Packaging effect investigation of WL-CSP with a central opening: A case study on pressure sensors

This study reports the packaging effects of wafer-level chip scale packaging (WL-CSP) with a central opening on piezoresistive pressure sensors. A regular pressure sensor with calculated sensitivity of 3.1 × 10^?2 mVV^?1 kPa^?1 and a sensitive pressure sensor with calculated sensitivity of 32.0 × 10^?2 mVV^?1 kPa^?1 are investigated. A finite element (FE) model validated by experimental measurements is used to explore the sensing characteristics of the pressure sensors. The results show that the output variation of the packaged pressure sensor is dominated by the CTE mismatch not the piezoresistive coefficient change as temperature varies. WL-CSP with small polyimide (PI) thickness and large PI opening produces small packaging induced stress, making it ideal for precision sensing for both regular and sensitive pressure sensors.     

Fabrication of micro sensors on a flexible substrate

Flexible micro temperature and humidity sensors on parylene thin films were designed and fabricated using a micro-electro-mechanical-systems (MEMS) process. Based on the principles of the thermistor and the ability of a polymer to absorb moisture, the sensing device comprised gold wire and polyimide film. The flexible micro sensors were patterned between two pieces of parylene thin film that had been etched using O₂ plasma to open the contact pads. The sacrificial Cr spacer layer was removed from the Cr etchant to release the flexible temperature and humidity sensors from the silicon substrate. Au was used to form the sensing electrode of the sensors while Ti formed the adhesion layer between the parylene and Au. The thickness of the device was 7 ± 1 μm, so the sensors attached easily to highly curved surfaces. The sensitivities of the temperature and humidity sensor were 4.81 × 10⁻³ °C⁻¹ and 0.03 pF/%RH, respectively. This work demonstrates the feasibility and compatibility of thin film sensor applications based on flexible parylene. The sensor can be applied to fuel cells or components that must be compressed.     

Computer-based analysis of explicit approximations to the implicit Colebrook–White equation in turbulent flow friction factor calculation

The implicit Colebrook–White equation has been widely used to estimate the friction factor for turbulent fluid-flow in rough-pipes. In this paper, the state-of-the-art review for the most currently available explicit alternatives to the Colebrook–White equation, is presented. An extensive comparison test was established on the 20 × 500 grid, for a wide range of relative roughness (ε/D) and Reynolds number (R) values (1 × 10^?6 ? ε/D ? 5 × 10^?2; 4 × 10³ ? R ? 10⁸), covering a large portion of turbulent flow zone in Moody’s diagram. Based on the comprehensive error analysis, the magnitude points in which the maximum absolute and the maximum relative error are occurred at the pair of ε/D and R values, are observed. A limiting case of the most of these approximations provided friction factor estimates that are characterized by a mean absolute error of 5 × 10^?4, a maximum absolute error of 4 × 10^?3 whereas, a mean relative error of 1.3% and a maximum relative error of 5.8%, over the entire range of ε/D and R values, respectively. For practical purposes, the complete results for the maximum and the mean relative errors versus the 20 sets of ε/D value, are also indicated in two comparative figures. The examination results for error properties of these approximations gives one an opportunity to practically evaluate the most accurate formula among of all the previous explicit models; and showing in this way its great flexibility for estimating turbulent flow friction factor. Comparative analysis for the mean relative error profile revealed, the classification for the best-fitted six equations examined was in a good agreement with those of the best model selection criterion claimed in the recent literature, for all performed simulations.     

