Middle-low temperature sintering and piezoelectric properties of CuO and Bi2O3 doped PMS-PZT based ceramics for ultrasonic motors

A ternary solid-solution piezoelectric ceramic of rare-earth oxides modified 0.03 Pb(Mn_1/3Sb_2/3)O₃-0.97 Pb(Zr_0.505Ti_0.495)O₃ + x wt.% CuO + y wt.% Bi₂O₃ (PMS-PZT + x wt.% CuO + y wt. % Bi₂O₃) (x, y = 0–0.2) was successfully prepared via a transient-liquid-phase sintering. Both Cu²⁺ and Bi³⁺ were believed to replace the A-site Pb ions and to evidently induce the lattice shrinkage and the distortion decrease. However, the addition of only a small amount of CuO was found to effectively reduce the sintering temperature, sustain good piezoelectric properties and predominant transgranular fracture modes, but obviously increase the average grain size and high-field dielectric loss. Further experimental results indicate that the grain growth of the ceramics was inhibited effectively and the high-field dielectric loss was reduced through CuO and Bi₂O₃ co-doping. The 0.05 wt% CuO and 0.15 wt% Bi₂O₃ co-doped PMS-PZT ceramics sintered at 1050 °C exhibit excellent dielectric and piezoelectric properties of d₃₃ = 410 pC/N, k_p = 0.62, Q_m = 1478, ε_r = 1550, tan δ = 0.8% (400 V/mm) and T_c = 330 °C. The experimental results can provide a solid fundament for multilayer piezoelectric actuating devices.     

Low‐Temperature Sintering of Bi0.5(Na,K)0.5TiO3 for Multilayer Ceramic Actuators

We investigated the influence of CuO amount (0.5–3.0 mol%), sintering temperature (900°C–1000°C), and sintering time (2–6 h) on the low‐temperature sintering behavior of CuO‐added Bi_0.5(Na_0.78K_0.22)_0.5TiO₃ (BNKT22) ceramics. Normalized strain (S_max/E_max), piezoelectric coefficient (d₃₃), and remanent polarization (P_r) of 1.0 mol% CuO‐added BNKT22 ceramics sintered at 950°C for 4 h was 280 pm/V, 180 pC/N, and 28 μC/cm², respectively. These values are similar to those of pure BNKT22 ceramics sintered at 1150°C. In addition, we investigated the performance of multilayer ceramic actuators made from CuO‐added BNKT22 in acoustic sound speaker devices. A prototype sound speaker device showed similar output sound pressure levels as a Pb(Zr,Ti)O₃‐based device in the frequency range 0.66–20 kHz. This result highlights the feasibility of using low‐cost multilayer ceramic devices made of lead‐free BNKT‐based piezoelectric materials in sound speaker devices.     

Densification behavior and electrical properties of CuO-doped Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 ternary ceramics

CuO modified Pb(In_1/2Nb_1/2)O₃–Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PIN–PMN–PT) ternary relaxor based ferroelectrics with the composition near the morphotropic phase boundary were synthesized by two-step columbite precursor method. The introduction of CuO significantly improved the sinterability of PIN–PMN–PT ceramics, resulting in the full densification of samples at lower sintering temperatures. It also profoundly modified the crystal structure and fracture mode of the ceramics. Properly increasing CuO content led to the disappearance of rhombohedral-tetragonal phase transition, remarkably improved the Curie temperature (T_c), and made the ceramics more relaxorlike. The ternary ceramics doped with 0.25 wt% CuO possessed optimum piezoelectric properties (d₃₃=584 pC/N, d₃₃^*=948 pC/N, and k_p=0.68), high ferroelectric properties (E_c=9.9 kV/cm, and P_r=33.1 μC/cm²), low dielectric loss (tan δ=0.9%), and wider temperature usage range (T_c=225 °C). The obtained properties are much higher than those of previously reported PIN–PMN–PT based ceramics, indicating that CuO doped PIN–PMN–PT is a promising candidate for electromechanical applications with high performance and wide temperature/electric field usage ranges.     

