Synthesize and crystallization behavior of SiOC/SiC nanocomposites derived from organosilane slurry residue

A route preparing SiOC/SiC nanocomposites directly by pyrolysis of organosilane slurry residue was investigated. Organosilane slurry residue's unique composition, containing both silicon and carbon, offers an intriguing platform for developing advanced ceramic materials. The pyrolysis process is examined comprehensively, revealing the chemical reactions and structural changes leading to SiC crystals formation. The phase evolution at various annealing temperatures was revealed. Crystallization behavior in the process were studied. The results reveal that SiOC matrix was generated at annealed temperature 800°C and SiC nanoparticles were formed at 1300°C. In comparison to phase separation of SiOC, carbothermal reduction of SiO₂ was domain in SiC formation. This research advances the understanding of SiOC/SiC nanocomposites, highlighting the value of repurposing industrial byproducts for sustainable and innovative materials development.     

Microstructural and optical properties of the ZnS ceramics sintered by vacuum hot-pressing using hydrothermally synthesized ZnS powders

ZnS nanopowders annealed at low temperatures (≤550?°C) have a pure cubic structure, while a small amount of hexagonal phase formed in specimens annealed at temperatures ≥700?°C. The particle sizes of the ZnS nanopowders increased with the annealing temperature. ZnS ceramics that were sintered using ZnS nanopowders annealed at low temperatures (≤550?°C) exhibited low transmittance, because of their porous microstructure. ZnS ceramics that were synthesized using ZnS powders annealed at high temperatures (≥800?°C) containing large agglomerated particles, also exhibited low transmittance, due to the presence of a liquid phase. A carbonate absorption band was found from the ZnS ceramics with small grains, because carbon ions diffused from the graphite mold into the ZnS ceramics during sintering, probably through the grain boundaries, and formed carbonates. A ZnS ceramic that was sintered at 1020?°C using the nanopowders annealed at 750?°C exhibited dense microstructure, with a large transmittance, 68%, in the wavelength range 6.0–12?μm.     

Semiconductor-conductor transition of pristine polymer-derived ceramics SiC pyrolyzed at temperature range from 1200°C to 1800°C

This paper studies the effect of pyrolysis temperature on the semiconductor-conductor transition of pristine polymer-derived ceramic silicon carbide (PDC SiC). A comprehensive study of microstructural evolution and conduction mechanism of PDC SiC pyrolyzed at the temperature range of 1200°C-1800°C is presented. At relatively lower pyrolysis temperatures (1200°C-1600°C), the carbon phase goes through a microstructural evolution from amorphous carbon to nanocrystalline carbon. The PDC SiC samples behave as a semiconductor and the electron transport is governed by the band tail hopping (BTH) mechanism in low pyrolysis temperature (1300°C); by a mixed mechanism driven by band tail hopping and tunneling at intermediate temperature (1500°C). At higher pyrolysis temperatures (1700°C-1800°C), a percolative network of continuous turbostratic carbon is formed up along the grain boundary of the crystallized SiC. The samples demonstrate metal-like conductive response and their resistivity increases monotonically with the increasing measuring temperature.     

Effect of elevated annealing temperature on electrical conductivity and magnetic properties of iron phthalocyanine polymer

A novel iron phthaocyanine (FePc) polymer was prepared via the polymerization of phthalonitrile with ferrous chloride and investigated for morphology, crystallinity, conductivity, dielectric and magnetic properties at different annealing temperatures from 300 °C to 700 °C. The results showed that the elevating annealing temperature could significantly change the morphology and microstructure of FePc polymer, leading to the formation of the turbostratic carbon, α-Fe phase and cemetite, and enhance electrical conductivity and magnetic properties. It was worth noting that the dramatic transition of conductivity, dielectric and magnetic properties appeared when the annealing temperature was 550 °C. The electrical conductivity of the samples exhibited a transition of electrical behavior from an insulator to semiconductor. And the saturation and remanent magnetization of the annealed FePc polymer increased from 0.24 to 6.18 emu/g and from 0.03 to 2.38 emu/g, respectively. The pyrolysis of FePc polymer annealed at high temperature was believed to become a good way to get electrical or magnetic materials.     