Pulsed laser deposited Y-doped BaZrO3 thin films for high temperature humidity sensors

Pulsed laser deposited (PLD) Y-doped BaZrO₃ thin films (BaZr_1-xY_xO_3-y/2, x = 0.2, y > 0), were investigated as to their viability for reliable humidity microsensors with long-term stability at high operating temperatures (T > 500 °C) as required for in situ point of source emissions control as used in power plant combustion processes. Defect chemistry based models and initial experimental results in recent humidity sensor literature [1] and [2]. indicate that bulk Y-doped BaZrO₃ could be suitable for use in highly selective, high temperature compatible humidity sensors. In order to accomplish faster response and leverage low cost batch microfabrication technologies we have developed thin film deposition processes, characterized layer properties, fabricated and tested high temperature humidity micro sensors using these thin films. Previously published results on sputtering Y-doped BaZrO₃ thin films have confirmed the principle validity of our approach [3]. However, the difficulty in controlling the stoichiometry of the films and their electrical properties as well as mud flat cracking of the films occurring either at films thicker than 400 nm or at annealing temperature above 800 °C have rendered sputtering a difficult process for the fabrication of reproducible and reliable thin film high temperature humidity microsensors, leading to the evaluation of PLD as alternative deposition method for these films.X-ray Photoelectron Spectroscopy (XPS) data was collected from as deposited samples at the sample surface as well as after 4 min of Ar⁺ etching. PLD samples were close to the desired stoichiometry. X-ray diffraction (XRD) spectra from all as deposited BaZrO₃:Y films show that the material is polycrystalline when deposited at substrate temperatures of 800 °C. AFM results revealed that PLD samples have a particle size between 32 nm and 72 nm and root mean square (RMS) roughness between 0.2 nm and 1.2 nm. The film conductivity increases as a function of temperature (from 200 °C to 650 °C) and upon exposure to a humid atmosphere, supporting our hypothesis of a proton conduction based conduction and sensing mechanism. Humidity measurements are presented for 200–500 nm thick films from 500 °C to 650 °C at vapor pressures of between 0.05 and 0.5 atm, with 0.03–2% error in repeatability and 1.2–15.7% error in hysteresis during cycling for over 2 h. Sensitivities of up to 7.5 atm⁻¹ for 200 nm thick PLD samples at 0.058 atm partial pressure of water were measured.     

Characterization of RF sputtered thin film potassium sodium niobate (KNN) with silicon and nickel electrodes

A low cost recipe for thin film deposition of Potassium Sodium Niobate, (Na,K)NbO₃ (KNN) is pursued. The use of expensive noble metals as electrodes was avoided and instead highly doped silicon was used for both the structural layer and the bottom electrode. Nickel was used for the top electrode. In order to evaluate the outcome, the films were studied in terms of stoichiometry, crystal structure and leakage current density. RF sputtering of thin films of KNN at room temperature was successfully done. Proper crystal structure (Perovskite structure) was achieved after post deposition annealing. Though the leakage current density exhibited high dependency on the polarity of the applied voltage, a leakage current density of 1 × 10⁻⁶ A/cm² at 100 kV/cm was measured. A stoichiometry study revealed that the relative ratio of the volatile elements (Na and K) in the samples was within the acceptable range, however, a total loss of about 25–33 % was observed.

     

Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors

The structural, optical, and electrical properties of Si‐doped SnO₂ (STO) films were investigated in terms of their potential applications for flexible electronic devices. All STO films were amorphous with an optical transmittance of ~90%. The optical band gap was widened as the Si content increased. The Hall mobility and carrier density were improved in the SnO₂ with 1 wt% Si film, which was attributed to the formation of donor states. Si (1 wt%) doped SnO₂ thin‐film transistor exhibited a good device performance and good stability with a saturation mobility of 6.38 cm²/Vs, a large I_on/I_off of 1.44 × 10⁷, and a SS value of 0.77 V/decade. The device mobility of a‐STO TFTs at different bending radius maintained still at a high level. These results suggest that a‐STO thin films are promising for fabricating flexible TFTs.     

