共查询到20条相似文献,搜索用时 109 毫秒
1.
2.
基于LTCC技术设计了一款双通道应用的开关、驱动和低噪放一体化模块,利用HFSS对无源器件电感进行仿真,将电感嵌入LTCC基板中,不仅提高了模块的集成度,同时也降低了成本。在1.8~2.1 GHz频段内,ANT-RX通道增益达到23.8 dB,输入驻波比小于1.49,输出驻波比小于1.33,通道隔离大于44 dB,噪声系数小于1.21 dB(含评估板单端损耗约为0.15 dB);ANT-TX通道插入损耗小于0.42 dB(含评估版损耗约0.3 dB),输入输出驻波比均小于1.1。 相似文献
3.
4.
5.
阐述了一种新颖的仿真方法用于设计带状线功分器,该方法将ADS与HFSS联合使用,并以一款带状线功分器的设计为例,在较短时间成功制备出工作频率700~2 700 MHz,回波损耗小于-22 dB,插入损耗为3.1 dB(含分配比),带内波动小于0.1 dB,隔离度大于20 dB的高质量带状线功分器。通过比较仿真和测试结果,两者基本一致,这表明该仿真方法可大大提高仿真效率,缩短研发周期。 相似文献
6.
7.
8.
基于毛纽扣独特的特性,对垂直互连技术展开研究,设计了一种基于毛纽扣的垂直互连结构,通过对毛纽扣绕制成型工艺的研究,完成毛纽扣垂直互连样品的制作,并对设计的三线型毛纽扣垂直互联结构模型进行三维仿真优化和分析.通过对比分析样品测试结果与仿真结果,在测试K波段内测得插入损耗小于-0.92 dB,反射系数小于-25 dB,表明... 相似文献
9.
借助低温陶瓷共烧(LTCC)技术和三维叠层结构的设计方法,设计了有限传输零点的带通滤波器(BPF),然后通过匹配网络设计了一种S波段双工器,利用HFSS仿真软件对其对其参数进行了仿真优化。该双工器尺寸为18.4mm×15.8mm×0.6mm,在2.06GHz和2.21GHz处的插损小于-3.72dB,在1.87GHz和2.32GHz处衰减大于-55dB,在1.51GHz到2.52GHz处隔离度小于-12dB,达到了双工器设计指标要求和小型化的目的。 相似文献
10.
11.
12.
A distributed low-noise amplifier (LNA) employing novel multilayered transmission lines and inductors is designed in a standard 0.18 mum CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8plusmn0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05times0.37 mm 2 chip size including RF pads 相似文献
13.
This work presents a low-noise amplifier (LNA) design with a wide-range gain control characteristic that integrates adjustable current distribution and output impedance techniques. For a given gain characteristic, the proposed LNA provides better wideband interference rejection performance than conventional LNA. Moreover, the proposed LNA also has a wider gain control range than conventional LNA. Therefore, it is suitable for satellite communications systems. The simulation results demonstrate that the voltage gain control range is between 14.5 and 34.2 dB for such applications (2600 MHz); the input reflection coefficient is less than ?18.9 dB; the noise figure (NF) is 1.25 dB; and the third-order intercept point (IIP3) is 4.52 dBm. The proposed LNA consumes 23.85–28.17 mW at a supply voltage of 1.8 V. It is implemented by using TSMC 0.18-um RF CMOS process technology. 相似文献
14.
为了实现X波段的低噪声放大器,介绍了按最小噪声系数设计,采用两级级联,利用Eudyna公司的HEMT晶体管设计制作的低噪声放大器。通过专用微波电路设计软件(AWR),对该电路的稳定系数、功率增益、噪声系数、驻波比、匹配网络等进行了仿真分析。根据分析结果制作的X波段LNA取得了如下指标:在9.5~10.5 GHz频带内,功率增益大于22 dB,噪声系数小于1.5 dB,输入输出驻波小于1.7。 相似文献
15.
