Preparation of nanocrystalline Mg doped CdSe thin films and their optical,photoluminescence, electrical and structural characterization

Phosphors used are mostly rare earth doped complex structures. A simple and unique material system of CdSe:Mg nanocrystalline thin films, which efficiently absorb UV (235 nm) and emit broad spectrum of green-yellow region has been prepared by chemical bath deposition method with average particle size of 52.3 nm, measured using AFM images. The optical absorption studies found that CdSe thin film has direct optical band gap, \({E_g}\) of 2.62 eV that shows a blue shift of 0.88 eV compared to the bulk \({E_g}\) value. Optical, electrical, structural and morphological properties were studied by UV–Vis–NIR spectrophotometer, photoluminescence (PL) emission spectra, dc two-probe method, X-ray diffraction (XRD), and atomic force microscope (AFM). Measured electrical resistivity decreased with increase of doping concentration. Activation energy was also calculated. The results confirm that the CdSe:Mg thin films are in the pure cubic phase. The magnesium concentrations also affect the nanocrystalline nature of the CdSe thin films. The optical band gap and surface roughness of CdSe thin films mostly decrease with 5% doping of Mg. The effect of Mg doping on refractive index, extinction coefficient and other optical parameters was also investigated.     

Structural,morphological, optical and electrical properties of spray deposited zinc doped copper oxide thin films

Nanostructured spray deposited zinc (Zn) doped copper oxide (CuO) thin films were characterized by employing X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX), atomic force microscopy (AFM) and ultraviolet–visible–near infrared (UV–Vis–NIR) spectroscopy. XRD patterns of CuO and Zn doped CuO thin films indicated monoclinic structure with the preferred orientation along \(\left( {\bar 111} \right)\) plane. Maximum value of crystallite size is found about 28.24 nm for 5 at% Zn doped CuO thin film. In FESEM images, nanoparticles were observed around the nucleation center. EDX analysis confirms the presence of all component elements in CuO and Zn doped CuO thin films. Analysis by AFM of CuO and Zn doped CuO thin films figured out decrease of surface roughness due to Zn doping. UV–Vis–NIR spectroscopy showed that CuO and Zn doped CuO thin films are highly transparent in the NIR region. Optical band gap of CuO thin films decreased with substrate temperature and that of Zn doped CuO thin films increased with Zn concentration. Refractive index of CuO and Zn doped CuO thin films raised with photon wavelength and became constant in the NIR region. 5 at% Zn doped CuO thin film showed the highest optical conductivity and the lowest electrical resistivity at room temperature.     

Influence of (Zn + F) double doping on the structural,morphological, photoluminescence,optoelectrical properties and antibacterial activity of CdS thin films

The effects of (Zn + F) double doping on the structural, morphological, optical and electrical properties of CdS thin films is reported in this paper. Polycrystalline nature is observed for all the films. Zn-doped and (Zn + F) doubly doped CdS films exhibit a strong (0 0 2) preferential orientation similar to that of the undoped film. The (0 0 2) plane of the Zn-doped and (Zn + F) doubly doped films shift towards higher Bragg angles favoring a contraction in their lattice parameter values. Increased transparency and blue shift in optical band gap is observed for the doubly doped films. The electrical resistivity values of the undoped, Zn-doped, (Zn + F) doubly doped CdS thin films are found to be in the order of 10^?1 Ω-cm. From the obtained results it is found that the physical properties of Zn-doped CdS films got enhanced when co-doped with fluorine, and the (Zn + F) doubly doped CdS thin films seem to be a potential candidate for future optoelectronic device applications. Antibacterial activity of the as deposited films were carried against E. coli gram negative bacteria and from the zone of inhibition it is confirmed that the (Zn + F) doubly doped CdS thin films can be used as a good antimicrobial agent against pathogenic microorganisms.     