Evaluation of response characteristics of resistive oxygen sensors based on porous cerium oxide thick film using pressure modulation method

In order to reduce the response time of resistive oxygen sensors using porous cerium oxide thick film, it is important to ascertain the factors controlling response. Pressure modulation method (PMM) was used to find the rate-limiting step of sensor response. This useful method measures the amplitude of sensor output (H(f)) for the sine wave modulation of oxygen partial pressure at constant frequency (f). In PMM, “break” response time, which is minimum period in which the sensor responds precisely, can be measured. Three points were examined: (1) simulated calculations of PMM were carried out using a model of porous thick film in which spherical particles are connected in a three-dimensional network; (2) sensor response speed was experimentally measured using PMM; and (3) the diffusion coefficient and surface reaction coefficient were estimated by comparison between experiment and calculation. The plot of log f versus log H(f) in the high f region was found to have a slope of approximately −0.5 for both porous thick film and non-porous thin film, when the rate-limiting step was diffusion. Calculations showed the response time of porous thick film was 1/20 that of non-porous thin film when the grain diameter of the porous thick film was the same as the thickness of non-porous thin film. At 973 K, “break” response time (t_b) of the resistive oxygen sensor was found by experiment to be 109 ms. It was concluded that the response of the resistive oxygen sensor prepared in this study was strongly controlled by diffusion at 923–1023 K, since the experiment revealed that the slope of plot of log f versus log H(f) in the high f region was approximately −0.5. At 923–1023 K, the diffusion coefficient of oxygen vacancy in porous ceria (D_V) was expressed as follows: D_V (m²s⁻¹) = 5.78 × 10⁻⁴ exp(−1.94 eV/kT). At 1023 K, the surface reaction coefficient (K) was found to exceed 10⁻⁴ m/s.     

Electrical properties of nickel oxide thin films for flow sensor application

In this work, Ni oxide thin films, with thermal sensitivity superior to Pt and Ni thin films, were formed through annealing of Ni films deposited by a r.f. magnetron sputtering. The annealing was carried out in the temperature range of 300–500 °C under atmospheric conditions. Resistivity of the resulting Ni oxide films were in the range of 10.5 μΩ cm/°C to 2.84 × 10⁴ μΩ cm/°C, depending on the extent of Ni oxidation. The temperature coefficient of resistance (TCR) of the Ni oxide films also depended on the extent of Ni oxidation; the average TCR of Ni oxide resistors, measured between 0 and 150 °C, were 5630 ppm/°C for the 300 °C and 2188 ppm/°C for 500 °C films. Because of their high resistivity and very linear TCR, Ni oxide thin films are superior to pure Ni and Pt thin films for flow and temperature sensor applications.     

Influence of Cs doping in spray deposited SnO2 thin films for LPG sensors

Detection of low concentrations of petroleum gas was achieved using transparent conducting SnO₂ thin films doped with 0–4 wt.% caesium (Cs), deposited by spray pyrolysis technique. The electrical resistance change of the films was evaluated in the presence of LPG upon doping with different concentrations of Cs at different working temperatures in the range 250–400 °C. The investigations showed that the tin oxide thin film doped with 2% Cs with a mean grain size of 18 nm at a deposition temperature of 325 °C showed the maximum sensor response (93.4%). At a deposition temperature of 285 °C, the film doped with 3% Cs with a mean grain size of 20 nm showed a high response of 90.0% consistently. The structural properties of Cs-doped SnO₂ were studied by means of X-ray diffraction (XRD); the preferential orientation of the thin films was found to be along the (3 0 1) directions. The crystallite sizes of the films determined from XRD are found to vary between 15 and 60 nm. The electrical investigations revealed that Cs-doped SnO₂ thin film conductivity in a petroleum gas ambience and subsequently the sensor response depended on the dopant concentration and the deposition temperature of the film. The sensors showed a rapid response at an operating temperature of 345 °C. The long-term stability of the sensors is also reported.     