Effects of Li2CO3 and Sm2O3 additives on low-temperature sintering and piezoelectric properties of PZN-PZT ceramics

To assist the development of applications for multilayer piezoelectric devices, the low-temperature sintering piezoelectric ceramics of 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.49Ti_0.51)O₃ with Li₂CO₃ and Sm₂O₃ additives were fabricated by a conventional solid-state reaction, and their structural and piezoelectric properties were studied. With the addition of Li₂CO₃, the minimum sintering temperature of 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.49Ti_0.51)O₃ piezoelectric ceramics was reduced from 1125 °C to 950 °C through the formation of a liquid phase and its piezoelectric properties showed almost no degradation. When the sintering temperature was below 950 °C, however, the piezoelectric properties degraded obviously. The additional Sm₂O₃ resulted in a significant improvement in the piezoelectric properties of 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.49Ti_0.51)O₃ ceramic with added Li₂CO₃. When sintered at 900 °C, the optimized properties of the 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.49Ti_0.51)O₃ piezoelectric ceramic with 0.3 wt% Li₂CO₃ and 0.3 wt% Sm₂O₃ were obtained as d₃₃ = 483 pC/N, k₃₁ = 0.376, Q_m = 73, ɛ_r = 2524, tan δ = 0.0178.     

Enhanced high-power performance of Fe-doped PZMNZT piezoelectric ceramics

High-power piezoelectric ceramics are typically driven to output vibration velocity (v₀) under high AC electric fields. Herein, the Fe₂O₃ doped 0.125 Pb(Zn_1/3Nb_2/3) O₃–0.075 Pb(Mn_1/3Nb_2/3)O₃–0.8 Pb(Zr_0.48Ti_0.52)O₃(PZMNZT–xFe; x = 0.05–0.35) piezoelectric ceramics were prepared to enhance v₀, and the favorable comprehensive electrical properties, such as d₃₃ = 315 pC/N, Q_m = 1738, k_p = 0.58, k_t = 0.48, ε_r = 1156, tan δ = 0.4%, and T_c = 320°C, were achieved in the PZMNZT–0.15Fe ceramic. Most importantly, the PZMNZT–0.15Fe ceramic presented a reliable v₀ of 0.90 m/s, which was 2.25 times of the commercial PZT4 ceramic (∼0.40 m/s). The excellent high-power performance should be attributed to ordering functional elements such as crystal grains and ferroelectric domains. Overall, this work reveals that the PZMNZT–0.15Fe ceramic is competitive for high-power applications.     

Investigation of dielectric and piezoelectric properties in aliovalent Eu3+-modified Pb(Mg1/3Nb2/3)O3-PbTiO3 ceramics

Rare earth (Eu³⁺)-modified Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PMN-PT) polycrystalline ferroelectric ceramics were fabricated by high-temperature solid-state sintering, the phase structure, dielectric and piezoelectric properties were investigated. Eu³⁺ addition was found to significantly improve dielectric and piezoelectric properties of PMN-PT, where the optimized properties were achieved for the composition of 2.5 mol%Eu: 0.72PMN-0.28PT, with the piezoelectric d₃₃ = 1420 pC/N, dielectric ε_r = 12 200 and electromechanical k₃₃ = 0.78, respectively. All these results indicate that the Eu³⁺-doped PMN-PT ceramics are promising candidates for high-performance room-temperature piezoelectric devices.     

Low‐Temperature Sintering and Electric Properties of Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 Ferroelectric Ceramics with CuO Additive

The low‐temperature sintering and electric properties of Pb_0.99(Zr_0.95Ti_0.05)_0.98Nb_0.02O₃ (PZTN 95/5) ferroelectric ceramics with CuO addition was investigated. The CuO addition significantly promoted the densification and reduced the sintering temperature of PZTN 95/5 ceramics by more than 200°C. The 0.2 wt% CuO‐added sample sintered at 1150°C exhibited the optimum relative density of 96.7% and excellent electric properties with values of P_r = 37.80 μC/cm², T_C = 223°C, ε_r = 329, and tan δ = 0.016, which were superior to that of PZTN 95/5 ceramics sintered at 1350°C.     

