A 650-GHz Band SIS Receiver for Balloon-Borne Limb-Emission Sounder

A superconducting low-noise receiver has been developed for atmospheric observations in the 650-GHz band. A waveguide-type tunerless mixer mount was designed based on one for the 200-GHz band. Two niobium SIS (superconductor-insulator-superconductor) junctions were connected by a tuning inductance to cancel the junction capacitance. We designed the ωR_nC_j product to be 8 and the current density to be 5.5 kA/cm². The measured receiver noise temperature in DSB was 126-259 K in the frequency range of 618-660 GHz at an IF of 5.2 GHz, and that in the IF band (5-7 GHz) was 126-167 K at 621 GHz. Direct detection measurements using a Fourier transform spectrometer (FTS) showed the frequency response of the SIS mixer to be in the range of about 500-700 GHz. The fractional bandwidth was about 14%. The SIS receiver will be installed in a balloon-borne limb-emission sounder that will be launched from Sanriku Balloon Center in Japan.     

A Low-Noise 230 GHz SIS Receiver for Radio Astronomy Employing Untuned Nb/AlOx/Nb Tunnel Junctions

A heterodyne receiver based on a ～1/3 reduced height rectangular waveguide SIS mixer with two mechanical tuners has been built for astronomical observations of molecular transitions in the 230 GHz frequency band. The mixer used an untuned array (ωR_nC_j≈3, R_n≈70 Ω) of four Nb/AIOx/Nb tunnel junctions in series as a nonlinear mixing element. A reasonable balance between the input and output coupling efficiencies has been obtained by choosing the junction number N=4. The receiver exhibits DSB (Double Side Band) noise temperature around 50 K over a frequency range of more than 10 GHz centered at 230 GHz. The lowest system noise temperature of 38 K has been recorded at 232.5 GHz. Mainly by adjusting the subwaveguide backshort, the SSB (Single Side Band) operation with image rejection of ≥ 15 dB is obtained with the noise temperature as low as 50 K. In addition, the noise contribution from each receiver component has been studied further. The minimum SIS mixer noise temperature is estimated as 15 K, pretty close to the quantum limit ?v/k～11 K at 230 GHz. It is believed that the receiver noise temperatures presented are the lowest yet reported for a 230 GHz receiver using untuned junctions.     

Low noise submillimeter SIS receiver with niobium nitride quasiparticle tunnel junctions

We have developed and tested a submillimeter waveguide SIS mixer with NbN-MgO-NbN quasiparticle tunnel junctions. The two junction array is integrated in a full NbN printed circuit. The NbN film critical temperature is 15 K and the junction gap voltage is 5 mV. The size of the junctions is 1.4 × 1.4 µm and Josephson critical current density is about 1.5 KA/cm² resulting in junction R_NωC product about 40. The inductive tuning circuit in NbN is integrated with each junction in two junction array. A single non contacting backshort was tuned at each frequency in the mixer block. At 306 GHz the minimum DSB receiver noise temperature is as low as 230 K. The sources of the receiver noise and of the limits of the NbN SIS submillimeter mixer improvement are discussed.     

Wide-band low noise MM-wave SIS mixers with a single tuning element

Several SIS quasiparticle mixers have been designed and tested for the frequency range from 80 to 115 GHz. The sliding backshort is the only adjustable RF tuning element. The RF filter reactance is used as a fixed RF matching element. A mixer which uses a single 2×2 μm² Pb-alloy junction in a quarter-height waveguide mount has a coupled conversion gain of G_M(DSB)=2.6±0.5 dB with an associated noise temperature of T_M(DSB)=16.4±1.8 K at the best DSB operation point. The receiver noise temperature T_R(DSB) is 27.5±0.8 K for the mixer test apparatus. This mixer provides a SSB receiver noise temperature below 50 K over the frequency range from 91 to 96 GHz, the minimum being T_R(SSB)=44±4 K. Another mixer with an array of five 5×5 μm² junctions in series in a full-height wave-guide mount has much lower noise temperature T_M(DSB)=6.6±1.6 K, but less gain G_M(DSB)=?5.1±0.5 dB.     

