿和代维南定理在多端口网络的推广。     

布隆检验和广义的诺尔顿—代维南定理

任何线性有源ｎ端网络Ａ可以用一个ｍ（ｍ＝ｎ－１）端口无源网络ｐ与ｍ个独立源组合的线性模型来等效。模型和负载的端口连接必然符合布隆检验。模型和原网络对接入端口的任意负载贡献相同的电压和相同的电流，它事实上是单端口诺尔顿和代维南定理在多端口网络的推广。     

有限域上具有卷积性质的可逆线性变换的结构

对于从ＧＦ＾ｎ（ｑ）到复数域（Ｆ＾ｎ），本文研究了（Ｆ＾ｎ）上具有卷积性质的可逆线性变换的结构，得到了这类变换的一般形式，对于从ＧＦ＾ｎ（ｑ）到的所有映射构成的集合（Ｆ＾ｎ），本文证明，（Ｆ＾ｎ）上具有卷积性质的可逆线性变换是不存在的。     

环Zq^n上部分bent函数的谱特征

本文在环Ｚｑ＾ｎ上讨论了部分ｂｅｎｔ函数的谱特征（ｑ＝ｐ１＊ｐ２，ｐ１，ｐ２是素数），得到了Ｚｑ＾ｎ上部分ｂｅｎｔ函数的几个新的刻划，揭示了部分ｂｅｎｔ函数的平衡性、线性结构点及非零谱值点之间的相互关系，并对部分ｂｅｎｔ函数的恒变线性结构点进行了分类，指出了它们之间的相互关系，提出了零因子恒变线性结构点和非零因子恒变线性结构两个新概念。     

具有直接带隙的［001］Si_m／Ge_n应变超晶格

本文用半经验紧束缚法（ＬＣＡＯ）对赝形生长在（００１）Ｓｉ１－ｙＧｅｙ（０≤ｙ≤１）衬底上的Ｓｉｍ／Ｇｅｎ（２≤ｍ＋ｎ≤４０）应变层超晶格的能带结构进行了系统的计算．结果表明，当Ｓｉ层和Ｇｅ层的厚度ｍ和ｎ的取值分别为（１，４），（２，３），（３，２），（４，１），（２，８），（３，７），（４，６），（６，４），（３，６），（６，３），（７，７）时，对称应变Ｓｉｍ／Ｇｅｎ超晶格的能带结构为直接带隙，其中ｍ＋ｎ＝１０的规律已为近两年其它理论计算和部分实验结果所证实．本文所得的ｍ＋ｎ＝５及其它ｍ＋ｎ≠１０的直接     

Operation of Tracking Circulators

The classic two circulation conditions of a junction circulator obtained by setting the imaginary part of the complex gyrator impedance to zero and evaluating the real part does not ensure that the in-phase and counter-rotating eigennetworks are separately idealized. This paper indicates that the physical and magnetic variables of the tracking circulator described by Wu and Rosenbaum coincides with these special boundary conditions. Specifically, the gyrator resistance for this circulator may be calculated at the frequency for which the in-phase eigennetwork exhibits a short-circuit boundary condtion (using the n=0 and +-3 modes) and the counter-rotating eigennetwork modes exhibit complex conjugate immittances (using the n= -1, +2 and n = +1, -2 modes). The paper includes a new formulation for the Q-factor of this type of circulator which is used to calculate that of the tracking circulator.     

电网络基本元件群论确定

本文研究了二端口电网络元件体系中各元件集合之间、多端口电网络元件体系中各元件集合之间的群关系,结果表明,二端口电网络元件集合之间、2n端口电网络元件集合之间存在子群与陪集关系,基全这种元件集合之间的群关系,最后确定并用群论证明了二端口电网络基本元件是二端口有源回转器和二端口反照器,多端口电网络基本元件是（p q)端口回转器和2n端口反照器。     

Synthesis of Quarter-Wave Coupled Junction Circulators with Degrees 1 and 2 Complex Gyrator Circuits

The complex gyrator immittance of circulators for which the in-phase eigennetwork is commensurate with those of the degenerate counter-rotating ones, and which may be idealized by a frequency-independent open- or short-circuited boundary condition, may be realized as a 1-port STUB-resistor network of degree 1. If the frequency variation of this eigennetwork cannot be neglected compared to those of the other two, the gyrator circuit is of degree 2. There are altogether eight possible complex gyrator circuits, each of which explicitly exhibits the eigennetworks of the device. A knowledge of that, applicable in any given situation, is mandatory for design.     