Achieving both high electromechanical properties and temperature stability in textured PMN-PT ceramics

Textured piezoelectric ceramics, such as textured Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PMN-PT) ceramics, have attracted considerable attention from both academia and industry, as they possess crystal-like piezoelectric properties, high composition homogeneity, and low manufacturing cost. However, the main difficulty with the textured piezoelectric ceramics is the presence of BaTiO₃ (BT) templates, which greatly reduces their piezoelectricity and phase transition temperature. Thus, it is highly recommended to fabricate textured piezoelectric ceramics using as few templates as possible. Here, we successfully fabricated high-quality <001>-textured PMN-28PT ceramics (texturing degree of 99%) by using an extremely small amount of BT templates (1 vol.%) with the help of CuO/B₂O₃ sintering aids. The textured PMN-28PT ceramic exhibits 80% piezoelectric coefficient (d₃₃ ∼ 1200 pC/N), 96% electromechanical coefficient (k₃₃ ∼ 88%) and the same temperature stability (T_rt ∼ 100, T_c ∼ 150°C) when compared to its single crystal counterpart. In addition, by using an alternating current electric field poling (AC-poling), the piezoelectric coefficient d₃₃ and dielectric permittivity ε₃₃ of the textured PMN-28PT ceramics were further enhanced around 5–8%. It is believed that the advantages of high electromechanical properties, low cost, and easy mass production of textured PMN-28PT ceramic will make it a promising candidate for advanced electromechanical devices.     

Sintering Behavior,Properties, and Applications of Co‐Fired Piezoelectric/Low Temperature Co‐Fired Ceramic (PZT‐SKN/LTCC) Multilayer Ceramics

Materials and processing conditions have been developed allowing co‐firing of fluxed PZT‐SKN materials with commercial low temperature co‐fired ceramic (LTCC) tapes. Previously, Pb(Zr_0.53, Ti_0.47)O₃–Sr(K_0.25, Nb_0.75)O₃ (PZT‐SKN) ceramics fluxed with 1 wt% LiBiO₂ and 1 wt% CuO addition were shown to sinter to high density at 900°C for 1 h, with a large d₃₃ piezoelectric coefficient of ~415 pm/V. Currently, the master sintering curve (MSC) approach has been used to study the densification behaviors of fluxed PZT‐SKN and LTCC tapes. Different sintering mechanisms for fluxed PZT‐SKN ceramics and LTCC materials are confirmed by analyzing the apparent activation energy (Q_a). Using knowledge gained from MSC results, an optimized sintering profile was developed. Multilayer PZT‐SKN/HL2000 (HeraLock^? Tape, Heraeus) stacks co‐fired at 900°C for 0.5 h maintain large piezoelectric coefficient (high field d₃₃ > 340 pm/V). EDS analysis reveal limited interdiffusion of Pb from PZT‐SKN layers in LTCC and the appearance of Al, Ca, and Si in the PZT‐SKN near the PZT‐SKN/LTCC interface. Further, elemental interdiffusion was not detected at the center of piezoelectric layer in PZT‐SKN/LTCC multilayer ceramics and no subsequent reduction in piezoelectric coefficient d₃₃ was observed. Finally, a piezoelectric microbalance with mass sensitivity of 150 kHz/mg was fabricated using the materials and methods developed.     

High-power properties of piezoelectric hard materials sintered at low temperature for multilayer ceramic actuators

0.05Pb(Mn_1/3Sb_2/3)O₃–0.05Pb(Al_1/2Nb_1/2)O₃–0.9Pb(Zr_0.48Ti_0.52)O₃ (PMS–PAN–PZT) high power piezoelectric system with both La₂O₃ as a hardener and CuO as a low sintering agent had been synthesized at 900 °C for 2 h. When La₂O₃ doping of the main composition went over 0.5 wt%, the mixed tetragonal and rhombohedral perovskite structure changed to pure rhombohedral perovskite structure. In case of the CuO, 1.0 and 1.5 wt% CuO content significantly improved the sinterability of the PMS–PAN–PZT system processed at 900 °C for 2 h. When La₂O₃ and CuO co-doped in PMS–PAN–PZT ceramics, piezoelectric constants (d₃₃), quality factor (Q_m), electromechanical coupling factor (k_p) and dielectric constant (${\epsilon }_3^{\text{T}}/{\epsilon }_0$) of the piezoelectric ceramics sintered at 900 °C for 2 h were optimized, such as 336 pC/N, 841, 60%, and 1358, respectively. New developed piezoelectric materials are promising for high power multilayer ceramic actuators.     

