Electrical Properties of ZnO-Bi2O3 Ceramics

The nonlinear volt-ampere characteristics and small-signal ac capacitance and resistance of sintered ZnO containing 0.5 mol% Bi₂O₃ were measured. Many of the electrical properties are related directly to the microstructure, which consists of conductive ZnO grains separated by a continuous amorphous Bl₂O₃, phase. The origin of the nonlinear conduction in the intergranular phase was confirmed by experiments with evaporated thin films. The proposed conduction mechanism in varistors containing ZnO and Bi₂O₃ is a combination of hopping and tunneling in the amorphous phase.     

Low Breakdown Voltage Varistors by Grain Boundary Diffusion of Molten Bi2O3 in ZnO

Diffusion of molten Bi₂O₃ into the grain boundaries of sintered, alumina-doped (0.23 and 0.7 mol%) ZnO pellets resulted in varistors with breakdown voltages in the 3–5 V range and nonlinearity coefficients of 10–24. The varistors were fabricated by spreading a thin layer of Bi₂O₃ powder on the surface of ZnO pellets and heating the combination to various temperatures (860–1155°C) and different times. The highest nonlinearity coefficients (20–24) and lowest breakdown voltages (3–5 V) were recorded in samples annealed at 860°C for 35 min. Longer annealing times and/or higher temperatures resulted in progressively higher breakdown voltages. Eventually the devices became insulating, which was attributed to the formation of an insulating Bi₂O₃ layer between the grains. Separate wetting experiments have shown that the penetration of Bi₂O₃ into ZnO grain boundaries was a strong function of alumina doping —the penetration rate was decreased by a factor of 5–7 as the ZnO was doped with as little as 0.2 mol% alumina. It is this slowing down of the penetration of the ZnO grain boundaries that is believed to be critical in the development of the low breakdown voltages observed.     

Zinc Oxide Varistor Gas Sensors: I, Effect of Bi2O3 Content on the H2-Sensing Properties

Current ( I )-voltage ( V ) characteristics of porous ZnO varistors with different Bi₂O₃ content have been investigated in air as well as in H₂-air mixtures in the temperature range room temperature (RT)-600°C. The I-V characteristics measured at RT remained unchanged in the presence of H₂, but the breakdown voltage clearly shifted to a lower electric field in the temperature range 400–600°C. The breakdown voltage decreased with increasing H₂ concentration in air. The optimum amount of Bi₂O₃ for the largest decrease was found to be 1.0 mol%. Thus, ZnO varistors can be used as a new type of H₂ sensor. The results presented in this study also suggest the important role of excess oxygen ions existing at the ZnO-ZnO grain boundaries in developing the Schottky barrier as well as in the H₂-sensing mechanism of the varistors.     

Grain Growth of ZnO during Bi2O3 Liquid-Phase Sintering

Grain growth of ZnO during the liquid-phase sintering of binary ZnO–Bi₂O₃ ceramics has been studied for Bi₂O₃ contents from 3 to 12 wt% and sintering from 900° to 1400°C. The results are considered in combination with previously published studies of ZnO grain growth in the ZnO–Bi₂O₃ system. For the Bi₂O₃ contents of the present study, the rate of ZnO grain growth is found to decrease with increasing Bi₂O₃. Activation analysis, when combined with the results of similar analyses of the previous studies, reveals a change in the rate-controlling mechanism for ZnO grain growth. Following a low-Bi₂O₃-content region of nearly constant activation energy values of about 150 kJ/mol, further Bi₂O₃ additions cause an increase of the activation energy to about 270 kJ/mol. consistent with accepted models of liquid-phase sintering, it is concluded that the rate-controlling mechanism of ZnO grain growth during liquid-phase sintering in the presence of Bi₂O₃ changes from one of a phase-boundary reaction at low Bi₂O₃ levels to one of diffusion through the liquid phase at about the 5 to 6 wt% Bi₂O₃ level and above.     

Grain Growth in Sintered ZnO and ZnO-Bi2O3 Ceramics

Grain growth in a high-purity ZnO and for the same ZnO with Bi₂O₃ additions from 0.5 to 4 wt% was studied for sintering from 900° to 1400°C in air. The results are discussed and compared with previous studies in terms of the phenomenological kinetic grain growth expression: G ⁿ— G ⁿ₀= K ₀ t exp(— Q/RT ). For the pure ZnO, the grain growth exponent or n value was observed to be 3 while the apparent activation energy was 224 ± 16 kJ/mol. These parameters substantiate the Gupta and Coble conclusion of a Zn²⁺ lattice diffusion mechanism. Additions of Bi₂O₃ to promote liquidphase sintering increased the ZnO grain size and the grain growth exponent to about 5, but reduced the apparent activation energy to about 150 kJ/mol, independent of Bi₂O₃ content. The preexponential term K ₀ was also independent of Bi₂O₃ content. It is concluded that the grain growth of ZnO in liquid-phase-sintered ZnO-Bi₂O₃ ceramics is controlled by the phase boundary reaction of the solid ZnO grains and the Bi₂O₃-rich liquid phase.     

