45~#钢宽带激光淬火研究

:本文利用宽带CO2 激光束 ,对 45 #钢表面进行宽带淬火 ,获得单道淬火宽度 10mm以上。淬硬层硬度达 5 0 0～ 6 30Hv0 3是非淬硬层的 2～ 2 5倍 ,深度达 1 9～ 2 .0mm。激光淬硬层分为表面过热区、均匀相变区和过渡区三个区域 ,所对应的金相组织分别为高碳马氏体、隐晶马氏体和混和马氏体。宽带激光淬火造成的组织细化和大量高碳马氏体的形成是硬度提高的主要原因。在扫描速度v =4mm/s和离焦量 18mm条件下 ,45 #钢宽带激光淬火的最佳功率约为 3 0～ 3 3kW。     

U74钢轨表面激光淬火工艺及其对耐磨性的影响

本文研究了U74钢轨表面激光淬火工艺及其对表面耐磨性能的影响。激光淬硬层分为表面过热区、均匀相变区和过渡区。淬硬层深度约为0.5-0.8mm，单道淬火宽度约4mm，表面硬度可达Hv850-Hv1000，淬硬层组织为高碳马氏体，细晶混合马氏体和少量奥氏体。激光淬火造成的组织细化和大量高碳马氏体的形成是硬度提高的主要原因。在扫描速度为6mm/秒，离焦量60mm的条件下，U74钢轨表面激光淬火的最佳功率约为1.8kW。在该功率下，可以获得最高硬度、最大硬化层深度和最佳能量利用系数。摩擦学试验表明，经过激光淬火，钢轨表面的耐磨性能有了明显提高。     

35~#钢激光宽带淬火研究

利用扫描激光束对 35 # 钢材料进行了宽带激光淬火 ,在 3.0～ 3.3k W激光功率下 ,获得单道淬硬带宽15 mm,淬硬层深 0 .5 3mm。给出了不同激光功率条件下淬火区硬度沿淬硬层深的变化曲线 ,淬硬层硬度分布基本均匀 ,平均硬度约为 5 5 4～ 675 Hv,与基体硬度比较提高了 2 .3～ 2 .5倍。显微组织结构分析显示淬硬层沿层深方向可分为完全淬硬层、过渡层和高温回火区三个区域。     

35#钢激光宽带淬火研究

利用扫描激光束对35#钢材料进行了宽带激光淬火,在3.0～3.3kW激光功率下,获得单道淬硬带宽15mm,淬硬层深0.53mm.给出了不同激光功率条件下淬火区硬度沿淬硬层深的变化曲线,淬硬层硬度分布基本均匀,平均硬度约为554～675Hv,与基体硬度比较提高了2.3～2.5倍.显微组织结构分析显示淬硬层沿层深方向可分为完全淬硬层、过渡层和高温回火区三个区域.     

40CrNiMoA齿轮激光表面强化及抗疲劳性分析

对40CrNiMo齿轮进行了激光表面强化处理,用SEM和TEM对处理试样显微组织进行了分析,测试并分析了其显微硬度,并进行了抗疲劳性现场试验,结果表明:40CrNiMo激光淬火后其组织由淬硬层、过渡区和基体组成,淬硬层组织为细小的板条马氏体和针状马氏体,层深约1.5mm,过渡区为马氏体和索氏体混合组织,基体为回火索氏体。淬硬层表面硬度比常规淬火硬度有所提高。40CrNiMo激光淬火齿轮比20Cr2Ni4渗碳淬火齿轮疲劳强度提高约10%。     

T10钢激光相变硬化的组织与性能研究

采用激光相变硬化工艺对T10钢表面进行了改性处理,并对改性后的组织与性能进行了研究,结果表明:硬化区组织为针状马氏体+少量残余奥氏体,热影响区组织为少量针状马氏体+网状渗碳体.基材组织为回火马氏体.淬硬层表面的洛氏硬度最高值为940Hv0.1,淬硬层内的显微硬度分布均匀,从硬化区→热影响区→过渡区→基材显微硬度呈梯度变化.激光相变硬化后淬硬层耐磨性分析,要比常规淬火后耐磨性提高10%左右.     