采用SMIC 0.18 μm CMOS工艺设计了一个低电压低功耗的低噪声放大器(Locked Nucleic Acid,LNA).分析了在低电压条件下LNA的线性度提高及噪声优化技术.使用Cadence SpectreRF仿真表明,在2.4 GHz的工作频率下,功率增益为19.65 dB,输入回波损耗S11为-12.18 dB,噪声系数NF为1.2 dB,1 dB压缩点为-17.99 dBm,在0.6V的供电电压下,电路的静态功耗为2.7 mW,表明所设计的LNA在低电压低功耗的条件下具有良好的综合性能. 相似文献
16.
设计了一款采用可调谐有源电感(TAI)的可调增益的小面积超宽带低噪声放大器(LNA),输入级采用共基极结构,输出级采用射随器结构,分别实现了宽带输入和输出匹配;放大级采用带有反馈电阻的共射共基结构以取得宽的带宽,并采用TAI作负载,通过调节TAI的多个外部偏压使LNA的增益可调。结果表明,该LNA在2~9GHz的频带内,通过组合调节有源电感调节端口的偏压可实现S21在16.5~21.1dB的连续可调;S11小于-14.7dB;S22小于-19.3dB;NF小于4.9dB;芯片面积仅为0.049mm2。 相似文献
17.
Barras D. Ellinger F. Jackel H. Hirt W. 《Microwave and Wireless Components Letters, IEEE》2004,14(10):469-471
A low-power low-noise amplifier (LNA) for ultra-wideband (UWB) radio systems is presented. The microwave monolithic integrated circuit (MMIC) has been fabricated using a commercial 0.25-/spl mu/m silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technology. The amplifier uses peaking and feedback techniques to optimize its gain, bandwidth and impedance matching. It operates from 3.4 to 6.9GHz, which corresponds with the low end of the available UWB radio spectrum. The LNA has a peak gain of 10dB and a noise figure less than 5dB over the entire bandwidth. The circuit consumes only 3.5mW using a 1-V supply voltage. A figure of merit (FoM) for LNAs considering bandwidth, gain, noise, power consumption, and technology is proposed. The realized LNA circuit is compared with other recently published low-power LNA designs and shows the highest reported FoM. 相似文献
18.
Hsien-Ku Chen Da-Chiang Chang Ying-Zong Juang Shey-Shi Lu 《Microwave and Wireless Components Letters, IEEE》2007,17(8):616-618
A wideband low-noise amplifier (LNA) with shunt resistive-feedback and series inductive-peaking is proposed for wideband input matching, broadband power gain and flat noise figure (NF) response. The proposed wideband LNA is implemented in 0.18-mum CMOS technology. Measured results show that power gain is greater than 10 dB and input return loss is below -10 dB from 2 to 11.5 GHz. The IIP3 is about +3 dBm, and the NF ranges from 3.1 to 4.1 dB over the band of interest. An excellent agreement between the simulated and measured results is found and attributed to less number of passive components needed in this circuit compared with previous designs. Besides, the ratio of figure-of- merit to chip size is as high as 190 (mW-1 /mm2 ) which is the best results among all previous reported CMOS-based wideband LNA. 相似文献
19.
A GaAs dual-loop negative-feedback low-noise amplifier (LNA) designed for the square kilometre array is presented. Effects of transformer non-idealities on LNA performance are discussed. The LNA has 0.5 dB noise figure and -10 dB input return loss from 0.6 to 1.6 GHz. 相似文献
20.
A merged CMOS LNA and mixer for a WCDMA receiver 总被引:2,自引:0,他引:2
Sjoland H. Karimi-Sanjaani A. Abidi A.A. 《Solid-State Circuits, IEEE Journal of》2003,38(6):1045-1050
A low-noise amplifier (LNA) and mixer circuit in 0.35-/spl mu/m CMOS operates at 2.1 GHz. Merging the LNA and mixer lowers the number of transistors in the signal path and thereby also the nonlinearity and power consumption. The circuit meets the specifications for a direct conversion wide-band code-division multiple access (WCDMA) receiver. Its noise figure is 3.4 dB (5kHz to 5MHz), the total conversion gain is 23 dB, the third-order input-referred intercept point is -1.5 dBm, and the local oscillator leakage to the antenna is less than -71 dBm. The fully differential circuit takes 8 mA from a 2.7-V supply. 相似文献