Structural studies of Fe2O3-Bi2O3-CdO glass system

xFe₂O₃·(100 − x)[Bi₂O₃·CdO] system with 0 ≤ x ≤ 50 mol% was prepared and investigated by X-ray diffraction, density, FT-IR and Raman spectroscopies. The XRD patterns confirm the formation of a vitreous structure for x < 35 mol% Fe₂O₃. The evolution of density and molar volume with the addition and increasing of iron content indicates structural changes in the structure of Bi₂O₃·CdO glass matrix. The FT-IR spectrum of the glass matrix reveals a structure realized from BiO₃ pyramidal and BiO₆ octahedral units. With the addition of iron the structure proposed by the glass matrix is changing by the appearance of FeO₄ units. Also the existence of FeO₆ units cannot be excluded. The Raman spectra suggest a structure build from BiO₆ octahedral units. By Raman scattering the presence of structural units characteristic to Fe₂O₃ was not directly observed but the evolution of the spectra is dependent of the iron content.     

CO2 absorption and desorption of Bi2O3-La2O3 powders prepared by mechanical synthesis

In order to obtain CO₂-absorbents to eliminate CO₂ concentration locally, Bi₂O₃-La₂O₃ mixed powders were prepared by mechanical alloying (MA) method using a planetary ball-milling machine. CO₂-absorption and desorption properties were checked by TG-DTA for the obtained powder samples. As a result, the sample shown by (Bi₂O₃)_1−x(La₂O₃)_x [x≤0.50] was found to form α-Bi₂O₃-solid solution with repeated CO₂-adsorption and desorption around 400- 500 °C. Absorbed and desorbed CO₂ contents varied with MA time: the 72 h MA’ed sample had a larger CO₂ content than the 24 h MA’ed sample. The performance depended on the sample composition, and (Bi₂O₃)_0.70(La₂O₃)_0.30 was found to have the highest performance in the present system.     

Study on properties of BaxSmyTi7O20 ceramics with CaO-SiO2-B2O3 glass

The effect of CaO-SiO₂-B₂O₃ (CSB) glass addition on the sintering temperature and dielectric properties of Ba_xSm_yTi₇O₂₀ ceramics has been investigated using X-ray diffraction, scanning electron microscopy and differential thermal analysis. The CSB glass starts to melt at about 970 °C, and a small amount of CSB glass addition to Ba_xSm_yTi₇O₂₀ ceramics can greatly decrease the sintering temperature from about 1350 to about 1260 °C, which is attributed to the formation of liquid phase. It is found that the dielectric properties of Ba_xSm_yTi₇O₂₀ ceramics are dependent on the amount of CSB glass and the microstructures of sintered samples. The product with 5 wt% CSB glass sintered at 1260 °C is optimal in these samples based on the microstructure and the properties of sintering product, when the major phases of this material are BaSm₂Ti₄O₁₂ and BaTi₄O₉. The material possesses excellent dielectric properties: ?_r = 61, tan δ = 1.5 × 10⁻⁴ at 10 GHz, temperature coefficient of dielectric constant is −75 × 10⁻⁶ °C⁻¹.     

Dielectric and pyroelectric anisotropy in melt-quenched BaBi2(Nb1 − xVx)2O9 ceramics

The (0 0 l) textured BaBi₂(Nb_1 − xV_x)₂O₉ (where x = 0, 0.03, 0.07, 0.1 and 0.13) ceramics were fabricated via the conventional melt-quenching technique followed by high temperature heat-treatment (800-1000 °C range). The influence of vanadium content and sintering temperature on the texture development and relative density were investigated. The samples corresponding to the composition x = 0.1 sintered at 1000 °C for 10 h exhibited the maximum orientation of about 67%. The Scanning electron microscopic studies revealed the presence of platy grains having the a-b planes perpendicular the pressing axis. The dielectric constant and the pyroelectric co-efficient values in the direction perpendicular to the pressing axis were higher. The anisotropy in the dielectric constant is about 100 (at 100 kHz) at the dielectric maximum temperature and anisotropy in the pyroelectric co-efficient is about 50 μC cm⁻² °C⁻¹ in the vicinity of pyroelectric anomaly for the sample corresponding to the composition x = 0.1 sintered at 1000 °C. Higher values of the dielectric loss and electrical conductivity were observed in the direction perpendicular to the pressing axis which is attributed to the high oxygen ion conduction in the a-b planes.     

