Preparation of gallium oxynitride in the presence of iron through a citrate route

Gallium oxynitrides were prepared in the copresence of various amounts of Fe³⁺ by ammonia nitridation of oxide precursors. Their crystallinity reduced in a compositional range up to 3 mol% and improved again above 4 mol% with an appearance of a nitride impurity. The product with 2 mol% of Fe³⁺ showed the maximum oxygen content of 21 mol% and minimum nitrogen content of 24 mol%. X-ray absorption spectroscopy, Mössbauer and magnetic measurements suggested a small amount of Fe₃O₄-like clusters in the oxynitride products. Density-functional calculations supported that the Fe-O-clustered system is more preferable than the statistical distribution of iron in the hexagonal gallium oxynitride structure.     

Preparation of Al-Cu-Fe thin films by vapor deposition technique from a single source

In this paper, we report the formation of stable icosahedral Al-Cu-Fe quasicrystalline thin films by thermal vapor deposition techniques (indirect heating and e-beam heating) from a single source. Deposition of these films by a single-source indirect heating method, in the stable icosahedral phase, is reported for the first time. A direct comparison between the two different heating methods has been made. The final compositions of the prepared films with desired properties were found to be Al_62.9Cu_24.6Fe_12.5 (indirect heating method) and Al_63.1Cu_24.5Fe_12.4 (e-beam method), respectively. The resistivities of the films prepared by both methods were ∼2000 μΩ cm at room temperature and ∼4000 μΩ cm at 10 K.     

Highly conductive alumina-added ZnO ceramic target prepared by reduction sintering and its effects on the properties of deposited thin films by direct current magnetron sputtering

To obtain a suitable sputtering target for depositing transparent conducting Al-doped ZnO (AZO) films by using direct current (DC) magnetron sputtering, this study investigates the possibility of using atmosphere controlled sintering of Al₂O₃ mixed ZnO powders to prepare highly conductive ceramic AZO targets. Experimental results show that a gas mixture of Ar and CO could produce a sintered target with resistivity in the range of 2.23 × 10^− 4 Ω cm. The fairly low resistivity was mainly achieved by the formation of both aluminum substitution (Al_Zn) and oxygen vacancy (V_O), thus greatly increasing the carrier concentration. Compared to usual air sintered target, the thin film deposited by the Ar + CO sintered target exhibited lower film resistivity and more uniform spatial distribution of resistivity. A film resistivity as low as 6.8 × 10^− 4 Ω cm was obtained under the sputtering conditions of this study.     

Synthesis of nanocrystalline iron oxide ultrathin films by thermal decomposition of iron nitropruside: Structural and optical properties

Ultrathin films of nanocrystalline α-Fe₂O₃ have been deposited on glass substrates from an inorganic precursor, iron nitropruside. This is a novel route of synthesis for iron oxide thin films on glass substrates, by annealing the precursor thin film in air at 650 °C for 15 min. The films were characterized using TG-DTA analysis, X-ray diffraction, UV-visible, FESEM, AFM and Raman measurements. X-ray diffraction and Raman analyses revealed that the deposited films contain α-phase of Fe₂O₃ (hematite). The synthetic route described here provides a very simple and cost-effective method to deposit α-Fe₂O₃ thin films on glass substrates with band gap energy of about 2.75 eV. The deposited films were found to show catalytic effect for the photo-degradation of phenol.     

TG/DSC analysis of Fe8(OOH)16Cl1.3 nanospindles

The thermal analysis of Fe₈(OOH)₁₆Cl_1.3 (Akaganeite-M) nanospindles prepared by the hydrolysis of FeCl₃ solutions are determined by thermogravimetric analyses and differential scanning calorimetry (TG/DSC), in conjunction with field-emission scanning electron microscopy (FE-SEM), and X-ray diffraction (XRD). Different products are formed after Fe₈(OOH)₁₆Cl_1.3 nanospindles are calcined at different temperatures for 30 min in N₂ atmosphere: Fe_1.833(OH)_0.5O_2.5 and magnetite obtained at 250 °C; pure magnetite (Fe₃O₄) obtained at 630 °C; and magnetite containing some iron nitrides (Fe₂N and Fe₄N) obtained at 800 °C. The calcination of Fe₈(OOH)₁₆Cl_1.3 provides a new method to prepare pure magnetite.     

