Nowotny phase Mo3+2xSi3C0.6 dispersed in a porous SiC/C matrix: A novel catalyst for hydrogen evolution reaction

The ternary Nowotny phase (NP), with a composition Mo_3+2xSi₃C_0.6 (x = 0.9-0.764), is found to be catalytically active in the field of electrochemical water splitting. The NP embedded in a porous SiC/C nanocomposite matrix is synthesized via a single-source-precursor approach which involves the reaction of allylhydridopolycarbosilane with MoO₂(acac)₂. Thermal treatment of the single-source-precursor up to 1400°C in a protective atmosphere results in the in situ formation of nanocrystalline Mo_3+2xSi₃C_0.6 immobilized in a thermally and corrosion-stable SiC/C matrix. The weight fractions of the observed crystalline phases Mo_3+2xSi₃C_0.6 and SiC amount to ca. 28 (26) and 72 (74) wt%, respectively, when prepared at 1400°C (1350°C). The porosity of the formed nanocomposite is adjusted by the addition of polystyrene (PS) as a pore former to the single-source-precursor resulting in a specific surface area up to 206 m²/g. The electrocatalytic activity of the Mo_3+2xSi₃C_0.6/C/SiC nanocomposite with respect to the hydrogen evolution reaction (HER) is characterized by low over potentials of 22 and 138 mV vs reversible hydrogen electrode (RHE) for applying 1 and 10 mA cm⁻² of current density, respectively. The analyzed electrocatalytic performance exceeds that of most Mo-based electrocatalysts and shows high stability (over 90%) during 35 hours.     

Effect of Si3N4 Addition on Compressive Creep Behavior of Hot‐Pressed ZrB2–SiC Composites

Compressive creep studies have been carried out on hot‐pressed ZrB₂–SiC (ZS) and ZrB₂–SiC–Si₃N₄ (ZSS) composites in air under stress and temperature ranges of 93–140 MPa and 1300°C–1425°C, respectively for time durations of ≈20–40 h. The results of these studies have shown the creep resistance of ZS composite to be greater than that of ZSS. As the temperature is increased from 1300°C to 1425°C, the stress exponent of ZS decreases from 1.7 to 1.1, whereas that of ZSS drops from 1.6 to 0.6. The activation energies for these composites have been found as ≈95 ± 32 kJ/mol at temperatures ≤1350°C, and as ≈470 ± 20 kJ/mol in the range of 1350°C–1425°C. Studies of the postcreep microstructures using scanning and transmission electron microscopy have shown the presence of glassy film with cracks at both ZrB₂ grain boundaries and ZrB₂–SiC interfaces. These results along with calculated values of activation volumes suggest grain‐boundary sliding as the major damage mechanism, which is controlled by O^2? diffusion through SiO₂ at ≤1350°C, and by viscoplastic flow of the glassy interfacial film at temperatures ≥1350°C. Studies by transmission electron microscopy have shown formation of crystalline precipitates of Si₂N₂O near ZrB₂–SiC interfaces in ZSS tested at ≥1400°C, which along with stress exponent values <1 suggests that grain‐boundary sliding involving solution‐precipitation‐type mechanism is operative at these temperatures.     

Ultrafast low-temperature near-seamless joining of Cf/SiC using a sacrificial Pr3Si2C2 filler via electric current field-assisted sintering technique

A novel layered structure material, Pr₃Si₂C₂, was synthesized at a low temperature of 850 °C using a molten salt approach for the first time, and subsequently used as the joining filler for carbon fibers reinforced SiC composites (C_f/SiC). A robust near-seamless C_f/SiC joint was successfully obtained at 1509 °C (T_i) for 30 s, while an ultrafast heating rate of 6000 °C/min was applied via electric field-assisted sintering technology. The near-seamless joining process was attributed to the newly precipitated SiC grains, which were densified well with the C_f/SiC matrix by liquid-assisted sintering. The liquid phase was in-situ formed by the eutectic reaction between Pr₃Si₂C₂ and SiC. The shear strength of the near-seamless joint obtained at 1509 °C for 30 s was 17.6 ± 3.0 MPa. The failure occurred in the C_f/SiC matrix. The formation of near-seamless C_f/SiC joints dismisses the issues related to thermal mismatch between C_f/SiC matrices and traditional joining fillers.     

