A low-voltage low-power CMOS transmitter front-end using current mode approach for 2.4 GHz wireless communications

This paper presents a low-voltage low-power transmitter front-end using current mode approach for 2.4 GHz wireless communication applications, which is fabricated in a chartered 0.18 μm CMOS technology. The direct up-conversion is implemented with a current mode mixer employing a novel input driver stage, which can significantly improve the linearity and consume a small amount of DC current. The driver amplifier utilizes a transimpedance amplifier as the first stage and employs an inter-stage capacitive cross-coupling technique, which enhances the power conversion gain as well as high linearity. The measured results show that at 2.4 GHz, the transmitter front-end provides 15.5 dB of power conversion gain, output P?1 dB of 3 dBm, and the output-referred third-order intercept point (OIP3) of 13.8 dBm, while drawing only 6 mA from the transmitter front-end under a supply voltage of 1.2 V. The chip area including the testing pads is only 0.9 mm×1.1 mm.     

Design issues in ultra-fast ultra-low-power superconductor Batcher-banyan switching fabric based on RSFQ logic/memory family

The results are presented of the feasibility study of ultra-fast low-power superconductor digital switches based on Rapid Single-Flux-Quantum (RSFQ) technology. RSFQ-based crossbar, Batcher-banyan, and shared bus switching fabrics are considered, and the complexity and performance parameters of these circuits have been estimated. The results show that the proposed SFQ digital switches with overall throughput of 5.76 Tbps operating at an internal clock frequency of ∼60 GHz and dissipating as low as 45 mW power per fabric could effectively compete with their semiconductor and photonic counterparts. The most compact and low-power architecture, the Batcher-banyan switching fabric with TDM switching elements, has been selected for implementation and will be discussed in the paper in detail.     

All-digital controlled boost DC–DC converter with all-digital DLL-based calibration

Traditional digital controls mostly use digital–analog converters to convert input and output voltages into digital coding to achieve control. This paper proposes the use of two digital ramps with two different frequencies to replace a digital–analog converter. This approach can produce seven bit resolution for the DPMW signal. In addition, we use an all-digital DLL phase correction concept to further enhance the resolution of the DPWM signal by an additional three bits, resulting in 10-bit DPWM signal resolution. The proposed circuit uses 0.35 μm CMOS processes, with a core area of 0.987 mm², a system switching frequency of 500 KHz, an input voltage range of 3.3–4.2 V, and an output voltage range of 5 V. Output voltage measurement accuracy reaches 99%, while the system reaches efficiency of 91% with output loads of up to 500 mA.     

Transimpedance amplifier with a compression stage for wide dynamic range optical applications

A high dynamic input transimpedance amplifier was implemented in 130 nm CMOS technology. The proposed TIA is an inverter with a diode connected NMOS and a gate controlled PMOS loads which is cascode connected with the inverter. The square law compression NMOS increases the input photocurrent up to 10 mA. The TIA has an integrated input referred noise current of 135 nA, 227 MHz bandwidth. The TIA shows a transimpedance gain of 59 dBΩ and a 97 dB dynamic range. The TIA consumes 2.3 mA from 1.5 V voltage supply.     

A 0.1–1 GHz low power RF receiver front-end with noise cancellation technique for WSN applications

A low power 0.1–1 GHz RF receiver front-end composed of noise-cancelling trans-conductor stage and I/Q switch stage was presented in this paper. The RF receiver front-end chip was fabricated in 0.18 µm RF CMOS. Measurement results show the receiver front-end has a conversion gain of 28.1 dB at high gain mode, and the single-sideband (SSB) noise figure is 6.2 dB. In the low gain mode, the conversion gain of the receiver front-end is 15.5 dB and the IP1dB is −12 dBm. In this design, low power consumption and low cost is achieved by current-reuse and inductor-less topology. The receiver front-end consumes only 5.2 mW from a 1.8 V DC supply and the chip size of the core circuit is 0.12 mm².     

Design of ultra-low voltage integrated CMOS based LNA and mixer for ZigBee application

This work describes the design and implementation of an ultra-low voltage, ultra-low power fully differential low noise amplifier (LNA) integrated with a down-conversion mixer for 2.4 GHz ZigBee application. An inductive-degenerated cascoded LNA is adapted and integrated with a double-balanced mixer which is targeted for low-power application. The proposed design has been extracted and simulated in a 0.13 μm standard CMOS technology. With a power consumption of 905 μW at a voltage headroom of 0.5 V, the proposed LNA-mixer integration reaches out to an integrated noise figure (NF) of 7.2 dB, a gain of 22.3 dB, 1 dB compression point (P1 dB) of −22.3 dBm and input-referred third-order intercept point (IIP3) of −10.8 dBm.     