Structural, electrical and optical studies of SILAR deposited cadmium oxide thin films: Annealing effect

Successive ionic layer adsorption and reaction (SILAR) method has been successfully employed for the deposition of cadmium oxide (CdO) thin films. The films were annealed at 623 K for 2 h in an air and changes in the structural, electrical and optical properties were studied. From the X-ray diffraction patterns, it was found that after annealing, H₂O vapors from as-deposited Cd(O₂)_0.88(OH)_0.24 were removed and pure cubic cadmium oxide was obtained. The as-deposited film consists of nanocrystalline grains of average diameter about 20-30 nm with uniform coverage of the substrate surface, whereas for the annealed film randomly oriented morphology with slight increase in the crystallite size has been observed. The electrical resistivity showed the semiconducting nature with room temperature electrical resistivity decreased from 10⁻² to 10⁻³ Ω cm after annealing. The decrease in the band gap energy from 3.3 to 2.7 eV was observed after the annealing.     

Ternary metal nitrides by the urea route

Interstitial molybdenum ternary nitrides, M_nMo₃N (M = Fe and Co, n = 3; M = Ni, n = 2), can be obtained by heating the molybdate precursors, FeMoO₄, CoMoO₄ and NiMoO₄ with urea in the 1:12 molar ratio in the 900-1000 °C range. Fe₃Mo₃N and Co₃Mo₃N are obtained in pure form. The nickel nitride has the composition Ni₂Mo₃N and therefore is in admixture with nickel. All the nitrides have been characterized by various physical methods.     

A study on the electrical properties of Pb(Zr, Ti)O3 thin films crystallized by the electrical resistive heating of Pt thin film

The electrical properties of Pb(Zr, Ti)O₃ thin films annealed by Pt thin film heater were investigated. By the thin film heater, we successfully crystallized Pb(Zr, Ti)O₃ thin films at a high temperature above 750 °C in a few seconds. The thin film heater has some advantages, such as a low thermal budget, little Pb-loss and enhanced surface morphology compared with the conventional furnace because it has a fast heating rate. The electrical properties of the Pb(Zr, Ti)O₃ thin film crystallized by thin film heater improved considerably comparing to those crystallized in conventional furnace. The remanent polarization, breakdown field, and leakage current density measured to be 22.7 μC/cm², 853 kV/cm, and 6.93 × 10⁻⁷ A/cm², respectively.     

Growth of nano-particles of Al2O3, AlN and iron oxide with different crystalline phases in a thermal plasma reactor

The paper presents the experimental results showing that the crystalline phase of the nano-particles, synthesized in a DC transferred arc thermal plasma reactor, critically depend on the operating pressure in the reaction zone. The paper reports about the changes in crystalline phases of three different compounds namely: aluminium oxide (Al₂O₃), aluminium nitride (AlN) and iron oxide (Fe_xO_y) synthesized at 760 Torr and 500 Torr of operating pressures. The major outcome of the present work is that the phases having higher defect densities are more probable to form at the sub-atmospheric operating pressures. The variations in the crystalline structures are discussed on the basis of the change in the temperature during the nucleation process, prevailing at the boundary of the plasma, on account of the ambient pressures. The as-synthesized nano-particles were examined by X-ray diffraction analysis and transmission electron microscopy. In addition, the confirmatory analysis of the crystalline phases of iron oxides was carried out with the help of Mössbauer spectroscopy.     

Aluminium doped ceria–zirconia supported palladium-alumina catalyst with high oxygen storage capacity and CO oxidation activity

The Ce_0.5Zr_0.3Al_0.2O_1.9/Pd-γ-Al₂O₃ catalyst prepared by a mechanochemical route and calcined at 1000 °C for 20 h in air atmosphere to evaluate the thermal stability. The prepared Ce_0.5Zr_0.3Al_0.2O_1.9/Pd-γ-Al₂O₃ catalyst was characterized for the oxygen storage capacity (OSC) and CO oxidation activity in automotive catalysis. For the characterization, X-ray diffraction, transmission electron microscopy and the Brunauer–Emmet–Teller (BET) technique were employed. The OSC values of all samples were measured at 600 °C using thermogravimetric-differential thermal analysis. Ce_0.5Zr_0.3Al_0.2O_1.9/Pd-γ-Al₂O₃ catalyst calcined at 1000 °C for 20 h with a BET surface area of 41 m² g⁻¹ exhibited the considerably high OSC of 583 μmol-O g⁻¹ and good OSC performance stability. The same synthesis route was employed for the preparation of the CeO₂/Pd-γ-Al₂O₃ and Ce_0.5Zr_0.5O₂/Pd-γ-Al₂O₃ for comparison.     