High-temperature electromagnetic wave absorption properties of Cf/SiCNFs/Si3N4 composites

Carbon fibers reinforced Si₃N₄ composites with SiC nanofiber interphase (C_f/SiCNFs/Si₃N₄) were prepared by combining catalysis chemical vapor deposition and gel-casting process. Microstructures, mechanical properties, and electromagnetic wave absorption properties within X-band at 25°C-800°C of C_f/SiCNFs/Si₃N₄ composites were investigated. Results show that SiC nanofibers are combined well with Si₃N₄ matrix and carbon fibers, the fracture toughness is thus increased more than double from 3.51 MPa·m^1/2 of the Si₃N₄ ceramic to 7.23 MPa·m^1/2 of the as-prepared composites. As the temperature increases from 25°C to 800°C, C_f/SiCNFs/Si₃N₄ composites show a temperature-dependent complex permittivity, attenuation constant, and impedance. The relatively high attenuation capability of C_f/SiCNFs/Si₃N₄ composites at elevated temperature results in a great minimum reflection loss of −20.3 dB at 800°C with a thin thickness of 2.0 mm. The superior electromagnetic wave absorption performance mainly originates from conductive loss, multi-reflection, and strong polarization formed by the combined effects of carbon fibers and SiC nanofibers.     

Si/B/C/N/Al precursor-derived ceramics: Synthesis,high temperature behaviour and oxidation resistance

The Si/B/C/N/H polymer T2(1), [B(C₂H₄Si(CH₃)NH)₃]_n, was reacted with different amounts of H₃Al·NMe₃ to produce three organometallic precursors for Si/B/C/N/Al ceramics. These precursors were transformed into ceramic materials by thermolysis at 1400 °C. The ceramic yield varied from 63% for the Al-poor polymer (3.6 wt.% Al) to 71% for the Al-rich precursor (9.2 wt.% Al). The as-thermolysed ceramics contained nano-sized SiC crystals. Heat treatment at 1800 °C led to the formation of a microstructure composed of crystalline SiC, Si₃N₄, AlN(+SiC) and a BNC_x phase. At 2000 °C, nitrogen-containing phases (partly) decomposed in a nitrogen or argon atmosphere. The high temperature stability was not clearly related to the aluminium concentration within the samples. The oxidation behaviour was analysed at 1100, 1300, and 1500 °C. The addition of aluminium significantly improved the oxide scale quality with respect to adhesion, cracking and bubble formation compared to Al-free Si(/B)/C/N ceramics. Scale growth rates on Si/B/C/N/Al ceramics at 1500 °C were comparable with CVD–SiC and CVD–Si₃N₄, which makes these materials promising candidates for high-temperature applications in oxidizing environments.     

A novel combination of precursor pyrolysis assisted sintering and rapid sintering for construction of multi-composition coatings to improve ablation resistance of SiOC ceramic modified carbon fiber needled felt preform composites