一种大功率激光加工用新型宽带光斑成形抛物面镜

介绍了一种大功率激光加工用新型宽带光斑成形抛物面镜的设计原理和实验结果.根据几何光学原理,采用光线追迹的方法对该抛物面镜的光斑进行分析,证明通过抛物面镜反射聚焦后,能够将原始圆形激光束整形为光强分布均匀的窄条形光斑.并利用该新型抛物面镜及横流CO2激光器,对45#钢进行了激光相变硬化研究,测量了淬火带尺寸和淬硬层深度,并对硬化层形貌及其金相组织进行了观察和分析.结果表明,当激光器输出功率为3 kW,窄条光斑长度12 mm,扫描速度15 mm/s时,该45#钢淬硬层硬度值可达540～580 HV0.3,是非淬硬层的3.5～4倍.淬硬层深度约为1 mm,单道淬火宽度10 mm以上,硬化层分布均匀.     

激光淬火与中频感应淬火对比研究

利用摩擦磨损实验机对45CrNi钢开展了激光淬火和中频感应淬火摩擦磨损对比实验研究，并利用扫描电镜(SEM)、投射电镜(TEM)和X射线衍射仪(XRD)等设备对两种淬火试样硬化层进行了微观分析。结果表明，在载荷50～250 N条件下，激光淬火试样的耐磨性比中频感应淬火试样提高了4%～21%;中频感应淬火试样的摩擦系数略大于激光淬火试样的摩擦系数。两者的主要磨损形式均为磨粒磨损，但中频感应淬火试样磨损后表面犁沟的深度和宽度大于激光淬火试样表面犁沟的深度和宽度。两种淬火方法淬硬层均为板条马氏体和少量针状马氏体的混合组织，但中频感应淬火淬硬层有大量的碳化物析出，碳化物含量多且碳化物颗粒大、残余奥氏体多。     

综合工艺参数对常用钢铁材料的激光淬火特性的影响

本文利用CO2边疆激光器对HT200和45钢进行了表面淬火。对淬硬层显微组织、硬度和深度进行了研究，发现综合工艺参数（q）对材料的激光淬火有较强的影响规律。     

高碳高铬轧辊用钢激光相变强化研究

为了研究高碳高铬轧辊用钢的激光相变强化行为,采用5kW连续横流CO2激光器对高碳高铬轧辊进行激光相变强化试验,并进行了显微组织分析和硬度测试,得到了适应生产的激光相变强化工艺参数.结果表明,激光相变强化处理后的硬度可由550HV提高到750-800HV,峰值可达900HV.当扫描速度为8mm/s,激光功率为2200W,光斑直径为8mm时,可得到0.5mm深的淬硬层,且不出现软化带.     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Electrooptic ferroelectric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films

We report on waveguiding and electrooptic properties of epitaxial Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films grown by radio-frequency magnetron sputtering on Al/sub 2/O/sub 3/(11_02) single crystal substrates. High optical waveguiding performance has been demonstrated in infrared and visible light. The in-plane electrooptic effect has been recorded in transmission using a transverse geometry. At dc fields, the effective linear electrooptic coefficient was determined to 28 pm/V, which is promising for modulator applications.     

Broadband microwave noise characteristics of high-linearity composite-channel Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN HEMTs

We report broadband microwave noise characteristics of a high-linearity composite-channel HEMT (CC-HEMT). Owing to the novel composite-channel design, the CC-HEMT exhibits high gain and high linearity such as an output third-order intercept point (OIP3) of 33.2 dBm at 2 GHz. The CC-HEMT also exhibits excellent microwave noise performance. For 1-/spl mu/m gate-length devices, a minimum noise figure (NF/sub min/) of 0.7 dB and an associated gain (G/sub a/) of 19 dB were observed at 1 GHz, and an (NF/sub mi/) of 3.3 dB and a G/sub a/ of 10.8 dB were observed at 10 GHz. The dependence of the noise characteristics on the physical design parameters, such as the gate-source and gate-drain spacing, is also presented.