Structural, magnetic and dielectric properties of Bi1−ySryFe(1−y)(1−x)Sc(1−y)xTiyO3 (x = 0-0.2, y = 0.1-0.3) ceramics

In this study, bulk ceramics with general formula Bi_1−ySr_yFe_{(1−y)(1−x)}Sc_(1−y)xTi_yO₃ (x = 0-0.2, y = 0.1-0.3 mol%) were prepared by traditional solid-state reaction method. As a comparison, bulk BiFeO₃ (BF) was also sintered by rapid sintering method. Their structural, magnetic, dielectric properties were investigated. X-ray diffraction analysis indicated that apart from a small amount of secondary phase detected in BF, all other samples crystallized in pure perovskite structure and maintained original R3c space group. The room temperature M-H curves were obtained. While BF had a coercive magnetic field (H_c) of 150 Oe, Bi_1−ySr_yFe_1−yTi_yO₃ solid solutions had a much larger value (for y = 0.1, 0.2, 0.3, H_c were 4537, 5230 and 3578 Oe, respectively). Sc³⁺ substitution decreased the H_c values of these solid solutions remarkably, and resulted in soft magnetic properties, as well as a decrease of the dielectric loss. At 1 MHz, the tan δ of Bi_0.7Sr_0.3Fe_0.7(1−x)Sc_0.7xTi_0.3O₃ with x = 0.05, 0.1, 0.15, 0.2 were 0.1545, 0.1078, 0.1046 and 0.1701, respectively.     

Structural and electrical properties of La2−xBaxMo2O9−x/2 (x = 0-0.18)

La_2−xBa_xMo₂O_9−x/2 (x ≤ 0.18) have been prepared by solid state reaction method. The lattice parameter of La_2−xBa_xMo₂O_9−x/2 (x ≤ 0.18) determined by XRD data refinement shows a linear dependence on the dopant Ba content x. For the specimen with a La/Ba molar ratio of 0.18-0.2, additional reflection of secondary phase exists in the XRD pattern, so the value of solubility limit for Ba in La₂Mo₂O₉ is defined in range of 0.18 < x < 0.2. As the replacement degree of La³⁺ by Ba²⁺ increases, the bulk conductivity of La_2−xBa_xMo₂O_9−x/2 (x ≤ 0.18) decreases initially and then increases, a minimum value at La_1.9Ba_0.1Mo₂O_8.95 exists. Hebb-Wagner studies in argon atmosphere, which use an oxide-ion blocking electrode, show that La_2−xBa_xMo₂O_9−x/2 (x ≤ 0.18) are predominantly oxide-ion conducting in the temperature ranging from 773 to 1173 K. The average thermal expansion coefficient of La_1.84Ba_0.16Mo₂O_8.92 determined by high-temperature XRD was deduced as great as 17.5 × 10⁻⁶ K⁻¹ between 298 and 1173 K.     

Eu-Mössbauer spectroscopic and X-ray diffraction study on EuyM1−yO2−x (0 ≤ y ≤ 1.0) (M = Th, U)

¹⁵¹Eu-Mössbauer spectroscopic and powder X-ray diffraction (XRD) study has been performed for the Eu_yM_1−yO_2−x (M = Th and U) systems over the entire composition range of 0 ≤ y ≤ 1.0. The XRD results of the Eu-Th system showed that a very wide defect-fluorite (DF) type phase in which oxygen vacancies (V_O) are disordered (x = y/2) is formed for 0 ≤ y < 0.5 and that two-phase regions sandwitching a narrow C-type (C) single phase around y ≈ 0.8 appear for 0.5 < y < 0.8 (DF + C) and 0.82 < y < 1.0 (C + B-type (monoclinic) Eu₂O₃). The Mössbauer results show that the isomer shifts (ISs) of Eu³⁺ in this system smoothly increase with Eu composition, y. The decrease of average coordination number (CN) of O²⁻ around Eu³⁺ with increasing y (CN = 8 − 2y) (x = y/2) results in the decrease of the average EuO bond length, which is due to the decrease of repulsion force between O²⁻ anions. This result confirms that the IS of Eu³⁺ correlates well with the average EuO bond length in oxide systems. For the Eu-U system, the lattice parameter, a₀, of the system decreases almost linearly with y, in accordance with the calculated a₀ versus y curve for the oxygen-stoichiometric (i.e. x = 0) fluorite-type dioxide (CN = 8). The ISs of Eu³⁺ in this composition range remain almost constant around 0.5 mm/s, which is comparable to those of pyrochlore oxides (Eu₂Zr₂O₇ and Eu₂Hf₂O₇ (y = 0.5)) with O²⁻-eight-fold coordinated Eu³⁺(CN = 8).     