Influence of Al doping on the structural,morphological and opto-electrical properties of spray deposited lead sulfide thin films

This paper reports the synthesis of Al-doped PbS (PbS:Al) thin films by spray pyrolysis technique on glass substrates. Al doping concentration is varied as 0, 2, 4, 6 and 8 at.% in undoped PbS. Undoped and doped films exhibit cubic crystal structure with a (2 0 0) preferential orientation. The 2θ value of the doped films shifts towards higher Bragg angles confirming a contraction in their unit cell volume. The crystallite size values determined using the Scherrer formula decreased from 27.88 to 25.79 nm with increase in Al doping concentration. EDX spectra confirmed the presence of Al in the doped films. Increased transparency and blue shift in the optical band gap is observed with Al doping. The resistivity range of all the films were found to be in the order of 10² Ω-cm. Increased transparency, widened band gap and decreased resistivity observed make PbS:Al films suitable for tandem solar cells which uses multilayered pn junctions.     

Structural, electrical and optical properties of Si doped ZnO films grown by atomic layer deposition

Si doped ZnO (SZO) films with various Si concentrations were deposited by atomic layer deposition at 300 °C using triethyzinc, tris(dimethylamino)silane and H₂O₂ as the precursors. The influences of Si doping concentration on structural, electrical and optical properties of ZnO films have been investigated. All the films exhibited a highly preferential c-axis orientation. A minimum resistivity of 9.2 × 10^?4 Ω cm, with a carrier concentration of 4.3 × 10²⁰ cm^?3 and a Hall mobility of 15.8 cm²/Vs, was obtained for SZO film prepared with the Si concentration of 2.1 at%. The increase of conductivity with Si doping was attributed to the presence of Si in +3 valence state acting as donor in ZnO and the increases of oxygen vacancies with Si concentration as proven by XPS measurements. The optical bandgap of SZO films initially increased from 3.25 to 3.55 eV with increasing of Si concentration to 2.1 at%, then decreased with further increase of Si concentration. The blue shift of band gap of SZO films with increasing carrier concentration can be explained by the Burstein-Moss (B-M) effects.     

Influence of Fe dopant concentration and annealing temperature on the structural and optical properties of ZnO thin films deposited by sol–gel method

Nanostructured Fe doped ZnO thin films were deposited onto glass substrates by sol–gel spin coating method. Influence of Fe doping concentration and annealing temperature on the structural, compositional, morphological and optical properties were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV–Vis spectroscopy and photoluminescence (PL) measurements. XRD analysis showed that all the films prepared in this work possessed a hexagonal wurtzite structure and were preferentially oriented along the c-axis. Pure ZnO thin films possessed extensive strain, whereas Fe doped films possessed compressive strain. In the doped films, least value of stress and strain was observed in the 0.5 at.% Fe doped thin film, annealed at 873 K. Average crystallite size was not significantly affected by Fe doping, but it increased from 15.57 to 17.79 nm with increase in annealing temperature from 673 to 873 K. Fe ions are present in +3 oxidation state as revealed by XPS analysis of the 0.5 at.% Fe doped film. Surface morphology is greatly affected by changes in Fe doping concentration and annealing temperature which is evident in the SEM images. The increase in optical band gap from 3.21 to 3.25 eV, with increase in dopant concentration was attributed to Moss–Burstein shift. But increase in annealing temperature from 673 to 873 K caused a decrease in band gap from 3.22 to 3.20 eV. PL spectra showed emissions due to excitonic combinations in the UV region and defect related emissions in the visible region in all the investigated films.     

The effects of the aluminium concentration on optical and electrical properties of AZO thin films as a transparent conductive layer

In this paper, we studied the effects of the aluminium dopant concentration on the optical and electrical properties of aluminium doped zinc oxide (AZO) thin films grown on soda-glass substrates by a simple chemical method. The amount of aluminium in the compound was varied from 0 to 5 atomic percent (at.%), and the typical thickness of the films produced was about 300 nm. The thin films were characterized by scanning electron microscopy and X-ray diffraction to investigate the morphology and crystallinity of the samples. The optical properties of the thin films were studied by UV–Vis spectroscopy to determinate absorption, transmittance, and the diffuse reflectance. In addition, the photoluminescence properties of the thin films, excited with a 320 nm UV laser beam, were investigated. The effects of the aluminium concentration on these optical properties are discussed. The films with 2 and 5 % doping had excellent optical transmittance (~85–90 %) in the 400–1100 nm wavelength range. The photoluminescence spectra of the AZO films revealed UV near band edge emission peaks in the 378–401 nm range and an oxygen-vacancy related peak around 471 nm. The addition of aluminium changed the band gap of zinc oxide from 3.29 to 3.41 eV, and the appearance of a new level was observed in the band gap at the higher aluminium doping concentrations. The AZO thin films showed good conductivity (in the order of 10^?2 Ω cm) which allows their use as transparent electrodes. Moreover, the AZO thin films were stable in open air for 30 days.     

