Low Temperature Nitriding of 304 Austenitic Stainless Steel Using RF-ICP Method: the Role of Ion Beam Flux Density

The significant role of ion beam flux during nitriding 304 austenitic stainless steel has been investigated by using a radio frequency inductively-coupled plasma reactor into which a sample with negative bias voltage was inserted. A milliammeter is used to detect tile current of ions which collide with the sample and optical emission spectroscopy is used to discern the reactive species included in the nitrogen plasma. The nitriding efficiency is indicated by X-ray diffraction and the microhardness test. The reported data reveal that the ion beam flux density as well as the deposition pressure, bias voltage and time can strongly affect the nitriding of stainless steel via tile expanded multiphase microstructure inside the nitrided layer. The increase in the density of ion flux results in an ascent in the intensity of the expanded peak and a simultaneous decline in the intensity of the 3＇ austenite peak. The evolution trend of ion beam flux density is described as a function of tile operating pressure and the bias voltage. The maxinmm ion flux density has been achieved at 10 Pa pressure and 500 V bias voltage. A reasonable nitriding region has been, consequently, suggested after comparing this work with previously reported results.     

Effect of Ar Ion Beam Implantation on Morphological and Physiological Characteristics of Liquorice （Glycyrrhiza uralensis Fisch） Under Short-Term Artificial Drought Conditions

Ar^＋ ion beam with low energy of 30 keV was implanted into liquorice （Glycyrrhiza uralensis Fisch） seeds at the doses of 0, 600, 900 and 1200 × （2.6 × 10^13） ions/cm^2, respectively. The seeds were sowed in pots and after one month the plants were subjected to different drought conditions for two months. Then the plants＇ morphological and physiological characteristics, antioxidation enzymes and levels of endogenous hormones were investigated. The results showed that ion implantation at a proper dose can greatly enhance the liquorice seedlings＇ resistance against drought stress.     

Enhancement of Gongronella sp. JG Chitosanase Production by Ion Beam Implantation

Gongronella sp. JG was a fungal strain which expressed extracellular chitosanase of about 800 U/L during its growth in production medium. To improve its enzyme production, low energy N＋ implantation was employed to mutate spores of JG. The implantation condition was optimized and the parameters of 15 keV and 60 × breeding experiments. A mutant designated as SG 2.6 × 10^13 ions/cm^2 were selected for further was obtained. It showed increased chitosanase production （1800 U/L） and shortened cultivation period （from 72 h to 60 h）. Five-generation cultivation of SG indicated that its chitosanase production was stable at about 1800 U/L.     

A practical image reconstruction and processing method for symmetrically off-center detector CBCT system

CBCT scanners have been widely used in angiography, radiotherapy guidance, mammography and oral maxillofacial imaging. To cut detector size, reduce manufacturing costs and radiation dose while keeping a reasonable FOV, the flat panel detector can be placed off-center horizontally. This scanning configuration extends the FOV effectively. However, each projection is transversely truncated, bringing errors and artifacts in reconstruction. In this paper, a simple but practical method is proposed for this scanning geometry based on truncation compensation and the modified FDK algorithm. Numerical simulations with jaw phantom were conducted to evaluate the accuracy and practicability of the proposed method. A novel CBCT system for maxillofacial imaging is used for clinical test, which is equipped with an off-center small size flat panel detector. Results show that reconstruction accuracy is acceptable for clinical use, and the image quality appears sufficient for specific diagnostic requirements. It provides a novel solution for clinical CBCT system, in order to reduce radiation dose and manufacturing cost.     

Using Adaptive Discrete-Time Gas Supply Control for Long Pulse Arc Discharge of Ion Source on NBI

A control model of gas supply system is introduced for ion source and an adaptive discrete-time control algorithm to regulate the hydrogen injection. A real-time feedback control system （RFCS） is designed to control the gas supply for ion source based on the control model and the discrete-time control algorithm. The experimental results have proved that RFCS could regulate the gas supply smoothly, suppress the arc＇s abrupt over-current at the end of the ion source discharging, prolong the discharge pulse and stabilize the ion concentration. With RFCS, the ion source for neutral beam injection has reached its longest pulse with a length of 4.5 seconds in a stable status.     