Effect of post-deposition annealing on phase formation and properties of RF magnetron sputtered PLZT thin films

In this work, we report the preparation of lanthanum-modified lead zirconate titanate (PLZT) thin films by RF magnetron sputtering on platinized silicon (Pt/Ti/SiO₂/Si) substrate. Sputtering was done in pure argon at 100 W RF power without external substrate heating. X-ray diffraction studies were performed on the films to study the effect of post-deposition furnace annealing temperature and time on the perovskite phase formation of PLZT. Annealing at 650 °C for 2 h was found to be optimum for the preparation of PLZT films in pure perovskite phase. The effect of different annealing conditions on surface morphology of the films was examined using AFM. The dielectric, ferroelectric and electrical properties of these films were also investigated in detail as a function of different annealing conditions. The pure perovskite film exhibits better properties than the other films which have some fraction of unwanted pyrochlore phase. The remanent polarization for pure perovskite film was found to be ∼29 μC/cm² which is almost double compared to the films having mixed phases. The dc resistivity of the pure perovskite film was found to be 7.7 × 10¹⁰ Ω cm at the electric field of ∼80 kV/cm.     

Microstructural, mechanical and electrochemical corrosion properties of sputtered titanium-aluminum-nitride films for bio-implants

The effect of aluminum (Al) addition to titanium nitride (TiN) matrix on the structural, mechanical and corrosion resistance properties of titanium-aluminum-nitride was studied. Ti_1−xAl_xN where x = 0, 0.5 and 1 films were coated onto substrates like Si wafer, AISI 316L stainless steel and low carbon steel by a direct current magnetron sputtering process. The layers were sputtered in pure Argon with a substrate temperature maintained at 400 °C, power of 250 W and a sputtering time of 120 min. XRD, TEM-SAED pattern and XPS analyses were made to study the structural properties of these films. Laser Raman spectrum showed the characteristic peaks at 249 and 659 cm⁻¹ for the Ti_0.5Al_0.5N film. AFM analysis showed a relatively smooth surface for the ternary film. Corrosion performance analysis indicated that the Ti_0.5Al_0.5N coated specimen had superior corrosion resistance when compared to TiN and AlN coated substrates. Higher values of nanohardness and lower coefficient of friction were observed for the Ti _0.5Al_0.5N specimen. Blood platelet adhesion experiments were made to examine the interaction between human blood and the materials in vitro.     

Synthesis and high-pressure sintering of (W0.5Al0.5)C

A new solid solution of Al in WC, which can be expressed by the chemical formula (W_0.5Al_0.5)C, has been synthesized directly by reaction milling (RM) of a W_0.5Al_0.5 alloy and the proper amount of carbon. The total reaction time is about 50 h. The ESEM photograph shows that the prepared (W_0.5Al_0.5)C powders are spherical, and the average particle size is about 40 nm. (W_0.5Al_0.5)C has been identified to crystallize in the hexagonal space group P-6m2 (No.187) and belongs to the WC structure type. The lattice parameter of (W_0.5Al_0.5)C is calculated to be a = 2.908(1) Å, c = 2.836(1) Å. This nanocrystalline powder can be well sintered at the high temperature (1600 °C) under the high pressure (4.5 GPa), and the relative density reaches 99.1%. The hardness of the sintered (W_0.5Al_0.5)C is tested to be 1500 ± 50 kg mm⁻², while the density is about 9.417 ± 0.003 g cm⁻³, which is far lower than that of WC.     

Dielectric and ferroelectric properties of Ba(Sn0.15Ti0.85)O3 thin films grown by a sol-gel process

Ferroelectric Ba(Sn_0.15Ti_0.85)O₃ (BTS) thin films were deposited on LaNiO₃-coated silicon substrates via a sol-gel process. Films showed a strong (1 0 0) preferred orientation depending upon annealing temperature and concentration of the precursor solution. The dependence of dielectric and ferroelectric properties on film orientation has been studied. The leakage current density of thin films at 100 kV/cm was 7 × 10⁻⁷ A/cm² and 5 × 10⁻⁵ A/cm² and their capacitor tunability was 54 and 25% at an applied field of 200 kV/cm (measurement frequency of 1 MHz) for the thin films deposited with 0.1 and 0.4 M spin-on solution, respectively. This work clearly reveals the highly promising potential of BTS compared with BST films for application in tunable microwave devices.     

Structural and optical characterizations of chemically deposited cadmium selenide thin films

Synthesis of cadmium selenide thin films by CBD method has been presented. The deposited film samples were subjected to XRD, SEM, UV-vis-NIR and TEP characterization. X-ray diffraction analysis showed that CdSe film sample crystallized in zinc blende or cubic phase structure. SEM studies reveal that the grains are spherical in shape and uniformly distributed all over the surface of the substrates. The optical band gap energy of as deposited film sample was found to be in the order of 1.8 eV. The electrical conductivity of the film sample was found to be 10⁻⁶ (Ω cm)⁻¹ with n-type of conduction mechanism.     