Design Consideration for a Two-Distributed-Junction Tuning Circuit

We describe a novel method of designing a tuning circuit with two half-wave distributed junctions separated by a half-wavelength microstripline, which analytically determines the circuit parameters such as the minimum current density of the junctions and the characteristic impedances of the distributed junctions and the microstripline. The tuning circuit was approximated by simple transmission theory and then simplified with ideal circuit components for analysis. We applied Chebyshev’s band-pass filter theory, in part, to optimize the circuit design. The analytical results revealed that a high characteristic-impedance ratio between the distributed junctions and the microstripline is necessary to obtain broadband matching using low-current-density junctions. The experimental results for all-NbN SIS mixers we designed with this method demonstrated double-sideband (DSB) receiver-noise temperatures of 6–10 quanta from 710 to 810 GHz for a mixer with a current density of only 4 kA/cm² (estimated ωC_JR_N product of 37 at 750 GHz). The RF bandwidth was broader than that of a conventional full-wave distributed SIS mixer with the same current density.     

A Fixed-Tuned W-Band Waveguide SIS Mixer with 4.0-7.5 GHz IF

The design and performance of a fixed-tuned W-band SIS mixer with a wide band IF of 4.0-7.5 GHz is presented. Waveguide-to-stripline transition of the SIS mixer is designed using the lumped-gap-source port provided by HFSS^TM. Measured receiver noise temperature is less than 25 K in the frequency range of 95-120 GHz, with a minimum value of around 19 K achieved. Mixer noise temperature is determined to be about 8.5 K, which is around twice the quantum limit (i.e., 2hw/k). In spite of the high IF frequencies (f ₀ = 6 GHz), the performance of the SIS receiver is comparable or even superior to those of the best mechanically-tunable waveguide SIS receivers at low IF frequencies (f ₀ = 1.5 GHz). This result suggests that it is easy to design waveguide-to-stripline transitions without scale-model measurements.     

Spurious-response suppression evaluation of space qualified millimeter wave mixers: A distributed and parasitic effects approach

In millimeter wave space communications packaged devices are usually involved for environmental and EMI protection reasons. Therefore, distributed and parasitic effect considerations become an important issue for the design and performance evaluation of space qualified frequency translating devices. Indeed, the accuracy of the usually adapted exponential I/V curve of an ideal (distributed and parasitic effects-free) diode, is considered to be not adequate for the prediction of spurious-response suppressions related to such millimeter wave diode mixers. In this paper the effects of parasitic [C_p] and distributed [C_j(ν)] diode capacitance in a single-tone spurious products evaluation of a commercially available Schottky-barrier based single-ended mixer, are investigated for frequencies up to 120 GHz. The reported results accurately demonstrate that the suppression of 3th and 5th order spurious products is strongly related to the variation of C_p and C_j(ν) with frequency.     

A Low-Noise Terahertz SIS Mixer Incorporating a Waveguide Directional Coupler for LO Injection

We have developed a low-noise heterodyne waveguide Superconductor-Insulator-Superconductor (SIS) mixer with a novel local oscillator (LO) injection scheme for the Atacama Large Millimeter/submillimeter Array (ALMA) band 10, over the frequency range 0.78–0.95 THz. The SIS mixer uses radio frequency (RF) and LO receiving horns separately and a waveguide 10 dB LO coupler integrated in the mixer block. The insertion loss of the waveguide and coupling factor of the coupler were evaluated at terahertz frequencies at both room and cryogenic temperatures. The double-sideband (DSB) receiver noise temperatures were below 330 K (7.5hf/k _B) at LO frequencies in the range 0.801–0.945 THz. The minimum temperature was 221 K at 0.873 THz over the intermediate frequency range of 4–12 GHz at an operating temperature of 4 K. This waveguide heterodyne SIS mixer exhibits great potential for practical applications, such as high-frequency receivers of the ALMA.     