Complex impedance spectroscopy study of a liquid-phase-sintered α-SiC ceramic

The electrical response of a liquid-phase-sintered (LPS) α-SiC with 10 wt.% Y₃Al₅O₁₂ (YAG) additives was studied from near-ambient temperature up to 800 °C by complex impedance spectroscopy. The electrical conductivity of this LPS SiC ceramic was found to increase with increasing temperature, which was attributed to the semiconductor nature of the SiC grains. It was concluded that the contribution of the SiC grains to the electrical conductivity of the LPS SiC ceramic at moderate temperatures (<450 °C) is a somewhat greater than that of the YAG phase. In contrast, at higher temperatures the SiC grains control the electrical conductivity of the LPS SiC ceramic. It was also found that there are two activation energies for the electrical conduction process of the α-SiC grains. These are 0.19 eV at temperatures lower than ∼400 °C and 2.96 eV at temperatures higher than ∼500 °C. The existence of two temperature-dependence conduction regimes reflects the core–shell substructure that develops within the SiC grains during the liquid-phase sintering, where the core is pure SiC (intrinsic semiconductor) and the shell is mainly Al-doped SiC (extrinsic semiconductor).     

Electromagnetic characteristics and microstructure stability of Nextel 610 fiber after heat treatment

The thermal and microstructure stability of Nextel 610 fibers has great influence on high-temperature application of Nextel 610 fiber-reinforced ceramic matrix composites. In this work, Nextel 610 fibers were heat treated at 500–700 °C in vacuum and 800–1100 °C in Ar atmosphere, respectively. The sizing agent on Nextel 610 fiber surface could be decomposed into pyrolytic carbon, SiC and gaseous little molecules at lower temperatures, otherwise it was decomposed mainly in the form of gaseous little molecules at higher temperatures, so that the complex permittivity firstly increased and then decreased with the increasing of temperatures. The results showed that the annealed Nextel 610 fiber (T>900 °C) could be regarded as electromagnetic wave transparent fibers, while the tensile strength had declined by half when the temperature increased to 1100 °C. Therefore, Nextel 610 fibers after being annealed at higher temperatures could be further used as reinforcement to prepare high temperature ceramic matrix composites for electromagnetic wave absorption and transparent applications.     

Enhanced electrical properties of In-Ga-Sn-O thin films at low-temperature annealing

Electrical and optical properties of In-Ga-Sn-O (IGTO) thin films deposited by radio-frequency magnetron sputtering were investigated according to annealing temperatures. While IGTO films remained an amorphous phase even after a heat treatment at temperature up to 500 °C, Hall measurements showed that annealing temperature had a significant impact on electrical properties of IGTO thin films. After investigating a wide range of annealing temperatures for samples from as-deposited state to 500 °C, IGTO film annealed at 200 °C exhibited the best electrical performance with a conductivity of 229.31 Ω^?1cm^?1, a Hall mobility of 36.89 cm²V^?1s^?1, and a carrier concentration of 3.85 × 10¹⁹ cm^?3. Changes in proportions of oxygen-related defects and percentages of Sn²⁺ and Sn⁴⁺ ions within IGTO films according to annealing temperatures were analyzed with X-ray photoelectron spectroscopy to determine the cause of the superb performance of IGTO at a low temperature. In IGTO films annealed at 200 °C, Sn⁴⁺ ions acting as donor defects accounted for a high percentage, whereas hydroxyl groups working as electron traps showed a significantly reduced percentage compared to the as-deposited film. Optical band gaps of IGTO films obtained from UV–visible spectrum were 3.38–3.47 eV. The largest band gap value of 3.47 eV for the IGTO film annealed at 200 °C could be attributed to an increase in Fermi-level due to an increase of carrier concentration in the conduction band. These spectroscopic results well matched with electrical properties of IGTO films according to annealing temperatures. Excellent electrical properties of IGTO thin films annealed at 200 °C could be largely due to Sn donors besides oxygen vacancies, resulting in a significant increase in free carriers despite a low annealing. temperature.     