Synthesis and microwave dielectric properties of CaO-MgO-SiO2 submicron powders doped with Li2O-Bi2O3 by sol-gel method

Using Ca(NO₃)₂·4H₂O, Mg(NO₃)₂·6H₂O, Si(OC₂H₅)₄, LiNO₃ and Bi(NO₃)₃·5H₂O as raw materials, CaO-MgO-SiO₂ submicron powders were prepared at low temperature by sol-gel method. The crystallization temperature was decreased enormously by the introduction of Li-Bi liquid phase sintering aids into Ca-Mg-Si sol, and the powders with average particle sizes of 80-100 nm and 200-400 nm were obtained at the calcining temperature of 750 °C and 800 °C, respectively. The sintering characteristic and dielectric properties of powders calcined at 750 °C with different content of powders calcined at 800 °C were studied. When the content of powders calcined at 800 °C was 10 wt%, the dielectric ceramic sintered at 890 °C had compact structure, and possessed excellent microwave dielectric properties: ?_r = 7.16, Q × f = 25630 GHz, τ_f = −69.26 ppm/°C.     

Structural characterization of 0.5PbMg1/3Nb2/3O3-0.5BaxPb(1−x)TiO3 powders

The present work reports the effects caused by barium on phase formation, morphology and sintering of lead magnesium niobate-lead titanate (PMN-50PT). Ab initio study of 0.5Pb(Mg_1/3Nb_2/3)O₃-0.5(Ba_xPb_(1−x)TiO₃) ceramic powders, with x = 0, 0.20, and 0.40 was proposed, considering that the partial substitution of lead by barium can reestablish the equilibrium of monoclinic-tetragonal phases in the system. It was verified that even for 40 mol% of barium, it was possible to obtain pyrochlore-free PMN-PT powders. The increase of the lattice parameters of PMN-PT doped-powders confirmed dopant incorporation into the perovskite phase. The presence of barium improved the reactivity of the powders, with an average particle size of 120 nm for 40 mol% of barium against 167 nm for the pure sample. Although high barium content (40 mol%) was deleterious for a dense ceramic, contents up to 20 mol% allowed 95% density when sintered at 1100 °C for 4 h.     

Dielectric properties of a new ceramic system (1 − x)Mg4Nb2O9-xCaTiO3 at microwave frequency

The microstructures and the microwave dielectric properties of the (1 − x)Mg₄Nb₂O₉-xCaTiO₃ ceramic system were investigated. In order to achieve a temperature-stable material, CaTiO₃ (τ_f ∼ 800 ppm/°C) was chosen as a τ_f compensator and added to Mg₄Nb₂O₉ (τ_f ∼ −70 ppm/°C) to form a two phase system. It was confirmed by the XRD and EDX analysis. By appropriately adjusting the x-value in the (1 − x)Mg₄Nb₂O₉-xCaTiO₃ ceramic system, near-zero τ_f value can be achieved. A new microwave dielectric material, 0.5Mg₄Nb₂O₉-0.5CaTiO₃ applicable in microwave devices is suggested and possesses the dielectric properties of a dielectric constant ?_r ∼ 24.8, a Q × f value ∼82,000 GHz (measured at 9.1 GHz) and a τ_f value ∼−0.3 ppm/°C.     

Microstructure and microwave dielectric characteristics of (1 − x)Ba(Zn1/3Ta2/3)O3-xBaTi4O9 ceramics

(1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ (0.1 ≤ x ≤ 0.85) composites are prepared by mixing 1150 °C-calcined BaTi₄O₉ with 1150 °C-calcined Ba(Zn_1/3Ta_2/3)O₃ powders. The crystal structure, microwave dielectric properties and sinterabilites of the (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics have been investigated. X-ray diffraction patterns reveal that BaTi₄O₉, ordered and disordered Ba(Zn_1/3Ta_2/3)O₃ phases exist independently over the whole compositional range. The sintering temperatures of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics are about 1240 - 1320 °C and obviously lower than those of Ba(Zn_1/3Ta_2/3)O₃ ceramics. The dielectric constants (?_r) and the temperature coefficient of resonant frequency (τ_f) of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics increase with the increase of BaTi₄O₉ content. Nevertheless, the bulk densities and the quality values (Q × f) of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics increase with the increase of Ba(Zn_1/3Ta_2/3)O₃ content. The results are attributed to the higher density and quality value of Ba(Zn_1/3Ta_2/3)O₃ ceramics, the better grain growth, and the densification of sintered specimens added a small BaTi₄O₉ content. The (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramic with x = 0.1 sintered at 1320 °C exhibits a ?_r value of 31.5, a maximum Q × f value of 68500 GHz and a minimum τ_f value of 4.1 ppm/°C.     

