High performance humidity sensing properties of indium tin oxide (ITO) thin films by sol–gel spin coating method

The tin doped indium oxide (ITO) thin films prepared by sol–gel spin coating method with In(NO₃)3H₂O and SnCl₄·5H₂O as indium and tin sources respectively is presented. The as deposited samples were annealed at 500 °C for 2 h in order to improve the crystallinity. The structural, morphological and optical properties of the films were analysed by using X-ray diffraction, scanning electron microscope (SEM), UV–Vis transmission spectra and photoluminescence, spectra analysis. The SEM images ensure the uniform and smooth surface of the as prepared and annealed film. The optical transmittance of more than 85 % has been observed in the UV–Vis region with a band gap of 3.91 and 3.73 eV for the as prepared and annealed films of ITO respectively. The PL spectra reveal that the optical properties were significantly improved due to the annealing effect. The annealed film shows high sensitivity for humidity approximately two order changes in the resistance and the sensitivity increases for different relative humidity from 10 to 90 % due to the physisorption between the water molecules and the surface of the thin films.     

Influence of Fe dopant concentration and annealing temperature on the structural and optical properties of ZnO thin films deposited by sol–gel method

Nanostructured Fe doped ZnO thin films were deposited onto glass substrates by sol–gel spin coating method. Influence of Fe doping concentration and annealing temperature on the structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV–Vis spectroscopy and photoluminescence (PL) measurements. XRD analysis showed that all the films prepared in this work possessed a hexagonal wurtzite structure and were preferentially oriented along the c-axis. Pure ZnO thin films possessed extensive strain, whereas Fe doped films possessed compressive strain. In the doped films, least value of stress and strain was observed in the 0.5 at.% Fe doped thin film, annealed at 873 K. Average crystallite size was not significantly affected by Fe doping, but it increased from 15.57 to 17.79 nm with increase in annealing temperature from 673 to 873 K. Fe ions are present in +3 oxidation state as revealed by XPS analysis of the 0.5 at.% Fe doped film. Surface morphology is greatly affected by changes in Fe doping concentration and annealing temperature which is evident in the SEM images. The increase in optical band gap from 3.21 to 3.25 eV, with increase in dopant concentration was attributed to Moss–Burstein shift. But increase in annealing temperature from 673 to 873 K caused a decrease in band gap from 3.22 to 3.20 eV. PL spectra showed emissions due to excitonic combinations in the UV region and defect related emissions in the visible region in all the investigated films.     

Formation and properties of cadmium sulfide buffer layer for CIGS solar cells grown using hot plate bath deposition

In the present study, cadmium sulfide (CdS) thin films were deposited on different substrates [soda glass, fluoride doped tin oxide, and tin doped indium oxide (ITO) coated glass] by a hot plate method. To control the thickness and the reproducibility of the sample production, the thin films were coated at different temperatures and deposition times. The CdS thin films were heated at 400 °C in air and forming gas (FG) atmosphere to investigate the effect of the annealing temperatures. The thickness of the samples, measured by ellipsometry, could be controlled by the deposition time and temperature of the hot plate. The phase formation and structural properties of CdS thin films were studied by X-ray diffraction and scanning electron microscopy, whereas the optical properties were obtained by UV–vis spectroscopy. A hexagonal crystal structure was observed for CdS thin films and the crystallinity improved upon annealing. The structural and optical properties of CdS thin films were also enhanced by annealing at 400 °C in FG atmosphere (95 % N₂, 5 % H₂). The optical band gap was changed from 2.25 to 2.40 eV at different annealing temperatures and gas atmospheres. A higher electrical conductivity, for the sample annealed at FG, was noticed. The samples deposited on ITO and annealed in FG atmosphere showed the best structural and electrical properties compared to the other samples. CdS thin films can be widely used for application as a buffer layer for copper–indium–gallium–selenide solar cells.     

Quantum dot sensitized aluminium doped and copper doped ZnO nanostructure based solar cells

Aluminium doped and copper doped ZnO nanostructured thin films have been prepared using simple solgel dip coating method. The X-ray diffraction pattern results revealed that the prepared Al and Cu doped ZnO sample exhibits hexagonal structure. The average crystallite size of pure ZnO, Al doped ZnO and Cu doped ZnO samples were found to be 29, 26 and 15 nm, respectively. The optical band gap of ZnO, Al doped ZnO and Cu doped ZnO thin films was found to be 3.27, 3.29, and 3.20 eV respectively. Solar cells have been fabricated using CdS quantum dots sensitized ZnO nanostructured thin films and the efficiency of the fabricated Al doped and Cu doped ZnO solar cells were 1.37 and 1.29 % respectively.     

