精确测量功率MOSFET的RDS（on）——使用晶圆测试实验室中的常见设备，就可获得精确的测量值

电阻值的测量通常比较简单。但是，对于非常小阻值的测量，我们必须谨慎对待我们所做的假定。对于特定的几何形状，如电线，Kelvin方法是非常精确的。可以使用类似的方法来测量均匀样本的体电阻率和面电阻率，但是所使用的公式不同。在这砦情况下，必须考虑探针间距和样本厚度。仅仅运用Kelvin法本身无法保证精度。     

可同时精确测量高温物体发射率及温度的系统(1)

介绍了一种采用0．81μm的激光作为光源,Si-PIN光电二极管作为光接收元件,以8031单片机控制实现的可同时精确测量高温物体发射率及温度的系统。该系统主要由光学发射与接收系统、信号放大与处理系统及显示系统3部分组成。还介绍了该系统的工作原理及基本结构,讨论了其中的技术难点及其相应的解决方案,分析了发射率及温度的标准测量误差及相对误差。对1000℃的铸铁进行测量时,发射率的测量精度σελ≈0．283×10－2,|（σελ／ελ）|≈0．35％;温度的测量精度σT＝0．95K,|σT／T|≈0．075％。     

Vishay推出具有业内最低RDS(on)的P沟道MOSFET

正Vishay Intertechnology宣布,推出具有业内最低导通电阻的新款P沟道MOSFET—Si7157DP,扩充其TrenchFETP沟道GenIII功率MOSFET。VishaySiliconixSi7157DP在-10V和-4.5V电压下的导通电阻分别低至0.0016Ω和0.0020Ω,可提高移动电子设备的效率。     

探针尺寸对四探针法测量薄膜电阻率精度的影响

The four-probe technique is widely used in the characterization of electrical properties of solids and thin films. To investigate the influence of finite size probes with non-planar contact on the standard four-probe method, we have proposed an image method to simulate the potential distribution within the specimen. The numerical results show that for infinitely thick samples, the standard method can only provide accurate determination of resistivity （relative error below 1%） when the ratio of the average inter-electrode spacing to the diameter of the probe is greater than 3. We have also found that disregarding the probe size brings a less dominate error than that introduced by the approximate formula, when the sample＇s thickness is close to the inter-electrode spacing.     

e络盟为亚太区新增英飞凌革命性的COOLMOS~(TM)系列功率MOSFET

正e络盟日前宣布提供来自全球半导体和系统解决方案领先提供商英飞凌的高压MOSFET产品组合—C7和P6系列CoolMOSTM功率MOSFET,它们具备极低的开关和传导损耗,从而可实现更高的功率密度和效率。同时,该系列功率MOSFET还提供最优化的硬开关拓扑性能,完美应用于太阳能、服务器、电信设备及UPS(不间断电源)等应用领域。英飞凌科技公司高压功率转换产品负责人Jan-WillemReynaerts表示:"英飞凌推出的CoolMOSTM是一款用于根据超结理论设计高压功率MOSFET的     

应变Si_(1-x)Ge_x材料掺杂浓度的表征技术

在分析研究Si1 -xGex 材料多子迁移率模型的基础上,建立了Si1 -xGex 材料电阻率与其Ge组分、掺杂浓度及温度关系的曲线谱图.同时,通过对半导体材料掺杂浓度各种表征技术的分析和实验研究,提出了采用四探针法表征Si1 -xGex 材料掺杂浓度的技术.此表征技术与Si材料掺杂浓度的在线检测技术兼容,且更加简捷.此表征技术的可行性通过实验及对Si1 -xGex 材料样品掺杂浓度的理化分析得到了验证     

线性区工作模式下沟道中的载流子迁移率和温度梯度如何影响功率MOSFET的温度系数(TC)：理论研究、测试和仿真

本文研究了MOSFET反型层中载流子的迁移率以及迁移率如何影响温度系数（TC）。迁移率模型中考虑了在反型层中所有的散射机构。本研究对TC进行了新的考虑,并用一个实例验证了提出的模型。     

吉时利推出面向源测量单元(SMU)仪器的首款免费应用程序

正近日,吉时利仪器宣布开发了一款面向安卓智能手机和平板电脑(这些设备可通过其前面板USB接口与吉时利2600B系列数字源表SMU仪器互动)的免费应用程序:IVy。IVy延伸了吉时利的Touch,Test,Invent(触摸、测试、创新)设计理念,向台式2600B系列仪器用户提供了快速、易于使用的触摸屏工具,来对2和3端子器件进行特性分析。借助智能移动设备,IVy把2600B系列仪器变成强大的工具,让用户能够高效地进行直观、互动和分享测量结果,同时帮助他们对其器件的性能有更深入的理解。     

利用RTS噪声确定MOSFET氧化层中陷阱位置的方法

强场诱生并与电场奇异性相关的边界陷阱是影响深亚微米MOS器件可靠性的关键因素之一.文中研究了深亚微米MOS器件的随机电报信号(RTS)的时间特性,提出了一种通过正反向测量器件非饱和区噪声的手段来确定边界陷阱空间分布的新方法.对0.18μm×0.15μm nMOS器件的测量结果表明,利用该方法可以准确计算深亚微米器件氧化层陷阱的二维位置,还为深亚微米器件的可靠性评估提供了一种新的手段.     