Structure, dielectric and ferroelectric anisotropy of Sr2−xCaxBi4Ti5O18 ceramics

Sr_2−xCa_xBi₄Ti₅O₁₈(x = 0, 0.05) powders synthesized by solid state route were uniaxially pressed and sintered at 1225 °C for 2 h. The obtained dense ceramics exhibited crystallographic anisotropy with a dominant c axis parallel to the uniaxial pressing direction which was quantified in terms of the Lotgering factor. Microstructure anisotropy of both compositions (x = 0, 0.05) consisted of plate like grains exhibiting their larger surfaces mostly perpendicular to the uniaxial pressing direction. Dielectric and ferroelectric properties of Sr_2−xCa_xBi₄Ti₅O₁₈ ceramics were measured under an electric field (E) applied parallel and perpendicularly to uniaxial pressing direction. The obtained dielectric ?_R(T) and polarization (P-E) curves depended strongly on E direction thus denoting a significant effect from microstructure and crystallographic texture. Sr_2−xCa_xBi₄Ti₅O₁₈ properties were also significantly affected by Ca content (x): Curie temperature increased from 280 °C (x = 0) to 310 °C (x = 0.05) while ?_R and remnant polarization decreased for x = 0.05. The present results are discussed within the framework of the processing and crystal structure-properties relationships of Aurivillius oxides ceramics.     

Synthesis of solid solution Er2−xCexW3O12 and studies of their thermal expansion behavior

The syntheses and structures of Er_2−xCe_xW₃O₁₂ were studied. It was found that pure phases could form only for 0.0 ≦ x ≦ 0.4 and 1.5 ≦ x ≦ 2.0. Compounds with 0 ≦ x ≦ 0.4 have the hydrated orthorhombic structure at room temperature and transform to unhydrated orthorhombic one above 135 °C whereas samples with 1.5 ≦ x ≦ 2.0 crystallize in monoclinic structure. Thermal expansion properties of Er_2−xCe_xW₃O₁₂ were studied with high temperature X-ray powder diffraction. Samples with 0 ≦ x ≦ 0.4 exhibit negative thermal expansion in temperature range of 200-800 °C and higher cerium content leads to more negative thermal expansion coefficient. However, compounds with 1.5 ≦ x ≦ 2.0 show positive thermal expansion owing to the edge-sharing polyhedra.     

Materials with layered structures XIII: electrical and optical properties of layered chalcogenides in the system CoIn2S4-CoIn2Se4

The system CoIn₂S_4xSe_4(1−x) has been investigated by X-ray powder methods on samples quenched at 700 °C. The spinel type phase has a phase width of 1≥x>0.9. A new layered compound is formed for 0.9>x>0.45 which crystallizes with the α-FeGa₂S₄-type with a=392.6 pm and c=1270.3 pm (x=0.5) for the hexagonal cell. Platelike crystals of the layered phase are obtained by transport reactions with iodine in a temperature gradient 750→700 °C. The band gaps of these crystals measured by optical absorption vary from 1.2 to 1.4 eV. The electrical conductivities of the crystals are found in the order of 10⁻⁵ Ω⁻¹ cm⁻¹.     

Structure and thermal conductivity of Gd2(TixZr1 − x)2O7 ceramics

The Gd₂(Ti_xZr_1 − x)₂O₇ (x = 0, 0.25, 0.50, 0.75, 1.00) ceramics were synthesized by solid state reaction at 1650 °C for 10 h in air. The relative density and structure of Gd₂(Ti_xZr_1 − x)₂O₇ were analyzed by the Archimedes method and X-ray diffraction. The thermal diffusivity of Gd₂(Ti_xZr_1 − x)₂O₇ from room temperature to 1400 °C was measured by a laser-flash method. The Gd₂Zr₂O₇ has a defect fluorite-type structure; however, Gd₂(Ti_xZr_1 − x)₂O₇ (0.25 ≤ x ≤ 1.00) compositions exhibit an ordered pyrochlore-type structure. Gd₂Zr₂O₇ and Gd₂Ti₂O₇ are infinitely soluable. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ increases with increasing Ti content under identical temperature conditions. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ first decreases gradually with the increase of temperature below 1000 °C and then increases slightly above 1000 °C. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ is within the range of 1.33 to 2.86 W m^− 1 K^− 1 from room temperature to 1400 °C.     