Spectroscopic characterization of thin SiC films

The electrical, structural and optical properties of thin SiC films were investigated. A new approach based on high temperature annealing of layered carbon–silicon structures was used for the formation of the films. The SiC films were prepared by deposition of 30 nm thick carbon films on crystalline silicon (c-Si) and on porous silicon layers grown on c-Si. The layers were annealed to temperatures between 800 and 1400°C for different annealing times ranging between 15 and 180 s. The structure of the resulting SiC films was analyzed by Raman spectroscopy. The Raman spectra of as-deposited films consist of two broad bands at 1350 and 1580 cm⁻¹ characteristic of the presence of amorphous carbon. These bands were shifted to lower frequencies in the spectra of annealed layers and were assigned to the hexagonal and cubic SiC phases. The photoluminescence spectra of the studied layers show a broad band at 550 nm. The most intense photoluminescence was observed from non-annealed porous silicon layers covered with thin carbon films. A degradation of the luminescence and a simultaneous increase of the conductivity of the layers with increasing annealing temperature and/or duration of annealing was observed. This behavior strongly suggests the creation of defect states which determine the conductivity of the layers and at the same time act as non-radiative centers. The increase of defect states was explained as originating from the dehydrogenation of the silicon carbide layers by annealing.     

Dielectric and EMW absorbing properties of PDCs-SiBCN annealed at different temperatures

Polymer derived SiBCN ceramics (PDCs-SiBCN) were prepared from polyborosilazane and then annealed at 1200–1800 °C in N₂. Effects of annealing temperature on the microstructure, phase composition, dielectric and wave-absorbing properties of ceramics were investigated. Results showed that nano-sized SiC grains were formed in amorphous SiBCN after annealing and the content and crystallization degree of SiC gradually intensified with annealing temperature increasing. The permittivity, dielectric loss and electrical conductivity of PDCs-SiBCN gradually increased as the temperature rose due to the formation of conductivity network of SiC grains and the increase of nano-grain boundary. The increased content of SiC (as the dipole) and interface between SiC nano-grains and amorphous SiBCN phase led to a higher polarization ability and higher dielectric loss. The RC gradually decreased with the annealing temperature increasing, demonstrating the annealed ceramics had the superior wave-absorbing ability and high annealing temperature was conducive to the improvement of wave-absorbing property.     

Si diffusion induced adhesion and corrosion resistance in annealed RF sputtered SiC films on graphite substrate

Silicon carbide (SiC) is one of the promising candidates for graphite protection in different applications involving high temperatures and a highly corrosive environment. An ideal Silicon carbide coating should withstand a corrosive environment without compromising its adhesion. Herein, RF magnetron sputtered silicon-rich SiC thin films were deposited on a graphite substrate followed by annealing at 1000 °C, 1200 °C, and 1400 °C in an inert atmosphere. The impact of annealing temperature on microstructure, adhesion and chemical stability of SiC thin films was demonstrated. Different analytical techniques like Scanning electron microscopy (SEM), X-Ray Diffraction (XRD), Fourier's Transform Infrared (FTIR) spectroscopy and nano-indentation were used to study microstructural evaluation and mechanical characteristics. Moreover, the electrochemical analysis (Tafel and Electrochemical impedance spectroscopy) was performed in 3.5% NaCl solution. The microstructural analysis revealed that the amorphous SiC thin film turned into a crystalline and dense film upon annealing. Scanning electron micrographs showed that silicon-rich regions at SiC film surface started to disappear as Si diffuses into graphite matrix at elevated temperatures. Both these factors contributed to improvement in the adhesion of SiC coating with graphite substrate as annealing temperature increased. In addition, the nano-indentation hardness of 5.2 GPa was obtained for as grown sample, which decreased at 1000 °C, and then increased at 1200 °C and 1400 °C. Furthermore, the electrochemical analysis confirmed the enhancement in corrosion resistance upon annealing at a temperature of 1200 °C and 1400 °C due to Si diffusion and film compactness in these samples.     