Low noise SIS mixer for 230 GHz receivers of plateau de bure interferometer

We present a SIS mixer developed for 200 – 250 GHz band receivers of Plateau de Bure Interferometer. We demonstrate the minimum DSB receiver noise of 20 K at 220 GHz. The average receiver noise of 25 K is possible in 200 – 250 GHz range. The receiver conversion gain and output noise instability of 10^?4 on the time scale of 1 minute is comparable with the Shottky receivers performance. The minimum measured SIS mixer noise of about 10 K is close to the quantum limit. The waveguide SIS mixer with a single backshort has two junction array with inductively tuned junctions. The Nb/Al Oxide/Nb SIS junctions are 2.24 µm² each with the Josephson critical current density of 3.2 KA/cm². The thermal properties of the SIS mixer are studied. The mixer band of the low noise operation is in a good agreement with the design requirements.     

345 GHZ PROTOTYPE SIS MIXER WITH INTEGRATED MMIC LNA

We report on heterodyne measurements at submillimeter wavelengths using a receiver with a Superconductor-Insulator-Superconductor (SIS) mixer device and a Microwave Monolithic Integrated Circuit (MMIC) cryogenic low noise amplifier (LNA) module integrated into the same block. The mixer characterization presented in this work demonstrates the feasibility of operating a MMIC LNA in close proximity to the SIS device without penalty in mixer performance due to heating effects. Verification of this functionality is crucial for the ongoing development of SuperCam, a 64-pixel focal plane array receiver consisting of eight, 1 × 8 integrated mixer/LNA modules. The test setup included a mixer block modified to accept a MMIC amplifier. Our tests show that the LNA can be operated over a broad range of V_drain voltages from 0.40–1.40 V, corresponding to dissipative powers of 2.6–29 mW. We observe no significant effect on the measured uncorrected receiver noise temperatures in the 345 GHz band.     

180–425 GHz low noise SIS waveguide receivers employing tuned Nb/AIO x /Nb tunnel junctions

We report recent results on a 20% reduced height 270–425 GHz SIS waveguide receiver employing a 0.49 µm² Nb/AlO _x /Nb tunnel junction. A 50% operating bandwidth is achieved by using a RF compensated junction mounted in a two-tuner reduced height waveguide mixer block. The junction uses an “end-loaded” tuning stub with two quarter-wave transformer sections. We demonstrate that the receiver can be tuned to give 0–2 dB of conversion gain and 50–80% quantum efficiency over parts of it's operating range. The measured instantaneous bandwidth of the receiver is ≈ 25 GHz which ensures virtually perfect double sideband mixer response. Best noise temperatures are typically obtained with a mixer conversion loss of 0.5 to 1.5 dB giving uncorrected receiver and mixer noise temperatures of 50K and 42K respectively at 300 and 400 GHz. The measured double sideband receiver noise temperature is less than 100K from 270 GHz to 425 GHz with a best value of 48K at 376 GHz, within a factor of five of the quantum limit. The 270–425 GHz receiver has a full 1 GHz IF passband and has been successfully installed at the Caltech Submillimeter Observatory in Hawaii. Preliminary tests of a similar junction design in a full height 230 GHz mixer block indicate large conversion gain and receiver noise temperatures below 50K DSB from 200–300 GHz. Best operation is again achieved with the mixer tuned for 0.5–1.5 dB conversion loss which at 258 GHz resulted in receiver and mixer noise temperature of 34K and 27K respectively.     

Application of Inductive Topological Transfer Function Generation for a Cascaded Low-Pass Filter

This work presents applications of an inductive topological approach in the calculation of the transfer function of a cascading network control system. The method provides a very versatile and effective way of counting all the graphs that contribute and of translating them into their algebraic contribution. The contributing graphs are very simple and reflect the morphology of the original control system signal flow graph. Application of the method and results are presented for an n-cell RC network. We derive an analytical formula relating ω(3 dB) to the filter size (n) and R _j C _j (j=1,2,…,n). This formula can be used for designing preset frequency range self-loaded LP filters by varying their size. We also derive general expressions for the sensitivities which we use to observe a sensitivity-insensitivity filter transition for various frequency ranges, relaxation times, and, most importantly, filter sizes.     