Differences in Wetting Characteristics of Bi2O3 Polymorphs in ZnO Varistor Materials

Detailed analysis of the microstructure of grain boundaries, especially triple-grain and multiple-grain junctions, in ZnO varistor materials has been performed using transmission electron microscopy. Different polymorphs of Bi₂O₃ are shown to exhibit different wetting properties on ZnO interfaces. Recent investigations suggest that the equilibrium configuration consists of crystalline Bi₂O₃ in the triple-grain and multiple-grain junctions and an amorphous bismuth-rich film in the ZnO/ZnO grain boundaries. The present investigation supports this suggestion for δ-Bi₂O₃ and also adds to the microstructural image and wetting properties of α-Bi₂O₃.     

Microstructure of Varistors Prepared with Zinc Oxide Nanoparticles Coated with Bi2O3

Zinc oxide (ZnO) nanoparticles coated with 1–5 wt% Bi₂O₃ were prepared by precipitating a Bi(NO₃)₃ solution onto a ZnO precursor. Transmission electron microscopy showed that a homogeneous Bi₂O₃ layer coated the surface of the ZnO nanoparticles and that the ZnO particle size was ∼30–50 nm. Scanning electron microscopy showed that ZnO grains sintered at 1150°C were homogeneous in size and surrounded by a uniform Bi₂O₃ layer. When the ZnO grains were surrounded fully by Bi₂O₃ liquid phases, further increases in the ZnO grain size were not affected by the Bi₂O₃ content. This predesigned ZnO nanoparticle structure was shown to promote homogeneous ZnO grains with perfect crystal growth.     

Pore–Boundary Separation Behavior during Sintering of Pure and Bi2O3-Doped ZnO Ceramics

Pore–boundary separation in ZnO and 99.95ZnO·0.05Bi₂O₃ (in mol%) specimens during sintering at 1200°C was investigated. In pure ZnO specimens, pores were attached to the grain boundaries and disappeared during the final stage of sintering. In the Bi₂O₃-doped specimens, on the other hand, many pores were separated from the boundaries and trapped inside the grains. Observation using transmission electron microscopy showed that a thin layer of Bi₂O₃-rich phase existed at the boundaries in the Bi₂O₃-doped specimens. The pore separation in 99.95ZnO·0.05Bi₂O₃ specimens was explained in terms of the dihedral angle change and the high mobility of a liquid film boundary.     

Effects of Excess Bi2O3 on the Ferroelectric Behavior of Nd-Doped Bi4Ti3O12 Thin Films

Effects of excess Bi₂O₃ content on formation of (Bi_3.15Nd_0.85)Ti₃O₁₂ (BNT) films deposited by RF sputtering were investigated. The microstructures and electrical properties of BNT thin films are strongly dependent on the excess Bi₂O₃ content and post-sputtering annealing temperature, as examined by XRD, SEM, and P – E hysteresis loops. A small amount of excess bismuth improves the crystallinity and therefore polarization of BNT films, while too much excess bismuth leads to a reduction in polarization and an increase in coercive field. P – E loops of well-established squareness were observed for the BNT films derived from a moderate amount of Bi₂O₃ excess (5 mol%), where a remanent polarization 2P _r of 25.2 μC/cm² and 2E _c of 161.5 kV/cm were shown. A similar change in dielectric constant with increasing excess Bi₂O₃ content was also observed, with the highest dielectric constant of 304.1 being measured for the BNT film derived from 5 mol% excess Bi₂O₃.     

Temperature/Composition Phase Diagram of the System Bi2O3-PbO

The Bi₂O₃-PbO phase diagram was determined using differential thermal analysis and both room- and high-temperature X-ray powder diffraction. The phase diagram contains a single eutectic at 73 mol% PbO and 635°C. A body-centered cubic solid solution exists above ∼600°C within a composition range of 30 to 65 mol% PbO. The compounds α-Bi₂O₃, σ5-Bi₂O₃, and γ-PbO (litharge) have wide solubility ranges. Four compounds, 6Bi₂O₃·PbO, 3Bi₂O₃·2PbO, 4Bi₂O₃,5PbO, and Bi₂O₃·3PbO, are formed in this system and the previously unreported X-ray diffraction patterns of the latter three compounds are reported. Diffraction patterns for some of these mixed oxides have been observed in ZnO-based varistors grown using Bi₂O₃ and PbO as sintering aids.     

