Electrical properties of sol-gel processed barium titanate films

The sol-gel technique has been used to prepare ferroelectric barium titanate (BaTiO₃) films. The electrical properties of the films have been investigated systematically. The room temperature dielectric constant (ε) and loss tangent (tanδ) at 1 kHz were respectively found to be 370 and 0.012. Both ε and tanδ showed anomaly peaks at 125°C. The room temperature remanant polarization (P_r) and coercive field (E_c) were found to be 3.2 μC/cm² and 30 kV/cm, respectively. The capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics also showed hysteresis effect. The temperature variation of C–V and G–V characteristics also confirms the ferroelectric to paraelectric phase transition at 125°C.     

Temperature-independent electron tunneling injection in tris (8-hydroxyquinoline) aluminum thin film from high-work-function gold electrode

We fabricated electron-only tris (8-hydroxyquinoline) aluminum (Alq₃) single-layer devices with a device structure of glass substrate/MgAg anode (100 nm)/Alq₃ layer (100 nm)/metal cathode (100 nm), and systematically varied the work functions (WF) of the metal cathodes from WF = − 1.9 (Cs) to − 2.9 (Ca), − 3.8 (Mg), − 4.4 (Al), − 4.6 (Ag), and − 5.2 eV (Au) to investigate how electron injection barriers at the cathode/Alq₃ interfaces influence their current density–voltage (J–V) characteristics. We found that current densities at a certain driving voltage decrease and the temperature dependence of J–V characteristics of the devices gradually becomes weaker as the work functions of the metal cathodes are decreased. The device with the highest-work-function Au cathode exhibited virtually temperature-independent J–V characteristics, suggesting that a current flow mechanism of this device is mainly controlled by electron tunneling injection at the Au/Alq₃ interface.     

Radiation spectra in GaN-based LEDs under thermal-injection processes

The effects of series current magnitude (I) upon the intrinsic UV luminescence band (λ370 nm) and the impurity of the blue band (λ430 nm) of a GaN LED has been investigated. The excess device temperature (ΔT_AR) of the GaN LED active region has been determined over a wide range of working currents. It has a linear behaviour for currents over 15 mA. The weaker dependence ΔT_AR(i) at i<15 mA is due to the fact that at forward biases V<E_g/e all the power terminated to the device is released in the space charge region (w≤0.3 μm).     

Thermal neutron cross-section and resonance integral for Dy(n,γ)Dy reaction

The thermal neutron cross-section (σ₀) and the resonance integral (I₀) of the reaction ¹⁶⁴Dy(n,γ)¹⁶⁵Dy were measured by the activation method, using ⁵⁵Mn(n,γ)⁵⁵Mn monitor reaction as a single comparator. The diluted MnO₂ and Dy₂O₃ powder samples within and without a cylindrical Cd shield case were irradiated in an isotropic neutron field obtained from the ²⁴¹Am–Be neutron sources, moderated with paraffin wax. The γ-ray spectra from the irradiated samples were measured by high-resolution γ-ray spectrometry with a calibrated n-type Ge detector. The necessary correction factors for γ-ray attenuation, thermal neutron and resonance neutron self-shielding effects and epithermal neutron spectrum shape factor () were taken into account in the determinations. The thermal neutron cross-section for ¹⁶⁴Dy(n,γ)¹⁶⁵Dy reaction studied has been determined to be 2672±104 b at 0.025 eV. This result has been obtained relative to the reference thermal neutron cross-section value of 13.3±0.1 b for the ⁵⁵Mn(n,γ)⁵⁶Mn reaction. For the thermal neutron cross-section, most of the experimental data and evaluated one in ENDF/B-VI, in general, are in good agreement with the present result. The resonance integral has also been measured relative to the reference value of 14.0±0.3 b for the ⁵⁵Mn(n,γ)⁵⁶Mn monitor reaction using a 1/E¹⁺ epithermal neutron spectrum of the ²⁴¹Am–Be neutron source. By defining Cd cut-off energy 0.55 eV, the resonance integral obtained was 527±89 b. The existing experimental and evaluated data for the resonance integral are distributed from 335 to 820 b. The present resonance integral value agrees with some previously reported values, 520 b by Holden, 505 b by Simonits et al. and 575±100 b by Heft, within the limits of error.     

