Fabrication and characterization of Mg-doped ZnO nanorod arrays

Photoelectronic characteristics are investigated in well-aligned MgO-coated ZnO nanorods (MgO/ZnO nanocables) grown on Si substrates buffered with ZnO film at a low temperature by solution techniques. Transmission electron microscopy shows that a rough surface was observed for the MgO-coated ZnO nanorods due to deposition of MgO nanoparticles on the surface of the ZnO nanorods. However, after annealed at high temperatures, the surface of the MgO-coated ZnO nanorods was flattened to form Mg-doped ZnO nanorods. Photoluminescence spectra of Mg-doped ZnO nanorods displayed a blue shift of the near-band-edge emission with increasing annealing temperature indicative of an increase in the band gap of the MgZnO alloy due to diffusion of the Mg atoms into the ZnO nanorods. In contrast, no blue shift was detected for the samples annealed in H2/N2 (5%/95%) reduction atmosphere but a blue emission was detected at 800 degrees C, indicating that MgO diffusion process may produce a new luminescent center to emit the blue emission in H2/N2 reduction atmosphere.     

Effect of reaction conditions on the morphology and optical properties of ZnO nanocrystals

We report a simple hydrothermal method at low temperature for synthesis of zinc oxide (ZnO) nanorods followed by ultrasonication. The samples were characterized by powder X-ray diffraction (XRD), Fourier transform infrared spectroscopy, transmission electron microscopy (TEM), UV–Vis absorption spectrophotometer and photoluminescence (PL) spectroscopy. The XRD results shows the prepared ZnO nanocrystals are in wurtzite structure. TEM results indicate the growth of ZnO nanorods with increasing reaction stirring time and morphology also get affected after ultrasonication. PL studies also reveal the presence of defects considered as the main reason for the green emission in PL with increasing reaction time and blue shift in UV emission corresponds to reduction of tensile strain.     

Effect of morphology in the photocatalytic degradation of methyl violet dye using ZnO nanorods

In the present work, high purity ZnO nanorods were synthesized by solid state reaction method at different annealing temperatures (250–400 °C). The structural, morphological and optical characteristic of the ZnO nanorods were studied. X-ray diffraction results confirmed that the ZnO nanorods have Wurtzite structure with high crystal quality. The grain size has increased from 23 to 27 nm with increasing temperature. The scanning electron microscopy and high resolution-transmission electron microscopy photographs showed the formation of ZnO nanorods. The bonding natures of the synthesized nanorods were analyzed by Fourier transform infra-red spectroscopy. The blue shift in the absorption edge was observed from the UV–Vis spectrum. The photoluminescence spectra showed two emission peaks corresponding to blue and red emissions. The photocatalytic performance of these nanorods was evaluated using methyl violet dye. The result showed that photocatalytic performance is highly depends on the morphology of the nanorods.     

ZnO纳米棒Al掺杂和A1,N共掺杂的制备技术与光致发光性能

采用水热法首先合成了Al掺杂ZnO(AZO)纳米棒,在此基础上通过550℃的氨气氛中退火制备了Al,N共掺杂ZnO(ANZ())纳米棒.运用X射线衍射(XRD),场发射扫描电镜(FESEM),透射电子显微镜(TEM),X射线能谱(EDS)和光致发光(PL)对样品进行了表征与分析.结果表明,制备的AZO和ANZ()纳米棒...     

Controllable synthesis and photoluminescence properties of ZnO nanorod and nanopin arrays

Well-aligned ZnO nanorods and nanopins are synthesized on a silicon substrate using a one-step simple thermal evaporation of a mixture of zinc and zinc acetate powder under controlled conditions. A self-assembled ZnO buffer layer was first obtained on the Si substrate. The structure and morphology of the as-synthesized ZnO nanorod and nanopin arrays are characterized using X-ray diffraction, and scanning and transmission electron microscopies, energy-dispersive X-ray spectroscopy, and photoluminescence spectroscopy. The influence of the background atmosphere on the two ZnO nanostructures has been studied. Two different growth mechanisms are mentioned to interpret the formation of ZnO nanorod and nanopin arrays in our work. The room-temperature PL features the ZnO nanorods exhibit only sharp and strong ultraviolet (UV) emission emissions, which confirms the better crystalline and optical quality than the ZnO nanopins.     