Fanatic: An SIS radiometer for radio astronomy from 660 to 695 GHz

FANATIC is a compact radiometer optimized for radio astronomy from about 660 to 695 GHz (λλ 455 – 432 µm). We observed a large number of molecular and atomic spectral lines from galactic and extragalactic sources duringFANATIC's first run on the James Clerk Maxwell Telescope in early March 1994. Double sideband receiver temperatures during observations were about 800 K (25hv/k). The heart of the receiver is a two-junction Nb/AlO_x/Nb SIS array fed by a sandwiched V-Antenna. The junction array and antenna are fabricated together at IRAM's Grenoble SIS laboratory. Each junction has a normal resistance of R_n ～ 10 Ω, an area of ～ 2 µm², an individual radial stub circuit to resonate the capacitance, and a λ/4 transformer to match to the antenna. The solid-state local oscillator is a mm-wave Gunn oscillator followed by a doubler and tripler. The LO diplexer is a Martin-Puplett interferometer, which insures that there is always abundant LO power for operation and speedy tuning. The receiver and telescope coupling optics, LO, dewar, and calibration system fit on an 0.6 × 0.8 m optical breadboard.     

Low noise 80–115 GHz quasiparticle mixer with small Nb/Al-Oxide/Nb tunnel junctions

Millimeter-wave characterization of a heterodyne receiver using (2 μm²) Nb/Al-Ox/Nb Superconducting-Insulator-Superconducting (SIS) junctions arrays is reported. The fabrication of the Nb/Al-Ox/Nb SIS junction arrays as a heterodyne mixer is described. The leakage current of these junctions is below 2μA at 4.2K and unmeasurable at 2.5K. The receiver gave a noise temperature Double Side Band (DSB) between 63K and 187K over the frequency range 80 to 115 GHz at the first conversion peak. The results are comparable to those obtained with SIS receivers using well researched lead junctions. Contrary to the lead junctions, our mixer using all Nb junctions have proven remarkably stable with respect to thermal cycling, characteristics which are required for space applications. To our knowledge, this is the most reliable low noise receiver operating in this frequency range.     

Noise and thermal properties of a submillimeter mixer with the SINS tunnel junction

In this work we present for the first time a low-noise submillimeter receiver with a mixer using Superconductor-Insulator-Normal metal-Superconductor (SINS) junctions. Junctions containing a normal metal layer may be free of the Josephson current and of the related perturbations of mixer operation specific for the standard SIS mixers. This SINS mixer quality is important for the application in the multibeam submillimeter receiver. The SINS mixer stability of operation and independence on the magnetic field have been confirmed in our experiment. Minimum SINS receiver noise in the 290 – 330 GHz band is about 135 K when the junction R_NωC is about 30. Noise, conversion gain and thermal properties of the SINS mixer have been studied and compared with the SIS mixers. The limit of SINS mixer operation improvement is discussed at the end of the work.     

100 GHz mixer vertically integrated (stacked) SIS junction array

A Vertically Integrated Array (stacked array) of single windowSIS junctions (VIA SIS), based on a stacked five layer structure of Nb-AlO_x-Nb-AlO_x-Nb, has been fabricated and tested in a quasi optical mixer configuration at 106 GHz. This particular VIA SIS design has two stacked junctions fabricated by standard tri-layer process employing photolithography, reactive ion and wet etching processes. A simple expression for calculating the specific capacitance of single and arrayed SIS junctions is suggested. Due to the absence of interconnection leads between the individual junctions and reduced overall capacitance, compared to a single SIS junction, has the VIA SIS good future prospects for use in submillimeter wave SIS mixers The VIA SIS may be regarded as a lumped rather than a distributed structure at least up to the gap frequency at 730 GHz for Nb. DC-IV measurements show high quality of the Individual SIS junctions and good reproducibility of the array parameters over the substrate area. The first VIA SIS mixer experiments yielded a receiver noise temperature of 95 K (DSB) at a LO frequency of 106 GHz.     