The evolution of a-GaAs1−xNx/c-GaAs interface states as a function of Ar-NH3 plasma

This work concerns investigations on electrical properties of amorphous GaAs_1−xN_x thin films grown on GaAs substrates. Film deposition was carried out by RF sputtering of a GaAs target by adding a nitrogen carrier gas (NH₃) to an Ar plasma. Chemical etching of substrates followed by different plasma treatments (like reverse bias and/or NH₃ glow discharge) prior to film deposition have been studied. The effects of substrate and growth temperature and of total pressure in the reactor have been analysed. Electrical characteristics (C–V and C–V(T)) have enabled us to put in evidence the evolution of interface states of the a-GaAs_1−xN_x/c-GaAs junctions. The amorphous GaAs_1−xN_x thin films are potentially interesting to be considered for GaAs-based MIS structures, due to their relatively high resistivity values, or as passivating layers on GaAs devices.     

Dissociation process of CH4/H2 gas mixture during EACVD

The dissociation process of CH₄/H₂ gas mixture during EACVD has been investigated using Monte Carlo simulation for the first time. The electron velocity distribution and H₂ dissociation were obtained over a wide range: 100<E/N<2000 Td. The variation of CH₄ dissociation with CH₄ concentration in the filling gas has been simulated. The electron velocity profile is asymmetric for the component parallel to the field. Most electrons possess non-zero velocity parallel to the substrate. The number of atomic H is a function of E/N. There are two peaks at E/N=177 Td and 460 Td. The appropriate E/N is suggested to be 500–800 Td for low temperature deposition. The main diamond growth precursor is proposed to be CH₃ and CH₃⁺.     

Low temperature UV/ozone oxidation formation of HfSiON gate dielectric

Physical and electrical properties of hafnium silicon oxynitride (HfSi_xO_yN_z) dielectric films prepared by UV ozone oxidation of hafnium silicon nitride (HfSiN) followed by annealing to 450 °C are reported. Interfacial layer growth was minimized through room temperature deposition and subsequent ultraviolet/ozone oxidation. The capacitance–voltage (C–V) and current–voltage (I–V) characteristics of the as-deposited and annealed HfSi_xO_yN_z are presented. These 4 nm thick films have a dielectric constant of 8–9 with 12 at.% Hf composition, with a leakage current density of 3×10⁻⁵ A/cm² at V_fb+1 V. The films have a breakdown field strength >10 MV/cm.     

Electric characterization of HfO2 thin films prepared by chemical solution deposition

Hafnium dioxide (HfO₂) thin films were prepared on Si substrates using the chemical solution deposition (CSD) method. The Au/HfO₂/n-Si/Ag structures were characterized by X-ray diffraction (XRD), C–V curves and leakage current measurements. A relative dielectric constant of about 13.5 was obtained for the 65 nm HfO₂ film. Atomic force microscopy (AFM) measurements show uniform surfaces of the films. C–V hysteresis was found for the metal-oxide-semiconductor (MOS) structures with HfO₂ films of 52 and 65 nm thick. It is found that the width of C–V windows is related with the thickness of the HfO₂ films. Furthermore, the C–V hysteresis reveals the possibility of stress-effect, suggesting that it is possible to use HfO₂ to build an MOS structure with controllable C–V windows for memory devices. The leakage current decreases as the film thickness increases and a relatively low leakage current density has been achieved with the HfO₂ film of 65 nm.     

Optical transitions near the band edge in bulk CuInxGa1−xSe2 from ellipsometric measurements

From the analysis of the variation of optical absorption coefficient with incident photon energy between 0.8 and 2.6 eV, obtained from ellipsometric data, the energy E_G of the fundamental absorption edge and E_G′ of the forbidden direct transition for CuIn_xGa_1−xSe₂ alloys are estimated. The change in E_G and the spin-orbit splitting Δ_SO=E_G′−E_G with the composition x can be represented by parabolic expression of the form E_G(x)=E_G(0)+ax+bx² and Δ_SO(x)=Δ_SO(0)+a′x+b′x², respectively. b and b′ are called “bowing parameters”. Theoretical fit gives a=0.875 eV, b=0.198 eV, a′=0.341 eV and b′=−0.431 eV. The positive sign of b and negative sign of b′ are in agreement with the theoretical prediction of Wei and Zunger [Phys. Rev. B 39 (1989) 6279].     

