Structural and electrical properties of Ho<Superscript>3+</Superscript>-modified Pb(Zn<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>–9PbTiO<Subscript>3</Subscript> single crystals

Ho³⁺-modified Pb(Zn_1/3Nb_2/3)O₃–9PbTiO₃ (PZN–9PT) single crystals were grown through a flux method. Phase structure and microstructural morphology of the as-grown single crystals were performed by X-ray diffraction analysis and scanning electron microscopy. The refinement of the lattice parameters were obtained by the Rietveld method. The electrical properties of PZN–9PT single crystals were improved significantly by the modification of Ho³⁺ ions. The rhombohedral–tetragonal phase transition temperature, Curie temperature, coercive field at 15 kV cm^?1, and remnant polarization of Ho³⁺-modified PZN–9PT single crystals were increased by 14, 42 K, 2.4 kV cm^?1, and 7.5 μC cm^?2, respectively (i.e., 375.45, 448.45 K, 5.9 kV cm^?1, and 38.40 μC cm^?2, respectively). Furthermore, Lorentz-type law was used to describe the dielectric relaxor behavior of the as-grown single crystals.     

Effect of excess Pb on microstructures and electrical properties of 0.67Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>–0.33PbTiO<Subscript>3</Subscript> ceramics

0.67Pb(Mg_1/3Nb_2/3)O₃–0.33PbTiO₃ (PMNT) ceramics were fabricated by using their powders synthesized through a sol–gel process. Excess Pb(CH₃COO)₂·3H₂O (0, 2, 5, 10 or 15 mol%) was added to the starting materials to study the effect of excess Pb on the microstructures, ferroelectric and dielectric properties of the PMNT ceramics. All the X-ray diffraction peaks can be indexed using perovskite-type PMNT for the ceramics prepared with excess Pb, while the PMNT ceramics with no excess Pb contain a little pyrochlore phase. The PMNT ceramics prepared with 2 mol% excess Pb are dense and uniform and composed of grains ranging from 3 to 7 μm. They exhibit the largest remnant polarization (P _r = 32.1 μC/cm²) and the highest peak dielectric constant (ε _max = 12,725). When more than 2 mol% excess Pb added, the electrical properties of the PMNT ceramics decreased with increasing excess Pb. Too much excess Pb (over 10 mol%) resulted in abnormal grain growth (>20 μm), large pores and residual PbO in amorphous state in PMNT ceramics, and they impaired the ferroelectric and dielectric properties of PMNT ceramics greatly.     

Aging and thermal stability of [001]<Subscript>c</Subscript>- and [111]<Subscript>c</Subscript>-poled 0.63Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>–0.37PbTiO<Subscript>3</Subscript> single crystals

The aging characteristics and thermal stability of [001]_c- and [111]_c-poled tetragonal 0.63Pb(Mg_1/3Nb_2/3)O₃–0.37PbTiO₃ single crystals have been studied. For [001]_c-poled crystal, the d₃₃, \(\varepsilon _{{33}}^{T}\), k_t, and k₃₃ increase slightly during the aging process due to the gradual depolarization of the single-domain state. On the contrary, the electromechanical properties of [111]_c-poled crystal decrease quickly with the aging time due to the growth and combination of micro-domains. The temperature-dependent electromechanical properties indicate that the [111]_c-poled multi-domain crystal is more stable than [001]_c-poled single-domain crystal. In addition, the second poling can effectively enhance the piezoelectric constant d₃₃ of the [111]_c-oriented multi-domain crystals from 1032 pC/N after the first poling to 1247 pC/N.     

SmAlO<Subscript>3</Subscript> + Ba(Zn<Subscript>1/2</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>: microwave ceramic composite

The 0.1SmAlO₃ + 0.9Ba(Zn_1/2Nb_2/3)O₃ composite is prepared through the solid state ceramic route. The structure of the materials is studied using X-Ray diffraction analysis. The microstructure is studied using scanning electron microscopy and the elemental composition by energy dispersive spectrometry. The dielectric properties in the radio and microwave frequencies are measured. The photoluminescence property of the sample is also analyzed. The material has dielectric constant (ε _r ) = 37, temperature coefficient of resonant frequency (τ _f ) = +25 ppm/°C and high quality factor. The measured values of ε _r and τ _f are compared with the corresponding theoretical values. The composite is useful in the field of optoelectronics and microwave communication.     