Preparation and photoelectric properties of La-doped ZnO films

Among the various semiconducting metal oxide materials, ZnO films are highly attractive in the development of materials area. In order to improve the photoelectric properties of ZnO films, La-doped ZnO films were prepared by sol–gel method and the changes in conductive properties, light transmission and structure of the doped ZnO films were investigated. The research result shows that the La doping can improve the conductivity of the ZnO films, and when the La concentration increased, the resistivity first decreased and then increased, showing the “U” shaped variation. The resistivity of modified ZnO films drops to the lowest point of 1.84 Ω cm when the annealing temperature is 450 °C and La³⁺ concentration is 0.35 mol%. La doping can also improve the transmittance of ZnO films. The transmittance at the visible region of films is all over 82 %, and the highest value is up to 97 %. Annealing temperature also has an important impact on the electrical conductivity of the films: the resistivity declined further to 0.92 Ω cm as annealing temperature increased to 500 °C. But due to grain growth, it is not conducive to the improvement of light transmission properties.     

Hydrothermal derived nanostructure rare earth (Er,Yb)-doped ZnO: structural,optical and electrical properties

The structural, optical and electrical properties of undoped and rare-earth (Er, Yb) doped zinc oxide (ZnO) nanopowder samples synthesized by hydrothermal method were investigated. The obtained samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive spectroscopy. The optical properties of undoped and rare-earth (Er, Yb) doped ZnO were carried out with UV–visible diffuse reflectance spectroscopy techniques. XRD results reveal that Yb and Er doped ZnO nanopowders have single phase hexagonal (Wurtzite) structure without any impurities. SEM analysis indicate that dopants with different radii affected the surface morphology of ZnO nanostructures. The optical band gap of all samples were calculated from UV–Vis diffuse reflectance spectroscopy data. We have obtained band gap values of undoped, Er and Yb doped ZnO as 3.24, 3.23, 3.22 eV, respectively. Electrical characterization of the samples were made in the 280–350 K temperature range using Van der Pauw method based on Hall effect measurement. The carrier concentrations decreased for both Er and Yb doping while the Hall mobility and electrical resistivity increased with Yb, Er doping compared to undoped ZnO nanopowder at room temperature. The temperature dependent resistivity measurements of Er doped ZnO showed a metal–semiconductor transition at about 295 K, while Yb doped ZnO showed characteristic semiconductor behavior.     

Effect of annealing time on the structural,optical and electrical characteristics of DC sputtered ITO thin films

Using an Indium tin oxide (ITO) ceramic target (In₂O₃:SnO₂, 90:10 wt%), ITO thin films were deposited by conventional direct current magnetron sputtering technique onto glass substrates at room temperature. The obtained ITO films were annealed at 400 °C for different annealing times (1, 2, 5, 7, and 9 h). The effect of annealing time on their structural, optical and electrical properties was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microcopy (AFM), ultra violet–visible (UV–Vis) spectrometer, and temperature dependence Hall measurements. XRD data of obtained ITO films reveal that the films were polycrystalline with cubic structure and exhibit (222), (400) and (440) crystallographic planes of In₂O₃. AFM and Scanning Electron Microscopy SEM have been used to probe the surface roughness and the morphology of the films. The refractive index (n), thickness and porosity (%) of the films were evaluated from transmittance spectra obtained in the range 350–700 nm by UV–Vis. The optical band gap of ITO film was found to be varying from 3.35 to 3.47 eV with the annealing time. The annealing time dependence of resistivity, carrier concentration, carrier mobility, sheet resistance, and figure of merit values of the films at room temperature were discussed. The carrier concentration of the films increased from 1.21 × 10²⁰ to 1.90 × 10²⁰ cm^?3, the Hall mobility increased from 11.38 to 18 cm² V^?1 s^?1 and electrical resistivity decreased from 3.97 × 10^?3 to 2.13 × 10^?3 Ω cm with the increase of annealing time from 1 to 9 h. Additionally, the temperature dependence of the carrier concentration, and carrier mobility for the as-deposited and 400 °C annealed ITO films for 2 and 9 h were analysed in the temperature range of 80–350 K.     

