共查询到16条相似文献,搜索用时 171 毫秒
1.
针对隧道再生半导体激光器,建立了内部的热源分布模型,利用有限元方法模拟计算得到了两有源区隧道再生半导体激光器稳态三维温度分布.模拟结果表明,靠近衬底的有源区的光出射腔面中心的温度最高.在平行于结的方向上,温升集中在脊形电极内;在垂直于结的方向上,靠近衬底的有源区温度始终高于靠近热沉的有源区的温度;沿腔长方向,在光反射腔面附近温度下降较快.随着注入电流的增大,两有源区的温度升高,温差变大.实验测量了不同注入电流下器件的峰值波长,将其转换为温升,与模拟结果吻合. 相似文献
2.
针对隧道再生半导体激光器,建立了内部的热源分布模型。利用有限元方法模拟计算得到了两有源区隧道再生半导体激光器在不同占空比下工作时的热弛豫积累过程。模拟结果表明,芯片达到平衡前的热弛豫积累时间和达到热平衡时的温度均随注入电流占空比的增加而增加,热弛豫积累时间小于200ms。芯片内部温度分布表明,靠近衬底的有源区温度略高于靠近热沉的有源区温度,但温度差较小,热效应造成的波长漂移不会造成双峰现象。实验测量了在相同的边界条件下,不同占空比下器件的峰值波长,将其转换为温升,与模拟结果吻合。 相似文献
3.
4.
针对半导体激光器线阵,建立了二维的热传导模型,模拟计算得到了半导体激光器线阵的二维瞬态温度分布.分析表明器件温度随时间的变化过程可分为三个阶段:在加电后几十微秒的时间内,发光单元之间未出现热交叠,不同填充比的线阵器件的温度基本一致;在几十微秒到几十或几百毫秒之间,大填充比结构线阵的发光单元之间先发生了热交叠,温度上升较快;微通道制冷的器件在几十毫秒之后温度达到稳定,平板热传导热沉封装的器件在几百毫秒之后温度才达到稳定.热传导热沉封装时,在相同的注入电流密度下,高填充比器件的发光单元之间出现温差更快. 相似文献
5.
隧道带间级联双波长半导体激光器热特性模拟 总被引:5,自引:3,他引:2
介绍了隧道带间级联双波长半导体激光器的工作机理,分析了其热量产生的根源,利用有限单元法对热传导方程进行了数值计算,得到了其在脉冲工作下的二维瞬态热分布,结果表明:随着时间的变化,有源区温度逐渐升高,靠近衬底的有源区温度略高一些,这是由于其远离热沉的原因。同时计算了不同占空比下器件内部的温度变化趋势,结果表明随着占空比增大,器件内部热量会逐渐积累,对器件特性会产生影响。 相似文献
6.
7.
8.
分析了隧道再生双有源区A lG aInP发光二极管的工作原理,测试了不同注入电流下管芯的轴向光强,得到了轴向光强随注入电流的变化关系。20 mA注入电流条件下,发射峰值波长为620 nm的隧道再生双有源区A lG aInP发光二极管,透明封装成视角15°后平均轴向光强达到5.5 cd。对透明封装成15°隧道再生双有源区发光二极管进行了寿命实验,在温度为25°C、30 mA直流电流条件下,隧道再生双有源区A lG aInP发光二极管的寿命超过了1.2×105h。 相似文献
9.
为了降低微盘腔半导体激光器工作时有源区的温度,提升封装的可靠性,基于Ansys Workbench有限元分析分别对AlN,WCu10,SiC,石墨烯,以及CVD金刚石过渡热沉封装的蜗线型微盘腔半导体激光器进行了热特性分析,得到了器件工作时的温度分布以及热应力、热应变分布.结果显示,SiC封装器件的有源区温度较AlN和WCu10封装器件分别降低了 2.18,3.078 C,并在五种过渡热沉封装器件中表现出最低的热应力,器件热应变最小.SiC过渡热沉封装可以有效降低微盘腔半导体激光器工作时的有源区温度,同时减少封装应力与器件应变,从而提高器件的散热能力和可靠性.计算结果对半导体激光器单管散热及阵列集成散热均有指导意义. 相似文献
10.