Low noise broadband tunerless waveguide sis receivers for 440–500 GHz and 630–690 GHz

We have developed broadband SIS heterodyne receivers for the frequency ranges from 440 to 500 GHz and 630 to 690 GHz. The mixerblocks contain a punched waveguide cavity which forms a fixed backshort. The substrate channel is sawed across the waveguide. The horn antenna is flanged to the mixerblock. The blocks are easy and quickly to manufacture even for the small dimensions needed in the submm wavelength range. We use Nb-Al₂O₃-Nb junctions with areas of 0.8 µm² and integrated three step niobium tuning structures. With this design we achieve instantaneous double sideband receiver noise temperatures around 120 K over the frequency range from 660 to 690 GHz and around 80 K from 440 to 500 GHz. The mixer performance agrees well with the design calculations for the tuning structures.     

A low-noise SIS receiver measured from 480 GHz to 650 GHz using Nb junctions with integrated RF tuning circuits

A heterodyne receiver using an SIS waveguide mixer with two mechanical tuners has been characterized from 480 GHz to 650 GHz. The mixer uses either a single 0.5 × 0.5 µm² Nb/AlO_x/Nb SIS tunnel junction or a series array of two 1 µm² Nb tunnel junctions. These junctions have a high current density, in the range 8 – 13 kA/cm². Superconductive RF circuits are employed to tune the junction capacitance. DSB receiver noise temperatures as low as 200 ± 17 K at 540 GHz, 271 K ± 22 K at 572 GHz and 362 ± 33 K at 626 GHz have been obtained with the single SIS junctions. The series arrays gave DSB receiver noise temperatures as low as 328 ± 26 K at 490 GHz and 336 ± 25 K at 545 GHz. A comparison of the performances of series arrays and single junctions is presented. In addition, negative differential resistance has been observed in the DC I–V curve near 490, 545 and 570 GHz. Correlations between the frequencies for minimum noise temperature, negative differential resistance, and tuning circuit resonances are found. A detailed model to calculate the properties of the tuning circuits is discussed, and the junction capacitance as well as the London penetration depth of niobium are determined by fitting the model to the measured circuit resonances.     

A planar quasi-optical SIS receiver

A planar, quasi-optical SIS (superconductor-insulator-superconductor) receiver operating at 230 GHz is described. The receiver consists of a 2×5 array of half-wave dipole antennas with niobium-aluminum oxide-niobium SIS junctions on a quartz dielectric-filled parabola. The 1.4-GHz intermediate frequency is coupled from the mixer via coplanar strip transmission lines and 4:1 balun transformers. The receiver is operated at 4.2 K in a liquid helium immersion cryostat. Accurate measurements of the performance of single untuned array receiver elements are reported. A mixer noise temperature of 89 K DSB (double sideband), receiver noise temperature of 156 K DSB and conversion loss of 8 dB into a matched load have been obtained. This mixer noise temperature is approximately a factor of two larger than that of current state of the art waveguide mixers using untuned single junctions a the same frequency     

Simple 1 MM Receivers with a Fixed Tuned Double Sideband SIS Mixer and a Wideband INP MMIC Amplifier

We report on techniques to broaden the intermediate frequency (IF) bandwidth of the Berkeley‐Illinois‐Maryland Array (BIMA) 1mm Superconductor‐Insulator‐Superconductor (SIS) heterodyne receivers by combining fixed tuned Double Side Band (DSB) SIS mixers and wideband Monolithic Microwave Integrated Circuit (MMIC) IF amplifiers. To obtain the flattest receiver gain across the IF band we tested three schemes for keeping the mixer and amplifier as electrically close as possible. In Receiver I, we connected separate mixer and MMIC modules by a 1 ″ stainless steel SMA elbow. In Receiver II, we integrated mixer and MMIC into a modified BIMA mixer module. In Receiver III, we devised a thermally split block in which mixer and MMIC can be maintained at different temperatures–in this receiver module the mixer at 4 K sees very little of the 10–20 mW heat load of the biased MMIC at 10 K. The best average receiver noise we achieved by combining SIS mixer and MMIC amplifier is 45 ‐50 K DSB for ν_LO = 215–240 GHz and below 80 K DSB for ν_LO = 205 ‐ 270 GHz. Over an IF frequency band of 1 – 4 GHz we have demonstrated receiver DSB noise temperatures of 40 – 60 K. Of the three receiver schemes, we feel Receiver III shows the most promise for continued development.