脉冲激光薄膜制备技术

脉冲激光薄膜沉积是近年来受到普遍关注的制膜新技术。简要介绍了脉冲激光薄膜沉积技术的物理原理、独具的特点和研究发展动态,并介绍了采用脉冲激光薄膜沉积技术制备硅基纳米PtSi薄膜的结果     

脉冲激光沉积(PLD)的研究动态与新发展

介绍了脉冲激光沉积薄膜技术的原理、特点,详细探讨了脉冲激光沉积的研究动态和发展趋势.大量研究表明,PLD技术是目前制备薄膜的最好方法之一.     

脉冲激光沉积有机薄膜

脉冲激光沉积(PLD)技术是一门新兴的薄膜制备技术,在无机薄膜的制备和研究方面取得了令人满意的成果,技术也比较成熟.但利用脉冲激光沉积技术制备和研究有机膜方面的工作开展较晚,工作也比较少,尚未形成一个比较系统的体系.因此开展有机薄膜的脉冲激光沉积研究将具有重要的意义.     

微锂电池用LiCoO2薄膜研究进展

本文简述了LiCoO2在粉体和薄膜中晶体结构与电化学性能；详细介绍了钴酸锂薄膜的制备方法并评述了不同合成方法、制备条件对钴酸锂薄膜结合强度、结构、形貌及电化学性能的影响，指出脉冲激光沉积法是一项值得深入研究的钴酸锂薄膜制备技术。     

脉冲激光沉积法制备VO_2热致变色薄膜研究进展

基于半导体和金属间的相变特性,伴随着温度、电场、压力的变化,具有相关智能特性的VO_2薄膜材料具有较大的应用潜力.本文主要阐述脉冲激光沉积技术在制备金属氧化物方面的物理过程和技术特点,详细介绍脉冲激光沉积制备VO_2薄膜材料的工艺参数和国内外研究进展,并与几种常规制备方法进行对比,给出脉冲激光沉积掺杂对VO_2薄膜材料特性的影响,以及采用脉冲激光沉积制备VO_2纳米材料,讨论了脉冲激光沉积制备具有智能特性的VO_2薄膜材料存在的问题和发展方向.     

大功率脉冲激光纳米薄膜制备技术

讨论脉冲激光薄膜沉积技术的基本物理过程，独具的优点及可能的应用，并介绍了一些激光制备薄膜实验的结果。     

大功率脉冲激光纳米薄膜制备技术

讨论脉冲激光薄膜沉积技术的基本物理过程、独具的优点及可能的应用，并介绍了一些激光制备薄膜实验的结果。     

尖晶石铁酸盐薄膜制备技术研究进展

综述了近年来尖晶石铁酸盐薄膜制备技术领域的一些研究进展,重点介绍了脉冲激光沉积法、磁控溅射法、喷雾热解法、溶胶-凝胶法、铁酸盐化学镀、水热合成技术、电化学沉积法等方法的原理和技术特点,比较了各种方法的异同点,提出了尖晶石铁酸盐薄膜制备技术的进一步发展趋势.     

ZnO薄膜气相法制备

ZnO薄膜具有压电、光电、压敏、气敏、发光等多种特性,应用十分广泛。介绍了ZnO薄膜气相法制备原理中的各类主要方法,包括脉冲激光沉积、磁控溅射、分子束外延、金属有机化合物化学气相沉积、单源化学气相沉积和等离子体增强化学气相沉积等技术;分析了这些方法的优缺点;展望了ZnO薄膜今后的研究方向。     

物理气相沉积制备锂离子电池正极薄膜研究进展

薄膜锂离子电池是锂离子电池发展的最新领域,正极材料的薄膜化是薄膜锂离子电池的重要部分.综述了近年来国内外物理气相沉积在薄膜锂离子电池正极薄膜方面的研究新进展,着重介绍了射频磁控溅射、脉冲激光沉积、电子束沉积等制备技术的工作原理、特点及发展,并对这些制备技术在锂离子电池正极薄膜制备中的应用进行了分析、比较和评价.     