Mn- and Mn/Cu-doped PIN-PMN-PT piezoelectric ceramics for high-power transducers

The effects of acceptor doping with manganese as either MnO₂ or MnNb₂O₆ (MnN) with CuO on the dielectric, ferroelectric, and piezoelectric properties of PIN-PMN-PT ceramics were investigated. The 2% MnNb₂O₆-doped PIN-PMN-PT (6Pb(Mn_1/3Nb_2/3)O₃-25Pb(In_1/2Nb_1/2)O₃-34Pb(Mg_1/3Nb_2/3)O₃-35PbTiO₃) ceramics possessed hard properties such as high coercive field (E_C) of 11.7 kV/cm, low dielectric loss (tan δ) of 0.7%, and high electromechanical quality factor (Q_M) of 1011. These properties were diminished in MnO₂-doped ceramics because of lower oxygen vacancy defect concentration, and exaggerated grain growth resulted in >20 µm grain size. Co-doping with 2 mol% MnNb₂O₆ and 0.5 mol% CuO retained hardened properties such as high E_C of 9.6 kV/cm, low tan δ of 0.6%, and high Q_M of 1029. MnNb₂O₆-doped and MnNb₂O₆ + Cu co-doped ceramics display excellent figures of merit for resonance and off-resonance applications as well as high energy conversion efficiencies which make them promising candidates for high-power transducer elements.     

Influences of B2O3/CuO additions on the sintering behavior,microstructure and microwave dielectric properties of 6Nd[(Zn0.7Co0.3)0.5Ti0.5]O3–4(Na0.5Nd0.5)TiO3 ceramics

B₂O₃ and CuO were codoped into 6Nd[(Zn_0.7Co_0.3)_0.5Ti_0.5]O₃–4(Na_0.5Nd_0.5)TiO₃ (abbreviated as 6NZCT–4NNT) ceramics as sintering aids. The influences of the sintering aids on the sintering characteristics, microstructure and microwave dielectric properties of the 6NZCT–4NNT ceramics were systematically investigated as a function of the proportion of B₂O₃ and CuO. Codoping could greatly reduce the sintering temperature from 1410 °C to 1150 °C, indicating that B₂O₃/CuO are good sintering aids for 6NZCT–4NNT ceramics. The B₂O₃/CuO sintering aids had no significant impact on the phase purity of the investigated ceramics, even though a solid solution was formed due to Cu²⁺ ion substitution. However, they had evident influences on the surface morphology and grain size. The average grain size was enlarged with increasing amounts of CuO in the B₂O₃/CuO sintering aids. Remarkable deterioration of the microwave dielectric properties for 6NZCT-4NNT ceramics was not observed when codoping an appropriate amount of B₂O₃ and CuO. The 6NZCT–4NNT ceramics codoped with 2.0 mol% B₂O₃ and 2.0 mol% CuO sintered at 1150 °C for 3 h exhibited a homogeneous microstructure and promising microwave dielectric properties: an appropriate dielectric constant (ε_r = 49.37), a high quality factor (QF = 47,295 GHz), and a near-zero temperature coefficient of resonant frequency (TCF = +0.9 ppm/^°C).     

Low‐Temperature Sintering and Piezoelectric Properties of CuO‐Added KNbO3 Ceramics

Dielectric and piezoelectric properties of CuO‐added KNbO₃ (KN) ceramics were investigated. The CuO reacted with the Nb₂O₅, formed a CuO–Nb₂O₅‐related liquid phase during the sintering, and assisted the densification of the KN ceramics at low temperatures. Moreover, some of the Cu²⁺ ions replaced the Nb⁵⁺ ions in the matrix and behaved as a hardener. The dielectric and piezoelectric properties of the KN ceramics were considerably influenced by the relative density. The 1.0 mol% CuO‐added KN ceramic sintered at 960°C for 1.0 h, which showed a maximum relative density, exhibited a high phase angle of 86.9°, P_r of 14.8 μC/cm², and E_c of 1.8 kV/mm. This specimen also exhibited good dielectric and piezoelectric properties: ε^T₃₃/ε_o of 364, d₃₃ of 122 pC/N, k_p of 0.29, and Q_m of 611.     