Physical properties of CdS:Ga thin films synthesized by spray pyrolysis technique

This paper reports the investigation of physical properties of CdS:Ga thin films grown for the first time by a simple spray pyrolysis method as a function of Ga-doping level from 0 to 8 at.%. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive photoelectron spectroscopy, transmittance, photoluminescence, Hall effect and resistivity measurements are utilized to search for the structural, morphological, chemical, optical and electrical properties of as-prepared samples. XRD data confirm the presence of hexagonal structure with a strong (101) preferred orientation. SEM results show that the surface morphology varies significantly via Ga-doping, particularly 6 at.% doping level. Optical transparency is improved by the lower Ga-doping (2 and 4 at.%) whereas higher doping concentration (6 and 8 at.%) causes a poor transmission in the visible region. With respect to CdS (2.42 eV), the calculated band gap values at first enhances for 2 at.% Ga-doping and reaches to 2.43 eV. But, further increase in Ga-doping amount leads to a drop in the band gap value (2.39 eV) for 8 at.% Ga-doping. Electrical analyses display that 2 at.% Ga-doped CdS thin films exhibit a maximum carrier density and a minimum resistivity that are related to the substitutional incorporation of Ga³⁺ ions at Cd²⁺ ions. However, higher doping of Ga atoms into CdS gives rise to a gradual diminish in the carrier concentration and a rise in the resistivity. Based on all the data, it should be concluded that 2 at.% Ga-doped CdS thin films exhibit the best optical and electrical properties that can be used in the optoelectronic applications.     

Electrical and optical properties of transparent conducting tin doped ZnO thin films

Electrical, optical and structural properties of tin doped ZnO thin films were investigated for various tin (Sn) doping concentrations. Sol gel method was used to deposit the films on microscopic glass slides and silicon substrate. UV–Visible spectrometer analysis showed excellent optically transparent oscillating natures with transparency above 85% in the visible range. Band gap of 3.24 eV was deduced for Sn doping concentration of 4 at% using envelope method. Scanning electron microscopy (SEM) was employed to study the morphology of the films. Crystallinity of the film was investigated by X-Ray diffraction (XRD), which revealed polycrystalline nature with orientation towards c-axis. Resistivity of 3.11 Ω-cm with minimum stress value of 8.11 × 10⁻³ MPa was measured for Sn doping concentration of 4 at%.     

Effect of the substrate temperature on the structural, optical and electrical properties of spray-deposited CdS:B films

Boron doped CdS films have been deposited by spray pyrolysis method onto glass substrate temperature in the range of 350–450 °C. And the effect of substrate temperature (T _s) on the structural, electrical and optical properties of the films were studied. The structural properties of boron doped CdS films have been investigated by (XRD) X-ray diffraction techniques. The X-ray diffraction spectra showed that boron doped CdS films are polycrystalline and have a hexagonal (wurtzite) structure. By using SEM analysis, the surface morphology of the films was observed as an effect of the variation of substrate temperature. The substrate temperature is directly related with the shift detected in the band gap values derived from optical of parameters and the direct band gap values were found to be in the region of 2.08–2.44 eV. The electrical studies showed that the film deposited at the substrate temperature 400 °C had high carrier concentration and Hall mobility and minimum resistivity. This resistivity value decreased with increase in temperature up to 400 °C indicating the semiconducting nature of B- doped CdS films. The lattice parameter, grain size, microstrain and dislocation densities were calculated and correlated with the substrate temperature (T _s ).     