Modeling and design of a monolithically integrated power converter on SiC

To fully explore the high temperature and high power density potential of the 4H-SiC material, not only power devices need to be fabricated on SiC, but also the circuitries for signal generation/processing, gate driver and control. In this paper, static and dynamic characteristics of SiC lateral JFET (LJFET) devices are numerically simulated and compact circuit models developed. Based on these models, analog and digital integrated circuits functional blocks such as OPAMP, gate driver and logic gates are then designed and simulated. Finally, a fully integrated power converter including pulse-width-modulation circuit, over-temperature protection circuit and a power boost converter is designed and simulated. The converter has an input of 200 V and an output voltage of 400 V, 2.5 A, operating at 1 kW and 5 MHz.     

Single flux quantum one-decimal-digit RNS adder

Residue number system (RNS) arithmetic has a promising role for fault-tolerant high throughput superconducting single flux quantum (SFQ) circuits for digital signal processing (DSP) applications. We have designed one of the basic computational blocks used in DSP circuits, one-decimal-digit RNS adder. A new design for its main component, the single-modulus adder, has been developed. It combines simple and robust RSFQ elementary cells, both combinational and sequential. The central units are a circular shift register, a code converter, and the clock control circuitry. Our mod5 adder employs 195 Josephson junctions, consumes 50 μW of power, and occupies an area of less than 2 mm². Chips were fabricated at HYPRES, Inc. using 1 kA/cm² low-T_c Niobium technology. The mod5 adder was successfully tested at low speed, and gave experimental bias margins of ±26%.     

A true-1-V 300-/spl mu/W CMOS-subthreshold log-domain hearing-aid-on-chip

This paper presents a true very low-voltage low-power complete analog hearing-aid system-on-chip as a demonstrator of novel analog CMOS circuit techniques based on log companding processing and using MOS transistors operating in subthreshold. Low-voltage circuit implementations are given for all of the required functions including amplification and automatic gain control filtering, generation, and pulse-duration modulation. Based on these blocks, a single 1-V 300-/spl mu/A application specific integrated circuit integrating a complete hearing aid in a standard 1.2-/spl mu/m CMOS technology is presented along with exhaustive experimental data. To the authors' knowledge, the presented system is the only CMOS hearing aid with true internal operation at the battery supply voltage and with one of the lowest current consumptions reported in literature. The resulting low-voltage CMOS circuit techniques may also be applied to the design of A/D converters for digital hearing aids.     

A mixed-signal pulse width modulator for portable SMPS applications

This paper presents a design for a mixed-signal pulse width modulator (MSPWM) integrated circuit that targets the digital control of high-frequency switched-mode DC–DC power supplies (SMPS). Previous designs consider digital pulse width modulators (DPWM) implementations that encounter important design issues, such as power consumption, non-linearity, layout dependency, trimming capability and temperature dependency. This work presents effective solutions, suitable for large-scale production of ICs, since it combines high-precision, high-linearity and temperature-independent standard analog circuits, which are commonly offered by the semiconductor industry, with the simplicity and reuse of digital PID compensation as input. The 8-bit prototype designed for a 0.18-μm CMOS process operates at switching frequency of 2 MHz, draws only 96.25 μA from a 1.8 V supply and takes 0.029 mm², including the non-overlapping control logic of SMPS power devices.     

Low power high data rate wireless endoscopy transceiver

A low power high data rate wireless endoscopy transceiver is presented. Transceiver architecture, circuit topologies and design trade-offs have been considered carefully to satisfy the tight requirements of the medical endoscopy capsule: lower power consumption, high integration degree and high data rate. The prototype, implemented in 0.25 μm CMOS, integrates a super-heterodyne receiver and a super-heterodyne transmitter on a single chip together with an integrated RF local oscillator and LO buffers. The digital modulation and demodulation is also implemented in analog field and no data converters are needed for the whole endoscopy capsule. The measured sensitivity of the receiver is about −70 dBm with a data rate 256 kbps, and the measured output power of the transmitter could achieve −23 dBm with a data rate 1 Mbps. The transceiver operates from a power supply of 2.5 V, while only consuming 15 mW in receiver (RX) mode and 14 mW in transmitter (TX) mode.     