Oxygen vacancy ordering in strontium doped rare earth cobaltate perovskites Ln1−xSrxCoO3−δ (Ln = La, Pr and Nd; x > 0.60)

A family of Sr-doped perovskite compounds Ln_1−xSr_xCoO_3−δ (Ln = La³⁺, Pr³⁺ and Nd³⁺; x > 0.60), were prepared by sol-gel chemistry and reaction at 1100 °C under 1 atm of oxygen. This structural family has been shown to be present only for rare earth ions larger than Sm³⁺ and an upper limit of Sr²⁺ solubility in these phases was found to exist between x = 0.90 and 0.95. X-ray diffraction shows oxygen-deficient, simple cubic (Pm-3m) perovskite crystal structures. The combination of electron and powder neutron diffraction reveals that oxygen vacancy ordering occurs, leading to a tetragonal (P4/mmm) superstructure and a doubling of the basic perovskite unit along the crystallographic c-axis. No additional Ln³⁺/Sr²⁺ cation ordering was observed.     

Pechini sol-gel deposition and luminescent properties of SrLa1−xRExGa3O7 (RE = Eu, Tb) phosphor films

SrLa_1−xRE_xGa₃O₇ (RE = Eu³⁺, Tb³⁺) phosphor films were deposited on quartz glass substrates by a simple Pechini sol-gel method. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy, field-emission scanning electron microscopy, photoluminescence spectra, and lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 700 °C and crystallized fully at 900 °C. The results of FT-IR spectra were in agreement with those of XRD. Uniform and crack-free films annealed at 900 °C were obtained with average grain size of 80 nm, root mean square roughness of 46 nm and thickness of 130 nm. The RE ions showed their characteristic emission in crystalline SrLa_1−xRE_xGa₃O₇ films, i.e., Eu³⁺⁵D₀-⁷F_J (J = 0, 1, 2, 3, 4), Tb³⁺⁵D₄-⁷F_J (J = 6, 5, 4, 3) emissions, respectively. The optimum concentrations (x) of Eu³⁺ and Tb³⁺ were determined to be 50, and 80 mol% in SrLa_1−xRE_xGa₃O₇ films, respectively.     

Luminescence characterization of (Ca1−xSrx)(S1−ySey):Eu,M (M = Sc and Y) for high color rendering white LED

The highly efficient red phosphors (Ca_1−xSr_x)(S_1−ySe_y):Eu²⁺,M³⁺ (M = Sc and Y) were prepared, starting from CaCO₃, SrCO₃, Eu₂O₃, Sc₂O₃, Y₂O₃, S, and SeO₂ with a flux, by a conventional solid-state reaction. The optimized red phosphors converted 11.8% (Sc³⁺) and 11.7% (Y³⁺) of the absorbed blue light into luminescence. These quantum values are much higher than Q = 3.0% of CaS:Eu²⁺. For the fabrication of light-emitting diodes (LEDs), the prepared phosphors were coated with MgO from non-aqueous solution to overcome their weakness against moisture. White LEDs were fabricated by pasting the prepared red phosphors and the yellow YAG:Ce³⁺ phosphor on an InGaN blue chip (λ_ems = 446.5 nm). The incorporation of the red phosphor to the YAG:Ce³⁺ phosphor resulted in an improved color rendering index (Ra) from 70 to 80.     

