共查询到20条相似文献,搜索用时 93 毫秒
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报道了蓝宝石衬底上AlGaN/GaNHFET的制备以及室温下器件的性能。器件栅长为0.8μm,源漏间距为3μm,得到器件的最大漏电流密度为0.7A/mm,最大跨导为242.4mS/mm,截止频率(fT)和最高振荡频率(fmax)分别为45GHz和100GHz。同时器件的脉冲测试结果显示,SiN钝化对大栅宽器件的电流崩塌效应不能彻底消除。 相似文献
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报道了在当照下具有高跨导值的1μm栅Al0.15Ga0.85N/GaN异质结构场效应晶体管,解释了光照下器件跨导和电流的增加是由于沟道中产生的俘获正电荷和导电子造成的。 相似文献
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一种高增益的CMOS差分跨导放大器 总被引:3,自引:0,他引:3
本文设计了一种可用于∑△A/D转换器的全差分跨导放大器(OTA)。本放大器采用0.6μm工艺实现,其两级间使用共源共栅补偿、并采用了动态共模反馈,其标定动态范围(DR)为82.8dB、开环直流增益为90.9dB,在最坏情况下需要84.3ns以稳定到0.1%的精度。 相似文献
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电突触前膜在高于阈值的刺激下,产生一个大小不变的动作电位,突触后细胞可直接被突触前轴突中伴随动作电位产生的电紧张所激活,突触膜相当于整流器,电流只能从突触前神经元流向突触后神经元。电流流过神经元之间结合部时,连结电导将随时间变化。 相似文献
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C波段4W砷化镓功率场效应晶体管 总被引:1,自引:1,他引:0
介绍了C波段4W砷化镓功率场效应晶体管的设计考虑、器件结构和制作,讨论了所采用的一些新工艺,给出器件性能。在5.3GHZ下,器件1dB压缩点的输出功率≥4W,增益为6.5~7.5dB,功率附加效率≥35%。这种FET的多芯片运用具有优良的功率合成效率。 相似文献
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本文叙述了S波段振荡用大功率GaAs FET的设计考虑、结构和制作,给出了器件性能。在3GHz下,器件振荡输出功率为3.34W,直流—射频转换效率为47.4%。 相似文献
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介绍了GaAs大功率器件内匹配技术的基本原理,包括匹配电路原理、内匹配元件的参数计算方法等.以C波段40 W大功率器件为例讲述了内匹配技术在GaAs功率器件设计中的应用.通过大信号建模获得大栅宽器件模型,通过ADS软件进行内匹配电路参数的优化计算.通过电路制作及调试,实现了大功率器件的性能.经测试,当器件Vds=9 V时,在5.2~5.8 GHz频段内,输出功率Po≥40 W,功率增益Gp≥9 dB.测量值和设计值基本吻合. 相似文献
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In the ultra-thin relaxed SiGe virtual substrates, a strained-Si channel p-type Metal Oxide Semiconductor Field Effect Transistor (p-MOSFET) is presented. Built on strained-Si/240nm relaxed-Si0.8 Ge0.2/ 100nm Low Temperature Si (LT-Si)/10nm Si buffer was grown by Molecular Beam Epitaxy (MBE), in which LT-Si layer is used to release stress of the SiGe layer and made it relaxed. Measurement indicates that the strained-Si p-MOSFET's (L=4.2μm) transconductance and the hole mobility are enhanced 30% and 50% respectively, compared with that of conventional bulk-Si. The maximum hole mobility for strained-Si device is 140cm2/Vs. The device performance is comparable to devices achieved on several μm thick composition graded buffers and relaxed-SiGe layer virtual substrates. 相似文献
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陈堂胜 《固体电子学研究与进展》2008,28(3)
采用射频最大饱和漏电流和射频击穿电压解释了影响GaAs微波功率FET功率特性的主要因素,GaAs FET栅漏间半导体表面负电荷的积累在引起器件电流偏移的同时还导致器件微波功率特性的退化,GaAs微波功率FET的可靠性和功率特性相互关联,高可靠的GaAs微波功率FET一定具有高性能的功率特性。在器件工艺中对表面态密度和陷阱能级密度严格控制是实现GaAs微波功率FET的高功率特性和高可靠性的关键。 相似文献
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Mehdi Bagherizadeh Mohammad Hossein Moaiyeri Mohammad Eshghi 《International Journal of Electronics》2019,106(6):912-927
This study presents a high-speed and energy-efficient 5-to-2 compressor cell using Carbon Nanotube Field Effect Transistors (CNFETs). For designing this circuit, the unique features of CNFETs such as the ability of adopting the required threshold voltage by changing the diameters of nanotubes and same carrier mobility for p-type and n-type devices are utilized. Compressors are the fundamental components in many important applications such as accumulating the partial products in multipliers. To evaluate the performance of the designs, simulations are carried out using HSPICE at different power supplies, load capacitors, frequencies. The simulation results demonstrate 56% improvement in delay, 46% improvement in power, and 67% improvement in power-delay-product (PDP) in average as compared to the classical and state-of-the-art 5-to-2 compressor cells presented in the literature. 相似文献
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Bongki Mheen Young-Joo Song Jin-Young Kang Kyu-Hwan Shim Songcheol Hong 《Materials Science in Semiconductor Processing》2004,7(4-6):375
As a boron diffusion barrier, a 20 nm-thick Si0.8Ge0.2 layer was successfully utilized in n-channel MOSFETs for implementing a retrograded well structure. Compared with the conventional Si CMOS process, the developed n-channel MOSFET process provides an enhanced transconductance (7%) and lower sub-threshold swing which is nearly unchanged even at an increased drain-source voltage. Especially, because sub-threshold leakage current is one of the key issues in the MOS device scaling due to reduced threshold voltage, the usage of a Si0.8Ge0.2 layer in n-channel MOSFET was verified to be useful for low power and high performance even under aggressive scaling constraints. 相似文献
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随着器件工作频率的升高,以集总元件模型描述大栅宽功率器件引入的误差将越来越大,且这一趋势随着栅长的减小更加显著。对微波大栅宽功率器件的分布性作了初步研究,对传统建模和器件优化方法进行改进,将器件中的有源部分和无源部分分离开,利用微波传输线理论和奇偶模分析对器件的无源部分建模,在满足集总条件时对有源区建模,将两者综合建立了分段的线性模型。与测量结果进行了比较,表明分段模型取得了更为精确的结果;在此基础上又建立了分段的非线性模型,模拟和验证了大栅宽器件的早期非线性现象;最后还提出了功率器件栅宽优化设计的估算方法。 相似文献
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