A double-layer coating composed of MoSi₂–SiO₂–SiC/ZrB₂–MoSi₂–SiC was designed and successfully constructed by a novel combination of precursor pyrolysis assisted sintering and rapid sintering to improve the ablation resistance of SiOC ceramic modified carbon fiber needled felt preform composites (CSs). The ZrB₂–MoSi₂–SiC inner layer coating was in relatively uniform distribution in the zone of 0–3 mm from the surface of CSs through the slurry/precursor infiltration in vacuum and SiOC precursor pyrolysis assisted sintering, which played a predominant role in improving oxidation and ablation resistance and maintaining the morphology of CSs. The MoSi₂–SiO₂–SiC outer layer coating was prepared by the spray and rapid sintering to further protect CSs from high-temperature oxidation. The ablation resistance of CSs coated with double-layer coating was evaluated by an oxygen-acetylene ablation test under the temperature of 1600–1800 °C with different ablation time of 1000 and 1500 s. The results revealed that the mass recession rates increased with the rise of ablation temperature and extension of ablation time, ranging from 0.47 g/(m²·s) to 0.98 g/(m²·s) at 1600–1800 °C for 1000 s and from 0.72 g/(m²·s) to 0.86 g/(m²·s) for 1000–1500 s at 1700 °C, while the linear recession rates showed negative values at 1700 °C due to the formation of oxides, such as SiO₂ and ZrO₂. The ablation mechanism of the double-layer coating was analyzed and found that a SiO₂–ZrO₂–Mo_4.8Si₃C_0.6 oxidation protection barrier would be formed during the ablation process to prevent the oxygen diffusion into the interior CSs, and this study provided a novel and effective way to fabricate high-temperature oxidation protective and ablation resistant coating.     

Effect of SiC whiskers on the anti-oxidation properties of Yb2Si2O7/mullite/SiC tri-layer environmental barrier coating for CMCs

The mullite and ytterbium disilicate (β-Yb₂Si₂O₇) powders as starting materials for the Yb₂Si₂O₇/mullite/SiC tri-layer coating are synthesized by a sol–gel method. The effect of SiC whiskers on the anti-oxidation properties of Yb₂Si₂O₇/mullite/SiC tri-layer coating for C/SiC composites in the air environment is deeply studied. Results show that the formation temperature and complete transition temperature of mullite were 800–1000 and 1300°C, respectively. Yb₂SiO₅, α-Yb₂Si₂O₇, and β-Yb₂Si₂O₇ were gradually formed between 800 and 1000°C, and Yb₂SiO₅ and α-Yb₂Si₂O₇ were completely transformed into β-Yb₂Si₂O₇ at a temperature above 1200°C. The weight loss of Yb₂Si₂O₇/(SiC_w–mullite)/SiC tri-layer coating coated specimens was 0.15 × 10⁻³ g cm⁻² after 200 h oxidation at 1400°C, which is lower than that of Yb₂Si₂O₇/mullite/SiC tri-layer coating (2.84 × 10⁻³ g cm⁻²). The SiC whiskers in mullite middle coating can not only alleviate the coefficient of thermal expansion difference between mullite middle coating and β-Yb₂Si₂O₇ outer coating, but also improve the self-healing performance of the mullite middle coating owing to the self-healing aluminosilicate glass phase formed by the reaction between SiO₂ (oxidation of SiC whiskers) and mullite particles.     

High-strength SiC joints fabricated at a low-temperature of 1400°C using a novel low activation filler of Praseodymium

High-strength SiC joints were successfully obtained by electric current field-assisted sintering technique at a low temperature of 1400°C using a Pr coating (100 nm) as the initial joining filler. A Pr₃Si₂C₂ transient phase was formed in situ by the interfacial reaction, while the eutectic reaction between Pr₃Si₂C₂ and SiC at ∼1150°C resulted in the formation of a liquid phase. The liquid phase promoted the atomic diffusion at the interface and improved consolidation of the newly precipitated nano-sized SiC with the SiC matrix. This led to the formation of partially seamless joints of SiC. When the thickness of the joining layer decreased from 1 to 100 nm, the content of the residual Pr-O phase at the interface decreased, while the bending strength of the joints increased. A sound SiC joint with a bending strength of 227 ± 12 MPa was obtained at such a low temperature as 1400°C when a 100 nm Pr coating was applied.     