High-performance Pb(Ni1/3Nb2/3)O3-PbZrO3-PbTiO3 ceramics with the triple point composition

Ternary 0.552Pb(Ni_1/3Nb_2/3)O₃-xPbZrO₃-(0.448-x)PbTiO₃ (PNN-PZ-PT) ceramics near the triple point compositions were fabricated by an improved two-step sintering method. The triple point composition 0.552PNN-0.135PZ-0.313PT ceramic has outstanding piezoelectric performance with piezoelectric coefficient d₃₃ = 1200 pC/N. Its easy fabrication and low cost make this piezoelectric material an excellent candidate for high sensitivity sensors and ultrasonic transducers. The evolution of domain structures for ceramics with composition near the triple point provides deeper insight into the mechanism of ultrahigh piezoelectric properties of PNN-PZ-PT ceramics.     

Microstructure,Ferroelectric, Piezoelectric,and Ferromagnetic Properties of Sc‐Modified BiFeO3–BaTiO3 Multiferroic Ceramics with MnO2 Addition

0.725BiFe_1?xSc_xO₃–0.275BaTiO₃ + y mol% MnO₂ multiferroic ceramics were fabricated by a conventional ceramic technique and the effects of Sc doping and sintering temperature on microstructure, multiferroic, and piezoelectric properties of the ceramics were studied. The ceramics can be well sintered at the wide low sintering temperature range 930°C–990°C and possess a pure perovskite structure. The ceramics with x/y = 0.01–0.02/1.0 sintered at 960°C possess high resistivity (~2 × 10⁹ Ω·cm), strong ferroelectricity (P_r = 19.1–20.4 μm/cm²), good piezoelectric properties (d₃₃ = 127–128 pC/N, k_p = 36.6%–36.9%), and very high Curie temperature (618°C–636°C). The increase in sintering temperature improves the densification, electric insulation, ferroelectric, and piezoelectric properties of the ceramics. A small amount of Sc doping (x ≤ 0.04) and the increase in the sintering temperature significantly enhance the ferromagnetic properties of the ceramics. Improved ferromagnetism with remnant magnetization M_r of 0.059 and 0.10 emu/g and coercive field H_c of 2.51 and 2.76 kOe are obtained in the ceramics with x/y = 0.04/1.0 (sintered at 960°C) and 0.02/1.0 (sintered at 1050°C), respectively. Because of the high T_C (636°C), the ceramic with x/y = 0.02/1.0 shows good temperature stability of piezoelectric properties. Our results also show that the addition of MnO₂ is essential to obtain the ceramics with good electrical properties and electric insulation.     

Large enhancement of piezoelectric properties and resistivity in Cu/Ta co-doped Bi4Ti3O12 high-temperature piezoceramics

In this study, the electrical properties of Bi₄Ti₃O₁₂-based Aurivillius-type ceramics were tailored by a B-site co-doping strategy combining high valence Ta⁵⁺ and low valence Cu²⁺. A series of Bi₄Ti_3−x(Cu_1/3Ta_2/3)_xO₁₂ (BTCT) (x = 0, 0.005, 0.01, 0.015, 0.02, 0.025, and 0.03) ceramics were prepared by the conventional solid-state reaction method. The effect of Cu/Ta co-doping on the crystal structure, microstructure, dielectric properties, piezoelectric properties, ferroelectric properties, and electrical conductivity of these ceramics was systematically investigated. Co-doping significantly enhanced the piezoelectric properties and DC electrical resistivity of the resulting composites. The optimized comprehensive performances were obtained at x = 0.015 with a large piezoelectric coefficient (34 pC/N) and a relatively high resistivity of 9.02 × 10⁶ Ω cm at 500°C. Furthermore, the ceramic also exhibited stable thermal annealing behaviors and excellent fatigue resistance. The results of this study demonstrated great potential of the Cu/Ta co-doped Bi₄Ti₃O₁₂ ceramics for high-temperature piezoelectric device applications.     