低温水热法生长ZnO纳米棒阵列的电子结构及光学特性(英文)

使用低温水热法在Si衬底上生长ZnO纳米棒阵列.通过X射线衍射和扫描电子显微镜对ZnO纳米棒的结晶性和形貌进行观测.结果表明,六棱柱形ZnO纳米棒沿c轴方向的阵列性良好,且均匀致密的生长在衬底上.室温光致发光谱表明应用低温水热法可以得到光学性质良好的ZnO纳米棒阵列.使用同步辐射对ZnO纳米棒阵列的氧K带边进行X射线吸收近带边谱测量,研究了不同半径ZnO纳米棒阵列的局部电子结构及其半径对电子结构的影响.另外,对ZnO纳米棒及ZnO薄膜的局部电子结构进行了对比研究.     

Low-temperature growth and optical properties of Ce-doped ZnO nanorods

Ce-doped ZnO nanorod arrays were grown on zinc foils by a hydrothermal method at 180°C. The effects of Ce-doping on the structure and optical properties of ZnO nanorods were investigated in detail. The characterisation of the rod array with X-ray diffraction and X-ray photoelectron spectroscopy indicated that Ce³⁺ ions were incorporated into the ZnO lattices. There were no diffraction peaks of Ce or cerium oxide in the pattern. From UV-Vis spectra, we observed a red shift in the wavelength of absorption and decreased band gap due to the Ce ion incorporation in ZnO. The photoluminescence integrated intensity ratio of the UV emission to the deep-level green emission (I _UV/I _DLE) was 1.25 and 2.87, for ZnO and Ce-doped ZnO nanorods, respectively, which shows a great promise for the Ce-doped ZnO nanorods with applications in optoelectronic devices.     

Synthesis and fabrication of Mg-doped ZnO-based dye-synthesized solar cells

Undoped and 2, 4 and 6 at.% Mg-doped ZnO nanorods were successfully deposited on ZnO seeded fluorine tin oxide substrates by a simple chemical bath deposition technique to form a photoanode. It was seen that all the samples had a hexagonal wurtzite structure with compact rod morphology. From Tauc’s plot results, as compared to the undoped one (3.26 eV), the optical band gap of the ZnO:Mg samples increased to 3.32 eV for 4 at.% Mg-doping concentration and then decreased to 3.27 eV for 6 at.% Mg-doping. Photoluminescence results measured at 300 K indicated that ZnO nanorods had a ultra-violet peak with a wavelength of 382 nm, a blue peak at 420 nm and a deep level band in the range of 450–800 nm. Undoped and Mg-doped ZnO nanorods were subsequently used to realize ZnO-based dye-synthesized solar cells which exhibited the best power conversion efficiency of 0.144 % for 4 at.% ZnO:Mg sample.     

掺锶量对羟基磷灰石形貌及其荧光特性的影响

采用水热合成法制备了一系列具有不同微观形貌和荧光性能的掺锶羟基磷灰石粉末。通过X射线衍射、红外光谱、电子能谱、扫描电镜和荧光光谱表征样品的物相、形貌及荧光性能。结果表明: 所制备的样品形貌为1~ 3 μm的由微小晶粒聚集而成的球形颗粒, 但随着掺锶量的变化, 组成球形颗粒的微小晶粒形貌会出现较大的差异。 未掺锶羟基磷灰石晶粒形貌为短棒状, 随着掺锶量的增加, 微小晶粒逐渐变为片状而后转变为长棒状。样品能在紫外光(波长351 nm)激发下发出明亮的蓝色荧光(波长375~500 nm, 最强峰位432 nm), 且荧光强度随掺锶量增加先增强, 而后减弱, 在掺锶量为30mol%时达到最大。     

