真空灭弧室的发展

真空灭弧室为真空断路器的心脏,真空灭弧室的不断进步,才促使了真空断路器的不断发展。在我国,真空灭弧室的发展综观起来已经历了五代。     

真空灭弧室内部电场分布的分析与仿真

真空灭弧室对于真空断路器的性能有具重要作用,为了了解真空灭弧室内部的电场分布情况,文中采用Ansoft Maxwell仿真软件搭建了真空灭弧室的电场数学模型,并利用有限元分析法进行分析,通过Ansoft Maxwell仿真软件得出的结果表明,有无屏蔽罩对真空灭弧室电场分布有着较大影响。     

避免漏气的真空灭弧室出厂的措施

简述了真空灭弧室的真空度要求，分析了漏气的真空灭弧室出厂的原因，提出了防止漏气的真空灭弧室出厂的措施。     

具有自诊断功能的真空断路器

本发明所提供的真空断路器每一相至少包括一只真空灭弧室，这些真空灭弧室装在一个密闭内，体和真空灭弧室外壳装有传感纤维，纤维连接到断路器外的光电器件上。     

真空灭弧室的一次封排工艺

以真空灭弧室的一次封排工艺的真空度质量为主，对真空灭弧室有关的设计、工艺流程等方面进行讨论；这会对真空灭弧室的生产开发和电真空工艺有所帮助。     

宝光股份固封极柱通过6万次型式试验填补国内空白

近年来,陕西宝光真空电器股份有限公司重视新产品开发工作,在完善配套真空断路器、真空负荷开关、真空接触器、真空重合器、真空分段器、铁道断路器和铁道分相开关等用系列真空灭弧室的基础上,不断挖掘潜力,拓宽产品门类,寻找新的经济增长点。根据市场发展需求,研制开发了真空灭弧室的延伸产品真空灭弧室固封极柱。     

生产过程中真空灭弧室零件的预除气和储存

真空灭弧室的真空度质量十分重要。本文就真空灭弧室的真空度质量与零件的预除气、储存等有关方面进行一些讨论；会对真空灭弧室的生产开发有所帮助。     

真空灭弧室的设计

真空灭弧室是真空开关的最重要的部件，被誉为真空开关的心脏，因此，真空灭板室的设计至为重要，本文介绍真空灭板室的最新设计，其中包括真空灭弧室的基本要求，触头材料及几何形状，波纹管，屏蔽，真空壳体的设计以及真空灭弧室的总体设计等。真空灭板室用于真空断路器，真空接触器以及真空负荷开关等，它对整机的机电性能影响很大，因此，精心设计和制造性能优异的真空灭弧室以满足各种使用场合不同用户要求，这是摆在设计和制造     

真空灭弧室的残余气体分析

真空灭弧室的真空性能其制造的关键。真空灭弧室在三十多年的寿命期内要保持高真空，就必须对其最大漏气率和内部放气量提出严格要求。     

屏蔽罩对真空灭弧室性能影响的研究

分析了屏蔽罩对真空灭弧室耐压及燃弧后介质特性恢复的影响 ,以及屏蔽罩厚度及材料对真空灭弧室的性能影响。最后研究了屏蔽罩大小对真空灭弧室电弧电压、屏蔽罩电位及屏蔽罩电流的影响     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.