Structural, electrical and optical studies of SILAR deposited cadmium oxide thin films: Annealing effect

Successive ionic layer adsorption and reaction (SILAR) method has been successfully employed for the deposition of cadmium oxide (CdO) thin films. The films were annealed at 623 K for 2 h in an air and changes in the structural, electrical and optical properties were studied. From the X-ray diffraction patterns, it was found that after annealing, H₂O vapors from as-deposited Cd(O₂)_0.88(OH)_0.24 were removed and pure cubic cadmium oxide was obtained. The as-deposited film consists of nanocrystalline grains of average diameter about 20-30 nm with uniform coverage of the substrate surface, whereas for the annealed film randomly oriented morphology with slight increase in the crystallite size has been observed. The electrical resistivity showed the semiconducting nature with room temperature electrical resistivity decreased from 10⁻² to 10⁻³ Ω cm after annealing. The decrease in the band gap energy from 3.3 to 2.7 eV was observed after the annealing.     

Structural and optical characterizations of chemically deposited cadmium selenide thin films

Synthesis of cadmium selenide thin films by CBD method has been presented. The deposited film samples were subjected to XRD, SEM, UV-vis-NIR and TEP characterization. X-ray diffraction analysis showed that CdSe film sample crystallized in zinc blende or cubic phase structure. SEM studies reveal that the grains are spherical in shape and uniformly distributed all over the surface of the substrates. The optical band gap energy of as deposited film sample was found to be in the order of 1.8 eV. The electrical conductivity of the film sample was found to be 10⁻⁶ (Ω cm)⁻¹ with n-type of conduction mechanism.     

Mechanism of charge transport in ligand-capped crystalline CdTe nanoparticles according to surface photovoltaic and photoacoustic results

By combining surface photovoltaic and photoacoustic techniques, we probed the photogenerated charge transport channels of 3-mercaptopropionic acid (MPA)- and 2-mercaptoethylamine (MA)-capped crystalline CdTe nanoparticles on illumination with UV-near IR light. The results experimentally confirmed the presence of a CdS shell outside the CdTe core that formed through the self-assembly and decomposition of mercapto ligands during CdTe preparation. The data revealed that the CdS layer was partly responsible for the deexcitation behavior of the photogenerated carriers, which is related to the quantum tunnel effect. Experiments demonstrated that two quantum wells were located at wavelengths of 440 and 500 nm in buried interfacial space–charge regions, whereas the formation of a ligand layer obstructed charge transfer transitions of the core CdTe nanoparticles to a certain extent.     

Optical properties of nanocrystalline SnS2 thin films

Thin films of nanocrystalline SnS₂ on glass substrates were prepared from solution by dip coating and then sulfurized in H₂S (H₂S:Ar = 1:10) atmosphere. The films had an average thickness of 60 nm and were characterized by X-ray diffraction studies, scanning electron microscopy, EDAX, transmission electron microscopy, UV-vis spectroscopy, and Raman spectroscopy. The influence of annealing temperature (150-300 °C) on the crystallinity and particle size was studied. The effect of CTAB as a capping agent has been tested. X-ray diffraction analysis revealed the polycrystalline nature of the films with a preferential orientation along the c-axis. Optical transmission spectra indicated a marked blue shift of the absorption edge due to quantum confinement and optical band gap was found to vary from 3.5 to 3.0 eV with annealing temperature. Raman studies indicated a prominent broad peak at ∼314 cm⁻¹, which confirmed the presence of nanocrystalline SnS₂ phase.     

Ferroelectric and piezoelectric properties of bismuth titanate thin films grown on different bottom electrodes by soft chemical solution and microwave annealing

Bismuth titanate (Bi₄Ti₃O₁₂, BIT) films were evaluated for use as lead-free piezoelectric thin films in micro-electromechanical systems. The films were grown by the polymeric precursor method on LaNiO₃/SiO₂/Si (1 0 0) (LNO), RuO₂/SiO₂/Si (1 0 0) (RuO₂) and Pt/Ti/SiO₂/Si (1 0 0) (Pt) bottom electrodes in a microwave furnace at 700 °C for 10 min. The domain structure was investigated by piezoresponse force microscopy (PFM). Although the converse piezoelectric coefficient, d₃₃, regardless of bottom electrode is around (∼40 pm/V), those over RuO₂ and LNO exhibit better ferroelectric properties, higher remanent polarization (15 and 10 μC/cm²), lower drive voltages (2.6 and 1.3 V) and are fatigue-free. The experimental results demonstrated that the combination of the polymeric precursor method assisted with a microwave furnace is a promising technique to obtain films with good qualities for applications in ferroelectric and piezoelectric devices.     