Effect of temperature on humido-sensitive conducting polymer actuators

Temperature dependence of water vapor sorption and electro-active polymer actuating behavior of free-standing films made of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT/PSS) was investigated by means of sorption isotherm and electromechanical analyses. The non-porous PEDOT/PSS film, having a specific surface area of 0.13 m² g^?1, sorbed water vapor of 1080 cm³(STP) g^?1, corresponding to 87 wt%, at relative water vapor pressure of 0.95. A temperature rise from 25 °C to 40 °C lowered sorption degree, indicative of an exothermic process, where isosteric heat of sorption decreased with increasing water vapor sorption and the value reached 43.9 kJ mol^?1, being consistent with the heat of water condensation (44 kJ mol^?1). Upon application of 10 V, the film underwent contraction of 2.46% at 5 °C caused by desorption of water vapor due to Joule heating, which slightly decreased to 2.10% at 45 °C. The speed of contraction was one order of magnitude faster than that of expansion and less dependent on the temperature since water vapor sorbed in the film were forced to desorb by Joule heating. In contrast, the higher the temperature the faster the film expansion because diffusion coefficient increased as the temperature became higher.     

Measurement of static and dynamic mechanical behavior of micro and nano-scale thin metal films: using micro-cantilever beam deflection

We present the results of a novel micro-beam deflection test used to investigate the static and dynamic mechanical behavior of submicron-thick metal films. The method demonstrated in this study allows researchers to observe the motion of micro and nano-scale thin films responding to electrostatic loads, by means of laser reflection measurements at frequency rates of up to 500 Hz. Researchers fabricated a supporting frame and a novel triangular shaped “paddle” beam designed to provide uniform plane stress distribution while undergoing deflection. A simple geometric calculation, based on cantilever deflection, enabled the degree of strain to be determined, which in turn provided the Young’s modus for aluminum film of a given thickness. We also studied the dynamic behavior using the dynamic frequency response of the beam, generated by electrostatic forces under various loads and vacuum pressure conditions. Our results showed that air damping has a significant influence on the free damping behavior of specimens, and only a minor influence on damping frequency. We determined the loss angle and frequency using sweep frequency and free damping methods, which were very consistent with paddle resonant frequencies. The loss angle obtained from a simple silicon micro-beam was 2.001 × 10^−4°using the free damping method and 2.23 × 10^−4°using the sweep frequency method. The dynamic response loss mechanism measured in this experiment provides incentive for the further study of grain boundary motion and dislocation motion in thin films.     

Development of novel PZT thin films for active sliders based on head load/unload on demand systems

 Micromachined active sliders based on head load/unload on demand systems is an interesting concept technology for ultra-high magnetic recording density of more than 100 Gb/in². The active sliders that we proposed use PZT thin films as a microactuator and control the slider flying height of less than 10 nm. It is necessary to develop high performance microactuators in order to achieve active sliders operating at very low applied voltage. This paper describes the development of novel PZT thin films for active sliders. The sol–gel fabrication process for PZT thin films is developed and the fundamental characteristics for the PZT thin films are investigated. It is confirmed that the PZT thin films have good ferroelectric properties. Furthermore, novel thin film microactuators are proposed. The feature is that the sol–gel PZT thin films (thickness 540 nm) are deposited on the sputtered PZT thin films (thickness 300 nm) fabricated on bottom Pt/Ti electrodes. Therefore, the novel thin films consist of a thermal SiO₂ layer and the sputtered and sol–gel PZT thin films layers sandwiched with upper Pt and bottom Pt/Ti electrodes on a Si slider material. Fabricating the diaphragm microactuator, the piezoelectric properties for the novel composite PZT thin films are studied. As a result, the piezoelectric strain constant d ₃₁ for the novel PZT thin films is identified to be 130 × 10⁻¹² m/V. This value is higher than conventional monolithic PZT thin films and it is found that the novel composite PZT thin films have the good piezoelectric properties. This suggests the feasibility of realizing active sliders operating at lower voltage under about 10 V. Received: 22 June 2001/Accepted: 17 October 2001     

Performance enhancement of solution-processed amorphous WZTO TFT with HAO gate dielectric via power ultrasound technology