Structural and electrical properties of lead reduced lanthanum modified BiFeO<Subscript>3</Subscript>–PbTiO<Subscript>3</Subscript> solid solution

Lanthanum modified binary electronic systems of BiFeO₃ (BFO) and PbTiO₃ (PT) in different molar ratios with reduced lead (Pb) content have been synthesized by using a high-temperature solid-state reaction technique. Detailed studies of structural, morphological and electrical properties of the prepared solid solutions [(Pb_1?xBi_0.5xLa_0.5x)(Fe_xTi_1?x)O₃ with x = 0.1, 0.3, 0.5 and 0.7] have provided some interesting findings on structure-properties relationship. An abrupt change is observed in the structure of the solid solution from tetragonal to rhombohedral with the increase of La concentration. The micro-structural analysis reveals that the grain size of the system reduces on increasing La concentration of the prepared electronic system. The reduction of Pb concentration not only advances the dielectric response of lanthanum modified BiFeO₃–PbTiO₃ electronic material but also suppresses the toxic behavior of the material. For higher concentration of La, the remnant polarization is observed to be minimum. The impedance studies exhibit the presence of grain and grain boundary effects, and existence of a negative temperature coefficient of resistance (NTCR) in the material. The ac conductivity increases with increase in frequency in the low-temperature region for all the materials. It is observed that the prepared electronic materials obey the non-exponential type of conductivity relaxation.     

Phase formation and microstructure of Nd<Superscript>+3</Superscript> doped Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> prepared by sol–gel method

The aim of this study was to investigate the effects of the rare earth element neodymium on the phase formation and microstructural development of relaxor ferroelectric lead magnesium niobate, Pb(Mg_1/3Nb_2/3)O₃ (PMN) system. Perovskite phase PMN powders were prepared using the sol–gel method and the effect of neodymium doping was investigated at different doping levels ranging from 0.1 mol% to 30 mol%. The precursors employed in the sol–gel process were lead (II) acetate, magnesium ethoxide, and niobium (V) ethoxide. All the experiments were performed at room temperature while the calcination temperatures ranged between 800 °C and 1,100 °C. Results showed that it was possible to obtain the pure perovskite phase at 950 °C using the sol–gel method. Nd⁺³ addition influenced the phase formation and microstructure of the multicomponent system. Pyrochlore was detected along with the perovskite phase above 10 mol% Nd. Results also demonstrated that grain size of the synthesized powders depended on the Nd⁺³ concentration.     

Poling field versus piezoelectric property for [001]<Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> oriented 91%Pb(Zn<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>–9%PbTiO<Subscript>3</Subscript> single crystals

Electromechanical property measurements and microstructure observations using optical microscopy were performed on a [001] _c oriented k ₃₃ resonator made of 91%Pb(Zn_1/3Nb_2/3)O₃–9%PbTiO₃ single crystal, which was polarized under different electric fields. At room temperature, when the poling field is 1100 V/mm, the electromechanical coupling factor k ₃₃ is 0.90 and piezoelectric coefficient d ₃₃ is 1665 pC/N. Such superior electromechanical properties could be attributed to the formation of monoclinic multi-domain structure, which transforms to tetragonal phase at 46 °C. While at a higher poling field of 1200 V/mm, the crystal becomes single-domain tetragonal state and its k ₃₃ and d ₃₃ are only about 0.69 and 850 pC/N, respectively. The critical poling field to transform the monoclinic phase to the tetragonal phase is found to be ~1120 V/mm.     

Effect of excess Pb on formation of perovskite-type 0.67Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>-0.33PbTiO<Subscript>3</Subscript> powders synthesized through a sol–gel process

Perovskite-type 0.67Pb(Mg_1/3Nb_2/3)O₃-0.33PbTiO₃ (PMNT) powders were fabricated by using a sol–gel process. Excess Pb(CH₃COO)₂·3H₂O (0, 2, 5, 10 or 15 mol%) was added to starting materials to compensate PbO loss from volatilization during heat treatment. X-ray diffraction (XRD) was employed to investigate the effect of excess Pb on the perovksite phase formation of the PMNT powders. It was found that the optimal level of the excess Pb content is 5 mol%. When the raw materials contained 5 mol% excess Pb, the PMNT powders of purest perovskite form was obtained at the calcination temperature of 850 °C. In the PMNT powders, most part of the intermediate phase was Pb-rich pyrochlore Pb₂Nb₂O₇ which was transformed into perovskite phase after calcination at 650 °C, while the residual pyrochlore phase was Pb-deficient Pb₃Nb₄O₁₃ which required calcination at a higher temperature (650–850 °C) to transform into perovskite phase. Compared with the conventional solid-state reaction methods and the solution-based methods reported previously, the present sol–gel route is better at synthesizing PMNT powders of perovskite phase at a low temperature.     