Spin-dependent tunnelling in La0.7Sr0.3MnO3/SrTiO3 superlattices

La_0.7Sr_0.3MnO₃ is predicted to show half-metallic behaviour at low temperature, which gives rise to a metallic character for one spin direction and an insulating character for the other. This 100% polarisation of the conduction band should enhance the spin dependent tunnelling in manganite-based tunnel junctions. La_0.7Sr_0.3MnO₃/SrTiO₃ epitaxial superlattices were grown on LaAlO₃(001) substrates by metal–organic chemical vapour deposition (MOCVD). These multilayers consist of 15 epitaxial bilayers of La_0.7Sr_0.3MnO₃ and SrTiO₃. The junctions were patterned using UV lithography and Ar ion milling to carry out transport measurements in the current perpendicular-to-plane geometry (CPP). A temperature-independent non-linear I–V curve, which is characteristic of a tunnelling conduction mechanism, was observed below 50 K. At higher temperatures, the I–V curves are found to become linear and temperature-dependent. Up to 30 K, a constant tunnel magnetoresistance (TMR) (3%) is measured. The switching field is consistent with the film coercive field (a few 10s of mT). At higher temperatures, the TMR decreases rapidly. This temperature dependence is compared to the expected behaviour of a spin tunnel junction with half-metallic electrodes, with thermal activation or the loss of spin polarisation taken into account.     

Fabrication of a depletion mode GaAs MOSFET using Al2O3 as a gate insulator through the selective wet oxidation of AlAs

A 1 μm thick undoped GaAs buffer layer, a 1500 Å thick n-type GaAs layer, an undoped 500 Å thick AlAs layer and a 50 Å thick GaAs cap layer were consecutively grown by molecular beam epitaxy (MBE) on a [100] oriented semi-insulating GaAs substrate. The AlAs layer was oxidized in a N₂ bubbled H₂O vapor ambient at 400°C for 3 h and fully converted to Al₂O₃ for use as a gate insulator. The I–V characteristics, having a maximum drain current of 10.6 mA, a current cut-off voltage of −4.5 V and a maximum transconductance value of 11.25 mS/mm, indicate that the selective wet thermal oxidation of AlAs/GaAs was successful in producing a depletion mode GaAs MOSFET.     

First principles calculations of thermal equations of state and thermodynamical properties of MgH2 at finite temperatures

We present the first principles calculations of the thermodynamical properties of magnesium hydride (MgH₂) over a temperature range of 0–1000 K. The phonon dispersions are determined within the density functional framework and are used to calculate the free energy of MgH₂ within the quasiharmonic approximation (QHA) at each cell volume and temperature T. Using the free energies the thermal equation of state (EOS) is derived at several temperatures. From the thermal EOS structural parameters such as the equilibrium cell volume (V₀) and elastic properties, namely, bulk modulus (K₀) and its pressure derivative are computed. The free energies are also used to calculate various thermodynamical properties within QHA. These include internal energy E, entropy S, specific heat capacity at constant pressure C_P, thermal pressure P_thermal(V, T) and volume thermal expansion ΔV/V (%). The good agreement of calculated values of S and C_P with experimental data exhibits that QHA can be used as a tool for calculating the thermodynamical properties of MgH₂ over a wide temperature range. P_thermal(V,T) increases strongly with T at all the volumes but it is a slowly varying function of volume for T = 298–500 K. According to Karki [B.B. Karki, Am. Miner. 85 (2000) 1447] such volume based variations can be neglected and so it is possible to estimate the thermal EOS only with the knowledge of the measured P_thermal(V, T) versus temperature at ambient pressure and isothermal compression data at ambient temperature. Temperature dependence of ΔV/V(%) shows that V₀ increased with increase in temperature. However, the percentage decrease in K₀ superseded this percentage increase in V₀ even at temperatures moderately higher than 298 K. Therefore, we suggest application of temperature (T > 298 K) as an approach to enhance the hydrogen storage capacity of MgH₂ because of its better compressibility at these temperatures.     

Characterization and modeling of transition edge sensors for high resolution X-ray calorimeter arrays

Characterizing and understanding, in detail, the behavior of a Transition Edge Sensor (TES) is required for achieving an energy resolution of 2 eV at 6 keV desired for future X-ray observatory missions. This paper will report on a suite of measurements (e.g. impedance and I–V among others) and simulations that were developed to extract a comprehensive set of TES parameters such as heat capacity, thermal conductivity, and R(T,I), (T,I), and β_i(T,I) surfaces. These parameters allow for the study of the TES calorimeter behavior at and beyond the small signal regime.     