In this paper, power ultrasound technology (PUT) is employed to prepare the high-k hafnium-aluminum oxide (HAO) dielectric and thin film transistor (TFT). The continuous propagation of high-intensity ultrasonic waves in the metal oxide precursor solution can improve the dissolution efficiency of the solute and speed up the formation of the HAO precursor solution. The prepared HAO films have a smooth surface roughness of 0.36 nm and high optical transmittance of 85 %. Moreover, HAO films obtain excellent electrical properties with a relative permittivity of 15.9 and a leakage current density of 9.1 × 10⁻⁸ A/cm² at 2 MV/cm as well. Finally, we successfully fabricate TFT with HAO dielectric using PUT, these TFTs exhibit switch characteristics with field effect mobility of 18.7 cm²v⁻¹s⁻¹, threshold voltage (V_th) of −0.47 V, and Vth shift of 0.35 V under positive gate bias stress. The results show that the PUT is a promising method that can remarkably decrease the preparation time of the precursor solution and improve the TFT performance.     

Synthesis of ZnO thin films and their application as humidity sensors

Humidity sensors were fabricated using ZnO thin films synthesized on a Si wafer substrate. The ZnO thin films were grown via a vapor solid (VS) approach at temperatures ranging from 400 to 700 °C. Experiments were executed to observe the relationships between the relative humidity (RH) and resistance of these devices fabricated under various VS temperatures. Experimental results show that the ZnO thin films grown at a temperature of 700 °C using the VS approach exhibits an optimum sensitivity to humidity. The measured sensor resistance ranges from 495 × 10⁶ to 46 × 10³ Ω for RH ranging from 11 to 95 % at room temperature. The variance of sensor resistance exceeds 10⁴ times, indicating that the proposed method can produce a highly sensitive humidity sensor.     

Dynamically modulated intensity interrogation scheme using waveguide coupled surface plasmon resonance sensors

An electro-optically modulated intensity interrogation method based on tunable waveguide coupled surface plasmon resonance sensors has been proposed. It has been theoretically and experimentally demonstrated that the proposed scheme can enable sensitive measurement of measurand variations. By modulating the refractive index in the waveguide layer, this interrogation method yields modulated signal whose amplitude is related to measurand's refractive index. This amplitude modulated signal offers a higher signal to noise ratio and eliminates additive noise in the sensor system. A preliminary investigation using saline buffers with different NaCl concentrations shows a resolution of 2.3 × 10^?6 refractive index unit by our approach. Resolution can be controlled by the amplitude of the applied modulation voltage and can be further enhanced by optimizing the device structure or improving the electro-optical (E-O) coefficient of the E-O material. This approach is simple, stable, and promising for low-cost or multi-channel SPR biosensor applications.     

Magnetic tunnel junction sensors with pTesla sensitivity

Ultrasensitive magnetic field sensors at low frequencies are necessary for several biomedical applications. Suitable devices can be achieved by using large area magnetic tunnel junction (MTJ) sensors combined with permanent magnets to stabilize the magnetic configuration of the free layer and improve linearity. However, further increase in sensitivity and consequently detectivity are achieved by incorporating also soft ferromagnetic flux guides (FG). A detailed study of tunnel junction sensors with variable areas and aspect ratios is presented in this work. In addition, the effect in the sensors transfer curve, namely in their coercivity and sensitivity, as a consequence of the incorporation of permanent magnets and FG is also thoroughly discussed. Devices consisting of MgO-based MTJ with magnetoresistance levels of ~200 %, and incorporating thin film permanent magnets (CoCrPt) and CoZrNb flux guides, could reach sensitivities of ~2,000 %/mT at room temperature, in a non-shielded environment. The noise levels of the final device measured at 10 Hz yield 3.9 × 10^?17 V²/Hz, leading to the lowest detectable field of ~49 pT/Hz^0.5. This value is half of the best value we obtained with MTJ-based devices, and represents a step further towards integration in a biomedical device for magnetocardiography.     