One-step synthesis and double emission (Ca1 + x − yEuy)Ga2S4 + x phosphor for white LEDs

(Ca_{1 + x − y}Eu_y)Ga₂S_4 + x phosphors have been synthesized one step by solid state reaction. The photoluminescence excitation and emission spectra of phosphors have been studied; the influence of host composition and Eu²⁺ concentration on emission spectra has also been investigated. The emission spectrum consists of yellow emission at 550 nm and red emission at 650 nm. It also indicates that the excitation spectrum is a broadband and can be well matched with the emission of GaN chip. Combined these phosphors with 460 nm-emitting GaN chips, White LEDs have been fabricated. Their electroluminescence spectra have been measured under 20 mA forward-bias current. Their CIE chromaticity coordinates and color temperature indicate that (Ca_{1 + x − y}Eu_y)Ga₂S_4 + x phosphors are promising phosphors for GaN-based white LEDs.     

Synthesis and electrical properties of ordered perovskite oxide Cd3−x−yCuxAyTeO6 (A = Li, Na; 0.00 ≤ x, y ≤ 0.15)

Polycrystalline Cd_3−x−yCu_xA_yTeO₆ (A = Li, Na) samples were prepared by solid-state reaction, and their crystal structure and electrical properties were investigated. In Cd_3−xCu_xTeO₆ and Cd_3−yA_yTeO₆ (A = Li, Na), the maxim solubility of x and y was 0.15 and 0.15 for A = Li, 0.05 for A = Na, respectively. For co-substituted samples Cd_2.9−yCu_0.1Li_yTeO₆ and Cd_2.9−yCu_0.1Na_yTeO₆, the maxim solubility of x was the same as single substitution above-mentioned. The alkali-metal substituted samples Cd_3−yA_yTeO₆ (A = Li, Na) showed a negative Seebeck coefficient, which indicates that the major conduction carriers are electron. On the other hand, the co-substituted samples Cd_2.9−yCu_0.1A_yTeO₆ (A = Li, Na) represented a positive Seebeck coefficient, and major conduction carriers were hole through substitution by copper ions.     

Synthesis and electrochemical properties of Ti doped Li3 − xFe2 − xTix(PO4)3/C cathode materials

Li_3 − xFe_2 − xTi_x(PO₄)₃/C (x = 0-0.4) cathodes designed with Fe doped by Ti was studied. Both Li₃Fe₂(PO₄)₃/C (x = 0) and Li_2.8Fe_1.8Ti_0.2(PO₄)₃/C (x = 0.2) possess two plateau potentials of Fe³⁺/Fe²⁺ couple (around 2.8 V and 2.7 V vs. Li⁺/Li) upon discharge observed from galvanostatic charge/discharge and cyclic voltammetry. Li_2.8Fe_1.8Ti_0.2(PO₄)₃/C has higher reversibility and better capacity retention than that of the undoped Li₃Fe₂(PO₄)₃/C. A much higher specific capacity of 122.3 mAh/g was obtained at C/20 in the first cycle, approaching the theoretical capacity of 128 mAh/g, and a capacity of 100.1 mAh/g was held at C/2 after the 20th cycle.     

Dependence of optical properties on the composition of (Ba1−x−ySrxEuy)Si2O2N2 phosphors for white light emitting diodes

BaSi₂O₂N₂: Eu²⁺ is an efficient phosphor because of its high quantum yield and quenching temperature. Partial substitution of Ba²⁺ by Sr²⁺ is the most promising approach to tune the color of phosphors. In this study, a series of (Ba_1−x−ySr_xEu_y)Si₂O₂N₂ (x = 0.0–0.97, y = 0.00–0.10) phosphors are synthesized via high-temperature solid-state reactions. Intense green to yellow phosphors can be obtained by the partial substitution of the host lattice cation Ba²⁺ by either Sr²⁺ or Eu²⁺. The luminescent properties and the relationships among the lowest 5d absorption bands, Stokes shifts, centroid shifts, and the splitting of Eu²⁺ are studied systematically. Then, based on (Ba_1−x−ySr_xEu_y)Si₂O₂N₂ phosphors and near-ultraviolet (∼395 nm)/blue (460 nm) InGaN chips, intense green–yellow light emitting diodes (LEDs) and white LEDs are fabricated. (Ba_0.37Sr_0.60)Si₂O₂N₂: 0.03Eu²⁺ phosphors present the highest efficiency, and the luminous efficiency of white LEDs can reach 17 lm/w. These results indicate that (Ba_1−x−ySr_xEu_y)Si₂O₂N₂ phosphors are promising candidates for solid-state lighting.     