脉冲激光沉积技术在磁性薄膜制备中的应用

脉冲激光沉积制膜（PLD）是近年来迅速发展起来的制膜新技术，首先简要介绍了脉冲激光沉积技术的原理、特点和优势以及在磁性功能薄膜研究中的应用，最后说明了该技术的最新发展趋势。     

Shadowed Off-Axis Pulsed Laser Deposition of YBa2Cu3O7−x Thin Films

Using a shadowed pulsed laser deposition allows us to reduce the number of droplets on the YBa₂Cu₃O_7?x film surface obtained by pulsed laser deposition method. In this study, we present a new modification of pulsed laser deposition method: a shadowed off-axis pulsed laser deposition. The substrate surface lies in the plain defined by the laser beam. A rectangular shadow mask located between target and substrate reduce the quantity of large particles deposited from the diffusion flow. Such geometry allows us to carry out the laser plume scanning on the target surface for simultaneous one-step double-sided deposition films with a droplet-free surface. Both films had good superconducting properties.     

Shadowed Off-Axis Pulsed Laser Deposition of YBa2Cu3O7?x Thin Films

Using a shadowed pulsed laser deposition allows us to reduce the number of droplets on the YBa₂Cu₃O_7–x film surface obtained by pulsed laser deposition method. In this study, we present a new modification of pulsed laser deposition method: a shadowed off-axis pulsed laser deposition. The substrate surface lies in the plain defined by the laser beam. A rectangular shadow mask located between target and substrate reduce the quantity of large particles deposited from the diffusion flow. Such geometry allows us to carry out the laser plume scanning on the target surface for simultaneous one-step double-sided deposition films with a droplet-free surface. Both films had good superconducting properties.     

Growth of doped silicon nanowires by pulsed laser deposition and their analysis by electron beam induced current imaging

Doped silicon nanowires (NWs) were epitaxially grown on silicon substrates by pulsed laser deposition following a vapour-liquid-solid process, in which dopants together with silicon atoms were introduced into the gas phase by laser ablation of lightly and highly doped silicon target material. p-n or p(++)-p junctions located at the NW-silicon substrate interfaces were thus realized. To detect these junctions and visualize them the electron beam induced current technique and two-point probe current-voltage measurements were used, based on nanoprobing individual silicon NWs in a scanning electron microscope. Successful silicon NW doping by pulsed laser deposition of doped target material could experimentally be demonstrated. This doping strategy compared to the commonly used doping from the gas phase during chemical vapour deposition is evaluated essentially with a view to potentially overcoming the limitations of chemical vapour deposition doping, which shows doping inhomogeneities between the top and bottom of the NW as well as between the core and shell of NWs and structural lattice defects, especially when high doping levels are envisaged. The pulsed laser deposition doping technique yields homogeneously doped NWs and the doping level can be controlled by the choice of the target material. As a further benefit, this doping procedure does not require the use of poisonous gases and may be applied to grow not only silicon NWs but also other kinds of doped semiconductor NWs, e.g. group III nitrides or arsenides.     

Superhard tungsten tetraboride films prepared by pulsed laser deposition method

Attempts to synthesize and/or theoretically predict new superhard materials are the subject of an intense research activity. The trials to deposit them in the form of films have just began. WB(2) (77 wt % WB(2) and 23 wt % WB(4)) and WB(4) (65 wt % WB(4) and 35 wt % WB(2)) polycrystalline bulk samples were obtained in this work via electron beam synthesis technique and, subsequently, used as targets for films preparation by the pulsed laser deposition method. The targets were irradiated by a frequency-doubled Nd:glass laser with a pulse duration of 250 fs. The films grown on SiO(2) substrates at 600 °C were characterized by X-ray diffraction, scanning electron and atomic force microscopies, and Vickers microhardness technique. The deposited films are composed of WB(4). The intrinsic film hardness, calculated according to the "law-of-mixtures" model, lies in the superhardness region 42-50 GPa.     

LASER PROCESSING OF HIGH TEMPERATURE SUPERCONDUCTING THIN FILMS

High quality thin films of high temperature superconductors (HTS) have been fabricated using pulsed or cw lasers as physical vapor deposition sources. There is current interest in scaling the pulsed laser deposition (PLD) technique to coat 3-in. wafers with HTS. Process control and diagnostics relevant to achieving the required scaling and reproducibility will be reviewed.     

ZnO薄膜的择优取向生长

ZnO薄膜是一种具有广泛用途的材料,近来成为了研究的热点.高度c轴择优取向是优质ZnO薄膜的重要特点.在已开发的众多生长技术中,磁控溅射、金属有机物气相沉积、脉冲激光沉积、分子束外延、电子束反应蒸镀法是生长出高度c轴择优取向优质薄膜的主要方法.介绍了这些方法及其研究进展,同时介绍了目前ZnO薄膜主要研究方面.