Materials properties of electrodeposited SnS0.5Se0.5 films and characterization of photoelectrochemical solar cells

Thin films of tin sulfoselenide (SnS_0.5Se_0.5) have been electrodeposited from an aqueous solution on tin oxide coated glass substrates by potentiostatic technique. XRD pattern of SnS_0.5Se_0.5 films showed polycrystalline nature and orthorhombic structure. The presence of Sn, S, and Se of the films were confirmed by XPS analysis. All films showed an indirect band gap. Surface morphological studies were carried out using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) analyses. Mott-Schottky plots have been drawn (in the dark condition) to evaluate the semiconductor parameters which confirmed the p-type nature of the films. The photoelectrochemical behavior of the SnS_0.5Se_0.5 films was studied in the electrolyte containing 0.1 M (FeCl₂/FeCl₃) + 0.05 M H₂SO₄ and the results are reported.     

A study on the structural and mechanical properties of nanocrystalline CuS thin films grown by chemical bath deposition technique

We report a chemical route for the deposition of nanocrystalline thin films of CuS, using aqueous solutions of Cu(CH₃COO)₂, SC(NH₂)₂ and N(CH₂CH₂OH)₃ [triethanolamine, i.e. TEA] in proper concentrations and ratios. The films were structurally characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FESEM) and optical analysis [both photo luminescence (PL) and ultraviolet-visible (UV-vis)]. Optical studies showed a large blue shift in the band gap energy of the films due to quantum confinement effect exerted by the nanocrystals. From both XRD and FESEM analyses, formation of CuS nanocrystals with sizes within 10-15 nm was evident. A study on the mechanical properties was carried out using nanoindentation and nanoscratch techniques, which showed good mechanical stability and high adherence of the films with the bottom substrate. Such study on the mechanical properties of the CuS thin films is being reported here for the first time. Current-voltage (I-V) measurements were also carried out for the films, which showed p-type conductivity.     

Size effects of polycrystalline lanthanum modified Bi4Ti3O12 thin films

The film thickness dependence on the ferroelectric properties of lanthanum modified bismuth titanate Bi_3.25La_0.75Ti₃O₁₂ was investigated. Films with thicknesses ranging from 230 to 404 nm were grown on platinum-coated silicon substrates by the polymeric precursor method. The internal strain is strongly influenced by the film thickness. The morphology of the film changes as the number of layers increases indicating a thickness dependent grain size. The leakage current, remanent polarization and drive voltage were also affected by the film thickness.     

Preparation of grape-like Bi2O3/Ti photoanode and its visible light activity

Compact and grape-like bismuth oxide (Bi₂O₃) coated titania (Ti) anode was prepared by oxalic acid (H₂C₂O₄) etching, electrodeposition and calcination in order to explore its photoelectrocatalytic activities. The Bi₂O₃ coating was demonstrated to be full of pores, and a good combination between Bi₂O₃ layer and honeycomb-like Ti substrate was observed by scanning electron microscopy. The characteristic morphology of Bi₂O₃ coating indicated that the electrode is stable during degradation. The Bi₂O₃/Ti electrode was used in oxidative degradation of Acid Orange 7 by electrolysis, photocatalytic oxidation and photoelectrocatalytic oxidation processes. The pseudo-first order kinetics parameter (K_app) of photoelectrocatalytic process was 1.15 times of the sum of electrolysis and photocatalytic oxidation under visible light irradiation at 420 nm. The results indicated that the synergy of electrolysis and photocatalysis lead to an excellent photoelectrocatalytic property of the Bi₂O₃/Ti electrode.     

The effect of strain on nonlinear temperature dependence of resistivity in SrMoO3 and SrMoO3−xNx films

Highly oriented SrMoO₃ thin films have been fabricated by pulsed laser deposition of SrMoO₄ in hydrogen. The films are found to grow along the (1 0 0) direction on LaAlO₃ (1 0 0) and SrTiO₃ (1 0 0) substrates. The method has been extended for the fabrication of oxynitride thin films, using ammonia as the reducing medium. The resistivity measurements show nonlinear temperature dependent (Tⁿ) behaviour in the temperature interval of 10-300 K. The conduction mechanism is largely affected by the strain due to the substrate lattice. A combination of T and T² dependence of resistivity on temperature is observed for films having lesser lattice mismatch with the substrate. The X-ray photoelectron spectroscopic studies confirm the formation of SrMoO₃ and SrMoO_3−xN_x films.     