Synthesis of perovskite-type (La1−xCax)FeO3 (0 ≤ x ≤ 0.2) at low temperature

Gel formation was realized by adding citric acid to a solution of La(NO₃)₃·5H₂O, Ca(NO₃)₂·4H₂O, and Fe(NO₃)₂·9H₂O. Perovskite-type (La_1−xCa_x)FeO₃ (0 ≤ x ≤ 0.2) was synthesized by firing the gel at 500 °C in air for 1 h. The crystallite size (D_1 2 1) decreased with increasing x, while the specific surface area was 6.8-9.4 m²/g and independent of x. The XPS measurement of the (La_1−xCa_x)FeO₃ surface indicated that the Ca²⁺ ion content increased with increasing x, while the Fe ion content was independent of x. Catalytic activity for CO oxidation increased with increasing x.     

Negative thermal expansion and electrical properties of Mn3(Cu0.6NbxGe0.4 − x)N (x = 0.05-0.25) compounds

Bulk materials with the general formula of Mn₃(Cu_0.6Nb_xGe_0.4 − x)N (x = 0.05, 0.1, 0.15, 0.2, 0.25), Mn₃(Cu_0.6Ge_0.4)N and Mn₃(Cu_0.7Ge_0.3)N were fabricated by mechanical ball milling and solid state sintering. Their thermal expansion coefficients and electrical conductivities were investigated in the temperature range of 80-300 K. It is found that the temperature interval of negative temperature expansion behavior is about 95 K in the samples of Mn₃(Cu_0.6Nb_0.15Ge_0.25)N and Mn₃(Cu_0.6 Nb_0.2Ge_0.2)N, which is twice as large as that of Mn₃(Cu_0.7Ge_0.3)N. The negative thermal expansion of Mn₃(Cu_0.6Nb_0.15Ge_0.25)N can reach to − 19.5 × 10⁻⁶ K^− 1 in the temperature range of 165 to 210 K. The electrical conductivity of this series materials is in a level of about 2.5 × 10⁶ (Ω m)^− 1.     

Order-disorder phase transitions and high-temperature oxide ion conductivity of Er2+xTi2−xO7−δ (x = 0, 0.096)

The Er_2+xTi_2−xO_7−δ (x = 0.096; 35.5 mol% Er₂O₃) solid solution and the stoichiometric pyrochlore-structured compound Er₂Ti₂O₇ (x = 0; 33.3 mol% Er₂O₃) are characterized by X-ray diffraction (phase analysis and Rietveld method), thermal analysis and optical spectroscopy. Both oxides were synthesized by thermal sintering of co-precipitated powders. The synthesis study was performed in the temperature range 650-1690 °C. The amorphous phase exists below 700 °C. The crystallization of the ordered pyrochlore phase (P) in the range 800-1000 °C is accompanied by oxygen release. The ordered pyrochlore phase (P) exists in the range 1000−1200 °C. Heat-treatment at T ≥ 1600 °C leads to the formation of an oxide ion-conducting phase with a distorted pyrochlore structure (P2) and an ionic conductivity of about 10⁻³ S/cm at 740 °C. Complex impedance spectra are used to separately assess the bulk and grain-boundary conductivity of the samples. At 700 °C and oxygen pressures above 10⁻¹⁰ Pa, the Er_2+xTi_2−xO_7−δ (x = 0, 0.096) samples are purely ionic conductors.     

Structural and dielectric properties of ferroelectric Sr1−xBaxBi2(Nb0.5Ta0.5)2O9 and Sr0.5Ba0.5Bi2(Nb1−yTay)2O9 ceramics

Ferroelectric Sr_1−xBa_xBi₂(Nb_0.5Ta_0.5)₂O₉ and Sr_0.5Ba_0.5Bi₂(Nb_1−yTa_y)₂O₉ were synthesized by solid state reaction route. X-ray diffraction studies confirm the formation of single phase layered perovskite solid solutions over a wide range of compositions (x=y=0.0, 0.25, 0.50, 0.75 and 1). The lattice parameters and the Curie temperature (T_c) have been found to have linear dependence on x and y. Transmission electron microscopy (TEM) suggest the lowering of orthorhombic distortion with increasing Ba²⁺ substitution. Variations in microstructural features as a function of x and y were monitored by scanning electron microscopy (SEM). The dielectric constant at room temperature increases with increase in both x and y. Interestingly Ba²⁺ substitution on Sr²⁺ site induces diffused phase transition and diffuseness increases with increasing Ba²⁺ concentration.     

