A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC poweramplifier with active feedback circuit technique

This paper describes the design and experimental results for a 3.2-V operation single-chip AlGaAs/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (IMMIC) power amplifier for GSM900 and DCS1800 dual-band applications. The following two new circuit techniques are proposed for implementing the power amplifier. One is an on-chip HBT bias switch which in turn switches the amplifier between 900 and 1800 MHz. The proposed switch configuration allows the switch using a high turn-on voltage of 1.3 V of AlGaAs/GaAs HBT's to operate with a 3-V low supply voltage, because the switch circuitry needs no stacked configuration. The other is an active feedback circuit (AFB) to prevent permanent failure of HBT's in the output power stage even under severe conditions of oversupply voltage and strongly mismatching load. Experimental results revealed that the proposed feedback circuit, which works as a voltage limiter, can protect the output stage HBT's from an excessive collector voltage swing even when the amplifier is operated under a condition of a 5-V oversupply voltage and a 10:1 voltage standing-wave ratio (VSWR) mismatching load. Under a normal condition of 3.2 V and a 50-Ω matching load, the IC is capable of delivering an output power of 34.5 dBm and a power-added efficiency (PaE) of 52% in a GSM900 mode, and a 32-dBm output power and a 32% PAE in a DCS1800 mode     

基于PIN开关的可重构双波段功率放大器设计

为满足5G通信中多标准、多模式系统对功率放大器的需求,提出了一种新型的可重构双波段匹配电路结构.首先,在输出匹配网络中加入分布式PIN开关,通过开关的闭合与断开实现两个双波段输出匹配电路的良好匹配;然后,基于带通滤波器理论设计的宽带输入匹配网络,能够实现1.5～2.5 GHz频段内的良好匹配.为验证方法的有效性,采用C...     

基于谐波调谐的双频高效功率放大器设计

为了满足无线通信系统对低功耗双频功放的需求,分析高效功放的阻抗条件,提出了一种新型双频输出匹配电路,包括谐波控制电路和基波匹配电路两部分.首先,通过调谐晶体管的谐波阻抗减小漏极电压和漏极电流波形的重叠,从而提高功放的效率;其次,通过公式推导得出双频阻抗匹配电路参数,将晶体管在两个频率下的最佳基波阻抗匹配至50Ω.为验证...     

微波大功率变脉冲放大器的研制

针对基于悬浮平台微波凝视关联成像系统对变脉冲宽度和大峰值功率的需求,研制了一款 X 波段变脉冲固态功率放大器。描述该放大器组件中高速漏极调制及保护电路和射频开关的实现方案,分析大功率高速漏极调制电路输出电压脉冲的影响因素,优化调制电路的负载设计,并解决功放输出射频脉冲的包络凹陷问题。经试验验证:研制的功率放大器具有散热性好,稳定工作时间长,最窄脉宽 20 ns,上升下降沿均小于 3 ns,峰值功率大于 40 W 的射频脉冲输出等特点;其漏极调制电路输出 24 V电压脉冲,上升沿小于 20 ns,下降沿约 60 ns。     

Ultrahigh-efficiency power amplifier for space radar applications

This paper describes a broad-band switch mode power amplifier based on the indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier combines the alternative Class-E mode of operation with a harmonic termination technique that minimizes the insertion loss of matching circuitry to obtain ultrahigh-efficiency operation at X-band. For broad-band Class-E performance, the amplifiers output network employs a transmission line topology to achieve broad-band harmonic terminations while providing the optimal fundamental impedance to shape the output current and voltage waveforms of the device for maximum efficiency performance. As a result, 65% power-added efficiency (PAE) was achieved at 10 GHz. Over the frequency band of 9-11 GHz, the power amplifier achieved 49%-65% PAE, 18-22 dBm of output power, and 8-11 dB gain at 4 V supply. The reported power amplifier achieved what is believed to be the best PAE performance at 10 GHz and the widest bandwidth for a switch-mode design at X-band.     