Nanoporous ZnO thin films deposited by electrochemical anodization: effect of UV light

Nanoporous ZnO thin films were deposited by electrochemical anodization of high purity Zn at room temperature using Pt counter electrode, calomel reference electrode and oxalic acid as the electrolyte. The crystallinity and the surface morphology were studied by X-ray diffraction (XRD) and Field emission scanning electron microscope (FESEM). The variation in molar concentration of oxalic acid during anodization had significant effect on the crystal size and the pore size particularly in the presence of UV light. An increase in room temperature band gap from 3.25 to 3.87 eV of ZnO film grown in 0.3 M oxalic acid indicates a quantum confinement effect and it was further confirmed by a blue shift of the photoluminescence (PL) spectra. A possible mechanism of the anodization and the photoetching in the presence of UV light of the ZnO film have been suggested.     

Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method

We report on the fabrication of high-quality GaN on soda-lime glass substrates, heretofore precluded by both the intolerance of soda-lime glass to the high temperatures required for III-nitride growth and the lack of an epitaxial relationship with amorphous glass. The difficulties were circumvented by heteroepitaxial coating of GaN on ZnO nanorods via a local microheating method. Metal-organic chemical vapor deposition of ZnO nanorods and GaN layers using the microheater arrays produced high-quality GaN/ZnO coaxial nanorod heterostructures at only the desired regions on the soda-lime glass substrates. High-resolution transmission electron microscopy examination of the coaxial nanorod heterostructures indicated the formation of an abrupt, semicoherent interface. Photoluminescence and cathodoluminescence spectroscopy was also applied to confirm the high optical quality of the coaxial nanorod heterostructures. Mg-doped GaN/ZnO coaxial nanorod heterostructure arrays, whose GaN shell layers were grown with various different magnesocene flow rates, were further investigated by using photoluminescence spectroscopy for the p-type doping characteristics. The suggested method for fabrication of III-nitrides on glass substrates signifies potentials for low-cost and large-size optoelectronic device applications.     

Effect of doping precursors on the optical properties of Ce-doped ZnO nanorods

We have investigated the use of different cerium precursors for fabrication of Ce doped ZnO nanorods by electrodeposition. ZnO nanorods fabricated with different Ce precursors had similar morphology, but very different optical properties. The influence of annealing in oxygen at different temperatures on the optical properties of Ce doped ZnO nanorods was also studied. The as-grown samples exhibited very different ratios of ultraviolet to visible (defect) emission. The relative contributions of green and orange-red emissions in the emission spectra of annealed samples were also dependent on the precursor used, indicating that the types and concentrations of native defects were dependent on the precursor used. To explore the possibility of applications of these nanorods in ZnO-based devices, nanorods were also grown on p-GaN substrates. Two different Ce precursors in this case resulted in different current-voltage curves, as well as different electroluminescence and photoluminescence spectra of the devices. Obtained results are discussed.     

Annealing effects on structural and optical properties of ZnMgO films grown by RF magnetron sputtering

Two sets of ZnMgO thin films have been fabricated on Si (111) substrates by RF magnetron sputtering, and were annealed at air atmosphere afterwards. The effects of annealing temperature and time on structural and optical properties were also characterized by X-ray diffraction, scanning electron microscopy and photoluminescence (PL) spectra. For samples fabricated at a lower temperature (200 °C, defined as samples I), the experimental results revealed that only hexagonal phase was observed for the films annealed at the temperature range from 180 to 420 °C, and the best crystal quality for the films was found at 240 °C. For samples synthesized at 220 °C (defined as samples II), the crystal structures exhibited anneal-time dependent. The experimental results revealed coexistence of hexagonal and cubic phase when they were annealed at a set temperature of 220 °C with the different annealing time, and the best one can be observed when the anneal time was 30 min. PL spectra showed blue shift for UV peak with the increase of annealing temperature for samples I, and the UV emission occurred red shift and then blue shift when the anneal time increased from 20 to 30 min for samples II.     

