The effect of ion implantation on r.f.-sputtered TiB2 films

Films of TiB₂ were deposited onto various substrates by r.f. sputtering in argon and in an ArBF₃ mixture. The stoichiometric composition of the films was studied by Rutherford backscattering and nuclear reaction techniques. After film deposition, the effect of ion implantation with boron and krypton ions was studied. In the last case a substantial increase in the adhesion of the film to the substrate and in the microhardness was observed.     

Natural and persistent superhydrophilicity of SiO2/TiO2 and TiO2/SiO2 bi-layer films

Sol-gel SiO₂/TiO₂ and TiO₂/SiO₂ bi-layer films have been deposited from a polymeric SiO₂ solution and either a polymeric TiO₂ mother solution (MS) or a derived TiO₂ crystalline suspension (CS). The chemical and structural properties of MS and CS bi-layer films heat-treated at 500 °C have been investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscospy. Water contact angle measurements show that MS SiO₂/TiO₂ and CS TiO₂/SiO₂ bi-layer films exhibit a natural superhydrophilicity, but cannot maintain a zero contact angle for a long time over film aging. In contrast, CS SiO₂/TiO₂ bi-layer films exhibit a natural, persistent, and regenerable superhydrophilicity without the need of UV light. Superhydrophilic properties of bi-layer films are discussed with respect to the nature of the TiO₂ single-layer component and arrangement of the bi-layer structure, i.e. TiO₂ underlayer or overlayer.     

Gamma-irradiation-induced Ag/SiO2 composite films and their optical absorption properties

Small Ag particles or clusters dispersed mesoporous SiO₂ composite films were prepared by a new method: First the matrix SiO₂ films were prepared by sol-gel process combined with the dip-coating technique, then they were soaked in AgNO₃ solutions followed by irradiation of γ-ray at room temperature and in ambient pressure. The structures of these films were examined by X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), and optical absorption spectroscopy. It has been shown that the Ag particles grown within the porous SiO₂ films are very small, and they are isolated and dispersed from each other with very narrow size distributions. With increasing the soaking concentration and an additional annealing, an opposite peakshift effect of the surface plasmon resonance (SPR) was observed in the optical absorption measurements.     

Mo/SiO2 nanocomposite films for optical coatings prepared by vacuum magnetron sputtering

The embedding of metallic nanoparticles in the traditional optical materials (e.g. SiO₂) gives us the possibility to create new optical materials. Metallic particles of nanometric dimensions can be transparent in wide spectral ranges of light. The incorporation of nanocrystal inclusions in such nanocomposites provides the benefit of targeted manipulations of their macroscopic optical response. In this paper we present the possibility to create, using vacuum deposition methods, the nanocomposite coatings with fairly small refractivity.     

Synthesis and optical properties of Cu2O/SiO2 composite films via gamma-irradiation route

The Cu₂O particles or clusters dispersed mesoporous SiO₂ composite films were prepared by a new method: First the matrix SiO₂ films were prepared by sol-gel process combined with the dip-coating technique, and then they were soaked in Cu(NO₃)₂ solutions followed by γ-ray irradiation at room temperature and in ambient pressure. Thus prepared Cu₂O/SiO₂ composite films were examined by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and optical absorption spectroscopy. Compared with the pure Cu₂O nanoparticles, an obvious blue shift existed in the obtained Cu₂O/SiO₂ composite films.     

Preparation of SiO2 films with embedded Si nanocrystals by reactive r.f. magnetron sputtering

SiO_x films with a nominal x-value (1≤x≤2) were deposited on flat-surface silicon substrates by reactive r.f. magnetron sputtering at substrate temperatures of 20 and 500°C, respectively. X-ray diffraction and high resolution TEM investigations of SiO_x films with x=1.45 and x=1 show that as-deposited films have an amorphous structure. After annealing, a nucleation of Si nanocrystals was found with increasing size at increasing initial Si concentration and annealing temperature. The weak photoluminescence in the visible region of as-deposited SiO_x films increases remarkably by annealing with dependence on x.     