Single-source-precursor synthesis and high-temperature evolution of a boron-containing SiC/HfC ceramic nano/micro composite

A boron-containing SiHfC(N,O) amorphous ceramic was synthesized upon pyrolysis of a single-source-precursor at 1000 °C in Ar atmosphere. The high-temperature microstructural evolution of the ceramic at high temperatures was studied using X-ray powder diffraction, Raman spectroscopy, solid-state nuclear magnetic resonance spectroscopy and transmission electron microscopy. The results show that the ceramic consists of an SiHfC(N,O)-based amorphous matrix and finely dispersed sp²-hybridized boron-containing carbon (i.e. B_yC). High temperature annealing of B_yC/SiHfC(N,O) leads to the precipitation of HfC_xN_1-x nanoparticles as well as to β-SiC crystallization. After annealing at temperatures beyond 1900 °C, HfB₂ formation was observed. The incorporation of boron into SiHfC(N,O) leads to an increase of its sintering activity, consequently providing dense materials possessing improved mechanical properties as compared to those of boron-free SiC/HfC. Thus, hardness and elastic modulus values up to 25.7 ± 5.3 and 344.7 ± 43.0 GPa, respectively, were measured for the dense monolithic SiC/HfC_xN_1-x/HfB₂/C ceramic nano/micro composite.     

Thermomechanical characterisation of coal tar pitch- based carbon containing SiC nanoparticles

Coal tar pitch (CTP) modified with silicon carbide nanoparticles (nSiC) was used as a carbon binder precursor for the manufacture of carbon materials. Carbon samples were prepared in the form of a composition consisting of synthetic coke, graphite and nSiC- modified CTP prior to heat treatment at temperatures from 800 °C to 2800 °C. The effect of ceramic nanofiller in CTP on oxidation resistance of carbon samples obtained at various temperatures was studied. Physical and mechanical properties of carbon samples obtained at 2000 °C and 2800 °C were analysed. nSiC presence in CTP was found to change the elevated temperature properties of carbon samples. The oxidation tests conducted at 600 °C in air showed a significant improvement of the resistance of carbon samples modified with small amount of nSiC and annealed at 2000 °C. Properties investigated included characteristics important for application of carbon materials for carbon electrode manufacturing, i.e., electrical and thermal conductivities as well as mechanical properties. Due to microstructural changes of carbon samples in the presence of nSiC filler physical and mechanical properties improved after annealing the samples at high temperature in comparison to unmodified carbon samples.     

Mechanical Characterization of Annealed ZrB2–SiC Composites

Composites consisting of 70 vol% ZrB₂ and 30 vol% α‐SiC particles were hot pressed to near full density and subsequently annealed at temperatures ranging from 1000°C to 2000°C. Strength, elastic modulus, and hardness were measured for as‐processed and annealed composites. Raman spectroscopy was employed to measure the thermal residual stresses within the silicon carbide (SiC) phase of the composites. Elastic modulus and hardness were unaffected by annealing conditions. Strength was not affected by annealing at 1400°C or above; however, strength increased for samples annealed below 1400°C. Annealing under uniaxial pressure was found to be more effective than annealing without applied pressure. The average strength of materials annealed at 1400°C or above was ~700 MPa, whereas that of materials annealed at 1000°C, under a 100 MPa applied pressure, averaged ~910 MPa. Raman stress measurements revealed that the distribution of stresses in the composites was altered for samples annealed below 1400°C resulting in increased strength.     

