Influence of quantum confinement on magnetic properties of Fe/Mo/Fe and Fe/Ta/Fe thin-film systems

The magnetic properties of Fe/NML/Fe thin-film structures with Mo and Ta non-magnetic layers (NMLs) grown by magnetron sputtering have been studied using magnetooptical techniques. It is established that the saturation field (H _S) of the samples exhibits oscillations as a function of the NML thickness (t _NML) and the period of oscillations depends on the thickness of iron layers. This behavior of H _S(t _NML) is explained by the oscillatory character of exchange coupling between the ferromagnetic layers.     

Superconducting properties of Fe/V/Fe sandwiches

A study has been made of the superconducting properties of Fe/V/Fe sandwiches with V thickness ranging from 153 AP (atomic planes) to 5048 AP. All 20 samples studied were prepared in a single run. At zero magnetic field, the suppression of the transition temperature follows an inverse square dependence on the thickness, implying a strong pair-breaking effect in the Fe layers. The upper critical field data cross over smoothly from the 2D regime to the 3D regime with increasing V thickness. A comparison with some thin-film theories is given.     

Fe3Si formation in Fe–Si diffusion couples

Two different types of bulk diffusion couples for the Fe–Si system, i.e. Fe/Si and Fe/Fe3Si, have been studied, with emphasis placed on the formation and growth of Fe3Si. Results indicate that Fe3 Si forms initially in Fe/Si couples, followed by FeSi and then FeSi2. Fe3Si has a wide range of stoichiometry, from 10–25 at% Si; however, only stoichiometric Fe3Si appeared in Fe3Si diffusion layers of Fe/Si couples. Off-stoichiometric Fe3Si formed in Fe3Si/Fe couples. The free energy of Fe3Si and Fe–Si affinity are used to explain Fe3Si formation behaviour and the atomic diffusion mechanism in the Fe3Si lattice. © 1998 Kluwer Academic Publishers     

Exchange couplings between two Fe layers in Fe/Al/Fe/Ni-Fe/NiO sandwiches

Exchange couplings between two Fe layers have been investigated in polycrystalline Fe/Al/Fe/Ni-Fe/NiO and Fe/Al/Fe/Ni-Fe sandwiches. Linear exchange couplings between the two Fe layers were strong and ferromagnetic when the thickness of the Al spacer was between 0.7 and 2.2 nm. We observed biquadratic exchange couplings (90 degree couplings) when the thickness of the Al spacer was between 2.5 and 4.0 nm.     

Deposition and Magnetic Properties of Fe3O4/Fe/Fe3O4Tri-layer Films

1. IntroductionIron oxides include several crystalline forms:hematite (or-FeZO3), magnetite (Fe3O4), maghemite(7-Felon) and wustite (FeO). They have interesting structural and magnetic properties, and are practically important in magnetic and electronic applications. The strongly ferrimagnetic 7--FeZO3 phaseearned much attention due to their applications asrecording media. The attainment of 7-FeZO3 involves complicated processing[1]. In our previousstudies, high coercivity 7-FeZO3, Fe3…     

Fe—Mn和Fe—Mn—Si粉末混合物的机械合金化

对Ｆｅ－２４Ｍｎ，Ｆｅ－２４Ｍｎ－６Ｓｉ成分的粉末混合物进行了机械球磨，并对不同时间的球磨样品进行了Ｘ射线衍射（ＸＲＤ）和Ｍｏ¨ｓｂａｕｅｒ谱测量。结果表明，球磨使得Ｆｅ、Ｍｎ、Ｓｉ在原子尺度上发生了混合，形成了顺磁性、面心立方结构的Ｆｅ－２４Ｍｎ或Ｆｅ－２４Ｍｎ－６Ｓｉ纳米晶合金，这是Ｆｅ、Ｍｎ或Ｓｉ原子由颗粒表面到体内扩散的结果。球磨６７ｈ以后结构未发生变化，表明形成的是一种热力学亚稳结构，这个结果与Ｆｅ－Ｍｎ和Ｆｅ－Ｍｎ－Ｓｉ合金在室温下的相图结构明显不同。     

Interfacial interaction in Fe/MgO/Fe magnetic tunneling junctions

We present a study on interfacial structures and tunneling magnetoresistance (TMR) in Fe/MgO/Fe junctions using a MgO(111) film with {100} facets. It is shown using X-ray photoelectron spectroscopy that a FeO layer occurs at MgO/Fe rather than Fe/MgO interface, which could be used to tune the TMR effect. At the Fe/MgO interface, such a change in electronic structure is attributed to the band bending associated with a change in thickness of Fe films. The present study provides a new understanding on the Fe/MgO/Fe interfacial behavior and metal/oxide barriers involving electron transport.     