A high-efficiency 4×20 W monolithic audio amplifier forautomobile radios using a complementary D-MOS BCD technology

A monolithic quad audio power amplifier which reduces power dissipation by 45% with a music signal compared to a standard class-AB amplifier is described. A new two-stage operational amplifier, capable of providing high output current, is used for each one of eight power amplifiers. In a bridge configuration, a common-loop mode control is performed exploiting a sample-and-hold circuit. A multipower bipolar-CMOS-DMOS (BCD) technology is employed with a push-pull rail-to-rail output stage and a low-loss power switch. Experimental results are presented     

采用电流复用拓扑的宽带收发一体多功能电路

基于标准的GaAs赝配高电子迁移率晶体管(PHEMT)单片微波集成电路(MMIC)工艺设计并制备了一款宽带收发一体多功能电路芯片.该多功能芯片包含了功率放大器、低噪声放大器和收发开关.放大器采用电流复用拓扑结构实现了低功耗的目标.收发开关采用浮地结构避免了使用负电源.芯片在14～ 24 GHz工作频率的实测结果显示:接收支路噪声系数小于3.0dB,增益大于18 dB,输入及输出电压驻波比(VSWR)均小于2.0,1 dB压缩点输出功率大于0 dBm,直流功耗为60 mW;发射支路增益大于21 dB,输入输出VSWR均小于1.8,1dB压缩点输出功率大于10 dBm,直流功耗为180 mW.芯片尺寸为2 600 μm×1 800 μm.该多功能收发电路的在片测试结果和仿真结果一致,性能达到了设计要求.     

Design and Simulation of a Ka-Band TE<Subscript>11</Subscript> Mode Gyro-Traveling-Wave Amplifier

The design of a Ka-band gyrotron traveling wave amplifier with high power and wide bandwidth is presented in detail. The amplifier operates in the TE11 circular mode at the fundamental cyclotron harmonic. The distributed loss technique is adopted in the interaction circuit which guarantees the amplifier zero-drive stability. The effects of the parameters such as input power, driver frequency and magnetic field on the performance of the gyro-TWT are discussed. The simulation results show that the gain and the 3dB bandwidth of the designed Ka-band gyro-TWT are about 56.0dB and 1.8 GHz ,respectively. The peak output power and the corresponding electronic efficiency are about 100 kW and 23.8% respectively with the voltage 70 kV and the current 6A at the velocity ratio 1.0.     

CO2激光器高压高频充电电源的应用研究

为改善现有CO2激光器工频充电电源体积、重量大、充电精度低等缺点,开展高频高压充电电源的研究,研制一台采用全桥逆变结构和串联谐振软开关电路、输出电压36 kV、输出平均充电功率为10 kJ／s的高频高压充电电源。该电源系统采用三相380 VAC作为供电系统,大功率智能功率模块（IPM）作为全桥逆变电路,逆变交流信号经串联谐振电路及高频脉冲变压器得到高压脉冲信号,高压脉冲经整流给负载电容充电;同时,电源应用电压、电流双闭环控制系统,输出电压、电流经采样及放大反馈到电源控制芯片SG3525,SG3525通过判断反馈信号的大小控制输出PWM驱动信号的占空比。实验结果表明：电源输出电压36 kV,输出平均功率为10.8 kJ／s,充电效率为0.82,电源纹波系数为1％。电源系统保证了激光器稳定工作在30 Hz条件下。     

A GaN HEMT Class F Amplifier at 2 GHz With > 80% PAE

A Class F amplifier has been designed, fabricated, and tested using a GaN HEMT transistor and hybrid printed circuit board (PCB) packaging. The amplifier has a peak power-added efficiency (PAE) of 85% with an output power of 16.5 W. A gate-connected field-plated and a source-connected field-plated device of the same size and layout were measured in this topology. An output power and drain efficiency tradeoff, dependant on the drain impedance at the fundamental frequency due to the on-state resistance, is explored. A comparison between Class F and Inverse F, given particular operating conditions for this device, is made.     