Structural,morphological and optical properties of undoped and Co-doped ZnO thin films prepared by sol–gel process

Undoped and Co-doped ZnO thin films with different amounts of Co have been deposited onto glass substrates by sol–gel spin coating method. Zinc acetate dihydrate, cobalt acetate tetrahydrate, isopropanol and monoethanolamine (MEA) were used as a precursor, doping source, solvent and stabilizer, respectively. The molar ratio of MEA to metal ions was maintained at 1.0 and a concentration of metal ions is 0.6 mol L^?1. The Co dopant level was defined by the Co/(Co + Zn) ratio it varied from 0 to 7 % mol. The structure, morphology and optical properties of the thin films thus obtained were characterized by X-ray diffraction (XRD), energy dispersive X-ray spectrometer (EDX), scanning electron microscopy (SEM), ultraviolet–visible (UV–Vis), photoluminescence (PL) and Raman. The XRD results showed that all films crystallized under hexagonal wurtzite structure and presented a preferential orientation along the c-axis with the maximum crystallite size was found is 23.5 nm for undoped film. The results of SEM indicate that the undoped ZnO thin film has smooth and uniform surface with small ZnO grains, and the doped ZnO films shows irregular fiber-like stripes and wrinkle network structure. The average transmittance of all films is about 72–97 % in the visible range and the band gap energy decreased from 3.28 to 3.02 eV with increase of Co concentration. DRX, EDX and optical transmission confirm the substitution of Co²⁺ for Zn²⁺ at the tetrahedral sites of ZnO. In addition to the vibrational modes from ZnO, the Raman spectra show prominent mode representative of Zn_yCo_3?yO₄ secondary phase at larger values of Co concentration. PL of the films showed a UV and defect related visible emissions like violet, blue and green, and indicated that cobalt doping resulted in red shifting of UV emission and the reduction in the UV and visible emissions intensity.     

Characterization of aluminum-doped zinc oxide thin films by RF magnetron sputtering at different substrate temperature and sputtering power

In this study, transparent conductive Al doped zinc oxide (ZnO: Al, AZO) thin films with a thickness of 40 nm were prepared on the Corning glass substrate by radio frequency magnetron sputtering. The properties of the AZO thin films are investigated at different substrate temperatures (from 27 to 150 °C) and sputtering power (from 150 to 250 W). The structural, optical and electrical properties of the AZO thin films were investigated. The optical transmittance of about 78 % (at 415 nm)–92.5 % (at 630 nm) in the visible range and the electrical resistivity of 7 × 10^?4 Ω-cm (175.2 Ω/sq) were obtained at sputtering power of 250 W and substrate temperature of 70 °C. The observed property of the AZO thin films is suitable for transparent conductive electrode applications.     

Influence of P doping on transparent conductive property of SnO<Subscript>2</Subscript>:P thin film

P doped SnO₂ (PTO) thin films had been prepared by sol–gel dip coating method. The effect of phosphorus doping content, annealing temperature and coating times on microstructure and phase composition and optoelectrical properties of the PTO thin films were investigated by X-ray diffraction (XRD), Scanning electron microscope (SEM), four-point probe and UV–Vis spectrophotometer. The results showed that the PTO thin films exhibited the tetragonal rutile structure under all the experimental conditions. The square resistance of the PTO thin films decreased firstly and then increased with the increase of phosphorus doping content, annealing temperature and coating times. The surface smoothness and grain compactness were increased when annealing temperature increased. The PTO thin films had an optimal square sheet resistance of 8.9 kΩ/□ and high transparency of 95% in the visible region when P/Sn ratio was 2 mol% and annealing temperature was 450?°C and coating times was 14 layer.     

A study on the electrical and optical characteristics of IGZO films

The electrical and optical properties of InGaZnO (IGZO) thin films were studied in the research. It was found that all the films deposited at room temperature exhibit amorphous structures. A better film quality was obtained at a lower pressure with sputtering ambiance. The RF power toward the IZO target was constant at 125 W; the RF power toward the Ga₂O₃ target varied from 0 to 70 W. A best IGZO film with corresponding resistivity, carrier concentration, and mobility is 7.94 × 10^?4 Ω-cm, 1.68 × 10²⁰ cm^?3, and 47 cm²/V-s, respectively. Due to the doping of gallium in the IGZO film, it led to a lower resistivity than that of the IZO film. A blue shift effect of the film was also observed in the doping of gallium to the IGZO film. The H₂ plasma effects toward the IGZO were also observed.     