Structure,electrical, and optical properties of ZnO-substituted PbO for the Er<Superscript>3+</Superscript>/Yb<Superscript>3+</Superscript> co-doped Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>–GeO<Subscript>2</Subscript>–Na<Subscript>2</Subscript>O glass system

Glasses of the 0.5Er³⁺/2.5Yb³⁺ co-doped (40Bi₂O₃–20GeO₂–(30 − x)PbO–xZnO–10Na₂O system where x = 0.0, 5, 10, 15, 20, 25, and 30 mol%) have been characterized by FT-IR spectroscopy measurements to obtain information about the influence of ZnO-substituted PbO on the local structure of the glass matrix. The density and the molar volume have been determined. The influences of the ZnO-substituted PbO on the structure of glasses have been discussed. The dc conductivity measured in the temperature range 475–700 K obeys Arrhenius law. The conductivity decreases while the activation energy for conduction increases with increase ZnO content. The optical transmittance and reflectance spectrum of the glasses have been recorded in the wavelength range 400–1100 nm. The values of the optical band gap E _opt for all types of electronic transitions and refractive index have been determined and discussed. The real and imaginary parts ε₁ and ε₂ of dielectric constant have been determined.     

Microwave dielectric properties of Sr<Subscript>0.7</Subscript>Ce<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript>–Sr(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> ceramics

xSr_0.7Ce_0.2TiO₃–(1???x)Sr(Mg_1/3Nb_2/3)O₃ ceramics, referred to xSCT–(1???x)SMN, were successfully produced by conventional solid-state sintered technology. The compounds, belonging to perovskites with a secondary phase of CeO₂, can be detected even with x down to 0.1 of SCT composition. The overall trend for grain growth illustrates the increase with increasing SCT doping level. The Raman peak at 825 cm^?1 splits into two peaks and causes red shift phenomenon. XPS spectra indicate that Ti and Nb ions exist respectively in tetravalence and pentavalence, and Ce ions exist in trivalence and tetravalence. Dielectrics constant (ε _r ) of SCT–SMN ceramics gradually increases with increasing theoretical dielectric polarizabilities. A wider width of the 825 cm^?1 for FWHM of A_1g mode Raman peaks suggests to a lower Q?×?f value. The increasing tolerance factor in agreement with temperature coefficient of resonant frequency (τ _f ), denotes that the rise of perovskite symmetry. The 0.1SCT–0.9SMN ceramic sintered at 1450?°C for 4 h illustrates excellent microwave dielectric properties with ε _r ?~?35.4, Q?×?f?~?11282 GHz and τ _f ?~?1.7 ppm/°C. Activation energies of 0.1SCT–0.9SMN ceramic at 100, 300 and 500 V, are ~0.436, 0.427 and 0.331 eV, respectively, indicative of a decreased trend with external electric field.     

Intense 2.0 µm emission from Ho<Superscript>3+</Superscript>/Yb<Superscript>3+</Superscript> co-doped Na<Subscript>5</Subscript>Lu<Subscript>9</Subscript>F<Subscript>32</Subscript> single crystal excited by 980 nm

This paper reported on optical spectra of Na₅Lu₉F₃₂ single crystals co-doped with ~?0.91 mol% Ho³⁺ and various Yb³⁺ concentrations by using an improved Bridgman method. The emission spectra and fluorescence decay curves were measured to investigate the luminescent properties of the Ho³⁺/Yb³⁺ co-doped Na₅Lu₉F₃₂ and the energy transfer process from Yb³⁺ to Ho³⁺ ion. Compared with the Ho³⁺ singly doped Na₅Lu₉F₃₂ crystal, the Ho³⁺/Yb³⁺ co-doped crystal had an obviously enhanced emission at 2.0 µm via the 980 nm laser diode excitation because of the efficient energy transfer from Yb³⁺ to Ho³⁺ ion. The maximum emission intensity at 2.0 µm was obtained at about 6.99 mol% Yb³⁺ concentration when the concentration of Ho³⁺ ions is fixed at ~?0.91 mol% in the current research. The maximum emission cross section of the above sample at 2.0 µm was calculated to be 1.23?×?10^?20 cm² according to the measured emission spectrum. The energy transfer efficiency from Yb³⁺:²F_5/2 to Ho³⁺:⁵I₆ for the crystal was estimated up to 90.8% indicating that Yb³⁺ ions can efficiently sensitize the Ho³⁺ ions.     