基于接地式开关的三波段可重构功率放大器的设计

采用基于接地式开关的单频可重构阻抗变换网络,设计了一款可以工作在三个波段的可重构功率放大器。与其他可重构功率放大器相比,该功放输出匹配电路的设计复杂度相对较低,对各个工作频率的跨度要求很小,同时有效节约了频谱资源。为了验证方案的可行性,采用型号为CGH40010F 的GaN 晶体管设计了一款工作在1.75 GHz、2.1 GHz 和2.6 GHz 的可重构功率放大器,制作实物并进行测试。测试结果表明该结构使功放在工作的三个频段上具有良好的输出功率、效率及增益,各个频段之间的切换更加方便。     

用于W-LAN的5.8GHz InGaP/GaAs HBT MMIC线性功率放大器

介绍了一种应用于W-LAN系统的5.8 GHz InGaP/GaAs HBT MMIC功率放大器。该功率放大器采用了自适应线性化偏置电路来改善线性度和效率,同时偏置电路中的温度补偿电路可以抑制直流工作点随温度的变化,采用RC稳定网络使放大器在较宽频带内具有绝对稳定性。在单独供电3.6 V电压情况下,功率放大器的增益为26 dB,1 dB压缩点处输出功率为26.4 dBm,功率附加效率(PAE)为25%。三阶交调系数(IMD3)在输出功率为26.4 dBm时为-19 dBc,输出功率为20 dBm时低于-38 dBc,在1 dB压缩点处偏移频率为20 MHz时邻道功率比(ACPR)值为-31 dBc。     

Attenuation compensation in distributed amplifier design

A high-gain common-gate FET that presents at its drain a broadband impedance characterized by a (frequency-dependent) negative resistance and a capacitance is examined theoretically and experimentally. Loading the input and/or the output lines of a distributed amplifier with this circuit reduces the signal losses, leading to an increase in the allowed number of active devices with a consequent increase in the gain-bandwidth and gain-maximum-frequency products. The cascode circuit, a related loss reduction network, is also evaluated because of its use in distributed amplifiers. Several designs employing the common-gate FET loss-compensating circuit and/or the cascode amplifying circuit are compared to a conventional distributed amplifier optimized for gain-bandwidth product. Simulated gain-maximum-operating frequency product increases of 27% to 245% over that of the optimized conventional distributed amplifier are shown. The increase in single-stage amplifier gain provided by this technique often results in (proportionally) higher maximum output power     

8GHz-18GHz限幅开关放大器组件

文中介绍了一种限幅开关放大器组件的设计。该组件在接收大信号时通过控制信号来控制射频开关,使信号直通通过;接收小信号时通过控制信号来控制射频开关,使信号通过放大器放大输出,从而使输入信号功率在大范围变化时输出信号保持在一定范围内,起到扩展动态范围的作用。其主要特点是频带宽、增益高、开关速度快。限幅器的作用是使组件在有超出...     

一种高效率逆F类Doherty射频功率放大器

为了进一步提高射频功放的输出能力,基于GaN HEMT功率器件,采用平衡式结构设计了一款工作频率为3.3 GHz 3.6 GHz的高效率逆F类Doherty结构射频功放。参照功放管的寄生参数等效电路网络,为获得逆F类功放理想的开关特性,设计了具有寄生参数补偿作用的谐波控制网络来抑制功放输出端的二次、三次谐波,同时结合Doherty功放结构特点,使其在6 dB功率回退的情况下仍具有较高的输出效率。仿真后,可得到其在3.3 GHz^3.6 GHz工作频带内的输出功率在40.4 dBm^41.8 dBm内,PAE为66%~77%,最大DE达到82.6%,功率回退6 dB处,功放的DE仍在69%左右,增益平坦度约为±1.5 dB。     

Class-E/sub M/ switching-mode tuned power amplifier-high efficiency with slow-switching transistor