A low power voltage limiter for a full passive UHF RFID sensor on a 0.35 μm CMOS process

This paper presents a low power voltage limiter design for avoiding possible damages in the analog front-end of a RFID sensor due to voltage surges whenever readers and tags are close. The proposed voltage limiter design takes advantage of the implemented bandgap reference and voltage regulator blocks in order to provide low deviation of the limiting voltage due to temperature variation and process dispersion. The measured limiting voltage is 2.9 V with a voltage deviation of only ±0.065 V for the 12 measured dies. The measured current consumption is only 150 nA when the reader and the tag are far away, not limiting the sensitivity of the tag due to an undesired consumption in the voltage limiter. The circuit is implemented on a low cost 2P4M 0.35 μm CMOS technology.     

A high-performance 1.2 V–99 μW rail-to-rail CMOS class AB amplifier

This paper presents a compact, reliable 1.2 V low-power rail-to-rail class AB operational amplifier (OpAmp) suitable for integrated battery powered systems which require rail-to-rail input/output swing and high slew-rate while maintaining low power consumption. The OpAmp, fabricated in a standard 0.18 μm CMOS technology, exhibits 86 dB open loop gain and 97 dB CMRR. Experimental measurements prove its correct functionality operating with 1.2 V single supply, performing very competitive characteristics compared with other similar amplifiers reported in the literature. It has rail-to-rail input/output operation, 5 MHz unity gain frequency and a 3.15 V/μs slew-rate for a capacitive load of 100 pF, with a power consumption of 99 μW.     

A 24-dB Ku-band low-power linearized 90-nm amplifier with a built-in output buffer

In this paper, we present a 90-nm high gain (24 dB) linearized CMOS amplifier suitable for applications requiring high degree of port isolation in the K_u-band (13.2–15.4 GHz). The two-stage design is composed of a low-noise common-gate stage and a gain-boosting cascode block with an integrated output buffer for measurement. Optimization of input stage and load-port buffer parameters improves the front-end's linear coverage, port return-loss, and overall gain without burdening its power demand and noise contribution. With low gate bias voltages (0.65–1.2 V) and an active current source, <?10 dB port reflection loss and 3.25–3.41 dB NF are achieved over the bandwidth. The input reflection loss of the overall amplifier lies between ?35 and ?10 dB and the circuit demonstrates a peak forward gain of 24 dB at 14.2 GHz. The output buffer improves the amplifier's forward gain by ～9 dB and pushes down the minimum output return loss to ?22.5 dB while raising the front-end NF by only 0.05 dB. The effect of layout parasites is considered in detail in the 90-nm process models for accurate RF analysis. Monte Carlo simulation predicts 9% and 8% variation in gain and noise figures resulting from a 10% mismatch in process. The K_u-band amplifier including the buffer block consumes 7.69 mA from a 1.2-V supply. The proposed circuit techniques achieve superior small signal gain, GHz-per-milliwatt, and range of linearity when compared with simulated results of reported microwave amplifiers.     

一种用于数字助听器的次毫瓦级语音处理平台

We present a novel audio-processing platform, FlexEngine, which is composed of a 24-bit applicationspecific instruction-set processor （ASIP） and five dedicated accelerators. Acceleration instructions, compact instructions and repeat instruction are added into the ASIP＇s instruction set to deal with some core tasks of hearing aid algorithms. The five configurable accelerators are used to execute several of the most common functions of hearing aids. Moreover, several low power strategies, such as clock gating, data isolation, memory partition, bypass mode, sleep mode, are also applied in this platform for power reduction. The proposed platform is implemented in CMOS 130 nm technology, and test results show that power consumption of FlexEngine is 0.863 mW with the clock frequency of 8 MHz at Vdd = 1.0 V.     

A compensability RF CMOS mixed-signal interface for implantable system

The implantable microsystem requires the hybrid circuit technology for a brain-machine interface. The paper described a compensability mixed-signal implantable receiver including an analog front-end and a digital processing circuit. The analog circuit consists of mainly an amplifier, an amplitude shift keying (ASK) demodulator, a clock extraction and a power recovery. In this paper, the amplifier and the ASK demodulator are described and provided without the capacitor and the resistor, fully integrated low-power circuit. The processing circuit is designed with the digital technology, so that implementing the correct synchronous signal. The carrier frequency of the circuit is applied in the 10 MHz range; the data rates up to 1 M bit/s are supported, suitable for complex implants such as the brain neural stimulating and so on. The compensability low-power and the high-performance implantable interface using a CMOS technology has been designed, fabricated and verified. All of circuits were implemented in a standard 0.18-μm CMOS process.     