Properties and Structure of Glasses in the System Bi2O3-SiO2-GeO2

In the system Bi₂O₃-SiO₂-GeO₂, good glasses can be formed only from limited compositional regions consisting of 2 narrow strips along the lines x Bi₂O₃-(100-:t) GeO₂ ( x ≤40) and 40Bi₂O₃ y SiO₂ (60- y )GeO₂ (mol%); such glass is dark brown. Compositions from a large region (Bi₂O₃ content <40 mol%) showed immiscibility. In the binary system Bi₂O₃-GeO₂, density and refractive index vary linearly with composition (mol%). Negative deviations of molar volume from ideality suggest that the coordination of a significant number of Ge ions is changing from 4-fold to 6-fold. Thermal expansion and electrical resistivity data are also reported.     

Nature of Intergranular Phase in Nonohmic ZnO Ceramics Containing 0.5 Mol% Bi2O3

The intergranular phase obtained by sintering a binary mixture of ZnO + 0.5 mol% Bi₂O₃ was isolated by using a dilute solution of HCIO₄, which etches ZnO preferentially. The combined results of selected-area electron diffraction and microscopy, microprobe analysis, and X-ray diffraction strongly indicate that the intergranular material is a polycrystalline phase of tetragonal β-Bi₂O₃ ( P 42₁ c ), rather than the amorphous ZnO-Bi₂O₃ phase reported earlier. It appears that the nonohmic behavior in this prototype metal-oxide varistor must be an interfacial property associated with the semiconducting ZnO grains separated by thin layers of high-resistivity Bi₂O₃.     

Microstructure, Piezoelectric, and Ferroelectric Properties of Bi2O3-Added (K0.5Na0.5)NbO3 Lead-Free Ceramics

Lead-free piezoelectric (K_0.5Na_0.5)NbO₃– x wt% Bi₂O₃ ceramics have been synthesized by an ordinary sintering technique. The addition of Bi₂O₃ increases the melting point of the system and improves the sintering temperature of (K_0.5Na_0.5)NbO₃ ceramics. All samples show a pure perovskite phase with a typical orthorhombic symmetry when the Bi₂O₃ content <0.7 wt%. The phase transition temperature of orthorhombic–tetragonal ( T _{O − T} ) and tetragonal–cubic ( T _C) slightly decreased when a small amount of Bi₂O₃ was added. The remnant polarization P _r increased and the coercive field E _c decreased with increasing addition of Bi₂O₃. The piezoelectric properties of (K_0.5Na_0.5)NbO₃ ceramics increased when a small amount of Bi₂O₃ was added. The optimum piezoelectric properties are d ₃₃=140 pC/N, k _p=0.46, Q _m=167, and T _C=410°C for (K_0.5Na_0.5)NbO₃–0.5 wt% Bi₂O₃ ceramics.     

Phase Transformation and Densification Behavior of Microwave-Sintered Si3N4–Y2O3–MgO–ZrO2 System

A 2.45 GHz microwave-sintered Si₃N₄–Y₂O₃–MgO system containing various amounts of ZrO₂ secondary additives have been studied with respect to phase transformation and densification behavior. The temperature dependent dielectric properties were measured from 25°C to 1400°C using a conventional cavity perturbation technique. Phase transformation behavior was studied using X-ray diffractometry. Microwave sintered results were compared with those of conventional sintered results. It has been found that α to β phase transformation was completed at a lower temperature in microwave-sintered samples than those of the conventionally sintered samples. Density of the microwave-sintered samples increased up to 2.5 wt% of ZrO₂ addition and thereafter it showed a tendency to decrease or remain constant. The decrease in density is attributed to the pore generation caused by decomposition due to the localized over heating.     

Effects of Bismuth Sesquioxide on the Characteristics of ZnO Varistors

The nonlinearity of ZnO varistors is significantly influenced by the Bi₂O₃ and Sb₂O₃ contents, as well as by the phase composition of the Bi₂O₃. Degradation of the current-voltage characteristics due to the applied voltage is not always lowered by the β—γ transition of the Bi₂O₃ phase. Lattice parameter determinations and stress analyses suggest that the Bi₂O₃-rich phase in multigrain junctions causes mechanical strain at the grain boundary which may play an important role in the current-voltage characteristics of ZnO varistors.     