Electrically conductive SiC ceramics processed by pressureless sintering

Polycrystalline SiC ceramics with 10 vol% Y₂O₃-AlN additives were sintered without any applied pressure at temperatures of 1900-2050°C in nitrogen. The electrical resistivity of the resulting SiC ceramics decreased from 6.5 × 10¹ to 1.9 × 10⁻² Ω·cm as the sintering temperature increased from 1900 to 2050°C. The average grain size increased from 0.68 to 2.34 μm with increase in sintering temperature. A decrease in the electrical resistivity with increasing sintering temperature was attributed to the grain-growth-induced N-doping in the SiC grains, which is supported by the enhanced carrier density. The electrical conductivity of the SiC ceramic sintered at 2050°C was ~53 Ω⁻¹·cm⁻¹ at room temperature. This ceramic achieved the highest electrical conductivity among pressureless liquid-phase sintered SiC ceramics.     

Synthesis,Characterization, and Microstructure of ZrC/SiC Composite Ceramics via Liquid Precursor Conversion Method

The ceramic precursor for ZrC/SiC was prepared via solution‐based processing using polyzirconoxane, polycarbosilane, and divinylbenzene. The precursor could be transformed into ZrC/SiC ceramic powders at relative low temperature (1500°C). The cross‐linking process of precursor was studied by FT–IR. The conversion from precursor into ceramic was investigated by TGA, XRD. The ceramic compositions and microstructures were identified by element analysis, Raman spectra, SEM, and corresponding EDS. The results indicated that the ceramic samples remained amorphous below 1000°C and t–ZrO₂ initially generated at 1200°C. Further heating to 1400°C led to the formation of ZrC and SiC with the phase transformation of ZrO₂ and almost pure ZrC/SiC could be obtained upon heat‐treatment at 1500°C. During heat treatments, the ceramic sample changed from compact to porous due to carbothermal reduction. The ceramic powders with particle size of 100 nm~400 nm consisted of high crystalline degree ZrC and SiC phases, and Zr, Si, C were well distributed at the different sites in ceramic powders. The free carbon content was lowered to 1.60 wt% in final ZrC/SiC composite ceramics.     

Microstructures and thermal conductivities of reaction sintered SiC ceramics

Abstract

Reaction sintered SiC ceramics were prepared by the silicon melt infiltration method over temperatures of 1450?1550°C. The effects of the carbon and silicon contents of the starting materials as well as the sintering temperature and time on the thermal conductivities and microstructures of the ceramic materials were studied. The thermal conductivities and microstructures of the samples were characterised using thermal conductivity measurements, X-ray diffraction analysis, scanning electron microscopy, energy-dispersive X-ray spectroscopy and mercury injection porosimetry. The results showed that sintering temperature and time as well as the carbon and silicon contents of the green specimens are the main factors affecting the microstructure and porosity of reaction bonded SiC ceramics. Increasing the reaction temperature and time decreased the porosity of the ceramics. This was due to the infiltration of the silicon melt into the ceramic specimens. The thermal conductivity and porosity of the sample sintered at 1550°C for 3 h in an argon atmosphere were 102·5 W m K^?1 and 0·3% respectively.     

Crystallization Mechanism of CVD Si3N4–SiCN Composite Ceramics Annealed in N2 Atmosphere and Their Excellent EMW Absorption Properties

To tailor a new electromagnetic wave (EMW) absorbing material with lower reflection coefficient (RC) and larger operating frequency band, the CVD Si₃N₄–SiCN composite ceramics were prepared from SiCl₄–NH₃–C₃H₆–H₂–Ar system and then annealed at the temperatures of 1400–1700°C in N₂ atmosphere. Effect of the annealing temperatures on the microstructure, phase composition, permittivity, and microwave‐absorbing properties of the ceramic were investigated. Results showed that the CVD Si₃N₄–SiCN ceramics gradually crystallized into nanosized SiC grains, Si₃N₄ grains and graphite (T ≤ 1600°C), and then the grains grew up at T = 1700°C. The permittivity, dielectric loss, and electrical conductivity of as‐annealed CVD Si₃N₄–SiCN ceramics (T ≤ 1600°C) increased firstly due to the formation of conductivity and polarity network and the increase in nanograin boundary, and then decreased at 1700°C because of the growth of nanograins and the disappearance of nanograin boundary. The minimal RC and effective absorption bandwidth of the as‐annealed CVD Si₃N₄–SiCN ceramic at 1600°C was ?41.67 dB at the thickness of 2.55 mm and 3.95 GHz at the thickness of 3.05 mm, respectively, demonstrating that the totally crystallized CVD Si₃N₄–SiCN ceramic (T = 1600°C) had the superior microwave‐absorbing ability.     