A novel configuration for UWB LNA suitable for low-power and low-voltage applications

Two UWB LNAs based on a new configuration suitable for low-power and low-voltage applications are presented. The proposed configuration saves bias circuit because of sharing only a bias circuit. In designing LNA-1 good phase linearity property achievement is followed for low-power and low-voltage applications, while in LNA-2 the main concerns are high power gain, by keeping low-power consumption, and small chip area. By taking advantages of resistive-feedback and RLC load, wideband input matching is obtained. Based on the proposed configuration, accompany with complete noise analysis, noise of LNA-2 is highly suppressed and flat noise figure is reaped. The 130 nm CMOS LNA-1 and LNA-2 dissipate 2.95 mW and 6.09 mW, respectively, from 0.7 V supply voltage, without using of forward-body-bias technology. Input return loss of both LNAs is below than ?10.5 dB while LNA-1 achieves average power gain of 9 dB and LNA-2 17 dB. The group-delay variation of LNA-1 is about ±6.1 ps over the band of 3.1–10.6 GHz. The NF of LNA-2 is 2.4–2.89 dB over the whole band of interest.     

A power-efficient reference buffer with wide swing for switched-capacitor ADC

A level-shifter-aided CMOS reference voltage buffer with wide swing for high-speed high-resolution switched-capacitor ADC is proposed. It adopts a level shifter for wide swing and a NMOS-only branch circuit for low power. High PSRR (power supply rejection ratio) is guaranteed by the proposed architecture. The proposed reference buffer is integrated in a 14-bit 150 MSps low-power pipelined ADC with the amplification phase of only 2.5 ns. With the input of 2.4 MHz and 2 Vp-p, the measurement of the fabricated ADC shows that the SNDR is 71.3 dB and the SFDR is 93.6 dBc. And the power consumption of the reference buffer is 17 mW from a 1.3 V power supply.     

A 5-GHz LC VCO with digital AAC and AFBS for 2.4 GHz ZigBee transceiver applications

A 5 GHz LC VCO (voltage-controlled oscillator) with automatic amplitude control (AAC) and automatic frequency-band selection (AFBS) for 2.4 GHz ZigBee transceivers is presented. Instead of continuous feedback loop, an alternative amplitude calibration scheme is proposed in this paper to alleviate the deficiencies inherent in the conventional approach. It helps to keep the VCO at optimum amplitude to avoid saturation of the cross-coupled transistors and therefore stabilizes the phase noise performance over process, voltage and temperature variations. For the ZigBee application with 16 frequency channels, a coarse tuning loop is added in this work to implement the frequency-band selection using the AFBS mechanism. The VCO core and the digital AAC, AFBS modules have been fully integrated in a 2.4 GHz ZigBee transceiver which was fabricated in a 0.18 μm RF-CMOS technology. The current consumption is 4.7 mA at 4.85 GHz with 1.8 V power supply and a chip area of about 0.285 mm² is occupied. The VCO is capable of operating from 4.67 GHz to 5.18 GHz and the measured phase-noise level is –120 dBc/Hz at 1 MHz offset from a 4.85 GHz carrier. The tuning sensitivity K_VCO of the VCO is about 78 MHz/V with 0.9 V control voltage.     

Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode

The effects of the n-contact design and chip size on the electrical, optical and thermal characteristics of thin-film vertical light-emitting diodes (VLEDs) were investigated to optimize GaN-based LED performance for solid-state lighting applications. For the small (chip size: 1000×1000 µm²) and large (1450×1450 µm²) VLEDs, the forward bias voltages are decreased from 3.22 to 3.12 V at 350 mA and from 3.44 to 3.16 V at 700  mA, respectively, as the number of n-contact via holes is increased. The small LEDs give maximum output powers of 651.0–675.4 mW at a drive current of 350 mA, while the large VLEDs show the light output powers in the range 1356.7–1380.2 mW, 700 mA, With increasing drive current, the small chips go through more severe degradation in the wall-plug efficiency than the large chips. The small chips give the junction temperatures in the range 51.1–57.2 °C at 350  mA, while the large chips show the junction temperatures of 83.1–93.0 °C at 700  mA, The small LED chips exhibit lower junction temperatures when equipped with more n-contact via holes.