In situ pressureless sintering of SiC/MoSi2 composites

SiC-reinforced MoSi₂ composites have been successfully prepared by in situ pressureless sintering from elemental powders of Mo, Si and C. Meanwhile, the evolutions of the samples’ microstructure and phase at different temperatures were investigated by using X-ray diffraction (XRD) and scanning electron microscopy (SEM) with an energy dispersive X-ray spectrometer (EDS). It can be seen that at the temperature of 1100 °C, the main phases were Mo and Si, accompanying with a small amount of rich molybdenum products Mo₅Si₃ and Mo₃Si. Then the main phases changed to MoSi₂ and SiC when the sintering temperature reached 1300 °C. Finally we obtained MoSi₂/SiC composites with well-dispersed SiC particles after sintering at the temperature of 1550 °C for 120 min. The evolution of porosity in these composites fits the porosity reduction model well developed by Pines and Bruck, which revealed the particle agglomeration in the composites. The flexural strength and fracture toughness of 10% SiC/MoSi₂ composites were up to 274.5 MPa and 5.5 MPa m^1/2, increased by approximately 40.8% and 30.6% compared with those of monolithic MoSi₂, respectively.     

A dense and fine-grained SiC/Ti3Si(Al)C2 composite and its high-temperature oxidation behavior

A dense SiC/Ti₃Si(Al)C₂ composite was synthesized by in situ hot pressing powders of Si, TiC and Al as a sintering additive at 1500 °C for 2 h under 30 MPa in Ar atmosphere. This composite has a fine-grained and homogeneous microstructure with grain sizes of 5 μm for Ti₃Si(Al)C₂ and of 1 μm for SiC. The SiC/Ti₃Si(Al)C₂ composite possesses an improved oxidation resistance, with parabolic rate constants of 4.57 × 10^?8 kg²/m⁴/s at 1200 °C and 1.31 × 10^?7 kg²/m⁴/s at 1300 °C. This study provides an experimental evidence to confirm the formation of amorphous phases in the oxide scale of the SiC/Ti₃Si(Al)C₂ composite. Microstructure and phase composition of the SiC/Ti₃Si(Al)C₂ composite and oxide scales were identified by X-ray diffractometry and scanning electron microscopy. The mechanism for the enhanced oxidation resistance has been discussed.     

Low-temperature Pr3Si2C2-assisted liquid-phase sintering of SiC with improved thermal conductivity

A novel Pr₃Si₂C₂ additive was uniformly coated on SiC particles using a molten-salt method to fabricate a high-density SiC ceramics via liquid-phase spark plasma sintering at a relatively low temperature (1400°C). According to the calculated Pr–Si–C-phase diagram, the liquid phase was formed at ∼1217°C, which effectively improved the sintering rate of SiC by the solution–reprecipitation process. When the sintering temperature increased from 1400 to 1600°C, the thermal conductivity of SiC increased from 84 to 126 W/(m K), as a consequence of the grain growth. However, an increasing amount of the sintering additive increased the interfacial thermal resistance, resulting in a decrease of thermal conductivity of the materials. The highest thermal conductivity of 141 W/(m K) was obtained for the material having the largest SiC grains and an optimized amount of the additive at the grain boundaries and triple junctions. The proposed Pr₃Si₂C₂-assisted liquid-phase sintering of SiC can be potentially used for the fabrication of SiC-based ceramic composites, where a low sintering temperature would inhibit the grain growth of SiC fibers.     

Reactive brazing Cf/SiC to itself and to Mo using the NiPdPtAu-Cr filler alloy

The NiPdPtAu-Cr filler alloy was proposed for joining C_f/SiC composites. The wettability on C_f/SiC composite was studied by the sessile drop method at 1200 °C for 30 min. Under the brazing condition of 1200 °C for 10 min, the C_f/SiC-C_f/SiC joint strength was only 51.7 MPa at room temperature. However, when used a Mo layer, the C_f/SiC-Mo-C_f/SiC joint strength was remarkably increased to 133.2 MPa at room temperature and 149.5 MPa at 900 °C, respectively. At the interface between C_f/SiC and Mo, Mo participated in interfacial reactions, with the formation of Cr₃C₂/Mo₂C reaction layers at the C_f/SiC surface. The improvement in the joint strength should be mainly attributed to the formation of MoNiSi. The C_f/SiC-Mo joint strength was 86.9 MPa at room temperature and 73.7 MPa at 900 °C, respectively. After 10 cycles of thermal shock test at 900 °C the C_f/SiC-Mo joint strength of 71.6 MPa was still maintained.     