Effect of excess Pb in PbTiO<Subscript>3</Subscript> precursors on ferroelectric and fatigue property of sol–gel derived PbTiO<Subscript>3</Subscript>/PbZr<Subscript>0.3</Subscript>Ti<Subscript>0.7</Subscript>O<Subscript>3</Subscript>/PbTiO<Subscript>3</Subscript> thin films

A series of Pb_(1+x)TiO₃/PbZr_0.3Ti_0.7O₃/Pb_(1+x)TiO₃ (PTO/PZT/PTO) and PbZr_0.3Ti_0.7O₃ (PZT) thin films were prepared by a sol–gel method. Different excess Pb content (x) (x = 0, 0.05, 0.10, 0.15, 0.20) were added to the PbTiO₃ (PTO) precursors to investigate their effect on ferroelectric and fatigue properties of the PTO/PZT/PTO thin films. X-ray diffraction results show that the crystallization behavior of the PTO/PZT/PTO thin films is greatly affected by the excess Pb content (x) in PTO precursors. Topographic images show that the PTO/PZT/PTO thin films with excess Pb content x = 0.10 appears the densest and the most uniform grain size surface morphology. The ferroelectric and fatigue properties of the films correlate straightforwardly to the crystallization behaviors and excess Pb content (x) in the PTO precursors. The excess Pb content (x) in the PTO layers which acts as a nucleation site or seeding layer for PZT films affects the crystallization of the PTO layer and ultimately affects the perovskite phase formation of the PZT films. With the proper excess Pb content (x = 0.10–0.15) in the PTO precursors, the pure perovskite structure PTO/PZT/PTO thin films, with dense, void-free, and uniform fine grain size are obtained, and a well-saturated hysteresis loop with higher remnant polarization is achieved. Using an appropriate Pb content, the fatigue has been avoided by controlling the inter-diffusion and surface volatilization.     

Structural and electrical properties of Bi<Subscript>1/2</Subscript>Na<Subscript>1/2</Subscript>TiO<Subscript>3</Subscript>–BaTiO<Subscript>3</Subscript>–Sr<Subscript>3</Subscript>CuNb<Subscript>2</Subscript>O<Subscript>9</Subscript> lead-free piezoelectric ceramics

The structure, microstructure, field-induced strain, ferroelectric, piezoelectric and dielectric properties of (1 ? x) (Bi_0.5Na_0.5)_0.935Ba_0.065TiO₃–xSr₃CuNb₂O₉ (BNT-BT6.5–xSCN, with x = 0, 0.003, 0.006, 0.009) ceramics were investigated. X-ray diffraction patterns show that all samples are pure perovskite structure and Sr₃CuNb₂O₉ (SCN) effectively diffused into the 0.935Bi_0.5Na_0.5TiO₃–0.065BaTiO₃ (BNT–BT6.5) solid solution which also reflected in the Raman spectra and the energy disperse spectroscopy (EDS) analysis. With the increases of SCN content, the coercive field (E _c  = 18.41 kV/cm) decreases greatly, whereas the remnant polarization (P _r  = 29.11 μC/cm²) increases a little at x = 0.003 which is showed in the polarization hysteresis (P–E) loops, the result indicate that the ferroelectric order would be disrupted. Around critical composition (x = 0.003) at a driving field of 60 kV/cm, a large unipolar strain of 0.29 % with a normalized strain (d ₃₃ ^*  = 483 pm/V) is obtained at room temperature. The results indicate that BNT-BT6.5-xSCN ceramics with excellent properties are promising to replace lead-based piezoelectric ceramics and can be used in practical applications.     