A rational elemental-directed alcohol-thermal route to CdSe nanostructures for thin film solar cells

We have reported an alcohol-thermal method to in-situ synthesis of Cadmium Selenide (CdSe) nanocrystals/thin films on Cd/indium-doped tin oxide (ITO) substrates through a direct reaction of Se and Cd. In the synthetic system, ligands and surfactants are not introduced, and concentration of reaction precursors is not high, thus not only it is a very economic and environmental-friendly route, but also the CdSe film without any impurities is obtained. The Cd deposited on ITO substrates by magnetron sputtering acted as dual roles: reactant source and hard template for the final product. The microstructure is analyzed by field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). Poly(3-hexylthiophene) (P3HT) is deposited on CdSe film to fabricate a hybrid thin film solar cell device with ITO/CdSe/P3HT/Al structure to demonstrate solar light to electrical energy conversion.     

Effect of annealing atmosphere on phase formation and electrical characteristics of bismuth ferrite thin films

Bismuth ferrite thin films were deposited on Pt/Ti/SiO₂/Si substrates by a soft chemical method and spin-coating technique. The effect of annealing atmosphere (air, N₂ and O₂) on the structure and electrical properties of the films are reported. X-ray diffraction analysis reveals that the film annealed in air atmosphere is a single-phase perovskite structure. The films annealed in air showed better crystallinity and the presence of a single BFO phase leading to lower leakage current density and superior ferroelectric hysteresis loops at room temperature. In this way, we reveal that BFO film crystallized in air atmosphere by the soft chemical method can be useful for practical applications, including nonvolatile digital memories, spintronics and data-storage media.     

Substrate temperature effects on the growth and properties of γ-MnS thin films grown by rf sputtering

The growth of manganese(II) sulfide films by radiofrequency sputtering are shown for the first time. Polycrystalline, nearly stoichiometric films of the metastable hexagonal γ-MnS phase were obtained when the substrate temperature was approximately 26°C. For higher substrate temperatures, 120 and 180°C, the films were amorphous and sulfur deficient. The sulfur loss is substrate-temperature dependant. This behavior is discussed in terms of the dissociation of the MnS molecules during the sputtering process and the phase diagram of sulfur. An analysis of the optical transmission spectrum of the γ-MnS films allowed us to estimate their index of refraction in the non-absorbing region of the spectrum and the electronic band gap in the high absorbance region, obtaining an E_g value of 3.47±0.01 eV at room temperature.     

In situ fabrication of amino acid-polyoxometalate nanoparticle functionalized ultrathin films and relevant electrochemical property study

In this paper, amino acid-polyoxometalate (polyoxometalate = H₃PMo₁₂O₄₀, H₄SiW₁₂O₄₀, and H₃PW₁₂O₄₀) nanoparticles functionalized ultrathin polyelectrolyte films were successfully fabricated via Layer-by-Layer (LbL) assembly technique. UV-vis absorption spectrometry was used to investigate the incorporation and reproducible growth process of the amino acid-polyoxometalate nanoparticles in the films. Fourier transform infrared spectroscopy was used to measure the composition of the ultrathin polyelectrolyte films. Transmission electron microscopy was employed to study the morphology and size of the nanoparticles in the films. Electrochemical study of the films shows that the excellent electrochemical property of the polyoxometalate remained.     

Characterization of electrochemically deposited Cu-Ni black coatings

Electrochemically deposited Cu-Ni black coatings on molybdenum substrate from ethylenediaminetetraacetic acid (EDTA) bath solution are shown to exhibit good optical properties (α=0.94, ε = 0.09). The deposit is characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Cu is present in metallic and +2 oxidation states in the as-prepared Cu-Ni black coating, whereas Ni²⁺ as well as Ni³⁺ species are observed in the same coating. Cu and Ni are observed in their metallic state after 10 and 20 min sputtering. X-ray initiated Auger electron spectroscopy (XAES) of Cu and Ni also agrees well with XPS investigations.     