Structural,optical and magnetic properties of Ba and Ni doped CdS thin films prepared by spray pyrolysis method

Pure, Barium and Nickel doped cadmium sulphide (CdS) thin films have been coated on glass substrates at 400?°C by spray pyrolysis technique. The prepared CdS and doped CdS thin films were analysed by various measurements such as X-ray diffraction (XRD), SEM, optical and Vibrating Sample Magnetometer (VSM). X-ray diffraction measurements show that the coated pure, Ba and Ni-doped CdS thin films belong to the cubic crystal structure with orientation preferentially along (111) direction. The average crystallite size of pure, Ba and Ni doped CdS thin films were determined as 31, 33 and 45 nm, respectively. The average dislocation density (δ) and stacking fault (SF) of pure, Ba and Ni doped CdS thin films were also determined. The surface morphology and elemental analysis of the thin films were determined by scanning electron microscopy and energy dispersive X-ray spectrum (SEM with EDAX). It is observed that the optical energy bandgap has been decreased from 2.43 to 2.1 eV due to the doping Ba. The luminescence spectrum shows a strong emission peak at 517 nm in the case of pure CdS thin film and a meager red shift has been observed due to the doping. VSM studies were employed to study the magnetic behaviour of Ba and Ni doped CdS thin films.     

Enhancement of photosensitivity by annealing in Bi2S3 thin films grown using SILAR method

Bi₂S₃ thin films were grown by successive ionic layer adsorption and reaction method (SILAR) onto the glass substrates at room temperature. The as prepared thin film were annealed at 250 °C in air for 30 min. These films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrical measurement systems. The X-ray diffraction patterns reveal that Bi₂S₃ thin film have orthorhombic crystal structure. SEM images showed uniform deposition of the material over the entire glass substrate. The optical energy band gap observed to be decreased from 1.69 to 1.62 eV for as deposited and annealed films respectively. The I–V measurement under dark and illumination condition (100 W) show annealed Bi₂S₃ thin film gives good photoresponse as compared to as deposited thin film and Bi₂S₃ thin film exhibits photoconductivity phenomena suggesting its useful in sensors device. The thermo-emf measurements of Bi₂S₃ thin films revealed n-type electrical conductivity.     

Lanthanum concentration dependence of electrical properties in tin oxide thin films

Lanthanum doped tin oxide thin films were prepared on boron-silicon glass substrates by spray pyrolysis. Lanthanum concentration was varied from 0 to 1.0 wt%. The microstructures, sheet resistance and thermal stabilities of the lanthanum doped tin oxide thin films have been investigated in order to determine the role of this dopant on electrical properties. X-ray diffraction (XRD) result shows the deposited thin film is mainly rutile SnO₂. And atomic force microscopy (AFM) reveals that the thin film has smooth surface with no cracks and defects. And it exhibits a typical bimodal grain size distribution with an average grain size of 95 nm. The sheet resistances of the thin films have a complex dependence on the lanthanum concentration. With increasing lanthanum concentration, the sheet resistances of tin oxide thin films were slightly increased and then abruptly decreased. Moreover, when the lanthanum concentration of 0.5 wt% was reached, the specimen exhibits excellent electrical properties. Because of its effectiveness in improving homogeneity of operating surface temperature and thermal stability, lanthanum appears to be an attractive additive for the tin oxide thin films.     

Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering

This study probes the effect of annealing temperature on electrical, optical and microstructural properties of indium tin oxide (ITO) films deposited onto soda lime glass substrates by conventional direct current (DC) magnetron reactive sputtering technique at 100 watt using an ITO ceramic target (In₂O₃:SnO₂, 90:10 wt%) in argon atmosphere at room temperature. The films obtained are exposed to the calcination process at different temperature up to 700 °C. X–ray diffractometer (XRD), ultra violet-visible spectrometer (UV–vis) and atomic force microscopy (AFM) measurements are performed to characterize the samples. Moreover, phase purity, surface morphology, optical and photocatalytic properties of the films are compared with each other. The results obtained show that all the properties depend strongly on the annealing temperature. XRD results indicate that all the samples produced contain the In₂O₃ phase only and exhibit the polycrystalline and cubic bixbite structure with more intensity of diffraction lines with increasing the annealing temperature until 400 °C; in fact the strongest intensity of (222) peak is obtained for the sample annealed at 400 °C, meaning that the sample has the greatest ratio I ₂₂₂/I ₄₀₀ and the maximum grain size (54 nm). As for the AFM results, the sample prepared at 400 °C has the best microstructure with the lower surface roughness. Additionally, the transmittance measurements illustrate that the amplitude of interference oscillation is in the range from 78 (for the film annealed at 400 °C) to 93 % (for the film annealed at 100 °C). The refractive index, packing density, porosity and optical band gap of the ITO thin films are also evaluated from the transmittance spectra. According to the results, the film annealed at 400 °C obtains the better optical properties due to the high refractive index while the film produced at 100 °C exhibits much better photoactivity than the other films as a result of the large optical energy band gap.     

Effect of different solvents on the key structural,optical and electronic properties of sol–gel dip coated AZO nanostructured thin films for optoelectronic applications

Transparent conducting aluminum (i.e. 2 at.%) doped zinc oxide (AZO) thin films were prepared on glass substrates by sol–gel dip coating technique using different solvents. This inexpensive dip coating method involves dipping of substrate consecutively in zinc solution and tube furnace for required cycles. Prepared films were investigated by XRD, SEM, PL, Raman spectroscopy optical and electrical studies. From the XRD studies, it confirmed the incorporation of aluminum in ZnO lattice. The prepared samples are polycrystalline nature, and these films reveal hexagonal wurtzite arrangement with (002) direction. The structural parameters such as crystallite size, dislocation density, micro strain, texture coefficient and lattice constant were investigated. SEM study showed well defined smooth and uniformed ganglia shaped grains are regularly distributed on to the entire glass substrate without any pinholes and cracks, and the average grain size is 75 nm. From the optical studies, the observed highest transmittance is 93% in the visible range and the band gap (E_g) is 3.26 eV. Room temperature PL spectra exhibited strong UV emission peak located at 386 nm for all the films. The electrical properties of the AZO thin films were studied by Hall-Effect measurements and found as n-type conductivity with high carrier concentrations (n), 2.76?×?10¹⁹ cm^??3 and low resistivity (ρ), 7.56?×?10^??3 Ω cm for the film deposed using methanol as solvent.     

Structural,morphological, optical and electrical properties of CdS thin films simultaneously doped with magnesium and chlorine

CdS thin films simultaneously doped with Mg and Cl at different doping concentrations (0, 2, 4, 6 and 8 at%) were prepared on glass substrates by spray pyrolysis technique using perfume atomizer at 400 °C. The effect of Mg and Cl doping concentration on the structural, morphological, optical and electrical properties of the deposited films were investigated using X-ray diffraction (XRD), scanning electron microscopy, UV–Vis spectroscopy and dc electrical measurements, respectively. XRD analysis showed that the undoped and doped CdS films exhibit hexagonal structure with a preferential orientation along the (0 0 2) plane. The 2θ angle position of the (0 0 2) peak of the doped films was shifted towards a higher angle with increasing Mg and Cl concentration. The UV–Vis–NIR absorption spectra of Mg and Cl doped thin films are measured and classical Tauc approach was employed to estimate their band gap energies. The increase in band gap energy from 2.46 to 2.73 eV with the reduction in crystallite size supports quantum size effect. Raman spectra implied that more defects existed in the doped samples. Electrical studies showed that all the films have resistivity in the order of 10¹ Ω-cm and the CdS film with 6 at% Mg and Cl concentration has a minimum resistivity of 1.332 × 10¹ Ω-cm.     