The effect of Fe0/Fe2+/Fe3+ on nitrobenzene degradation in the anaerobic sludge

The influence of Fe(0)/Fe(2+)/Fe(3+) on the nitrobenzene (NB) degradation in the anaerobic granular sludge was studied and the results demonstrated that: adding iron powder into the anaerobic sludge could exert an accelerative effect on the NB degradation and the degradation rate was faster than that by using iron or the anaerobic sludge alone. The external addition of Fe(2+)/Fe(3+) exhibited different influences on the NB degradation depending on the concentrations of Fe(2+)/Fe(3+) and the solution's pH. When Fe(2+)/Fe(3+) are less than 100 mg/L at pH 6, Fe(2+)/Fe(3+) inhibited the NB degradation slightly, and when Fe(2+)/Fe(3+) was 100-200 mg/L, the NB degradation was enhanced. When pH was shifted to 9, Fe(2+) of lower than 100 mg/L promoted the NB degradation, and 200 mg/L Fe(2+) inhibit the NB degradation. The synergism of combined use of iron and the anaerobic sludge in treating NB wastewater was proposed, and adjusting the concentrations of Fe(2+)/Fe(3+) in the anaerobic sludge according to the pH of the wastewater could be an effective method to obtain a high removal rate of NB.     

纳米Fe_3O_4/Fe复合磁流变液的流变性

用化学共沉淀法合成了纳米Fe3O4粒子,平均二次粒径为51.2nm,比表面积为109.6m2/g。以合成的纳米Fe3O4粒子与羰基铁粉复合配制了纳米复合磁流变(MR)液,并测定了其流变性。结果显示:纳米复合MR液对温度比较稳定;复合MR液在接近零场的低磁场强度下表现为牛顿流体,随着磁场强度提高转变为非牛顿流体;反复加载或撤除磁场,具有"开/关"特性,响应迅速,施加磁场时的响应时间Δt约为50～100ms,撤退磁场时约为100～150ms。     

Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

Following predictions by first-principles theory of a huge tunnel magnetoresistance (TMR) effect in epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs), measured magnetoresistance (MR) ratios of about 200% at room temperature (RT) have been reported in MgO-based epitaxial MTJs. Recently, a MR ratio of about 600% has been reported at RT in MgO-based MTJs prepared by magnetron sputtering, using amorphous CoFeB as the ferromagnetic electrode. These MTJs show great potential for application in spintronic devices. Fully epitaxial MTJs are excellent model systems that enhance our understanding of the spin-dependent tunneling process as the interface is well defined and can be fully characterized. Both theoretical calculations and experimental results clearly indicate that the interfacial structure plays a crucial role in the coherent tunneling across a single crystal MgO barrier, especially in epitaxial MgO-based MTJs grown by molecular beam epitaxy (MBE). Surface X-ray diffraction, Auger electron spectroscopy, X-ray absorption spectra, and X-ray magnetic circular dichroism techniques have been reported previously for interface characterization. However, no consistent viewpoint has been reached on the interfacial structures (such as FeO layer formation at the bottom Fe/MgO interface), and it is still an open issue. In this article, our recent studies on the interface characterization of MgO-based epitaxial MTJs by X-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and spin-dependent tunneling spectroscopy, will be presented.     

使用支撑液膜从Fe3+/Cu2+溶液中选择分离Fe3+的研究(Ⅰ) 液液萃取实验

支撑液膜在水溶液金属离子的分离中有着独特的优势.报道了从Fe3+/Cu2+溶液中选择分离Fe3+液/液萃取研究结果.水相为Fe3+/Cu2+硫酸溶液,萃取相为正癸醇(n-decanol),载体为二(2-乙基己基)磷酸(D2EHPA).实验研究了溶液相中硫酸浓度以及有机相中载体D2EHPA浓度对金属离子萃取速率的影响.研究发现水溶液的酸浓度对Fe3+的萃取影响较明显,而对Cu2+的萃取影响很小.在两相界面处Fe3+与D2EHPA的反应速度比Cu2+快很多.Fe3+、Cu2+与D2EHPA的络合物在有机相中的扩散速度都较慢,但是Fe3+与D2EHPA的络合物的界面反应速度比络合物的扩散速度快.有机相中载体浓度对金属离子萃取速率的影响也很明显.液液萃取研究结果显示,在使用支撑液膜进行铁离子选择分离时,可以通过改变溶液相酸的浓度,有机相中载体浓度,或者通过缩短分离时间来提高选择率.     