Ferroelectric and antiferroelectric polarisation switching characteristics of Bi(Mg<Subscript>0.5</Subscript>Ti<Subscript>0.5</Subscript>)O<Subscript>3</Subscript>–PbTiO<Subscript>3</Subscript> ceramics

Bi(Mg_0.5Ti_0.5)O₃–PbTiO₃ (BMT–PT) ceramics, with BMT–PT ratios ranging from 70-30 to 50-50, were prepared by a conventional solid state reaction process. The 50-50 BMT–PT ceramic possessed a tetragonal perovskite structure with a c/a ratio of ~1.037. Increasing BMT content led to a reduction of tetragonality and a change of structure to a rhombohedral or pseudo-cubic phase. Dielectric measurements, carried out during heating, indicated the occurrence of two phase transformations, which were identified as relaxor ferroelectric to antiferroelectric (at a temperature in the range from 150–300 °C) and antiferroelectric to paraelectric (at a temperature around 500 °C). The antiferroelectric nature of the 60-40 and 70-30 BMT–PT ceramics in the intermediate temperature range was confirmed by polarisation-electric field hysteresis measurements.     

Synthesis of Yb<Superscript>3+</Superscript>, Ho<Superscript>3+</Superscript> and Tm<Superscript>3+</Superscript> co-doped β-NaYF<Subscript>4</Subscript> nanoparticles by sol–gel method and the multi-color upconversion luminescence properties

Well-crystalline β-NaYF₄:Yb³⁺, Ho³⁺, Tm³⁺ nanoparticles were synthesized by sol–gel method using isopropyl alcohol [(CH₃)₂CHOH] as a complexing agent. The samples were characterized by X-ray diffraction, scanning electron microscopic analysis and fluorescence spectrum analysis methods. Under the excitation of 980 nm laser diode (LD), the samples displayed bright upconversion luminescence (UCL), which was generated from the energy level transition of Ho³⁺ and Tm³⁺ ions. With the increase of Tm³⁺, Ho³⁺ and Yb³⁺-doping concentration, the UCL intensity of blue, green and red light emission of the samples varied. Calculation of the CIE color coordinate of the β-NaYF₄:Yb³⁺, Ho³⁺, Tm³⁺ nanoparticles revealed that with the adjustment of Tm³⁺, Ho³⁺ and Yb³⁺ doping concentration and the excitation power of 980 nm LD, the multi-color UCL can be realized. Approximately single red light output with the CIE color coordinate of x?=?0.545, y?=?0.306 and white light output with the CIE color coordinate of x?=?0.325, y?=?0.320 can be obtained in the synthesized β-NaYF₄: Yb³⁺, Ho³⁺, Tm³⁺ nanoparticles.     

Effect of gamma radiation on electrical and optical properties of (TeO<Subscript>2</Subscript>)<Subscript>0·9</Subscript> (In<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>0·1</Subscript> thin films

We have studied in detail the gamma radiation induced changes in the electrical properties of the (TeO₂)_0·9 (In₂O₃)_0·1 thin films of different thicknesses, prepared by thermal evaporation in vacuum. The current–voltage characteristics for the as-deposited and exposed thin films were analysed to obtain current versus dose plots at different applied voltages. These plots clearly show that the current increases quite linearly with the radiation dose over a wide range and that the range of doses is higher for the thicker films. Beyond certain dose (a quantity dependent on the film thickness), however, the current has been observed to decrease. In order to understand the dose dependence of the current, we analysed the optical absorption spectra for the as-deposited and exposed thin films to obtain the dose dependences of the optical bandgap and energy width of band tails of the localized states. The increase of the current with the gamma radiation dose may be attributed partly to the healing effect and partly to the lowering of the optical bandgap. Attempts are on to understand the decrease in the current at higher doses. Employing dose dependence of the current, some real-time gamma radiation dosimeters have been prepared, which have been found to possess sensitivity in the range 5–55 μGy/μA/cm². These values are far superior to any presently available real-time gamma radiation dosimeter.     

Ho<Superscript>3+</Superscript>-Doped ZrF<Subscript>4</Subscript>–BaF<Subscript>2</Subscript>–BiF<Subscript>3</Subscript> Ceramic 2-µm laser beam visualizer

A ceramic 2-µm laser beam visualizer based on Ho³⁺-doped β-BaZrF₆ is proposed. The ceramic has been prepared by crystallizing 60ZrF₄–35BaF₂–5BiF₃ glass doped with 3 wt % HoF₃. Exciting the Ho³⁺⁵I₇ level by a Tm:LiYF₄ (Tm:YLF) laser at λ = 1910 nm, we observed a strong red luminescence, due to the ⁵F₅ → ⁵I₈ transition, and a weaker, green luminescence, corresponding to the (⁵F₄, ⁵S₂) → ⁵I₈ transition. The threshold power density of the Tm:YLF laser at which a red spot was observed on a ceramic sample was 1.1 W/cm².     