Structural transition of ZnO thin films produced by RF magnetron sputtering at low temperatures

Zinc oxide (ZnO) thin films were prepared using reactive radio-frequency magnetron sputtering of a pure metallic zinc target onto glass substrates. The evolution of the surface morphology and the optical properties of the films were studied as a function of the substrate temperature, which was varied from 50 to 250 °C. The surface topography of the samples was examined using atomic force microscopy (AFM), and their optical properties were studied via transmittance measurements in the UV–Vis–NIR region. DRX and AFM analyses showed that the surface morphology undergoes a structural transition at substrate temperatures of around 150 °C. Actually, at 50 °C the formation of small grains was observed while at 250 °C the grains observed were larger and had more irregular shapes. The optical gap remained constant at ~3.3 eV for all films. In the visible region, the average optical transmittance was 80 %. From these results, one can conclude that the morphological properties of the ZnO thin films were more greatly affected by the substrate temperature, due to mis-orientation of polycrystalline grains, than were the optical properties.     

Characterization of titania thin films grown by dip-coating technique

A dip-coating technique was employed to prepare anatase phase of titania thin films. Fluorine doped tin oxide substrates were used to prepare titania thin films. The samples were annealed at 550 °C for 18 h. X-ray diffraction results revealed the amorphous and anatase phases of TiO₂ for as-synthesized and annealed samples, respectively. The crystallite size of anatase TiO₂ thin films was almost 25 nm for annealed samples. UV–visible confirmed the energy band gap 3.86 and 3.64 eV for as-prepared and calcinated titania thin films. The reduction in the energy band gap could be due to the change in crystallization and agglomeration of small grains after calcination. The morphology of the prepared films was investigated by field emission scanning electron microscopy which demonstrated the agglomeration of spherical particles of TiO₂ with average particle size of about 30 nm. The molecular properties (chemical bonding) of the samples were investigated by means of Fourier Transform Infrared (FTIR) spectroscopy. FTIR analysis exhibited the formation of titania, functional group OH, hydroxyl stretching vibrations of the C–OH groups, bending vibration mode of H–O–H, alkyl C–H stretch, stretching band of Ti–OH, CN asymmetric band stretching, and C=O saturated aldehyde.     

Effect of annealing temperature on structural,optical and humidity sensing properties of indium tin oxide (ITO) thin films

Tin doped indium oxide (ITO) thin films were prepared by sol–gel spin coating method with In (NO₃)·3H₂O and SnCl₄·5H₂O as indium and tin sources, respectively. The as deposited samples were annealed at various temperature such as, 300, 400, 500 and 600?°C for 2 h in ambient atmosphere. The grown ITO thin films are polycrystalline in nature with cubic structure of In₂O₃ with the space group La3 and the results are in good agreement with the standard JCPDS data (card no#06-0416). In addition crystalline size increases with increasing annealing temperature from 25 to 55 nm. Polycrystalline with uniform smooth surface was observed by SEM micrographs. The optical band gap energy was found to be decreased from 3.85 to 3.23 eV as the annealing temperature is increased from 300 to 600?°C. The humidity sensing performance (high sensitivity and fast response time) was significantly improved for 600?°C thin films samples, which is probably due to smaller energy band gap and physisorption between the water molecules and the surface of the thin films. The films were further characterized by PL and EDS analysis. The effect of temperature on humidity sensing mechanism of ITO thin films is also discussed.     

Properties of electrochemically deposited CdTe thin films: annealing effect

CdTe thin film have been deposited onto stainless steel and fluorine doped tin oxide coated glass substrates from aqueous acidic bath using electrodeposition technique. The different preparative parameters, such as deposition time, bath temperature, pH of the bath have been optimized by photoelectrochemical (PEC) technique get good quality photosensitive material. The deposited films are annealed at different temperature in presence of air. Annealing temperature is also optimized by PEC technique. The film annealed at 200 °C showed maximum photosensitivity. Different techniques have been used to characterize the as deposited and also annealed (at 200 °C) CdTe thin film. The X-ray diffraction (XRD) analysis showed the polycrystalline nature and a significant increase in the XRD peak intensities is observed for the CdTe films after annealing. Optical absorption shows the presence of direct transition with band gap energy 1.64 eV and after annealing it decreases to 1.50 eV. Energy dispersive analysis by X-ray study for the as-deposited and annealed films showed nearly stoichiometric compound formation. Scanning electron microscopy reveals that spherically shaped grains are more uniformly distributed over the surface of the substrate for the annealed CdTe film. Photovoltaic output characteristics and spectral response of the annealed film have been carried. The fill factor and power conversion efficiency (η) of the cell are found to be 71 and 3.89 %.     