The effect of pre-annealing and post-annealing on the transparency of MgAl2O4, prepared by slip casting and spark plasma sintering (SPS)

The aim of this paper is to investigate the effect of slip casting process and the annealing before and after sintering to achieve a transparent MgAl₂O₄. To remove contaminants such as carbon from the structure of shaped spinel bodies, at first, the samples were annealed at temperature of 800?°C, 900?°C and 1000?°C for 2?h and then sintered at 1400?°C. By annealing the sample before sintering at 900?°C, the transmission increased (15% at IR region and 10% at visible region). Although by annealing the samples, the amount of carbon contamination reduced. Annealing the samples after sintering also had some desirable results. The samples annealed at temperature of 1200?°C for a time of 3, 5 and 10?h. The darkness of samples reduced due to the removal of carbon impurities and the sample was annealed at 1200?°C for 5?h had the most transparency in the visible and infrared regions.     

High-temperature microstructural evolution of SiCN fibers derived from polycarbosilane with different C/N ratios

Research into the high-temperature microstructural evolution of SiCN ceramic fibers is important for the aerospace application of advanced ceramic matrix composites in harsh environments. In this work, we studied the microstructural evolution of SiCN fibers with different C/N ratios that derived from polycarbosilane fibers at the annealing temperature range of 1400∼1600 °C. These results showed that the phase separation of SiC_xN_y phase and the two-dimension grain growth process of free carbon nanoclusters could be processed at the researched temperature range. As the annealing temperature increased to 1600 °C, the crystallization of amorphous SiC and Si₃N₄ could be detected. SEM and Raman analysis showed that the decomposition and carbothermal reduction of the Si₃N₄ phase at high temperatures played primary roles in contributing to the fiber strength degradation. Thus, a higher C/N ratio, which is beneficial for inhibiting the decomposition of amorphous Si₃N₄, helps SiCN fibers retain high tensile strength at high temperatures.     

Enhanced hydrogen evolution reaction catalyzed by carbon-rich Mo4.8Si3C0.6/C/SiC nanocomposites via a PDC approach

In this study, mesoporous carbon-rich Mo_4.8Si₃C_0.6/C/SiC ceramic nanocomposites were successfully prepared via a single-source precursor route, starting from allylhydridopolycarbosilane (AHPCS, SMP-10), bis(acetylacetonato) dioxomolybdenum (VI) [MoO₂(acac)₂], and divinylbenzene (DVB). Besides, polystyrene (PS) was used as a pore former. The obtained carbon-rich single-source precursor/PS mixtures were pyrolyzed at 1100°C, and then annealed at 1350°C-1600°C to fabricate a series of carbon-rich Mo_4.8Si₃C_0.6/C/SiC ceramics comprised of high carbon content above 50 wt%. In comparison to the carbon-poor materials, the carbon-rich samples retain the higher specific surface area up to 214.6-304 m²/g at higher annealing temperatures (1350°C-1600°C) due to the enhancement of carbothermal reaction. The carbon-rich samples synthesized at 1500°C, denoted as SM/Mo/PS/DVB 2-1-4-2 1500 exhibit enhanced electrocatalytic performance with ultra-low overpotentials of 119 mV vs reversible hydrogen electrode at a current density of 10 mA cm⁻² in acidic media, which is superior to that of the Mo_4.8Si₃C_0.6/C/SiC ceramic (138 mV) with lower carbon content reported in our previous study. Therefore, our porous materials comprised of high carbon content and Nowotny phase (Mo_4.8Si₃C_0.6, NP) are considered as promising catalysts for the hydrogen evolution reaction (HER).