Synthesis of (1 − x)Ca2/5Sm2/5TiO3-xLi1/2Nd1/2TiO3 ceramic powder via ethylenediaminetetraacetic acid precursor

(1 − x)Ca_2/5Sm_2/5TiO₃-xLi_1/2Nd_1/2TiO₃ (CSLNT) ceramic powder was prepared by a liquid mixing method using ethylenediaminetetraacetic acid (EDTA) as the chelating agent. TG, DTA, XRD and TEM characterized the precursors and derived oxide powders. When x = 0.3, perovskite CSLNT was synthesized at 1000 °C for 3 h in air. The CSLNT (x = 0.3) ceramics sintered at 1200 °C for 3 h show excellent microwave dielectric properties of ?_r = 99, Q_f = 6200 GHz and τ_f = 9 × 10⁻⁶ °C⁻¹.     

Dielectric properties of B2O3-doped (1 − x)LaAlO3-xSrTiO3 ceramic system at microwave frequency

The effects of B₂O₃ addition on the microwave dielectric properties and the microstructures of (1−x)LaAlO₃-xSrTiO₃ ceramics prepared by conventional solid-state routes have been investigated. Doping with 0.25 wt.% B₂O₃ can effectively promote the densification and the microwave dielectric properties of (1−x)LaAlO₃-xSrTiO₃ ceramics. It is found that LaAlO₃-SrTiO₃ ceramics can be sintered at 1400°C due to the liquid phase effect of a B₂O₃ addition observed by scanning electronic microscopy (SEM). The dielectric constant as well as the Q×f value decreases with increasing B₂O₃ content. At 1460°C, 0.46LaAlO₃-0.54SrTiO₃ ceramics with 0.25 wt.% B₂O₃ addition possesses a dielectric constant (ε_r) of 35, a Q×f value of 38,000 (at 7 GHz) and a temperature coefficients of resonant frequency (τ_f) of −1 ppm/°C.     

Effect of B2O3-Bi2O3-SiO2-ZnO glass on the sintering and microwave dielectric properties of 0.83ZnAl2O4-0.17TiO2

The 0.83ZnAl₂O₄-0.17TiO₂ (ZAT) ceramics were synthesized by solid state ceramic route. The effect of 27B₂O₃-35Bi₂O₃-6SiO₂-32ZnO (BBSZ) glass on the microwave dielectric properties of ZAT was investigated. The crystal structure and the microstructure of the ceramic-glass composites were studied by X-ray diffraction and scanning electron microscopic techniques. The low frequency dielectric loss was measured at 1 MHz. The dielectric properties of the sintered samples were measured in the microwave frequency range by the resonance method. Addition of 0.2 wt% of BBSZ improved the dielectric properties with quality factor (Q_u × f) > 120,000 GHz, temperature coefficient of resonant frequency (τ_f) = −7.3 ppm/°C and dielectric constant (?_r) = 11.7. Addition of 10 wt% of BBSZ lowered the sintering temperature to about 950 °C with Q_u × f > 10,000 GHz, ?_r = 10 and τ_f = −23 ppm/°C. The reactivity of 10 wt% BBSZ added ZAT with silver was also studied. The results show that ZAT doped with suitable amount of BBSZ glass is a possible material for low-temperature co-fired ceramic (LTCC) application.     

Soft chemistry synthesis and crystal structure of MgxCu3−xV2O6(OH)4·2H2O

Mg_xCu_3−xV₂O₆(OH)₄·2H₂O (x ∼ 1), with similar crystal structure as volborthite Cu₃V₂O₇(OH)₂·2H₂O, was successfully prepared by a soft chemistry technique. The method consists of mixing magnesium nitrate and copper nitrate with a boiling solution of vanadium oxide (obtained by reacting V₂O₅ with few mL of 30 vol.% H₂O₂ followed by addition of distilled water). When ammonium hydroxide NH₄OH 10% was added (pH 7.8), a green yellowish precipitate was obtained. Using X-ray powder diffraction data, its crystal structure has been determined by Rietveld refinement. Compared to volborthite, the vanadium coordination changes from tetrahedral VO₄ to trigonal bipyramidal VO₅, and magnesium replaces copper, preferably, in the less distorted octahedron. At 300 °C, the phase formed is similar to the high pressure (HP) monoclinic Cu₃V₂O₈ phase. However at higher temperature, 600 °C, the phase obtained is different from known Cu₃V₂O₈ phases.     