Effect of cadmium oxide incorporation on the microstructural and optical properties of pulsed laser deposited nanostructured zinc oxide thin films

CdO doped (doping concentration 0, 1, 3 and 16 wt%) ZnO nanostructured thin films are grown on quartz substrate by pulsed laser deposition and the films are annealed at temperature 500 °C. The structural, morphological and optical properties of the annealed films are systematically studied using grazing incidence X-ray diffraction (GIXRD), energy dispersive X-ray analysis (EDX), scanning electron microscopy (SEM), atomic force microscopy (AFM), Micro-Raman spectra, UV–vis spectroscopy, photoluminescence spectra and open aperture z-scan. 1 wt% CdO doped ZnO films are annealed at different temperatures viz., 300, 400, 500, 600, 700 and 800 °C and the structural and optical properties of these films are also investigated. The XRD patterns suggest a hexagonal wurtzite structure for the films. The crystallite size, lattice constants, stress and lattice strain in the films are calculated. The presence of high-frequency E₂ mode and the longitudinal optical A₁ (LO) modes in the Raman spectra confirms the hexagonal wurtzite structure for the films. The presence of CdO in the doped films is confirmed from the EDX spectrum. SEM and AFM micrographs show that the films are uniform and the crystallites are in the nano-dimension. AFM picture suggests a porous network structure for 3% CdO doped film. The porosity and refractive indices of the films are calculated from the transmittance and reflectance spectra. Optical band gap energy is found to decrease in the CdO doped films as the CdO doping concentration increases. The PL spectra show emissions corresponding to the near band edge (NBE) ultra violet emission and deep level emission in the visible region. The 16CdZnO film shows an intense deep green PL emission. Non-linear optical measurements using the z-scan technique indicate that the saturable absorption (SA) behavior exhibited by undoped ZnO under green light excitation (532 nm) can be changed to reverse saturable absorption (RSA) with CdO doping. From numerical simulations the saturation intensity (I_s) and the effective two-photon absorption coefficient (β) are calculated for the undoped and CdO doped ZnO films.     

The effect of annealing temperature on the properties of ZnO films with preferential nonpolar plane orientation by SSCVD

The effect of annealing temperature on the structural morphology and optical properties of preferential nonpolar plane orientated ZnO thin films on Si (100) substrates by single source chemical vapor deposition (SSCVD) was investigated. The structural and morphological properties of the films were characterized by X-ray diffraction (XRD) and atomic force microscope (AFM) measurements respectively. All the ZnO films annealed at the selected temperatures (500–800 °C) exhibiting a–b axis orientation, but with preferential nonpolar (100) plane orientation. It is found that the intensity of the (100) peak depends strongly on the annealing temperature, while that of (101) peak shows a variation in a very small scale. The surface morphology demonstrates that the film is of the uniform grains except for that annealed at 800 °C, for the aggregation of the ZnO particles occurred. The film shows a superior smooth surface annealed at 600 and 700 °C in comparison with other thermal annealed. It is also found from the photoluminescence(PL) measurements that the film annealed at 700 °C exhibits the lowest deep-level emission(DLE). However, the intensity of the near band edge emissions (NBE) and DLE show a wavelike variation, which are consistent to the variation of the intensity of (100) peak in the XRD results.     

Liquid phase deposition of BiFeO3 thin film on self-assembly monolayers

BiFeO₃ (BFO) thin films were successfully deposited on self-assembled monolayers (SAMs) by the liquid phase deposition method. The measurement of contact angle and atomic force microscopy (AFM) showed that after immersion in an octadecyl trichlorosilane (OTS) solution for 30 min, the surface of the substrate was covered with a smooth, hydrophobic layer. After UV irradiation for 30 min, the smooth hydrophobic layer changed into a serrated hydrophilic layer. This indicated that the OTS-SAMs played an active role as chemical templates in controlling nucleation and growth of the BFO thin film. The phase and the surface topography of the BFO film were investigated respectively by X-ray diffraction, Field emission scanning electron microscopy (FE-SEM) and AFM. The results showed that the optimum annealing temperature and deposition temperature for preparing the BFO thin film were 600 and 70 °C respectively. The films were annealed at 600 °C for 2 h. As-prepared thin films were smooth, uniform, and dense with the height varying between 20 and 100 nm. Moreover, patterned BFO nanoarrays were prepared.     