Effects of LiNbO<Subscript>3</Subscript> doping on the microstructures and electrical properties of BiScO<Subscript>3</Subscript>–PbTiO<Subscript>3</Subscript> piezoelectric system

Piezoelectric ceramics xLiNbO₃–yBiScO₃–(1?x?y)PbTiO₃ (LN–BS–PT, 0.00?≤?x?≤?0.10, 0.30?≤?y?≤?0.36) were synthesized and their phase diagram and morphotropic phase boundary between rhombohedral and tetragonal phases have been confirmed. The optimal properties were found at the composition of 0.03LN–0.36BS–0.61PT with piezoelectric coefficient d₃₃^* value of 702 pm/V, d₃₃ of 551 pC/N, planar electromechanical coupling factor k_p of 0.51, remnant polarization P_r of 46.5 µC/cm², Curie temperature T_c of 337 °C, and a large strain of 0.351% at an electric field of 50 kV/cm and frequency of 2 Hz with a low strain hysteresis of 5.9%. The Curie temperature of the ternary system presents a linear relationship with LiNbO₃ and BiScO₃ contents. The optimization of these electric properties was probably ascribed to the enhancement in domain walls and the improving mobility of domain switching due to LiNbO₃ doping.     

Luminescent properties of single-phase Ba<Subscript>2</Subscript>P<Subscript>2</Subscript>O<Subscript>7</Subscript>:Tb<Superscript>3+</Superscript>, R (R = Eu<Superscript>2+</Superscript>, Ce<Superscript>3+</Superscript>) phosphors for white LED

The Ba₂P₂O₇:Tb³⁺, R (R?=?Eu²⁺, Ce³⁺) phosphors were synthesized by use of a co-precipitation method. Crystal phase, excitation and emission spectra of sample phosphors are analyzed by means of XRD and FL, respectively. The emission spectra of Ba₂P₂O₇:Ce³⁺, Tb³⁺ phosphors exhibit four linear peaks attributed to the ⁵D₄?→?⁷F_J (J?=?6–3) transition of Tb³⁺ while four broad emission bands are observed in the emission spectra of Ba₂P₂O₇:Eu²⁺, Tb³⁺ phosphors. The effects of Eu²⁺ concentration on the luminescent properties of Ba₂P₂O₇:Tb³⁺, R (R?=?Eu²⁺, Ce³⁺) are studied. Ce³⁺ affects the luminescent properties of Ba₂P₂O₇:Ce³⁺, Tb³⁺ phosphors just as the sensitizer. However, Eu²⁺ is considered both as the sensitizer and the activator in Ba₂P₂O₇:Eu²⁺, Tb³⁺ phosphors. The chromaticity coordinates of Eu²⁺ and Tb³⁺ co-doped phosphors gather around the white light field with the CCT approximate to 5000 K, indicating that the luminescent property of Ba₂P₂O₇:Eu²⁺, Tb³⁺ phosphors may approach to a desired level needed for white LED application.     

Electrical properties of B site substituted (K<Subscript>0.48</Subscript>Na<Subscript>0.52</Subscript>)(W<Subscript>2/3</Subscript>Bi<Subscript>1/3</Subscript>)<Subscript>x</Subscript>Nb<Subscript>1−x</Subscript>O<Subscript>3</Subscript> piezoceramics

Lead-free (K_0.48Na_0.52)(W_2/3Bi_1/3)_xNb_1−xO₃ (KNN-WBi) piezoceramics with x ranging from 0.004 to 0.010 were synthesized by conventional ceramic processing. The sintered KNN-WBi ceramics showed perovskite structure without detectable secondary phase containing W and Bi. With increasing x, the orthorhombic-tetragonal phase transition temperature (T _O-T) decreased from 200 to 184 °C whereas, the tetragonal-cubic phase transition temperature (T _C) decreased slightly. With the doping of (W_2/3Bi_1/3), the piezoelectric properties were greatly improved and the piezoelectric constants d ₃₃, k _p, Q _m exhibited maximum values of 136 pC/N, 43.3% and 175, respectively at x = 0.008. The KNN-WBi ceramics also exhibited good ferroelectric properties with remnant polarizations P _r higher than 25 μC/cm² and coercive fields E _c lower than 1,000 V/mm. The results strongly suggest that the B site doping of constructed quinquevalent element is an effective method for the investigation of potassium sodium niobate system.