(5 − x)BaO-xMgO-2Nb2O5 ceramics prepared using a reaction-sintering process

(5 − x)BaO-xMgO-2Nb₂O₅ (x = 0.5 and 1; 5MBN and 10MBN) microwave ceramics prepared using a reaction-sintering process were investigated. Without any calcinations involved, the mixture of BaCO₃, MgO, and Nb₂O₅ was pressed and sintered directly. MBN ceramics were produced after 2-6 h of sintering at 1350-1500 °C. The formation of (BaMg)₅Nb₄O₁₅ was a major phase in producing 5MBN ceramics, and the formation of Ba(Mg_1/3Nb_2/3)O₃ was a major phase in producing 10MBN ceramics. As CuO (1 wt%) was added, the sintering temperature dropped by more than 150 °C. We produced 5MBN ceramics with these dielectric properties: ?_r = 36.69, Qf = 20,097 GHz, and τ_f = 61.1 ppm/°C, and 10MBN ceramics with these dielectric properties: ?_r = 39.2, Qf = 43,878 GHz, and τ_f = 37.6 ppm/°C. The reaction-sintering process is a simple and effective method for producing (5 − x)BaO-xMgO-2Nb₂O₅ ceramics for applications in microwave dielectric resonators.     

Research on the novel GeSe2-In2Se3-KBr chalcohalide optic glasses

(1 − x)(0.75GeSe₂-0.25In₂Se₃) − x(1/3In₂Se₃-2/3KBr) (x = 0, 0.15, 0.3, 0.45, 0.525) chalcohalide glasses were prepared by traditional melt-quenching method and its glass-forming region was determined. The physical, thermal and optical properties of the GeSe₂-In₂Se₃-KBr ternary glass system are reported. The results show that the GeSe₂-In₂Se₃-KBr glass system has relatively high glass transition temperature (T_g = 286-335 °C) and good thermal stability. With increasing KBr content from 0 to 35 mol%, a blue-shift from 750 to 620 nm at the visible absorbing cutting-off edge is observed. The red-shifting of the transmission cutting-off edge at the long-wave IR band occurs linearly with increasing KBr. The allowed direct transition and indirect transition of samples were calculated according to the classical Tauc equation. The direct optical band gaps and indirect optical band gaps were in the range from 1.649 to 1.931 eV and 1.513 to 1.863 eV, respectively.     

Photoluminescence investigation of rare-earth activated GdCa3(GaO)3(BO3)4 phosphors under UV excitation

A borate compound was adopted as a new host material of Eu³⁺ and Tb³⁺ activators to fabricate efficient luminescence materials. The phosphor compositions, Gd_1−xEu_xCa₃(GaO)₃(BO₃)₄ and Gd_1−xTb_xCa₃(GaO)₃(BO₃)₄, were synthesized by conventional solid-state reactions. The crystalline phases of the resulting powders were identified using an X-ray diffraction system. Their photoluminescence properties were investigated under long-wavelength UV excitation. The Eu³⁺-doped and Tb³⁺-doped GdCa₃(GaO)₃(BO₃)₄ phosphors efficiently emitted red and green light, respectively. The temperature dependency of emission intensity was measured in a range from room temperature to 150 °C. The emission intensities of the red and green phosphors at 150 °C are 87% and 91% of those at room temperature, respectively. In addition, the decay times of both the red and green phosphors are shorter than 3 ms.     

Effect of Pb(Fe1/2Nb1/2)O3 modification on dielectric and piezoelectric properties of Pb(Mg1/3Nb2/3)O3-PbZr0.52Ti0.48O3 ceramics

10 mol% Pb(Fe_1/2Nb_1/2)O₃ (PFN) modified Pb(Mg_1/3Nb_2/3)O₃-PbZr_0.52Ti_0.48O₃ (PMN-PZT) relaxor ferroelectric ceramics with compositions of (0.9 − x)PMN-0.1PFN-xPZT (x = 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 and 0.9) were prepared. X-ray diffraction investigations indicated that as-prepared ceramics were of pure perovskite phase and the sample with composition of x = 0.8 was close to morphotropic phase boundary (MPB) between rhombohedral and tetragonal phase. Dielectric properties of the as-prepared ceramics were measured, and the Curie temperature (T_c) increased sharply with increasing PZT content and could be higher than 300 °C around morphotropic phase boundary (MPB) area. At 1 kHz, the sample with composition of x = 0.1 had the largest room temperature dielectric constant ?_r = 3519 and maximum dielectric constant ?_m = 20,475 at T_m, while the sample with composition of x = 0.3 possessed the maximum dielectric relaxor factor of γ = 1.94. The largest d₃₃ = 318 pC/N could be obtained from as-prepared ceramics at x = 0.9. The maximum remnant polarization (P_r = 28.3 μC/cm²) was obtained from as-prepared ceramics at x = 0.4.