In class-E switching-mode power amplifiers, the switch-current waveform includes a step change ("jump"), approximated by a ramp of <15% of the period. At a transistor's highest useful frequency, the large input drive required for fast-enough switching yields marginal power gain. Objective: a high-efficiency power amplifier with jumpless current and voltage waveforms. Previously, that was proven impossible for amplifiers using only linear passive components and an ideal switch. We present the theory of a new topology that does achieve the objective: a class-E amplifier with nonlinear passive or active components in the load network. A "biharmonic" version was simulated, built, and tested. It comprises a main stage switching at the output frequency f/sub 1/, drawing DC power of approximately 3/4(P/sub OUT RF//drain efficiency), and an auxiliary amplifier switching at 2f/sub 1/, injecting 2f/sub 1/-current into the circuit node at the main-stage transistor's output port to shape jumpless voltage and current waveforms. That switching (nonlinear) output port converts 2f/sub 1/ power from the auxiliary amplifier to approximately 1/4 of the f/sub 1/ power at the load. Computer simulation, and measurement on a scaled-frequency 3.5-MHz prototype, show that switching losses practically disappear when the main-stage switch is operated in the jumpless regime.     

The class BD high-efficiency RF power amplifier

Class B and class D operation of the same RF power amplifier circuit is not normally possible because of constraints imposed by the tuned output circuit and DC power input circuit. The use of square-wave drive in a current switching class D RF amplifier circuit allows the amplifier to move gradually from current source to current switch operation. This amplifier, called class BD, has a linear transfer characteristic (drive envelope to output envelope) and an efficiency 1.23 times that of a class B RF amplifier with the same peak output. The addition of a resistive AC current path to ground in the DC power input circuit of the class BD RF amplifier allows operation with sinewave driving waveforms. While this lowers the efficiency at the peak output, it can raise it at lower outputs, making possible a factor of 1.57 improvement in efficiency in the amplification of signals with large peak-to-average ratios. The class BD RF amplifier may therefore be used as a broad-band replacement for a Doherty-type amplifier.     

2.5W低噪声CMOSD类音频功放设计

提出了一种基于0.5μm5VCMOS工艺的低噪声PWM调制D类音频功率放大器。该放大器在5V电源电压下以全桥方式可以驱动4Ω负载输出2.5W功率;转换效率等于87%,信噪比达94dB(负载8Ω,输出功率1W);THD+N仅0.05%(负载4Ω,输出功率1W);PSRR为68dB(频率1kHz)。分析了整体电路结构及其线性化模型,并着重介绍了高性能前置斩波稳定运算放大器(开环增益117dB,等效输入噪声16μV.Hz-1/2),线性三角波振荡电路(斜率偏差仅±0.2%)和功率器件、驱动电路的设计。最后给出了D类放大器的测试结果。     

超磁致伸缩伺服阀用伺服放大器的设计及分析

为驱动超磁致伸缩伺服阀,结合超磁致伸缩执行器驱动电源与伺服阀用伺服放大器的性能要求设计了超磁致伸缩伺服阀用伺服放大器,并建立了其电路模型,仿真分析了功率运算放大器的开环增益对其输出性能的影响.仿真结果表明,在功率运算放大器开环增益大于80 dB时,电路特性可满足设计要求.在驱动负载为额定值时,测试结果表明,样机的输出电流线性度为3％;输出电流2A时,其阶跃响应的调节时间小于0.5 ms,幅频宽可达2 kHz;在驱动频率小于1 kHz时,输出电流失真小且无相位滞后.     

基于GaAs HBT工艺的高增益宽带Doherty功率放大器设计

在传统Doherty功率放大器的基础上,采用砷化镓(GaAs)异质结双极晶体管(HBT)工艺,设计了一款可应用于5G通信N79频段(4.4~5 GHz)的高回退效率MMIC Doherty功率放大器(DPA)。通过在Doherty电路中采用共射-共基结构,并在共射-共基结构中加入共基极接地电容,大幅提升了DPA的增益和输出功率。使用集总元件参与匹配,减小了芯片的面积。仿真结果表明,在目标频段内,增益大于28 dB,饱和输出功率约为38 dBm,饱和附加效率(PAE)为63%,7 dB回退处的效率达到43%。