Microwave Dielectric Properties and Chemical Resistance of Low-Temperature-Sintered CaZrB2O6 Ceramics

Dolomite-type borate ceramics consisting of CaZrB₂O₆ were synthesized via a conventional solid-state reaction route; low-temperature sintering was explored using Bi₂O₃–CuO additives of 1–7 wt% for low-temperature co-fired ceramics applications. For several sintering temperatures, the microwave dielectric properties and chemical resistance of the ceramics were investigated. The CaZrB₂O₆ ceramics with 3 wt% Bi₂O₃–CuO addition could be sintered below 925°C, and the microwave dielectric properties of the low-temperature samples were ɛ_r=10.55, Q × f =87,350 GHz, and τ_f=+2 ppm/°C. The chemical resistance test result showed that both CaZrB₂O₆- and Bi₂O₃–CuO-added CaZrB₂O₆ ceramics were durable in basic solution but were degraded in acid solution.     

Electrical Properties of Superlattice-Structured Bi4Ti3O12–PbBi4Ti4O15 Single Crystals

Single crystals of superlattice-structured ferroelectrics composed of Bi₄Ti₃O₁₂ and PbBi₄Ti₄O₁₅ were grown and the properties of polarization hysteresis and leakage current along the a -axis were investigated. Oxidation treatment led to a marked increase in leakage current at room temperature, showing that electron hole acts as a detrimental carrier for electrical conduction. A well-developed polarization hysteresis with a remanent polarization of 41 μC/cm² was observed, which is suggested to originate from the peculiar ferroelectric displacement of Bi in the Bi₂O₂ layers.     

Low-Temperature Sintering, Densification, and Properties of Z-type Hexaferrite with Bi2O3 Additives

The effect of the addition of Bi₂O₃ on the densification, low-temperature sintering, and electromagnetic properties of Z-type planar hexaferrite was investigated. The results show that Bi₂O₃ additives can improve the densification and promote low-temperature sintering of Z-type hexaferrite prepared by a solid-state reaction method. The presence of Bi₂O₃ in the grain boundaries and the generation of Fe²⁺ degrade the initial permeability of the samples but make the quality factor and cut-off frequency increase. Various possible mechanisms involved in generating these effects were also discussed.     

Extended Defects in ZnO Ceramics Containing Bi4Ti3O12 Additive

Extended defects in ZnO ceramics containing, 6 wt% Bi₄Ti₃O₁₂ were studied by analytical electron microscopy. Apart from basal plane condensation stacking faults, which are also present in as-received ZnO, extended defects related to the presence of Bi₄Ti₃O₁₂ were observed. In samples sintered at 900°C they lie in the basal or in the prismatic     planes and they quite often form closed loops, whereas they form serpentine-shaped boundaries in samples sintered at 1200°C. Evidence is given that they are inversion boundaries. Their TEM image characteristics, as well as the unambiguous presence of Ti at the boundaries, suggest that they are formed due to the presence of 2-D coherent precipitates of Ti-rich (possibly Zn₂TiO₄-type spinel) phase.     

Nanopowder Preparation and Dielectric Properties of a Bi2O3–Nb2O5 Binary System Prepared by the High-Energy Ball-Milling Method

The high-energy ball-milling (HEM) method was used to synthesize the compositions of BiNbO₄, Bi₅Nb₃O₁₅, and Bi₃NbO₇ in a Bi₂O₃–Nb₂O₅ binary system. Reagent Bi₂O₃ and Nb₂O₅ were chosen as the starting materials. The X-ray diffraction patterns of the three compositions milled for different times were studied. Only the cubic Bi₃NbO₇ phase, Nb₂O₅, and amorphous matters were observed in powders after being milled for 10 h. After heating at proper temperatures the amorphous matters disappeared and the proleptic phases of BiNbO₄ and Bi₅Nb₃O₁₅ could be obtained. The Scherrer formula was used to calculate the crystal size and the results of nanopowders are between 10 and 20 nm. The scanning electron microscopy photos of Bi₃NbO₇ powders showed drastic aggregation, and the particle size was about 100 nm. The dielectric properties of ceramics sintered from the nanopowders prepared by HEM at 100–1 MHz and the microwave region were measured. Bi₃NbO₇ ceramics showed a good microwave permittivity ɛ_r of about 80 and a Q × f of about 300 at 5 GHz. The triclinic phase of BiNbO₄ ceramics reached its best properties with ɛ_r=24 and Q × f =14 000 GHz at about 8 GHz.