Enhancement of L（＋）-Lactic Acid Production of Immobilized Rhizopus Oryzae Implanted by Ion Beams

Immobilized Rhizopus oryzae culturing may be a solution to the inhibited production of L（＋）-lactic acid in submerged fermentation, which is caused by aggregated mycelia floc. In the present study, a R. oryzae mutant （RL6041） with a 90% conversion rate of glucose into L-lactic acid was obtained by N＋ implantation under the optimized conditions of a beam energy of 15 keV and a dose of 2.6 ×10^15 ions/cm^2. Using polyurethane foam as the immobilization matrix, the optimal L-lactic acid production conditions were determined as 4 mm polyurethane foam, 150 r/min, 50 g/L ～ 80 g/L of initial glucose, 38℃ and pH 6.0. 15-cycle repeated productions of L-lactic acid by immobilized RL6041 were performed under the optimized culturing conditions and over 80% of the glucose was converted into L-lactic acid in 30 hours on average. The results show that immobilized RL6041 is a promising candidate for continuous L-lactic acid production.     

Purification and Properties of a New L-Sorbose Dehydrogenase Accelerative Protein from Bacillus megaterium Bred by Ion-Beam Implantation

Bacillus megaterium BM302 bred by ion-beam implantation produces L-sorbose dehydrogenase accelerative protein （SAP） to accelerate the activity of L-sorbose dehydrogenase （SDH） of Gluconobacter oxydans in the 2-keto-L-gulonic acid （2KLG） fermentation from L-sorbose by the mixed culture of B. megaterium BM302 and G. oxydans. The SAP purified by three chromatographic steps gave 35-fold purification with a yield of 13% and a specific activity of 5.21 units/mg protein. The molecular weight of the purified SAP was about 58 kDa. The SDH accelerative activity of SAP at pH 7 and 50℃ was the highest. Additionally, it retained 60% activity at a pH range of 6.5 ～ 10 and was stable at 20℃ ～ 60℃. After 0.32-unit SAP was added to the single cultured G. oxydans strains, the SDH activity was apparently accelerated and the 2KLG yield of GO29, GO112, GO and GI13 was enhanced 2.1, 3.3, 3.5 and 2.9 folds respectively over that of the strains without the addition of SAP.     

Three-Dimensional PIC-MC Modeling for Relativistic Electron Beam Transport Through Dense Plasma

We have developed a three dimensional （3D） PIC （particle-in-cell）-MC （Monte Carlo） code in order to simulate an electron beam transported into the dense matter based on our previous two dimensional code. The relativistic motion of fast electrons is treated by the particle-in-cell method under the influence of both a self-generated transverse magnetic field and an axial electric field, as well as collisions. The electric field generated by return current is expressed by Ohm＇s law and the magnetic field is calculated from Faraday＇s law. The slowing down of monoenergy electrons in DT plasma is calculated and discussed.     

Mutagenic Effects of BM302：GO112 Induced by Low-Energy Ion Beam Implantation

Mutant strains of GO112 and BM302 with a high 2-keto-L-gulonic acid （2KLG） transformation rate induced by ion beam implantation were separately and combinatorially compared with the original strains GO29 and BM80 to study the mutagenic effects of ion beam implantation. Both the sole GOl12 and mixed BM302：GOl12 demonstrated improved SNDH activity and 2KLG yield compared to the original strains. The mutant combinations of BM302：GOl12 showed a longer stationary phase and higher biomass than BM80：GO29. The mutant BM302 exhibited a stronger capacity to maintain a stable pH environment at mixed fermentation with Gluconobacter oxydans （G. oxydans） for 2KLG transformation and facilitated the growth of G. oxydans compared with the original strain BM80. The promotive capacity to L-sorbosone dehydrogenase （L-SNDH） from the supernate of BM302 was 1.6-fold higher than that of BM80. Genes encoded SNDH in GO29 and GOl12 were amplified and sequenced, and mutations including three transitions （CG →TA, CG →TA, GC → AT） and one transversion （AT→ TA） were confirmed from GO29 to GOl12. The corresponding amino acid was changed as Leu →Phe, Arg → Gln and Asn → Lys.     