CuGaSe2 thin films for photovoltaic applications

Of the I-III-VI₂ group chalcopyrites, CuInSe₂ has already proved its suitability for thin film solar cells owing to its excellent optical and transport properties. CuGaSe₂ is expected to exhibit comparable properties from this point of view. With its band gap of 1.7 eV it is a candidate for use in photovoltaic tandem systems.

The preparation of CuGaSe₂ thin films by means of the vacuum evaporation of the constituent elements (four-temperature method) is described. The structural, electrical and optical properties of these films were investigated. Secondary electron microscopy, energy-dispersive X-ray analysis, X-ray diffraction examination and measurements of the optical transmission, resistivity and thermoelectric power were used to determine the film properties relative to the preparation parameters and stoichiometry. The growth conditions were optimized for solar cell applications. Heterojunctions were prepared by the in situ evaporation of Zn_xCd_1−xS onto the CuGaSe₂ films. The characteristic data of the cells are a short-circuit current of 6 mA and an open-circuit voltage of 620 mV at an illumination at air mass 1.5 on an area of 1 cm².     

SiO2 and Al2O3/SiO2 coatings for increasing emissivity of Cu(In, Ga)Se2 thin-film solar cells for space applications

In this study, optical coatings were investigated as substitutes for the coverglass on flexible thin-film space solar cells. The inherent low emissivity of copper-indium-gallium-diselenide (CIGS) thin-film solar cells was increased using optical coatings for thermal balance in space. Evaporated silicon dioxide (SiO₂) and an additional aluminum oxide (Al₂O₃) coating on the CIGS solar cell increased the emissivity from 0.18 to 0.77. Higher emissivity was realized with the Al₂O₃/SiO₂ double-layer coating than with the SiO₂ single-layer coating. The straightforward double-layer coating gives the CIGS solar cells appropriate radiative properties for keeping the cell within a permissible temperature range in space.     

Electrical and optical properties of r.f.-sputtered amorphous V2O5-CaO-MoO3 films

Amorphous films of the V₂O₅-CaO-MoO₃ system are fabricated by r.f.-sputtering and the d.c. conductivity and optical properties are studied. The conductivity of 1200–1400 nm thick amorphous V₂O₅-CaO-MoO₃ films with different film compositions ranges from 4.7 × 10^–4 to 1.1 S cm^–1 at 458 K. The films are n-type semiconducting. The conduction of the films is attributed to adiabatic small polaron hopping and is primarily due to hopping between V⁴⁺ and V⁵⁺ ions. The films are optically transparent in the visible range. The optical band gap energy is evaluated to be between 2.90 and 2.39 eV. The Urbach tail analysis gives the width of localized states between 0.40 and 0.58 eV. A feasibility study reveals the films to be applicable as transparent film thermistors.     

Structural and optical properties of the SiO2-P2O5 films obtained by sol-gel method

A comparative study of the sol-gel films prepared in the SiO₂-P₂O₅ system starting with triethylphosphate, triethylphosphite and phosphoric acid as P precursors was performed. The work addresses basic aspects of physics, chemistry, and engineering of oxide films for applications in microelectronics, sensing, nano-photonics, and optoelectronics by establishing the influence of different precursors on the composition, structure and optical properties of the obtained films. The influence of the type of substrate (glass and indium tin oxide coated glass) and of the thermal treatment (200 and 500 °C) on their structure and properties was studied. By spectroscopic ellipsometry, X-Ray photoemission spectroscopy and atomic force microscopy measurements the high vaporization of the phosphorous during the densification of the films by thermal treatment was noticed when P-alkoxides were used. The phosphoric acid that forms chemical bond with silica network during the sol-gel process leads to better incorporation of P in the silica network as compared to the P-alkoxides.     