Effect of annealing time on the structural,optical and electrical characteristics of DC sputtered ITO thin films

Using an Indium tin oxide (ITO) ceramic target (In₂O₃:SnO₂, 90:10 wt%), ITO thin films were deposited by conventional direct current magnetron sputtering technique onto glass substrates at room temperature. The obtained ITO films were annealed at 400 °C for different annealing times (1, 2, 5, 7, and 9 h). The effect of annealing time on their structural, optical and electrical properties was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microcopy (AFM), ultra violet–visible (UV–Vis) spectrometer, and temperature dependence Hall measurements. XRD data of obtained ITO films reveal that the films were polycrystalline with cubic structure and exhibit (222), (400) and (440) crystallographic planes of In₂O₃. AFM and Scanning Electron Microscopy SEM have been used to probe the surface roughness and the morphology of the films. The refractive index (n), thickness and porosity (%) of the films were evaluated from transmittance spectra obtained in the range 350–700 nm by UV–Vis. The optical band gap of ITO film was found to be varying from 3.35 to 3.47 eV with the annealing time. The annealing time dependence of resistivity, carrier concentration, carrier mobility, sheet resistance, and figure of merit values of the films at room temperature were discussed. The carrier concentration of the films increased from 1.21 × 10²⁰ to 1.90 × 10²⁰ cm^?3, the Hall mobility increased from 11.38 to 18 cm² V^?1 s^?1 and electrical resistivity decreased from 3.97 × 10^?3 to 2.13 × 10^?3 Ω cm with the increase of annealing time from 1 to 9 h. Additionally, the temperature dependence of the carrier concentration, and carrier mobility for the as-deposited and 400 °C annealed ITO films for 2 and 9 h were analysed in the temperature range of 80–350 K.     

Fabrication of a novel SnO2:Al/ZnO:F bi-layer for opto-electronic applications

Single layered aluminium doped tin oxide (ATO), fluorine doped zinc oxide (FZO) and bi-layered ATO/FZO thin films were deposited onto preheated glass substrates (T_s = 340 ± 5 °C) using a low-cost and simplified spray pyrolysis technique. The structural, optical, electrical and surface morphological properties of the bi-layered ATO/FZO thin films were studied and compared with that of the single layered films. The average optical transmittance of the bi-layer film in the visible range was found to be around 80 %. The bi-layered ATO/FZO films possessed both better transmittance in the visible range and sharp absorption edge, the unique desirable features of ATO and FZO films, respectively. The optical band gap (E_g) value of the bi-layer coating (3.22 eV) was found to lie between the E_g values of single layered ATO (3.71 eV) and FZO (3.20 eV) films. Sheet resistance values of ATO and FZO single layer films were 3.47 and 11.2 kΩ/sq., respectively. The bi-layered ATO/FZO thin films exhibited a sheet resistance of 4.42 kΩ/sq. which was very much close to that of ATO films and three times less than that of FZO film. The AFM images showed the good packing density and homogeneity of the surface of the bi-layer films. The annealing studies clearly showed that the ATO over layer remarkably improved the thermal stability of the bi-layered film.     

Effect of the substrate temperature on the structural, optical and electrical properties of spray-deposited CdS:B films

Boron doped CdS films have been deposited by spray pyrolysis method onto glass substrate temperature in the range of 350–450 °C. And the effect of substrate temperature (T _s) on the structural, electrical and optical properties of the films were studied. The structural properties of boron doped CdS films have been investigated by (XRD) X-ray diffraction techniques. The X-ray diffraction spectra showed that boron doped CdS films are polycrystalline and have a hexagonal (wurtzite) structure. By using SEM analysis, the surface morphology of the films was observed as an effect of the variation of substrate temperature. The substrate temperature is directly related with the shift detected in the band gap values derived from optical of parameters and the direct band gap values were found to be in the region of 2.08–2.44 eV. The electrical studies showed that the film deposited at the substrate temperature 400 °C had high carrier concentration and Hall mobility and minimum resistivity. This resistivity value decreased with increase in temperature up to 400 °C indicating the semiconducting nature of B- doped CdS films. The lattice parameter, grain size, microstrain and dislocation densities were calculated and correlated with the substrate temperature (T _s ).