Fabrication of wireless sensors on flexible film using screen printing and via filling

Wireless sensors are fabricated on flexible plastic films by means of screen printing and via-hole filling. The wireless sensors are battery free with data and power transmission functions. The sensors, fabricated on polyethylene terephtalate films, are designed based on RFID technology. Using an additive patterning process known as screen printing, metallization on polymer films is created. Both sides of a polymer film are printed with metallic patterns and connected with micro vias filled with conductive paste. One side of the film consists of printed electrical traces for discrete components like resistors and transistors that would be mounted onto it; the other side consists of a printed inductive coil used for wireless data and power transmission. The micro vias, which have a diameter of 120 μm, are formed by mechanical punching and filled with conductive silver paste. The size of one sensor unit is approximately 2 cm × 1.5 cm; an array of 4 × 7 sensor units are printed over an area of 15 cm × 15 cm on a PET film. Details of manufacturing processes, component assembly and functionality test are presented in this paper.     

Micro-hotplates for high-throughput thin film processing and in situ phase transformation characterization

This paper presents the use of micro-hotplates (MHPs) as thermal processing and in situ characterization platforms for phase transformations in thin films. MHPs are fabricated by microsystem technology processes and consist of a SiO₂/Si₃N₄ membrane (app. 1 μm) supported by a bulk Si frame. Several embedded Pt thin films serve as heater and electrical measurement electrodes. It is shown that the MHPs have unique properties for the controlled annealing of thin film materials (up to 1270 K), as the annealing temperature and heating/cooling rates can be precisely controlled by in situ measurements. These rates can be extremely high (up to 10⁴ K/s), due to the low thermal mass of MHPs. The high cooling rates are especially useful for the fabrication of metastable phases (e.g. Fe₇₀Pd₃₀) by quenching. By measuring the resistivity of a thin film under test in situ as a function of the MHP temperature, microstructural changes (e.g. phase transformations) can be detected during heating and cooling cycles. In this paper, examples are presented for the determination of phase transitions in thin films using MHPs: the solid–liquid–gas phase transition (Al), the ferromagnetic–paramagnetic phase transition (Fe–Pt) and martensitic transformations (Ni–Ti–Cu, Fe–Pd). Furthermore, it is demonstrated that crystallization processes from amorphous to crystalline (Ni–Ti–Cu) can be detected with this method. Finally the application of MHPs in thin film combinatorial materials science and high-throughput experimentation is described.     

Fabrication of microfluidic devices for packaging CMOS MEMS impedance sensors

This work presents a polydimethylsiloxane (PDMS) microfluidic device for packaging CMOS MEMS impedance sensors. The wrinkle electrodes are fabricated on PDMS substrates to ensure a connection between the pads of the sensor and the impedance instrument. The PDMS device can tolerate an injection speed of 27.12 ml/h supplied by a pump. The corresponding pressure is 643.35 Pa. The bonding strength of the device is 32.44 g/mm². In order to demonstrate the feasibility of the device, the short circuit test and impedance measurements for air, de-ionized water, phosphate buffered saline (PBS) at four concentrations (1, 2 × 10⁻⁴, 1 × 10⁻⁴, and 6.7 × 10⁻⁵ M) were performed. The experimental results show that the developed device integrated with a sensor can differentiate various samples.     

Piezoresistance in chemically synthesized polypyrrole thin films

The resistance of chemically synthesized polypyrrole (PPy) thin films is investigated as a function of the pressure of various gases as well as of the film thickness. A physical, piezoresistive response is found to coexist with a chemical response if the gas is chemically active, like, e.g., oxygen. The piezoresistance is studied separately by exposing the films to the chemically inert gases such as nitrogen and argon. We observe that the character of the piezoresistive response is a function not only of the film thickness, but also of the pressure. Films of a thickness 70 nm show a decreasing resistance as pressure is applied, while for thicker films, the piezoresistance is positive. Moreover, in some films of thickness ≈70 nm, the piezoresistive response changes from negative to positive as the gas pressure is increased above ≈500 mbar. This behavior is interpreted in terms of a total piezoresistance which is composed of a surface and a bulk component, each of which contributes in a characteristic way. These results suggest that in polypyrrole, chemical sensing and piezoresistivity can coexist, which needs to be kept in mind when interpreting resistive responses of such sensors.