Effects of atmospheric powder on microstructure and piezoelectric properties of PMZN-PZT quaternary ceramics

The effects of atmospheric powder on microstructure and piezoelectric properties of Pb(Mn_1/3Nb_2/3)O₃–Pb(Zn_1/3Nb_2/3)O₃–PbZrO₃–PbTiO₃ (PMZN-PZT) quaternary ceramics were investigated. Specimens with various contents of Pb(Mn_1/3Nb_2/3)O₃ from 0 to 20 mol% were prepared by columbite two-stage process with and without atmospheric powder of PbZrO₃. The results revealed that the atmospheric powder is favored to the liquid-state sintering process in PbO vapor pressure equilibrium. The specimen sintered with atmospheric powder is homogenous and the fracture is intergranular. However, the specimen sintered without atmospheric powder is less homogenous and the fracture is essentially transgranular. On the other hand, the pyrochlore phase was formed along with the perovskite phase for the specimens sintered without atmospheric powder and the second phase was seriously detrimental to the electromechanical properties. The superior piezoelectric properties were observed for the specimens sintered with atmospheric powder. By optimizing the specimen composition, excellent piezoelectric, and dielectric properties (Q_m=2528, K_p=0.55, tan δ=0.003) were obtained at 10 mol% Pb(Mn_1/3Nb_2/3)O₃.     

Effects of CuO addition on the sinterability and electric properties in PbNb2O6-based ceramics

PbNb₂O₆ (PN)-based ceramics with tungsten bronze structure are promising piezoelectric materials in high-temperature devices such as piezoelectric vibration transducers. However, the PN-based ceramics usually exhibit a low bulk density, which greatly limits their practical applications. In this work, CuO was used as the sintering aid to form a liquid-phase bridge, leading to an obvious increase of the bulk density of PN-based ceramics by 11% (from 5.25 to 5.85 g cm⁻³) and the improvement of the piezoelectric constant (d₃₃) (from 168 to 190 pC/N) and the Curie temperature (T_C) from 367 to 395 °C. The positive influence of CuO on densification has been proved by SEM and fracture toughness. The XRD patterns confirmed that there was no secondary phase introduced by CuO addition. The Raman spectra revealed that part of Cu²⁺ ions has probably diffused into host lattice of the PN and preferred to occupy on A-sites. These results not only demonstrate the high potential of the CuO added PN-based ceramics for high-temperature piezoelectric applications, but also reveal the corresponding structure-properties relationship as well as provide a way to improve the sinterability, d₃₃, and T_C simultaneously.     

Effects of CuO addition on the structure and electrical properties of low temperature sintered Ba(Zr,Ti)O3 lead-free piezoelectric ceramics

CuO-doped Ba(Zr_0.05Ti_0.95)O₃ (BZT) ceramics were prepared using conventional solid state reaction method, and their structure and electrical properties were investigated. It was found that a small amount of CuO could lower the sintering temperature significantly and make their microstructure more densified than pure BZT. The ceramics with 1.2 mol% CuO, sintered at 1250 °C, showed excellent piezoelectric properties with d₃₃~320 pC/N and k_p=44%. The sintering temperature was decreased by 150 °C than that for pure BZT ceramics while showing comparable piezoelectric properties. Moreover, the influence of sintering temperature on the optimally 1.2 mol% CuO-doped BZT ceramics was studied. With the temperature change, different patterns of crystal growth were observed in the doped BZT ceramics. When the sintering temperature increased from 1200 °C to 1350 °C, the patterns of normal–abnormal–normal grain growth were changed accordingly.     

Piezoelectric properties of (Na1−xKx)NbO3‐based lead‐free piezoelectric ceramics and their application in knocking sensor

Piezoelectric knocking sensors with a dense microstructure were fabricated at 960°C for 2 hours using various CuO‐added (Na_0.5K_0.5)NbO₃ (NKN)‐based piezoelectric ceramics. The practical sensitivity (S_P) of the knocking sensor, which is the ability to detect the knocking of a car engine, was influenced by the g₃₃ × k_p value of the piezoelectric ceramics, indicating that the g₃₃ × k_p can be considered a figure of merit of the piezoelectric ceramics used in the knocking sensor. The knocking sensor synthesized using the CuO‐added 0.95(Na_0.5K_0.5)(Nb_0.95Sb_0.05)O₃–0.05CaTiO₃ (CNKNS–CT) ceramic, which showed a g₃₃ of 25.7 Vm/N and k_p of 0.46, exhibited a high S_P of 119 mV/g at the resonance frequency. The S_P of the commercial knocking sensor, which was synthesized using the Pb(Zr,Ti)O₃ (PZT)‐based ceramic, was 112 mV/g at the resonance frequency. Hence, the knocking sensor fabricated using the CNKNS–CT piezoelectric ceramic can be used to replace the commercial PZT‐based knocking sensor.