Influence of Co-doping on the structural, optical and magnetic properties of ZnO nanoparticles synthesized using auto-combustion method

In the present work, we have interested to understand the influence of cobalt doping on the various properties of ZnO nanoparticles, a series of samples were successfully synthesized using sol–gel auto-combustion method. The effects of Co doping on the structural and optical properties of ZnO:Co nanoparticles were investigated using X-ray diffraction (XRD), scanning electron microscopy, fourier transform infrared (FTIR) spectroscopy, ultraviolet–visible spectroscopy, photoluminescence spectroscopy and vibrating sample magnetometer (VSM). With the sensitivity of the XRD instrument, the structural analyses on the undoped and Co-doped ZnO samples reveal the formation of polycrystalline hexagonal-wurtzite structure without any secondary phase. FTIR spectra confirm the formation of wurtzite structure of ZnO in the samples. The optical absorption spectra showed a red shift in the near band edge which indicates that Co²⁺ successfully incorporated into the Zn²⁺ lattice sites. The room temperature PL measurements show a strong UV emission centered at 392 nm (3.16 eV), ascribed to the near-band-edge emissions of ZnO and defect related emissions at 411 nm (violet luminescence), 449 nm (blue luminescence) and 627 nm (orange-red luminescence), respectively. Magnetic study using VSM reveals that all the samples are found to exhibit room temperature ferromagnetism.     

ZnO nanotips and nanorods on carbon nanotube/Si substrates: anomalous p-type like optical properties of undoped ZnO nanotips

ZnO nanotips and nanorods were grown on screen-printed multi-walled carbon nanotube (MWCNT) films via thermal chemical vapor deposition at relative low growth temperatures of 400 and 500?°C. Uniform formation of ZnO nanotips and nanorods occurred on MWCNT-printed Si substrates, but were rarely observed on bare Si substrates at the same growth temperatures. In photoluminescence (PL) measurements, it was found that ZnO nanorods exhibit typical intrinsic optical properties, while ZnO nanotips revealed p-type like luminescence behavior. Acceptor-related emission bands originating from neutral acceptor-bound exciton, free-to-acceptor and donor-acceptor pair transitions are clearly observed in temperature-dependent PL spectra of ZnO nanotips.     

Structure and physical properties of undoped ZnO and vanadium doped ZnO films deposited by pulsed laser deposition

Undoped ZnO films were deposited using pulsed laser deposition technique on Si and glass substrates in different O2 partial pressures (ranging from 10(-5) mbar to 3 mbar) and substrate temperatures. When the substrate temperature is 500 degrees C and O2 partial pressure (pp) approximately 3 mbar, randomly oriented ZnO hexagons were observed on glass substrate, whereas, dense ZnO hexagonal rod like structures (diameter ranging from 200-500 nm) were observed on Si substrate. The photoluminescence (PL) characterization of ZnO film grown on Si exhibited an intense defect free narrow excitonic emission in the UV region (Full width half maximum (FWHM) approximately 11.26 nm) as compared to broad emission (FWHM approximately 57.06 nm) from that grown on glass. The parent film emission was found to shift from UV to blue region on doping ZnO with Vanadium.     

Magnesium content ratio effects of MgxZn1-xO seed layers on structural and optical properties of ZnO nanorods

ZnO nanorods were grown on MgxZn1-xO seed layers with different content ratio ranging from 0 to 0.3 by hydrothermal method. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out to investigate the effects of Mg content ratio for the MgxZn1-xO seed layers on the structural and optical properties of the ZnO nanorods. The surface morphology and structural properties of the MgxZn1-xO seed layers were changed by the Mg incorporation. However, the appearance, such as density, diameter, and shape, of the ZnO nanorods grown on the MgxZn1-xO seed layers was not changed significantly. The highest intensity ratio of the near-band-edge emission (NBE) to deep-level emission (DLE) and the narrowest full width at half maximum (FWHM) of the NBE peaks, indicating improvement in the crystallinity and luminescent properties of the ZnO crystals, were observed in the ZnO nanorods grown on the MgxZn1_xO seed layers with the content ratio of the 0.05.     