11.
The thermal management of electronic components is one of the crucial problems in the electronics industry. Heat pipes are promising thermal devices which can be used in cooling systems. An experimental study is realized in order to determine the steady-state and transient thermal performances of a water filled copper cylindrical heat pipe including helicoidal and trapezoidal capillary grooves. A test rig is developed to determine the effects of various parameters on the heat pipe thermal performance. Experiments were carried out for different heat inputs and heat sink temperatures in steady-state and transient regimes. A model is developed in order to simulate the transient thermal response of such heat pipes. The model is based on RC network circuit. The thermal resistances are determined from the steady-state experiments and the thermal capacitances are calculated theoretically. The comparison between the experimental results and the simulated ones shows a good agreement whatever the heat sink temperature and the heat input power. 相似文献
12.
As microprocessors components density and clock frequency increase, so do heat dissipation. The heat results from Joule effect due to leakage currents in the components area or active region. This region is only few microns thick and can quickly reach destructing temperatures if heat is not quickly removed. On this critical issue depends the system reliability. The active region is separated from the ventilated heat sink by a silicon substrate and a metal integrated heat spreader, both hundreds of microns thick. This interface region is the microprocessor's heat transfer plate where heat exchange is achieved by conduction. Because of the localized heat source, the thermal spreading resistance of the interface region can be high. A novel way of spreading heat in that region is the use of microchannel arrays where an appropriate thermal compound or a phase change liquid can be trapped to increase heat transfer by conduction or to create micro-heat-pipes. Traditional cooling methods, with conventional and well optimised heat sinks, can then be used with less burden.In this paper, the Transmission-Line-Matrix (TLM) technique is used to simulate the effect of microchannels on the temperature distribution in the active region. To minimize the interface heat resistance various microchannel and patterns are examined. In this part of the work, the microchannels are filled with the heat spreader material copper or aluminium. The results show an improved thermal transient behaviour and a reduced active region temperature in steady state. 相似文献
13.
《Electron Devices, IEEE Transactions on》1976,23(12):1304-1312
The current crowding due to the temperature dependence of avalanche breakdown is analyzed for the steady-state operation of an IMPATT diode mounted on a semi-infinite heat sink. The solution depends on a single new nondimensional number, the "Lambda" number, which we define here. This number can be determined from experimental data, and the current density and temperature distribution can then be determined from the results given in this paper. Experimental measurements of the I-V plot for a laboratory diode are shown to agree with the theoretical predictions. The theoretical model, which is based upon the assumption that the heat is entirely produced at the interface between the diode and the heat sink, is shown to agree with numerical results from a finite-difference program in which heat is introduced into a GaAs diode in a plane 0.5 µm above the interface. It is shown that electrical measurements of thermal resistance are related to an "effective" temperature which is about 15 percent below the temperature on the diode axis. 相似文献
14.
15.
A numerical model for calculating the emission characteristics of diode laser arrays and broad-area devices operating well above threshold is discussed. This model uses the beam propagation technique for determining the field intensities for several lateral modes, while simultaneously and self-consistently solving for the two-dimensional current flow through the laser structure and the subsequent carrier diffusion in the active region. The active-region temperature distribution is also computed in a self-consistent manner, based on the flow of heat generated in the active region through the layered device structure to a constant-temperature heat sink. The model is applied by investigating the sensitivity of the lasing modes of a broad-area diode laser to variations in the lateral temperature distribution 相似文献
16.
Our studies on the thermal crosstalk of laser arrays with integrated thin-film heaters involved theoretical as well as experimental investigations. Comparing the effects of intentional geometrical variations of the device design, we found that the relative thermal crosstalk depends critically on the distance between the active area and the film heater. The most striking result is that a minimization of the thermal resistivity of the device does not always lead to a reduced thermal crosstalk. We demonstrate that an additional heat barrier close to the active region and/or an improved heat transfer between the submount and the heat sink may reduce the relative thermal crosstalk, a result completely unexpected from intuitive considerations 相似文献