一种用于DC-DC的双模控制功率管分段驱动电路

提出了一种用于DC-DC的双模控制功率管分段驱动电路。该电路通过检测负载电流的变化,优化功率管大小,从而提高转换效率;提出根据负载电流大小自动切换至PSM控制模式的解决方案,进一步提高极轻负载下的效率。电路基于标准0.13 μm CMOS工艺进行设计与仿真,仿真结果表明,与传统不分段DC-DC变换器相比,提出的双模控制分段驱动电路在15 mA负载时效率提升5.3%。     

用于反激式变换器的BJT功率管驱动电路的设计

为反激式变换器BJT功率管设计了一种驱动电路。针对电流镜复制的精确度,设计了运放、MOS管组成的深度负反馈环路和共源共栅结构对电路进行钳位,使电流精确复制到功率管基极;针对BJT管较慢的开关速度,配合数字控制,缩短功率管状态转换所需时间,降低了功率管损耗。在CSMC 18μm 18 V工艺下,利用Hspice软件进行仿真,结果表明,BJT功率管工作在饱和区,开关转换速度增强,满足了反激式变换器对BJT功率管开关速度的要求。     

一种用于高压开关电源的高精度电流采样电路

设计了一种用于高压Boost电路的电流采样电路。利用SenseFET采样原理,设计了高增益、大带宽的源极输入共源共栅运放,保证了采样电路的高采样精度和快响应速度。设计了延时单元,只在功率管开启时起作用,在功率管关断时无效,保证采样结构在功率管开启时不偏离工作点,并能消除此时的采样输出电流尖峰。在0.35 μm 40 V BCD工艺下对电路进行仿真验证。结果显示,该采样电路的采样精度可达到99.64%,且采样电流尖峰明显降低。     

降压型PWM DC/DC中的峰值电流环电路的设计

设计了一种用于PWM降压型DC/DC的峰值电流环电路,详细地阐述了电路工作原理以及相关计算公式,设计了与之配套的功率管MOSFET的版图布局布线。该电流检测与信号放大电路结构简单,比传统的设计更精确地反映了峰值电流的大小。仿真结果表明,电路的电源调整率达到0.1%;在较大的电源范围内(4.75V~15V)增益保持不变。     

一款电流型控制的DC／DC降压转换器

本文提出一种新型电感电流检测电路,该检测电路不需要一个放大器作为电压镜像,从而使用的器件更少,功耗更低。该电感电流检测电路应用于DC／DC降压转换器,采用CSM 0．18μm CMOS工艺进行设计和仿真,仿真结果显示该电感电流检测电路的精度可达到96％,输出电压的纹波仅为1mV。     

一种USB电源开关的设计

设计了一种低导通损耗的USB电源开关电路。该电路采用自举电荷泵为N型功率管提供足够高的栅压，以降低USB开关的导通损耗。在过载情况下，过流保护电路能将输出电流限制在0．3A。     

D类音频功放过流保护电路的设计

本文设计了一种D类音频功放的过流保护电路。通过和功率管同类型,缩小尺寸的采样管监测流过功率管电流的大小,因此在高侧功率管和低侧功率管过流时,使用一个基准电压值和一个比较器就可以完成过流检测及保护功能,有效降低了过流保护电路的功耗和版图面积。栅驱动电路通过一个自举电容不仅为高侧功率管及采样管的开启提供足够的驱动电压,还为过流保护电路提供选择控制信号,交替检测高低侧功率管的过流情况。过流保护电路采用耐高压结构,保证D类音频功放大功率输出时正常工作。     

应用于前端读出电路的片上LDO设计

为满足辐射探测器前端读出电路对模拟电路稳压器片上集成和快速瞬态时间响应的需求,设计了一种基于0.18μm CMOS工艺的全片上集成LDO。采用大摆幅高增益放大器驱动输出功率管,增大了功率管栅极调节电压摆幅,减小了功率管尺寸和LDO压差电压。该放大器同时增大了LDO的环路增益和对功率管栅极的充放电电流,从而改善了瞬态响应性能。为了不牺牲环路增益带宽和芯片面积,并且保证LDO在整个负载电流区间内保持稳定,提出了一种负载电流分区频率补偿方法。仿真结果表明,在负载电容为200 nF,负载电流范围为0～200 mA时,设计的LDO相位裕度均大于53^o。在相同功率管尺寸情况下,采用大摆幅高增益放大器可以将LDO最大输出电流能力提高到两倍以上。当负载电流从10 mA跳变到200 mA时,LDO输出电压恢复时间小于6.5μs。设计的LDO电路面积为120μm×264μm,满载时电源效率为97.76%,最小压差电压为50 mV。     