Ti3Si(Al)C2-based ceramics fabricated by reactive melt infiltration with Al70Si30 alloy

Dense Ti₃Si(Al)C₂-based ceramics were synthesized using reactive melt infiltration (RMI) of Al₇₀Si₃₀ alloy into the porous TiC preforms. The effects of the infiltration temperature on the microstructure and mechanical properties of the synthesized composites were investigated. All the composites infiltrated at different temperatures were composed of Ti₃Si(Al)C₂, TiC, SiC, Ti(Al, Si)₃ and Al. With the increase of infiltration temperature from 1050 °C to 1500 °C, the Ti₃Si(Al)C₂ content increased to 52 vol.% and the TiC content decreased to 15 vol.%, and the Vickers hardness, flexural strength and fracture toughness of Ti₃Si(Al)C₂-based composite reached to 9.95 GPa, 328 MPa and 4.8 MPa m^1/2, respectively.     

Investigation of MoSi2 melt infiltrated RSiC and its oxidation behavior

Melt infiltration process was employed to fill molten MoSi₂ into the pores of recrystallized silicon carbide (RSiC) to improve the oxidation resistance of RSiC, and an almost fully dense RSiC-MoSi₂ composite with the microstructure of two-phase interpenetrated network was obtained. The phase compositions of the composites are mainly SiC and MoSi₂, including a small amount of Mo_4.8Si₃C_0.6 and Mo₅Si₃. The flexural strength of the composites at room temperature was 11-32% higher than that of as-received RSiC. The cyclic oxidation tests at 1500 °C indicated that both the RSiC-MoSi₂ composites and RSiC exhibited a parabolic oxidation behavior, and the corresponding parabolic rate constants of the composites were almost an order of magnitude lower than those of RSiC, resulting in a great improvement of oxidation resistance of RSiC-MoSi₂.     

Vapour phase synthesis and characterisation of Cf/SiC composites with self-healing Si-B-C monolayer coating

Carbon fibre reinforced CVI-SiC matrix (C_f/SiC) composite is well known for its superior properties such as low density, high specific modulus, high fracture toughness, and high temperature mechanical properties. In the present work, 2.5-Directional C_f/SiC composites with (PyC/SiC) _n=4 multilayer interface having two different thicknesses with a density of ~2.1 g cm^-3 are prepared through isobaric isothermal chemical vapour infiltration technique. High temperature tensile properties of the prepared composites with and without Si-B-C seal coating are studied and the results are presented. Samples prepared without seal coat exhibited a K_ICof ~ 30 MPa m^1/2, and tensile strength of ≥200 MPa at room temperature. Si-B-C seal coated C_f/SiC composites has shown significant increase (28%) in high temperature tensile strength at 1200 °C and 1500 °C respectively compared to uncoated composites. Microstructural observations, XRD, and XPS studies support the observed thermomechanical behaviour of these composites at 1200 °C and 1500 °C.     

High-temperature properties and interface evolution of C/SiBCN composites prepared by precursor infiltration and pyrolysis

C/SiBCN composites with a density of 1.64 g/cm³ were prepared via precursor infiltration and pyrolysis and the bending strength and modulus at room temperature was 305 MPa and 53.5 GPa. The precursor derived SiBCN ceramics showed good thermal stability at 1600 °C and the SiC and Si₃N₄ crystals appeared above 1700 °C. The bending strength of the composites was 180 MPa after heat treatment at 1500 °C, and maintained at 40 MPa-50 MPa after heat treatment for 2 h at 1600 °C–1900 °C. In C/SiBCN composites, SiBCN matrix could retain amorphous up to 1500 °C and SiC grains appeared at 1600 °C but without Si₃N₄. The reason for no detection of Si₃N₄ was that the carbon fiber reacted with Si₃N₄ to form an interface layer (composed of SiC and unreacted C) and a polycrystalline transition layer (composed of B and C elements), leading to the degradation of the mechanical properties.     