Structural and optical properties of (100 − x)(Li2B4O7) − x(SrO–Bi2O3–0.7Nb2O5–0.3V2O5) glasses and glass nanocrystal composites

Glasses of various compositions in the system (100 − x)(Li₂B₄O₇) − x(SrO–Bi₂O₃–0.7Nb₂O₅–0.3V₂O₅) (10  x  60, in molar ratio) were prepared by splat quenching technique. The glassy nature of the as-quenched samples was established by differential thermal analyses (DTA). The amorphous nature of the as-quenched glasses and crystallinity of glass nanocrystal composites were confirmed by X-ray powder diffraction studies. Glass composites comprising strontium bismuth niobate doped with vanadium (SrBi₂(Nb_0.7V_0.3)₂O_9−δ (SBVN)) nanocrystallites were obtained by controlled heat-treatment of the as-quenched glasses at 783 K for 6 h. High resolution transmission electron microscopy (HRTEM) of the glass nanocrystal composites (heat-treated at 783 K/6 h) confirm the presence of rod shaped crystallites of SBVN embedded in Li₂B₄O₇ glass matrix. The optical transmission spectra of these glasses and glass nanocrystal composites of various compositions were recorded in the wavelength range 190–900 nm. Various optical parameters such as optical band gap (E_opt), Urbach energy (ΔE), refractive index (n), optical dielectric constant and ratio of carrier concentration to the effective mass (N/m^*) were determined. The effects of composition of the glasses and glass nanocrystal composites on these parameters were studied.     

Studies of weak capture-γ-ray resonances via coincidence techniques

A method for measuring weak capture-γ-ray resonances via γγ-coincidence counting techniques is described. The coincidence apparatus consisted of a large-volume germanium detector and an annular NaI(Tl) crystal. The setup was tested by measuring the weak E_R=227 keV resonance in ²⁶Mg(p,γ)²⁷Al. Absolute germanium and NaI(Tl) counting efficiencies for a range of γ-ray energies and for different detector–target geometries are presented. Studies of the γ-ray background in our spectra are described. Compared to previous work, our method improves the detection sensitivity for weak capture-γ-ray resonances by a factor of ≈100. The usefulness of the present technique for investigations of interest to nuclear astrophysics is discussed.     

D.c. properties of ZnO thin films prepared by r.f. magnetron sputtering

In the development of ZnO-based varistors the electrical properties of ZnO/Bi₂O₃ junctions and of the two individual oxides are being investigated. Following our recent work on a.c. conductivity in Al---ZnO---Al sandwich structures we currently report d.c. measurements. The structures were prepared by r.f. magnetron sputtering in an argon/oxygen mixture in the ratio 4:1. Capacitance-voltage data confirm that the Al/ZnO interface does not form a Schottky barrier and measurements of the dependence of capacitance on film thickness indicate that the relative permittivity of the films is approximately 9.7. With increasing voltage the current density changed from an ohmic to a power-law dependence with exponent n≈3. Furthermore measurements of current density as a function of reciprocal temperature showed a linear dependence above about 240 K, with a very low activation energy below this temperature consistent with a hopping process. The higher temperature results may be explained assuming a room-temperature electron concentration n₀ and space-charge-limited conductivity, dominated by traps exponentially distributed with energy E below the conduction band edge according to N = N₀exp(−E/kT_t), where k is Boltzmann's constant. Typical derived values of these parameters are: n₀ = 7.2 × 10¹⁶ m⁻³, N₀ = 1.31 × 10⁴⁵ J⁻¹ m⁻³ and T_t = 623 K. The total trap concentration and the electron mobility were estimated to be 1.13 × 10²⁵ m⁻³ and (5.7−13.1) ×10⁻³m²V⁻¹s⁻¹ respectively.     