GaAs (110)量子阱的电子自旋弛豫

采用固态源分子束外延的方法在GaAs(110)取向衬底上生长了GaAs/AlGaAs多量子阱结构.对样品进行了低温光致发光谱和时间分辨光致发光谱的测量,结果表明激发功率和激发波长对室温下量子阱内电子的自旋弛豫时间有强烈的影响.对于常见的GaAs(100)量子阱起支配作用的D'yakonov-Perel' (DP)自旋弛豫机制,在GaAs (110)量子阱材料里被充分地抑制了.对于缺失了DP相互作用的GaAs (110)多量子阱,电子-空穴相互作用对自旋弛豫时间随激发功率变化有重要的影响.     

一种精确测量MOSFET晶圆导通电阻的方法

导通电阻的准确测量是低导通电阻MOSFET晶圆测试中的一个难点。要实现毫欧级导通电阻的测试,必须用开尔文测试法;但实际的MOSFET晶圆表面只有两个电极(G、S),另外一个电极(D)在圆片的背面,通常只能将开尔文的短接点接在承载圆片的吸盘边缘,无法做到真正的开尔文连接,由于吸盘接触电阻无法补偿而且变化没有规律,导致导通电阻无法精确测量。介绍了一种借用临近管芯实现真正开尔文测试的方法,可以实现MOSFET晶圆毫欧级导通电阻准确稳定的测量。     

理解功率MOSFET的R_(DS(ON))温度系数特性

通常,许多资料和教材都认为,MOSFET的导通电阻具有正的温度系数,因此可以并联工作。当其中一个并联的MOSFET的温度上升时,具有正的温度系数导通电阻也增加,因此流过的电流减小,温度降低,从而实现自动的均流达到平衡。同样对于一个功率MOSFET器件,在其内部也是有许多小晶胞并联而成,晶胞的导通电阻具有正的温度系数,因此并联工作没有问题。     

A high-performance planar power MOSFET

Design and experimental realization of a 450-V, 0.75-Ω DMOS power transistor are discussed. Optimization criteria are evaluated for the control of parasitic elements of the planar diffused design.     

功率MOSFET管的热疲劳寿命预测

通过ANSYS有限元分析软件对TO-263器件功率MOSFET管进行电-热-机械耦合分析,并对其热疲劳寿命作出预测。首先进行了瞬态热分析,得出了芯片的热通量变化图,在此基础上进行模拟并通过Coffin-Manson定律预测功率MOSFET管的热疲劳寿命。结果表明,TO-263器件功率MOSFET管的热疲劳失效循环总数为6 113。     

功率MOSFET寄生振荡的研究

针对MOSFET易产生寄生振荡的问题,在分析振荡与驱动电路各参数之间关系的基础上,通过加入合适的驱动电阻来解决该振荡问题,从而保证MOSFET能在高速应用场合的可靠运行.该方法具有实现简单、成本低廉、安全可靠的特点.经过1000W纯正弦波逆变器设计应用,实验波形表明驱动电路的合理性和有效性.     

广播数据系统(RDS)接收机原理

RDS作为一种成本低廉、技术成熟、覆盖范围广的无线广播系统，其中孕育的市场商机是不可估量的，本文重点介绍了RDS接收机的原理及应用。     

A novel trench gate floating islands power MOSFET (TG-FLIMOSFET): Two-dimensional simulation study

Novel trench gate floating islands MOSFET (TG-FLIMOSFET) designed using the concept of “Opposite Doped Buried Regions” (ODBR) and floating islands (FLI) along with trench gate technology is proposed and verified using two-dimensional simulations. The conventional FLIMOSFET experimentally demonstrated recently, although offers lowest on-resistance in the low voltage range, however, suffers from quasi-saturation effect like any other power MOSFETs. The proposed TG-FLIMOSFET demonstrated to obtain about 30% reduction in peak electric field in drift region of the proposed device. TG-FLIMOSFET also demonstrates quasi-saturation free forward and transconductance characteristics, improved synchronous rectifying characteristics, identical breakdown voltage, reduced on-resistance and increased transconductance ‘gm’ when compared with the conventional FLIMOSFET for various trench geometries. The proposed device breaks the limit set by the conventional FLIMOSFET approximately by a factor of 10. A possible process flow sequence to fabricate the proposed device commercially by integrating multi-epitaxial process with trench gate technology is also presented.     

Challenges in SiC power MOSFET design

The impact of fundamental and technological parameters is considered for SiC power MOSFETs. The wide bandgap nature of SiC increases the surface electric field by 2× at inversion compared to silicon, placing an important role on surface roughness in reducing the field-effect mobility. The presence of interface-trapped charges also acts to reduce the channel mobility and increases the sensitivity of the threshold voltage to temperature. The high critical electric field of SiC increases the stored energy in the switch output capacitance by 10× compared to silicon. For hard-switched converters, it is important to design SiC MOSFETs with a high saturation current to enable high-speed turn-on transients required to discharge the integral drain-source capacitance.     

便携式应用领域电源MOSFET的选择

随着封装技术和硅工艺的进步,具有更高电源密度和更高效率的小尺寸MOSFET正在逐步克服原来与器件尺寸相关的电源处理能力和处理效率问题。     

Advances in SiC power MOSFET technology

In recent years, SiC has received increased attention because of its potential for a wide variety of high temperature, high power, high frequency, and/or radiation hardened applications under which conventional semiconductors cannot adequately perform. For semiconductor devices designed to operate in these harsh conditions, SiC offers an unmatched combination of electronic and physical properties. The availability of SiC wafers on a commercial basis has led to the demonstration of many types of metal-oxide semiconductor (MOS)-gated devices that exploit its unique properties. To which extent the potential of SiC power MOSFET can be utilized is a question of appropriate SiC polytype, device structure, MOS interface quality and maturity of the technology. This paper reviews the present status of the SiC power MOSFETs technology that is approaching commercialization. Emphasis is placed upon the impact of SiO₂–SiC interface quality on the performance of SiC MOSFETs.