Synthesis and thermal expansion behaviors of spin-coated Sc2Mo3O12 thin films

Orthorhombic Sc₂Mo₃O₁₂ films have been successfully prepared via spin coating technique followed by annealing at 500–750 °C. The phase composition, microstructure, morphology and negative thermal behavior of the synthesized Sc₂Mo₃O₁₂ films were investigated. XRD and XPS analysis indicate that as-deposited film is amorphous. Orthorhombic Sc₂Mo₃O₁₂ films can be prepared after post-annealing at 500–750 °C for 1 h. The crystallinity of Sc₂Mo₃O₁₂ films gradually improved with the increase of post-annealing temperature. SEM analysis shows as-deposited film is smooth and compact, and the grain size of Sc₂Mo₃O₁₂ film grows up as the post-annealing temperature increases. Variable temperature XRD analysis demonstrates that the synthesized orthorhombic Sc₂Mo₃O₁₂ films show stable thermo-chemical and anisotropic NTE property in 25–700 °C. The corresponding coefficients of thermal expansion (CTEs) of the orthorhombic Sc₂Mo₃O₁₂ film in a, b and c directions are ?6.68 × 10^?6 °C^?1, 5.08 × 10^?6 °C^?1 and ?4.76 × 10^?6 °C^?1, respectively. The whole unit cell of the orthorhombic Sc₂Mo₃O₁₂ film shrinks and the volumetric CTE of the Sc₂Mo₃O₁₂ thin film is ?6.36 × 10^?6 °C^?1, and the linear CTE is about ?2.12 × 10^?6 °C^?1 (α_v = 3α_l).     

Effects of polycarbosilane infiltration processes on the microstructure and mechanical properties of 3D-Cf/SiC composites

Three-dimensional braided carbon fiber-reinforced silicon carbide (3D-C_f/SiC) composites were prepared through eight cycles of infiltration of polycarbosilane (PCS)/divinylbenzene (DVB) and subsequent pyrolysis under an inert atmosphere. The effects of infiltration processes on the microstructure and mechanical properties of the C_f/SiC composites were investigated. The results showed that increasing temperature could reduce the viscosity of the PCS/DVB solution, which was propitious to the infiltration processes. The density and flexural strength of 3D-C_f/SiC composites fabricated with vacuum infiltration were 1.794 g cm⁻³ and 557 MPa, respectively. Compared to vacuum infiltration, heating and pressure infiltration could improve the infiltration efficiency so that the composites exhibited higher density and flexural strength, i.e., 1.944 g cm⁻³ and 662 MPa. When tested at 1650 °C and 1800 °C in vacuum, the flexural strength reached 647 MPa and 602 MPa, respectively.     

Wetting and interfacial behavior of Al–Ti/4H–SiC system:A combined study of experiment and DFT simulation

Wetting and interfacial behavior of molten Al-(10, 20, 30, 40) at.%Ti alloys on C-terminated 4H–SiC at 1500 and 1550 °C were investigated experimentally, and theoretical bonding strength, structure stability and electronic structure of interfacial reaction products/C-terminated 4H–SiC interfaces were evaluated by first-principle calculations. The wetting experiments show that the Al–Ti/SiC systems present excellent wettability with contact angle of less than 15° except the Al–40Ti/SiC system performed at 1500 °C × 30 min. The SEM-EDS and TEM analyses demonstrate that the reaction products are mainly composed of Al₄C₃, TiC, Ti₃SiC₂, Ti₅Si₃C_X and τ phase, and their formation and evolution can be mainly affected by the Ti concentration in the Al–Ti alloys and wetting temperature. Moreover, the calculated results show that the SiC/C-terminated TiC interface presents the highest work of separation and its electronic property reveals that the localization of electrons and formation of covalent bond between interfacial C atoms lead to the excellent bonding strength of SiC/TiC interface.