Electron paramagnetic resonance (EPR) of antiferromagnetic nanoparticles of La1−xSrxCrO3 (0.000 ≤ x ≤ 0.020) synthesized by combustion reaction

Nanocrystalline particles of La_1−xSr_xCrO₃ (0.000 ≤ x ≤ 0.020) compounds were synthesized in order to investigate the antiferromagnetic (AFM) to paramagnetic (PM) phase transition temperature, g-factor, line width and intensity by electron paramagnetic resonance (EPR). All samples were synthesized by combustion reaction method using strontium nitrate, lanthanum nitrate, chromium nitrate and urea as fuel without subsequent heat treatment. X-ray diffraction patterns of all systems showed broad peaks consistent with orthorhombic structure of LaCrO₃. The absence of extra reflections in the diffraction patterns of as-prepared materials ensures the phase purity. The average crystallite sizes determined from the prominent (1 1 2) peak of the diffraction using Scherrer's equation was independent of the addition of Sr²⁺ ions; being ca. 31–29 nm for x = 0.000 and 0.020, respectively. The EPR line width and intensity were found to be dependent on Sr²⁺ addition and temperature. However, the AFM–PM transition temperature was found to be independent of strontium concentration, being ca. 296 K. In the PM phase, g-factor was nearly temperature independent with increasing of x. The EPR results indicated that the addition of Sr²⁺ ions may induce creation of Cr³⁺–Cr⁴⁺ clusters.     

Structural and microwave dielectric behavior of (Li1/4Nb3/4) substituted ZrxSnyTizO4 (x + y + z = 2) system

The phase structure, microwave dielectric properties, and their stability with different annealing conditions have been investigated in (Li_1/4Nb_3/4) substituted Zr_xSn_yTi_zO₄ system. The sintering temperature of Zr_xSn_yTi_zO₄ ceramic was lowered from 1500 to 1140 °C by (Li_1/4Nb_3/4) substitution. Both X-ray diffraction (XRD) analysis and electron diffraction (ED) analysis revealed that the (Li_1/4Nb_3/4) substituted Zr_xSn_yTi_zO₄ ceramic crystallized as the high-temperature disordered ZrTiO₄ phase. As the content of Sn increased from 0.10 to 0.30, the permittivity of the (Zr_1−xSn_x)(Li_1/4Nb_3/4)_0.4Ti_0.6O₄ ceramic decreased gradually from 35.5 to 31.5, the Q_f value increased from 37,800 to 58,300 GHz, and TCF value shifted slightly from −4.5 to −33.0 ppm °C⁻¹. Both the phase structure and microwave dielectric properties of (Zr_1−xSn_x)(Li_1/4Nb_3/4)_0.4Ti_0.6O₄ ceramics were stable with annealing conditions.     

Preparation and characterization of La-doped Ba(1 − x)SrxTiO3 powders and thin films

Ba_(1 − x)Sr_xTiO₃ powders with different Ba/Sr ratios (x = 0.10, 0.25, 0.40, 0.55, 0.70) and La-doped Ba_0.9Sr_0.1TiO₃·yLa powders (y = 0.002, 0.004, 0.006, 0.008, 0.010) have been prepared by sol-gel technology using dehydrated barium-acetate, strontium-carbonate, lanthanum-nitrate, and titanium-isopropoxide as raw materials. The experimental results show that the dielectric properties of Ba_(1 − x)Sr_xTiO₃ powders depend on the Ba/Sr ratios. When the Sr fraction is 0.10, the dielectric constant is relatively higher and the dielectric loss is relatively lower, which are more than 2000 and less than 2.0 × 10^− 2 at 1000 Hz, respectively, the most important is that this kind of powder has better frequency stability. La-doping can increase the dielectric constant distinctly, but the dielectric loss can also be increased. Their dielectric properties at 1.0 × 10³ Hz are better than those at 1.0 × 10⁵ Hz. At 1.0 × 10³ Hz the dielectric constant is much higher, while the dielectric loss is much lower. The dielectric constant of different La-doping contents is nearly 3.5 × 10⁴ and the dielectric loss is less than 0.20 when La fraction is 0.008. The La-doped BST sample also has better frequency stability, especially at high frequency. La-doped BST thin films are successfully deposited on mild steel substrates by using plasma spray system with suspension precursors of Ba_0.90Sr_0.10TiO₃·0.8La powders. The XRD patterns of Ba_0.90Sr_0.10TiO₃ and Ba_0.90Sr_0.10TiO₃·0.8La powders are almost the same. No new peaks appear after La-doping, but the peaks move slightly to a larger degree, which indicates that the element La has entered the lattice of the Ba_0.90Sr_0.10TiO₃ and has made the constant of the crystal cell reduce. The XRD pattern of the thin films is just like that of the Ba_0.90Sr_0.10TiO₃·0.8La powders except a peak corresponding to Fe substrate. The SEM results show that the thin films have a uniform and smooth surface. The morphology of cross-section shows a columnar grain structure indicating smooth surface and uniform thickness of the film. The thickness of the film is about 15 um. The thin films obtained are expected to be prospective material for applications in tunable microwave devices.     