SiO2–K2O–MgO vitreous films doped with erbium and silver nanoparticles for optical applications

The search of new glass compositions for films produced with high optical transparency throughout the visible spectrum from 0.5 μm to the near infrared region is important for optical integrated applications. In this work, we present the preparation of SiO₂–K₂O–MgO vitreous sol–gel films on SiO₂ substrates co-doped with Er³⁺ and Ag nanoparticles. The silver quantum dots were synthesized in continuous media (ex situ) by chemical reduction and isolation from media by anchoring chemical solution-compatible modifiers (aminosilanes) on their surfaces; then, they were successfully integrated into the glass matrix. We present the study of the preparation process and characterization of sol–gel matrices doped with Ag⁰ nanoparticles and Er³⁺, analyzing the role of synthesis parameters and optical properties, and comparing them with other wave-guide compositions, such as PLZT and SiO₂–B₂O₃.     

SiO2表面改性对高填充SiO2/聚四氟乙烯复合薄膜性能的影响

选用三种具有不同疏水官能团的硅烷偶联剂,即含苯基的偶联剂1(Ph-1)、含氟基的偶联剂2(F-2)和含环氧丙氧基的偶联剂3(GP-3)对SiO₂进行表面改性,并采用空气辅助干法共混、冷压烧结并车削成膜的方法制备了SiO₂填充量为35wt%、厚度为50 μm的SiO₂/聚四氟乙烯(PTFE)复合薄膜。改性后SiO₂在PTFE中分散均匀。研究了不同含量F-2对SiO₂/PTFE复合薄膜性能的影响,发现当含氟基的硅烷偶联剂F-2用量(与SiO₂质量比)为0.3%时,SiO₂/PTFE复合薄膜的针孔缺陷最少,拉伸强度由9.2 MPa提高至16.2 MPa;在10 GHz下,SiO₂/PTFE复合薄膜的介电常数由2.475降低至2.416,介电损耗由2.66×10?3降低至2.01×10?3,SiO₂/PTFE复合薄膜显示出优异的综合性能。      

Al2O3/SiO2 and HfO2/SiO2 dichroic mirrors for UV solid-state lasers

HfO₂/SiO₂ and Al₂O₃/SiO₂ multilayers to be employed as high reflectance end mirrors in Cerium-doped fluoride solid-state lasers were produced by radio frequency sputtering. The components were designed to have high transmittance at the pumping wavelength and high reflectance in a wavelength band corresponding to the active medium emission. A photoacoustic beam deflection technique and inspection of the irradiated area under a microscope were used to measure the laser induced damage threshold of the mirrors at the pumping wavelength. These coatings were tested in a laser cavity.     

Thick films of monocrystalline silicon on SiO2 obtained via embedding SiO2 stripes in bulk silicon

A method is presented for obtaining thick films of single-crystal Si on SiO₂ stripes patterned on bulk silicon. We use a classical deposition of a 0.5 μ m poly-Si coating on patterned stripes of SiO₂ grown on 4″ wafers. A controlled sinking of the SiO₂ stripes into the bulk is obtained, via melting the top surface of the substrate. The thick films of single-crystal Si obtained on SiO₂ (typically 20–40 μm in thickness) are free of defects and exhibit the same surface roughness as before crystallization.     

X-ray reflectivity study of r.f.-sputtered thin SiO2 films

X-ray reflectivity investigations have been performed on thin amorphous SiO₂ films obtained by r.f.-sputtering of fused quartz onto Si single crystals in an argon atmosphere.This is a non-destructive technique to determine thickness and density as well as the interface and surface roughness. For the SiO₂/Si system (small differences in density) the X-ray reflectivity is sufficiently sensitive to provide precise information on the occurence of an intermediate layer we obtained only on well-polished silicon wafers.The thickness of the films is compared with that obtained from ellipsometry data and mechanical scanning measurements (stylus method).     