Improved efficiency of the chemical bath deposition method during growth of ZnO thin films

Chemical bath deposition (CBD) is an inexpensive and low temperature method (25-90 °C) that allows to deposit large area semiconductor thin films. However, the extent of the desired heterogeneous reaction upon the substrate surface is limited first by the competing homogeneous reaction, which is responsible for colloidal particles formation in the bulk solution, and second, by the material deposition on the CBD reactor walls. Therefore, the CBD method exhibits low efficiency in terms of profiting the whole amount of starting materials. The present work describes a procedure to deposit ZnO thin films by CBD in an efficient way, since it offers the possibility to minimize both the undesirable homogeneous reaction in the bulk solution and the material deposition on the CBD reactor walls. In a first stage, zinc peroxide (ZnO₂) crystallizing with cubic structure is obtained. This compound shows a good average transparency (90%) and an optical bandgap of 4.2 eV. After an annealing process, the ZnO₂ suffers a transformation toward polycrystalline ZnO with hexagonal structure and 3.25 eV of optical bandgap. The surface morphology of the films, analyzed by atomic force microscope (AFM), reveals three-dimensional growth features as well as no colloidal particles upon the surface, therefore indicating the predominance of the heterogeneous reaction during the growth.     

Thickness dependent transport and magnetotransport in CSD grown La0.7Pb0.3MnO3 manganite films

We report the effect of film thickness on transport and magnetotransport in La_0.7Pb_0.3MnO₃ (LPMO) manganite films grown on single crystalline LaAlO₃ substrate using chemical solution deposition (CSD) technique. AFM measurements show the island type grain growth responsible for the strain at the film-substrate interface, while structural studies using XRD shows the presence of thickness dependent compressive strain in the films which modifies the transport and magnetotransport in LPMO/LAO films. The observation of low temperature resistivity minima behavior in all the LPMO films has been explained in the context of electron-electron scattering mechanism. The ZFC-FC magnetization measurements show the glassy state behavior below T_min.     

Novel silicon carbide/polypyrrole composites; preparation and physicochemical properties

Novel silicon carbide/polypyrrole (SiC/PPy) conducting composites were prepared using silicon carbide as inorganic substrate. The surface modification of SiC was performed in aqueous solution by oxidative polymerization of pyrrole using ferric chloride as oxidant. Elemental analysis was used to determine the mass loading of polypyrrole in the SiC/PPy composites. Scanning electron microscopy showed the surface modification of SiC by PPy. PPy in composites was confirmed by the presence of PPy bands in the infrared spectra of SiC/PPy containing various amounts of conducting polymer. The conductivity of SiC/PPy composites depends on PPy content on the surface. The composite containing 35 wt.% PPy showed conductivity about 2 S cm⁻¹, which is in the same range as the conductivity of pure polypyrrole powder prepared under the same conditions using the same oxidant. PPy in the composites was clearly detected by X-ray photoelectron spectroscopy (XPS) measurements by its N1s and Cl2p peaks. High resolution scans of the C1s regions distinguished between silicon carbide and polypyrrole carbons. The fraction of polypyrrole at the composite surface was estimated from the silicon and nitrogen levels. The combination of XPS and conductivity measurements suggests that the surface of the SiC/PPy composites is polypyrrole-rich for a conducting polymer mass loading of at least 12.6 wt.%.     

Fluorographene/polyimide composite films: Mechanical,electrical, hydrophobic,thermal and low dielectric properties

Nowadays, dielectric materials with excellent mechanical and hydrophobic properties are desired for use in the integrated circuits (ICs). For this reason, low dielectric constant fluorographene/polyimide (FG/PI) composite films were prepared by a facile solution blending method, suggesting that the mechanical, electrical, hydrophobic and thermal properties were significantly enhanced in the presence of FG. With addition of 1 wt% FG, the tensile strength, Young’s modulus and elongation at break were dramatically increased by 139%, 33% and 18% respectively when compared with pure PI film. Furthermore, composite films exhibit superior hydrophobic and thermal stability performance. Especially, the FG/PI film with 0.5 wt% of FG possessing a low dielectric constant of 2.48 and a good electrical insulativity that is lower than 10⁻¹⁴ S m⁻¹. Therefore, by their excellent performance, FG/PI hybrid films represent suitable candidate solutions with applications in the microelectronics and aerospace industries.