大电流，微功耗，小体积单片LDO的设计与实现

以设计输出电流为700 mA,静态电流为50μA,芯片面积为1.5 mm×2.0 mm的LDO线性稳压器为目标,提出的LDO电路利用基准电路的输出直接作为芯片的输出,用基准电路所固有的跨导放大器对输出进行检测并反馈至单级放大器,放大后输出至功率管的基极,控制功率管输出额定的电压和电流。无需冗余的误差放大器,使得环路补偿极为简单,不存在传统LDO的补偿难题。在电路上把传统LDO电路所需各个模块的功能糅合到了一个较为简单的电路中,大大减小了芯片面积,并且减小了静态电流。对电路进行了仿真分析并采用2μm 36 V Bipolar工艺生产实现,流片后的测试结果表明该芯片实现了大电流,微功耗,小体积的特性。     

大功率LED驱动电路设计与仿真

本文设计了一款高效率,高输入电压,输出电流恒定的大功率白光LED驱动芯片。设计了芯片中的运算放大器电路、带隙基准电路、锯齿波发生器电路、比较器电路、误差放大器电路、输出过压保护电路、过热保护电路、功率管驱动电路、逻辑控制电路等,并给出了仿真结果。仿真结果表明设计的芯片达到了预期的要求。     

Lossless average inductor current sensor for CMOS integrated DC–DC converters operating at high frequencies

A novel average inductor current sensing circuit integrable in CMOS technologies is presented. It is designed for DC–DC converters using buck, boost, or buck-boost topologies and operating in continuous conduction mode at high switching frequencies. The average inductor current value is used by the DC–DC controllers to increase the light load power conversion efficiency (e.g., selection of the modulation mode, selection of the dynamic width of the transistors). It can also be used to perform the constant current charging phase when charging lithium-ion batteries, or to simply detect overcurrent faults. The proposed average inductor current sensing method is based on the lossless sensing MOSFET principle widely used in monolithic CMOS integrated DC–DC converters for measuring the current flowing through the power switches. It consists of taking a sample of the current flowing through the power switches at a specific point in time during each energizing and de-energizing cycle of the inductor. By controlling precisely the point in time at which this sample is taken, the average inductor current value can be sensed directly. The circuit simulations were done with the Cadence Spectre simulator. The improvements compared to the basic sensing MOSFET principle are a lower power consumption because no high bandwidth amplifier is required, and less noise emission because the sensing MOSFET is no more switched. Additionally, the novel average inductor current sensing circuit overcomes the low bandwidth limitation previously associated with the sensing MOSFET principle, thus enabling it to be used in DC–DC converters operating at switching frequencies up to 10 MHz and above.     

一种BUCK型开关稳压器负载电流检测电路

针对Buck型开关稳压器的断续工作模式(DCM),基于CSMC0.5μm CMOS工艺设计实现了一种新颖的负载电流检测电路。同传统的电感电流采样方式不同,该结构直接应用与负载电流变化几乎同步的同步管栅极驱动信号作为"电流采样"信号,实现了负载平均电流的检测。经投片验证,提出的电流检测电路工作良好,且面积仅占芯片的1.5%,同传统采样方式相比,面积减小了21%,静态时的耗电仅为原来的40%。     

MAGFET based current sensing for power integrated circuit

A new on-chip non-invasive integrated current sensing, compatible with standard CMOS technology, has been developed, using a 1.2 μm BiCMOS ALCATEL technology, to sense the current in the drain side of a power MOSFET. The circuit is based on a split-drain magnetic sensor, implemented on the same chip of an integrated gate driver for a power MOSFET. A CMOS biasing circuit with a differential current output is also developed. The simulation results of the current sensing show a conversion gain of 1.25 mV/mT.     