Spray-pyrolysis Cd2SnO4 films for electrochemical applications

Conductive cadmium stannate (Cd₂SnO₄,) films were grown by a simple spray-pyrolysis technique using aerosols ultrasonically generated from solutions containing Cd(thd)₂(TMEDA) and ⁿBu₂Sn(AcAc)₂, and monoglyme as solvent (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate, TMEDA = N,N,N′,N′-tetramethylethylenediamine, AcAc = acethylacetonate). The overall film growing procedure was carried out at or below 400 °C thus allowing low-melting temperature materials like glass to be used as film substrates. Typical resistivity values of Cd₂SnO₄ films were found to be ∼ 2 · 10 ⁻³ Ωcm. The films exhibit excellent electrochemical activity with comparable or higher electron transfer rates than cadmium stannate films obtained via sol-gel methods at high annealing temperature.     

SiO2 layer thickness effects on the (001) texture of FePtCu:SiO2 nanocomposite films

The influence of SiO₂ layer thickness of (Fe₅₂Pt₄₈)₈₈Cu₁₂:SiO₂ multilayer nanocomposite films on their structural and magnetic properties were investigated. The films were deposited on (001) textured FePt films, and then annealed at 873 K. The crystalline texture of (Fe₅₂Pt₄₈)₈₈Cu₁₂:SiO₂ films changes drastically with respect to the thickness of the SiO₂ layers. In the film with 50-Å thick SiO₂ layers, the (111) peak was strong although the (001) orientation is dominant, and self-organized spherical FePtCu particles were formed in the SiO₂ matrix. However, in the film with 19-Å thick SiO₂ layers, flat FePt grains with perfect (001) orientation were obtained. In addition, twins with different crystalline orientations were seen in the above films with different thicknesses of the SiO₂ layers. Accordingly, different perpendicular hysteresis loops were obtained.     

Structure and optical properties of ZnS/SiO2 nanocables

The nanocables with a single crystal ZnS core and a thin amorphous SiO₂ shell were successfully synthesized by a simple thermal evaporation method with the mechanism of Vapor-Solid growth. Its morphology and microstructure were determined by field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The ZnS/SiO₂ nanocables have diameters in the range of 20 nm-250 nm, lengths of several tens of micrometers. The core of the nanocable has a cubic sphalerite structure with the coexistence of periodically alternating twins along the [111] growth direction and stacking fault. The nanocables show strong room-temperature photoluminescence with four emission bands centering at 548 nm, 614 nm, 649 nm and 670 nm that may originate to the impurity of ZnS, existence of Si and oxide-related defects.     

Chemical vapor deposition of SiO2 films by TEOS/O2 supermagnetron plasma

A TEOS/O₂ supermagnetron double electrode plasma system was used to deposit SiO₂ films. Deposition rates were measured as a function of rf power and substrate stage temperature. With an increase of rf power on both electrodes from 40 to 80W, the deposition rate increased; however, with a further increase of rf power from 80 to 120W, the deposition rate ceased to increase or decreased only a small amount. The presence of O-H bonds from bonded water in the film was evaluated using buffered HF (BHF) etching solution. With an increase of rf power from 40 to 120W, the BHF etch rate decreased; i.e., the number of O-H bonds were reduced. A minimum BHF etch rate was observed at a rf phase difference of 180° between the two rf power sources. A SiO₂ film was deposited on a trench-patterned quartz substrate. A flat surface SiO₂ layer with air gaps (voids) was formed on the high-aspect ratio (depth/width=1.5-2) trench area.     

The step coverage of CVD SiO2 glass films

The dependence of the step coverage of chemically vapor deposited undoped SiO₂ glass films on the deposition pressure is reported. It has been found that the step coverage is significantly improved when the deposition pressure is increased by reducing the pumping speed. Increasing the pressure by the addition of nitrogen causes a deterioration in the step coverage capability of the deposition process.