Impact of Ion Implantation on Licorice （Glycyrrhiza uralensis Fisch） Growth and Antioxidant Activity Under Drought Stress

Low energy ion beams are known to have stimulation effects on plant generation and to improve plants＇ intrinsic quality. In the present study, the growth and physiological index of licorice implanted with 0, 8, 10; 12 and 14× （2.6× 10^15） ions/cm^2 were investigated under well-watered and drought-stress conditions. The results showed that a proper dose of ion implan- tation was particularly efficient in stimulating the licorice growth and improving the plant biomass significantly in both the well-watered and drought-stress conditions. The physiological results of licorice measured by leaf water potential, lipid oxidation, soluble protein and antioxidant system showed a significant correlation between ion implantation and water regime except for leaf water potential. Therefore, the study indicated that ion implantation can enhance licorice＇s drought tolerance by increasing the activity of superoxide dismutase （SOD）, eatalase （CAT） and DPPH （1,1-diphenyl-2-picrylhydrazyl） radical scavenging ability to lower oxidative damage to lipids in plants. Ion beam implantation, therefore, provides an alternative method to enhance licorice drought tolerance.     

A New Three-Dimensional Code for Simulation of Ion Beam Extraction： Ion Optics Simulator

A new thee-dimensional code, ion optics simulator （IOS）, to simulate ion beam extraction is developed in visual C＋＋ language. The theoretical model, the flowchart of code, and the results of calculation as an example are presented.     

Analysis and Optimization of Stability of CAS-LIBB Single Ion Microbeam

Single ion microbeam is the most advanced technology which can emit a single ion for precise localization. A single-ion microbeam facility has been constructed at the Key Laboratory of Ion Beam Bioengineering （LIBB）, Chinese Academy of Sciences （CAS）, with a spatial resolutions of about 5 μm. Based on CAS-LIBB microbeam, three key elements affecting the quality of the system are assessed： the size of beam spot, the energy range and the counting accuracy of implanting ions. Various contributions to the ion beam stability, including the ion source, the terminal voltage of electrostatic accelerator and the components in beam pipeline, are discussed. Analysis shows that the improvement of terminal voltage stability is the most important issue for future optimization of CAS-LIBB facility. Some preliminary investigations and project aimed at optimization and development are proposed as well.     

Simulation of Electron-Beam Generating Plasma at Atmospheric Pressure

As electron-beam generating plasma is widely applied, the software tool EGS4 （Electron-Gamma Shower） was used to simulate the transmission and energy deposition of electron-beam in air. The simulation results indicated that the range of the electron-beam was inversely proportional to the gas pressure in a wide range of gas pressure, and the electron-beam of 200 keV could generate a plasma with a density 10^11 cm^-3 in air of latm. In addition, the energy distribution of the beam-electron and plasma density profile produced by the beam were achieved.     

Bioeffects of Low Energy Ion Beam Implantation： DNA Damage, Mutation and Gene Transter

Low-energy ion beam implantation （10 - 200 keV） has been proved to have a wide range of biological effects and is broadly used in the breeding of crops and micro-organisms.To understand its mechanisms better and facilitate its applications, the developments in the bioeffects of low energy ion beam implantation in the past twenty years are summarized in this paper.     

Analysis of a Partial Male-Sterile Mutant of Arabidopsis thaliana Isolated from a Low-Energy Argon Ion Beam Mutagenized Pool

A screen for Arabidopsis fertility mutants, mutagenized by low-energy argon ion beam, yielded two partial male-sterile mutants tc243-1 and tc243-2 which have similar phenotypes. tc243-2 was investigated in detail. The segregation ratio of the mutant phenotypes in the M2 pools suggested that mutation behaved as single Mendelian recessive mutations, tc243 showed a series of mutant phenotypes, among which partial male-sterile was its striking mutant characteristic. Phenotype analysis indicates that there are four factors leading to male sterility, a. Floral organs normally develop inside the closed bud, but the anther filaments do not elongate sufficiently to position the locules above the stigma at anthesis, b. The anther locules do not dehisce at the time of flower opening （although limited dehiscence occurs later）, c. Pollens of mutant plants develop into several types of pollens at the trinucleated stage. as determined by staining with DAPI （4＇,6-diamidino-2-phenylindole）. which shows a variable size. shape and number of nucleus. d. The viability of pollens is lower than that of the wild type on the germination test in vivo and vitro.     