Synthesis, low-temperature sintering and the dielectric properties of the ZnO-(1 − x)TiO2-xSnO2 (x = 0.04-0.2)

ZnO-(1 − x)TiO₂-xSnO₂ (x = 0.04-0.2) ceramics were prepared by conventional mixed-oxide method combined with a chemical processing. Fine particle powders were prepared by chemical processing to activate the formation of compound and to improve the sinterability. One wt.% of V₂O₅ and B₂O₃ with the mole ratios of 3:1 were used to lower the sintering temperature of ceramics. The effect of Sn content on phase structure and dielectric properties were investigated. The results show that the substituting Sn for Ti accelerates the hexagonal phase transition to cubic phase, and an inverse spinel structure Zn₂(Ti_1−xSn_x)O₄ solid solution forms. The best dielectric properties obtained at x = 0.12. The ZnO-0.88TiO₂-0.12SnO₂ ceramics sintered at 900 °C exhibit a good dielectric property: ?_r = 29 and tan δ = 9.86 × 10⁻⁵. Due to their good dielectric properties, low firing characteristics, ZnO-(1 − x)TiO₂-xSnO₂ (x = 0.04-0.2) can serve as the promising microwave dielectric capacitor.     

Microwave dielectric properties of Ba2 − xSrxLa3Ti3NbO15 ceramics

High dielectric constant and low loss ceramics in the system Ba_2 − xSr_xLa₃Ti₃NbO₁₅ (x = 0-1) have been prepared by conventional solid-state ceramic route. Ba_2 − xSr_xLa₃Ti₃NbO₁₅ solid solutions adopted A₅B₄O₁₅ cation-deficient hexagonal perovskite structure for all compositions. The materials were characterized at microwave frequencies. They show a linear variation of dielectric properties with the value of x. Their dielectric constant varies from 48.34 to 43.03, quality factor Q_u × f from 20,291 to 39,088 GHz and temperature variation of resonant frequency from 8 to 1.39 ppm/°C as the value of x increases. These low loss ceramics might be used for dielectric resonator (DR) applications.     

Study of flash evaporated CuIn1 − xGaxTe2 (x = 0, 0.5 and 1) thin films

CuIn_1 − xGa_xTe₂ thin films with x = 0, 0.5 and 1, have been prepared by flash evaporation technique. These semiconducting layers present a chalcopyrite structure. The optical measurements have been carried out in the wavelength range 200-3000 nm. The linear dependence of the lattice parameters as a function of Ga content obeying Vegard's law was observed. The films have high absorption coefficients (4 · 10⁴ cm^− 1) and optical band gaps ranging from 1.06 eV for CuInTe₂ to 1.21 eV for CuGaTe₂. The fundamental transition energies of the CuIn_1 − xGa_xTe₂ thin films can be fitted by a parabolic equation namely E_g1(x) = 1.06 + 0.237x − 0.082x². The second transition energies of the CuInTe₂ and CuGaTe₂ films were estimated to be: E_g2 = 1.21 eV and E_g2 = 1.39 eV respectively. This variation of the energy gap with x has allowed the achievement of absorber layers with large gaps.