Online calibration of MOSFET on-state resistance for precise current sensing

An approach for online current sensing calibration is presented where an auxiliary switch and a precision sense resistor are connected in parallel with a main power switch to achieve accuracy comparable to the sense resistor method, together with the advantage of essentially no additional power loss. The proposed current-sensing circuit and the calibration methods are particularly well suited for digital controller implementations where the required control and calibration functions can be easily accomplished. Experimental results with a digitally controlled 1.5-V 15-A synchronous buck converter demonstrate functionality of the online calibration approach, showing a significant improvement in accuracy over voltage sensing across the power MOSFET on-resistance.     

一种新型低电压极限电流检测电路

为磁滞电流控制的DC-DC开关稳压器设计了一种新型的极限电流检测器。该电路不借助于专门的电流检测电路,只使用一个检测MOSFET和一个电压比较器来实现极限电流检测,减小了电路的复杂度。针对电流检测器的要求,设计了一种低电源电压、高共模电压的比较器。使用TSMC 0.18μm CMOS混合信号工艺,对电路进行设计。结果表明,电路具有很好的容差特性,并且电路可工作在1.2 V的低电源电压下。     

灵巧功率集成电路中功率MOSFET电流感知方法的研究

功率器件的过流保护是提高灵巧功率集成电路可靠性的关键,采用不同的电流检测方法会有不同的误差。通过对功率MOSFET的电流检测技术的研究,对比分析了几种常用的电流感知方法,重点阐述了应用在灵巧功率集成电路中感知高压功率器件电流的SenseFET结构的工作原理,并分析了影响电流检测准确度的误差源。可以为设计高性能的电流检测过程提供参考。     

一种基于DC/DC变换器的LED驱动电路的设计

提出一种基于电流模式DC/DC变换器的驱动控制电路。该电路可以与恒流电路结合在一起,用作LED驱动。电路由误差放大器、斜坡信号产生电路、电流采样与叠加电路以及PWM比较器四部分构成。采用华虹BCD350工艺进行仿真验证,结果显示,电路成功实现了电流采样信号与斜坡补偿信号的叠加,在Vea信号的控制下,输出了控制功率管关断的PWM脉冲信号。     

一种适用于Buck型DC/DC变换器的高精度片上电流采样电路

电流采样电路作为电流控制的DC/DC变换器重要组成部件之一,其精度和响应速度已受到越来越高的重视.提出的电流采样电路没有使用运算放大器,简化了电路结构,降低了功耗.同时,电路中引入的补偿电流进一步提高了采样的精度.基于0.5μm CMOS工艺实现该电路,HSPICE模拟仿真结果表明该电路具有较高的采样精度,最高可达99.9%,且在负载、输入电压、温度变化时,采样精度波动很小.     

Design and research of an LED driving circuit with accurate proportional current sampling mode

An LED driving circuit in accurate proportional current sampling mode is designed and fabricated based on CSMC 0.5 μm standard CMOS technology. It realizes accurate sensing of sampling current variation with output driving current. A better constant output current characteristic is achieved by using an amplifier to clamp the drain voltage of both the sampling MOSFET and power MOSFET to the same value with feedback control. Small signal equivalent circuit analysis shows that the small signal output resistance in the accurate proportional current sampling mode circuit is much larger than that in a traditional proportional current sampling mode circuit, and circuit stability could be assured. Circuit simulation and chip testing results show that when the LED driving current is 350 mA and the power supply is 6 V with ±10% variation, the stability of the output constant current of the accurate proportional current sampling mode LED driving 1C will show 41% improvement over that of a traditional proportional current sampling mode LED driving IC.     

一种基于高压工艺的高精度电流采样电路

提出了一种用于大功率LED驱动芯片中的电流采样电路。采用电阻采样技术,运用高压、高增益、大带宽的运放,使采样电路具有高精度和快的响应速度。基于0.8μm 40 V BCD工艺,对提出的电流采样电路进行仿真验证。结果表明,在大功率应用下,该采样电路的采样精度高达99.68%,有很好的实用价值。