Structure–property correlation of pure and Sn-doped ZnO nanocrystalline materials prepared by co-precipitation

The structural, optical and electrical properties of pure and tin (Sn) doped zinc oxide (ZnO) nanocrystalline materials prepared by co-precipitation method have been studied as a function of Sn doping concentration. The phase identification through powder X-ray diffraction methods confirmed that pure and Sn-doped zinc oxide powder have typical hexagonal wurtzite structure (a = 3.407 Å and c = 4.592 Å) with slight change in lattice parameters. The surface morphological examination with field emission scanning electron microscopy revealed the fact that the grains are closely and densely packed and pores/voids between the grains decrease with increasing the doping concentration of Sn from 0% to 15%. The energy bandgap of pure ZnO was found to be 3.35 eV from optical absorption spectra obtained by ultraviolet–visible (UV–Vis) absorption spectrophotometer. The variation of energy bandgap and electrical resistivity of Sn-doped ZnO were also determined with tin doping. Upon increasing the Sn dopant concentration from 0 to 15 wt%, the optical bandgaps of ZnO increases from 3.35 to 3.42 eV. The electrical resistivity of Sn-doped ZnO has been decreased at least two orders of magnitude, i.e. from 1263.17 to 28.64 Ω cm. This decrement in electrical resistivity may be due to the partial substitution of divalent Zn²⁺ ions with tetravalent Sn⁴⁺ ions, generating more free electrons for conduction.     

Synthesis and study of the structure,magnetic, optical and methane gas sensing properties of cobalt doped zinc oxide microstructures

Undoped and Cobalt (Co) doped zinc oxide (ZnO & CZx) nanoparticles were synthesized by Solvothermal method. The samples were studied by X-Ray Diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDS), Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES), UV–Vis spectroscopy and Scanning and Transmission Electron Microscopy (SEM & TEM). Moreover the gas sensing properties of the nanoparticles for methane gas took place. Purity of the samples and Co concentration was investigated by EDS and ICP spectroscopy respectively. XRD results described the hexagonal wurtzite structure for all the samples in which crystallinity and the crystallites size decreased with increase of Co doping level. Using UV–Vis spectroscopy the band gap energy was evaluated and redshift of band gap energy was observed by increasing of Co concentration. SEM images demonstrated that nanoparticles were agglomerated with increase of Co doping level. TEM images revealed the nanoparticles size in the range 11–44 nm. Methane sensing properties was enhanced after Co doping of the ZnO nanoparticles for Co concentration up to 4%.     

Structural,optical and magnetic properties of Ba and Ni doped CdS thin films prepared by spray pyrolysis method

Pure, Barium and Nickel doped cadmium sulphide (CdS) thin films have been coated on glass substrates at 400?°C by spray pyrolysis technique. The prepared CdS and doped CdS thin films were analysed by various measurements such as X-ray diffraction (XRD), SEM, optical and Vibrating Sample Magnetometer (VSM). X-ray diffraction measurements show that the coated pure, Ba and Ni-doped CdS thin films belong to the cubic crystal structure with orientation preferentially along (111) direction. The average crystallite size of pure, Ba and Ni doped CdS thin films were determined as 31, 33 and 45 nm, respectively. The average dislocation density (δ) and stacking fault (SF) of pure, Ba and Ni doped CdS thin films were also determined. The surface morphology and elemental analysis of the thin films were determined by scanning electron microscopy and energy dispersive X-ray spectrum (SEM with EDAX). It is observed that the optical energy bandgap has been decreased from 2.43 to 2.1 eV due to the doping Ba. The luminescence spectrum shows a strong emission peak at 517 nm in the case of pure CdS thin film and a meager red shift has been observed due to the doping. VSM studies were employed to study the magnetic behaviour of Ba and Ni doped CdS thin films.