Anomalous Transport Properties in Fe Intercalation Compound Fe x TiSe2 Single Crystals

The transport and magnetic properties of single-crystalline Fe-intercalation-compound Fe _x TiSe₂ have been compared with the transport properties of single-crystalline Ti-self-intercalation-compound Ti _x TiSe₂. At low concentration of intercalated guest atoms, Fe _x TiSe₂ exhibits carrier localization behavior without magnetic ordering, while Ti _x TiSe₂ shows an itinerant behavior. The superstructure and the carrier localization observed in Fe _x TiSe₂ single crystals simultaneously disappear at the critical concentration x _c～0.07, which agrees well with theoretical value based on a percolation theory. Fe intercalation compounds show paramagnetism and nonexistence of magnetism is attributed to the large distance between guest Fe atoms. We discuss the effect of guest intercalation on the stability of superstructure formed in the host.     

Remanence and coercivity in exchange-coupled amorphous Nd50Fe50/Fe multilayers

The hysteresis behavior of sputteredNd₅₀Fe₅₀/Fe multilayers consisting of alternate layers of magnetically hard Nd₅₀Fe₅₀ and sof α-Fe phases with a bilayer thickness in the range of 20–40 nm has been investigated. Samples prepared at 5 nTorr Ar gas pressure showed a uniform single-phase hysteresis loop, with increased reduced remanence (0.6) for Fe layer thickness under 7.5 nm, which is attributed to a strong exchange coupling between the hard Nd₅₀Fe₅₀ and soft α-Fe. Samples sputtered at higher gas pressures showed smooth loops for larger critical Fe thickness, with a higher coercivity and a lower reduced remanence.     

Fe/GaN、Fe3N/GaN的生长及其性能研究

应用金属有机物化学气相沉积(MOCVD)方法,在c轴取向的GaN上生长出Fe颗粒薄膜以及Fe3N薄膜。应用XRD、AFM、XPS以及SQUID等技术对薄膜的结构、表面形貌以及磁学性能等性质进行了分析,结果表明六方结构的GaN上生长的Fe为立方结构,且以Fe(110)//GaN(0002)晶面以及Fe[001]//GaN[11■0]轴的方式存在,而生长的Fe3N为六方结构,且以Fe3N(0002)//GaN(0002)晶面以及Fe3N[11■0]//GaN[1ī00]轴的方式存在。同时,磁学分析表明,平行于薄膜方向为易磁化方向,垂直于薄膜方向为难磁化方向。     

Fe/Al_2O_3/Fe隧道结的巨磁电阻效应

研究了Fe(2 0 0℃退火 ) /Al2 O3/Fe多层膜隧道结的巨磁电阻效应 ,在室温下获得了 5.89%的巨磁电阻效应 ,并且测量了样品的伏安曲线 ,证明了隧道效应的存在。     

Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

The tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) is the key to developing magnetoresistive random-access-memory (MRAM), magnetic sensors and novel programmable logic devices. Conventional MTJs with an amorphous aluminium oxide tunnel barrier, which have been extensively studied for device applications, exhibit a magnetoresistance ratio up to 70% at room temperature. This low magnetoresistance seriously limits the feasibility of spintronics devices. Here, we report a giant MR ratio up to 180% at room temperature in single-crystal Fe/MgO/Fe MTJs. The origin of this enormous TMR effect is coherent spin-polarized tunnelling, where the symmetry of electron wave functions plays an important role. Moreover, we observed that their tunnel magnetoresistance oscillates as a function of tunnel barrier thickness, indicating that coherency of wave functions is conserved across the tunnel barrier. The coherent TMR effect is a key to making spintronic devices with novel quantum-mechanical functions, and to developing gigabit-scale MRAM.