The use of charge transfer interlayers to control hole injection in molecular organic light emitting diodes

In order to improve the performance of the indium–tin oxide (ITO) electrode frequently used as the anode in electroluminescent devices, we report its modification using ultrathin films of C₆₀ and 11,11,12,12-tetracyanonaphtho-2,6-quinodimethane (TNAP). In both cases the interaction between the film and the ITO substrate is found to shift the work function of the electrode, thereby modifying the barrier to hole injection in the model system ITOTPDAlq₃Al (where TPD is N,N′-bis(3-methylphenyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine and Alq₃ is tris(quinolin-8-olato) aluminium). Scanning Kelvin probe measurements show that the ITO work function is increased by as much as 0.25 eV with a TNAP overlayer, whilst C₆₀ overlayers are found to reduce the work function by a comparable amount. The former has been attributed to a charge transfer effect, however, for C₆₀ overlayers the variation in the electrostatic potential across the interface cannot be attributed to charge transfer alone. The performance of devices incorporating these modified ITO electrodes are rationalised in terms of the work function modification, film thicknesses and the hole transport properties of the two films.     

Field-lowering carrier excitation in cadmium arsenide thin films

Cadmium arsenide is a II–V semiconductor which exhibits n-type intrinsic conductivity with high mobility up to μ_n=1.0–1.5 m²/V s. Potential applications include magnetoresistors and both thermal and photodetectors, which require electrical characterization over a wide range of deposition and measurement conditions. The films were prepared by vacuum evaporation with deposition rates in the range 0.5–6.0 nm/s and substrate temperatures maintained at constant values of 20–120°C. Sandwich-type samples were deposited with film thicknesses of 0.1–1.1 μm using evaporated electrodes of Ag and occasionally Au or Al. Above a typical electric field F_b of up to 5×10⁷ V/m all samples showed instabilities characteristic of dielectric breakdown or electroforming. Below this field they showed a high-field conduction process with logJ∝V^1/2, where J is the current density and V the applied voltage. This type of dependence is indicative of carrier excitation over a potential barrier whose effective barrier height has been lowered by the high electric field. The field-lowering coefficient β had a value of (1.2–5.3)×10⁻⁵ eV m^1/2/V^1/2 which is reasonably consistent with the theoretical value of β_PF=2.19×10⁻⁵ eV m^1/2/V^1/2 expected when the field-lowering occurs at donor-like centres in the semiconductor (Poole–Frenkel effect). For thinner films Schottky emission was more probable. The effects of the film thickness, electrode materials, deposition rate, and substrate temperature on the conductivity behaviour are discussed.     

Computational simulations of the dynamic compaction of porous media

The goal of this study was to apply and compare different computational compaction models to the dynamic compaction of porous silicon dioxide (SiO₂) powder. Three initial specific volumes were investigated in this study, V₀₀=1.3, 4 and 10 cm³/g, where the solid material specific volume is V₀=0.4545 cm³/g. Two hydrodynamic codes, KO and CTH, were used to simulate the experimental results. Two compaction models, P– and P–λ were implemented within CTH in conjunction with the Mie–Grüneisen (MG) equation of state. The snowplow (SP) compaction model was implemented within KO. In addition, the MG equation of state based on the experimentally measured Hugoniot was implemented within CTH and was compared to the data as well. One-dimensional flyer plate experiments were conducted with impact velocities ranging from 0.25 to 1.0 km/s, which corresponded to a shock incident pressure range of 0.77–2.25 GPa. The computational simulations were compared to the temporal lateral stress signatures measured with manganin gauges, placed before and after the silica powder. It was found that the MG equation of state (EOS) most accurately reproduce all of the experimental data whereas none of the compaction models accurately reproduced all of the experimental data. However, of the compaction models investigated that the P– model tended to outperform the other considered.     

Corrosion of tin in citric acid solution and the effect of some inorganic anions

The corrosion behaviour of tin in different concentrations of citric acid solutions (0.3–1.0 M, pH=1.8) was studied at 30 °C by potentiodynamic technique. The E/I profiles exhibit an active passive behaviour. The active dissolution involves one anodic peak A associated with a dissolution of the metals as Sn(II) species. The passivity is due to the formation of thin film of SnO₂ and or Sn(OH)₄ on the anode surface. The cathodic sweep shows a small peak C related to the reduction of the passive film. The peak current density I_p of peak A increases with increasing both acid concentration and sweep rate.

The effects of adding increasing concentrations of Na₂CrO₄, NaMoO₄, NaNO₃ and NaNO₂ on the corrosion of tin in 0.5 M citric acid at 30 °C were investigated. Both CrO₄²⁻ and MoO₄²⁻ ions inhibit the corrosion of tin and the extent of inhibition enhances with their concentrations. Addition of either NO₃⁻ or NO₂⁻ accelerates the corrosion of tin. NO₃⁻ ions are more aggressive than NO₂⁻ ions.