Hydrothermal controllable synthesis to convert ZnO hexagonal nanotubes to hexagonal nanorods and their photocatalytic application

Zinc oxide (ZnO) thick films were analyzed by high-resolution X-ray diffraction (HR-XRD), field emission scanning electron microscopy, and photoluminescence (PL) spectroscopy at room temperature. The films were grown on glass substrates using different molar concentrations of aqueous solution (0.02, 0.04, and 0.06 M) via a simple hydrothermal method. This method uses glass bottles with rubber caps as reactor vessels (100 mL) and, thus, is classified as a green chemistry technique. Hexahedral zinc nitrate (Zn (NO₃)₂·6H₂O), hexamethylenetetramine (C₆H₁₂N₄), and deionized water were used as starting materials and were reacted in the presence of heat. HR-XRD measurements confirmed that the diffraction peaks of the polycrystalline structure films can be assigned to the hexagonal-shaped wurtzite ZnO. In addition, the PL spectra show that the integrated intensity decreases with the increase in ZnO content. The SEM images also revealed the existence of hexagonal ZnO nanotubes in the 0.02 M sample, and these nanotubes are gradually converted into hexagonal nanorods with the increase in ZnO content. Moreover, the photocatalytic activity of both nanostructures was measured based on the degradation of methyl blue (MB) by using ultraviolet light (λ = 366 nm). Results showed that the ZnO nanotubes degraded MB more effectively than the nanorods.     

Effects of thermal annealing in oxygen plasma for buffer layers on properties of ZnO thin films

ZnO thin films with ZnO buffer layers were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on p-type Si(100) substrates. Before the growth of the ZnO thin films, the ZnO buffer layers were deposited on the Si substrates for 20 minutes and then annealed at the different substrate temperature ranging from 600 to 800 degrees C in oxygen plasma. The structural and optical properties of the ZnO thin films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and room-temperature (RT) photoluminescence (PL). A narrower full width at half maximum (FWHM) of the XRD spectra for ZnO(002) and a larger grain are observed in the samples with the thermal annealed buffer layers in oxygen plasma, compared to those of the as-grown sample. The surface morphology of the samples is changed from rugged to flat surface. In the PL spectra, near-band edge emission (NBEE) at 3.2 eV (380 nm) and deep-level emission (DLE) around 1.77 to 2.75 eV (700 to 450 nm) are observed. By increasing the annealing temperatures up to 800 degrees C, the PL intensity of the NBEE peak is higher than that of the as-grown sample. These results imply that the structural and optical properties of ZnO thin films are improved by the annealing process.     

Fabrication and properties of sulfur (S)-doped ZnO nanorods

Highly-aligned sulfur (S)-doped ZnO nanorods have been grown using the hydrothermal approach at 90 °C for 2 h onto quartz substrate pre-coated with ZnO seed layer deposited by radio frequency magnetron sputtering system. The morphology, crystal structure, and transmittance of the S-doped ZnO nanorods grown with varied sulfur concentration have been investigated. The scanning electron microscope images showed that the S-doped ZnO nanorods dimension is affected by sulfur doping. The nanorods doped with sulfur concentration of ~1, 1.5, and 2 at.% found to show nanorods with an average diameter of ~130, 170, and 270 nm respectively. X-ray diffraction measurements revealed that the sulfur-doped ZnO nanorods have hexagonal-wurtzite crystal structure and grown vertically in the (002) plane along c-axis perpendicular to the substrate. The nanorods doped with 1 at.% sulfur showed ~70 % transmittance in the visible region while the nanorods doped with 2 at.% sulfur showed transmittance of ~77 % and exhibited blue shift in the fundamental absorption edge.