Room temperature ferromagnetic multilayer thin film based on indium oxide and iron oxide for transparent spintronic applications

Pulsed laser deposition technique is used for fabrication of multilayer thin film of indium oxide (In₂O₃) and iron oxide (Fe₃O₄). X-ray diffraction study shows that In₂O₃ film is highly oriented along (222) direction. The optical band gap of the multilayer is observed to be 3.65 eV. The film shows n-type behavior with resistivity, carrier concentration, and mobility of 5.59 × 10⁻⁴ Ω.cm, 2.33 × 10²⁰ cm⁻³, and 48 cm ²v⁻¹ s⁻¹ respectively. Magnetic measurement shows that the film is ferromagnetic at room temperature. Hysteresis measurements at 5 K after field cooling show a shift and broadening of the hysteresis loop, which is due to exchange bias coupling.     

Electrodeposition of As2Se3 thin films

Semiconducting As₂Se₃ thin films have been prepared from an aqueous bath at room temperature onto stainless steel and fluorine-doped tin oxide (F.T.O.)-coated glass substrates using an electrodeposition technique. It has been found that As₂O₃ and SeO₂ in the volumetric proportion as 4:6 and their equimolar solutions of 0.075 M concentration forms good quality films of As₂Se₃. The films are annealed in a nitrogen atmosphere at temperature of 200 °C for 2 h. The films are characterised by scanning electron microscopy, X-ray diffraction and optical absorption techniques. Studies reveal that asdeposited and annealed thin films are polycrystalline in nature. The optical band gap has been found to be 2.15 eV for the above-mentioned composition and concentration of the film.     

Effect of alumina doping on structural, electrical, and optical properties of sputtered ZnO thin films

A systematic study of the influence of alumina (Al₂O₃) doping on the optical, electrical, and structural characteristics of sputtered ZnO thin films is reported in this study. The ZnO thin films were prepared on 1737F Corning glass substrates by R.F. magnetron sputtering from a ZnO target mixed with Al₂O₃ of 0-4 wt.%. X-ray diffraction (XRD) analysis demonstrates that the ZnO thin films with Al₂O₃ of 0-4 wt.% have a highly (002) preferred orientation with only one intense diffraction peak with a full width at half maximum (FWHM) less than 0.5°. The electrical properties of the Al₂O₃-doped ZnO thin films appear to be strongly dependent on the Al₂O₃ concentration. The resistivity of the films decreases from 74 Ω·cm to 2.2 × 10^− 3 Ω·cm as the Al₂O₃ content increases from 0 to 4 wt.%. The optical transmittance of the Al₂O₃-doped ZnO thin films is studied as a function of wavelength in the range 200-800 nm. It exhibits high transparency in the visible-NIR wavelength region with some interference fringes and sharp ultraviolet absorption edges. The optical bandgap of the Al₂O₃-doped ZnO thin films show a short-wavelength shift with increasing of Al₂O₃ content.     

Properties of amorphous Si thin film anodes prepared by pulsed laser deposition

Amorphous Si (a-Si) thin film anodes were prepared by pulsed laser deposition (PLD) at room temperature. Structures and properties of the thin films were investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and electrochemical measurements. Galvanostatic charge/discharge tests of half cells using lithium counter electrode were conducted at a constant current density of 100 μA/cm² in different voltage windows. Cyclic voltammetry (CV) was obtained between 0 and 1.5 V at various scan rates from 0.1 to 2 mV/s. The apparent diffusion coefficient (D_Li) calculated from the CV measurements was about ∼10⁻¹³ cm²/s. The Si thin film anode was also successfully coupled with LiCoO₂ thin film cathode. The a-Si/LiCoO₂ full cell showed stable cycle performance between 1 and 4 V.     

Structural and mechanical properties of multi-element (AlCrMoTaTiZr)Nx coatings by reactive magnetron sputtering

(AlCrMoTaTiZr)N_x high-entropy films were deposited on silicon wafer and cemented carbide substrates from a single alloy target by reactive RF magnetron sputtering under a mixed atmosphere of Ar and N₂. The effect of nitrogen flow ratio R_N on chemical composition, morphology, microstructure, and mechanical properties of the (AlCrMoTaTiZr)N_x films was investigated. Nitrogen-free alloy film had an amorphous structure, while nitride films with at least 37 at.% N exhibited a simple NaCl-type FCC (face-centered cubic) structure. Mixed structures occurred in films with lower nitrogen contents. Films with the FCC structure were thermally stable without phase decomposition at 1000 °C after 10 h. The (AlCrMoTaTiZr)N film deposited at R_N = 40% exhibited the highest hardness of 40.2 GPa which attains the superhard grade. The main strengthening mechanisms for this film were grain-size and solid-solution strengthening. A residual compressive stress of 1.04 GPa was small to account for the observed hardness. The nitride film was wear resistant, with a wear rate of 2.8 × 10^− 6 mm³/N m against a loaded 100Cr6 steel ball in the sliding wear test. These high-entropy films have potential in hard coating applications.