Analysis of the Anomalous Phenomenon in the Retarding Potential Analyzer Measurements

An anomalous phenomenon was observed in the retarding potential analyzer （RPA） measurements of the energy of the ion beam from an 8 cm argon ion source. The current-voltage （Ⅰ- Ⅴ） curve, which should theoretically descend, went up as the ion retarding potential was increased. Various explanations, such as the Townsend discharge theory and secondary electron emission etc. were proposed but denied by the theory application condition or the experiment results. An angle of about -10° was found between the axes of the ion beam and the RPA according to the contours of the ion beam density and direction. The particle simulation and experiment of the sum of the collector and wall current were conducted at different incident ion angles. The trends of the Ⅰ- Ⅴ curve in simulation results conformed with the experimental results in most cases. The ion trajectories were simulated at different retarding potentials with an incident angle of -10°. According ：to these results, the reason for the anomalous phenomenon is that when there is a specific angle between the axes of the ion beam and the RPA, more ions are repelled from the vicinity of the ion retarding grid to avoid striking on the grid as the ion retarding potential increases. These redundant ions reach the plate and thus lead to the formation of an ascending Ⅰ- Ⅴ curve.     

Study on Integral Expression in Measurement of Average Ion Velocity by Multi-Grid Probe

In order to improve the interference rejection performance in the measurement of average ion velocity by multi-grid probe, an integral expression is proposed. The integral expression, differing from other expressions for probe measurement, avoids the differential operation on the I-V characteristics of multi-grid probe measurement; and by this method, the ion average velocity can be figured out directly by the I-V characteristics of multi-grid probe measurement.     

Numerical and Experimental Investigation of Electron Beam Air Plasma Properties at Moderate Pressure简

Large size of air plasma at near atmospheric pressure has specific effects in aerospace applications. In this paper, a two dimensional multi-fluid model coupled with Monte Carlo （MC） model is established, and some experiments were carried out to investigate the characteristics of electron beam air plasma at pressure of 100-170 Torr. Based on the model, the properties of electron beam air plasma are acquired. The electron density is of the order of 1016 m-3 and the longitudinal size can exceed 1.2 m. The profiles of charged particles demonstrate that the oxygen molecule is very important for air plasma and its elementary processes play a key role in plasma equilibrium processes. The potential is almost negative and a very low potential belt is observed at the edge of plasma acting as a protection shell. A series of experiments were carried out in a low pressure vacuum facility and the beam plasma densities were diagnosed. The experimental results demonstrate that electron density increased with the electron beam energy, and the relatively low pressure was favorable for gaining high density plasma. Hence in order to achieve high density and large size plasma, it requires the researchers to choose proper discharge parameters.     

A Prototype of beam position and phase measurement electronics for the LINAC in ADS

This article presents a prototype of beam position and phase measurement （BPPM） electronics designed for the LINAC in China Accelerator Driven Sub-critical system （ADS）. The signals received from the Beam Position Monitor （BPM） detectors are narrow pulses with a repetition frequency of 162.5 MHz and a dynamic range more than 40 dB. Based on the high-speed high-resolution Analog-to-Digital conversion technique, the input RF signals are directly converted to In-phase and Quadrature-phase （1Q） streams through under-sampling, which simplifies both the analog and digital processing circuits. All signal processing is integrated in one single FPGA, in which real-time beam position, phase and current can be obtained. A series of simulations and tests have been conducted to evaluate the performance. Initial test results indicate that this prototype achieves a phase resolution better than 0.1 degree and a position resolution better than 20 grn over a 40 dB dynamic range with the bandwidth of 780 kHz, which is well beyond the application requirements.