Complex gyrator circuit of 4-port single junction circulator

The adjustment of the 4-port single junction circulator involves a degeneracy between a single impedance pole, a pair of split degenerate poles and one impedance zero. The purpose of this paper is to deduce the real part of the complex gyrator circuit of this device under the assumption that the degenerate relationships between the poles and zeros of the arrangement have been met. This determines the gyrotropy of the ideal device and the adjustment of any matching network.     

The saturated photovoltage of a p-n junction

Assuming the conventional divisions of the semiconductor into depleted and neutral regions, it is shown that for an abrupt p-n junction with nondegenerate carriers a relation exists between the open circuit photovoltage and the PN product at the junction(PN)_{0}, which is valid for all signal levels. In the small-signal case this leads to the standard result. At intermediate levels a new relationV = KT/q (1 pm m) log_{e} ([(PN)_{0}]^{1/2}/n_{i})holds, the upper sign for p+-n junctions, the lower for n+-p junctions;m = (micro_{e}-micro_{h})/(micro_{e}+micro_{h}). At very high levels the photovoltage saturates toV = kT/q[log_{e}(M_{p}M_{n}/n_{i^{2}}) + m log_{e}(micro_{h}M_{p}/micro_{e}M_{N})]. Since Mpand MNare the doping levels in the p and n regions, the first term is the diffusion potential and the second term will be positive for p+-n junctions and negative for n+-p junctions. These results compare satisfactorily with the available experimental data.     

Simple method for computing elements of order 2kn, where n|2p?1?1 and 2 ? k ? p+1, in GF[(2p?1)2]

A simple method is developed for computing elements of order 2kn, where n|2p?1?1 and 2 ? k ? p+1, in the Galois field GF(q2), and q = 2p?1 is a Mersenne prime. Such primitive elements are needed to implement complex number-theoretic transforms.     

On MDS extensions of generalized Reed- Solomon codes

An(n, k, d)linear code overF=GF(q)is said to be {em maximum distance separable} (MDS) ifd = n - k + 1. It is shown that an(n, k, n - k + 1)generalized Reed-Solomon code such that2leq k leq n - lfloor (q - 1)/2 rfloor (k neq 3 {rm if} qis even) can be extended by one digit while preserving the MDS property if and only if the resulting extended code is also a generalized Reed-Solomon code. It follows that a generalized Reed-Solomon code withkin the above range can be {em uniquely} extended to a maximal MDS code of lengthq + 1, and that generalized Reed-Solomon codes of lengthq + 1and dimension2leq k leq lfloor q/2 rfloor + 2 (k neq 3 {rm if} qis even) do not have MDS extensions. Hence, in cases where the(q + 1, k)MDS code is essentially unique,(n, k)MDS codes withn > q + 1do not exist.     

Realisation of open-circuit voltage-transfer matrices by grounded nullors

A general synthesis procedure is presented that proves the following theorem: an arbitrary m × n matrix of real rational functions of the complex frequency variable can be realised as the open-circuit voltage-transfer matrix of a grounded transformerless active RC (n + m)-port network containing no more than m + 1 grounded nullors, where n and m are the numbers of the input and output ports, respectively.     

Stable fan filter design using two-variable reactance functions

Two-variable reactance transformation, as proposed by King et al., for the design of stable two-dimensional recursive fan filters with narrow stopbands, is compared with a design method, proposed by Bruton et al., using numerical optimisation of a resistively-terminated (2 + n1 + n2)-port network.