Kr ion irradiation study of polymer-derived SiFeOC–C–SiC nanocomposite

This study focuses on the pyrolysis and ion irradiation behaviors of polymer-derived SiFeOC–C–SiC ceramic. The pyrolyzed material is composed of SiO₂ and SiOC (amorphous), carbon (amorphous and turbostratic), and Fe₃Si and β-SiC (nanocrystalline). Irradiation was carried out at both room temperature and 600°C using 400 keV Kr ions with fluences of 4 × 10¹⁵ and 1 × 10¹⁶ ions cm⁻², respectively. The Fe₃Si and SiC nanocrystals are stable against irradiation up to 3 displacement per atom (dpa) at room temperature and up to 12 dpa at 600°C. The SiOC tetrahedrals show phase separation and minor carbothermal reduction. The high irradiation resistance and the dense, defect-free amorphous microstructure of SiFeOC–C–SiC after prolonged irradiation demonstrate its great potential for advanced nuclear reactor applications.     

Role of structural ordering on the radiation response of Gd2Zr2O7 pyrochlore

Complex oxides with pyrochlore and fluorite phases offer several advantages for the Immobilization of actinides or high-level radioactive wastes. In this report, we present the different behavior of structural ordering/crystallinity of Gd₂Zr₂O₇ (GZO) ceramics upon sintering at two different temperatures (1400°C–1500 °C). XRD and Raman spectroscopy studies revealed the enhancement of structural ordering/crystallinity with the increase of sintering temperature. Further, the ion irradiation experiments using 100 MeV iodine at the fluence of 1.0 × 10¹⁴ ions/cm² were performed to investigate the radiation effects on both GZO ceramics. The irradiation studies insinuate that the GZO ceramic sintered at 1500 °C possesses relatively better radiation resistance than GZO ceramic sintered at 1400 °C. The variation in the radiation resistance response of GZO ceramics seems associated with the different degrees of structural ordering. These results suggest the role of structural ordering in the radiation resistance response of GZO ceramics. The relatively better radiation tolerance of GZO15 ceramic with some extant pyrochlore phase ordering may be suitable for applications in harsh environments.     

Structural integrity and damage of glass-ceramics after He ion irradiation: Insights from ZrO2-SiO2 nanocrystalline glass-ceramics

Developing new radiation-resistant materials and understanding the structural damages caused by radiation are persistent goals of material scientists. Here, we report on the structural integrity and damage to ZrO₂-SiO₂ nanocrystalline glass-ceramics after radiation with 1.4 MeV He ions at three different fluences: 1.0 × 10¹⁶ ions/cm² (low), 5.0 × 10¹⁶ ions/cm² (moderate), and 1.0 × 10¹⁷ ions/cm² (high) at 500 °C. Grazing incident X-ray diffraction shows the tetragonal-ZrO₂ to monoclinic-ZrO₂ phase transformation induced by microstrain from the irradiation. The addition of yttrium indicated tetragonal-ZrO₂ stabilization effect during irradiation. The irradiated glass-ceramics show a Raman signal-enhancement effect probably related to the electronic structure changes of the amorphous SiO₂ component in the glass-ceramics. The formation of microcracks and lattice defects within ZrO₂ nanocrystallites is the main structural damage caused by irradiation. There was no observable amorphization of ZrO₂ nanocrystallites due to irradiation. No obvious He bubbles were detected, either. The formation of microcracks results in a decrease of in the nanohardness of the glass-ceramics. The results provide fundamental experimental data to understand the structural integrity and damage caused by radiation, which could be useful to design radiation‐resistant nanocrystalline glass-ceramics for extremely radioactive environments.     

Modifications in the structural,morphological, optical properties of Ag45Se40Te15 thin films by proton ion irradiation for optoelectronics and nonlinear applications

This current work reports the 30 keV proton ion irradiation induced structural, morphological, and optical properties change in Ag₄₅Se₄₀Te₁₅ films at different fluences. The thin films were irradiated with different ion fluences, such as 5 × 10¹⁵ ions/cm²,1 × 10¹⁶ ions/cm² and 5 × 10¹⁶ ions/cm². The electronic loss (S_e) dominates over the nuclear loss (S_n) in proton irradiation. The X-ray diffraction study shows the phase transformation from amorphous to crystalline upon ion irradiation. The Raman analysis confirms the change in chemical and vibrational bonds due to structural alterations in the films. The surface morphology has been studied by field emission scanning electron microscopy and the composition of the films has been checked by the energy dispersive X-ray analysis. The particle size increased upon the increase in ion irradiation fluence. The surface roughness of the films has been studied by atomic force microscopy. The transmission data is used to calculate the linear optical parameters. The absorption edge shifts towards the high wavelength region inferring the reduction in the optical bandgap. The linear refractive index of the films increased with ion fluence. The optical density increased at the high wavelength region while the skin depth decreased with fluence. The carrier concentration per effective mass decreased while the plasma frequency increased with proton irradiation. The nonlinearity (χ ⁽³⁾ and n₂) values increased significantly with the increase in fluences. Such kind of materials with optimization in their optical parameters are primarily essential for cutting-edge photonic, optoelectronic, and nonlinear optical applications.     

Helium irradiation effects on MgO-Nd2Zr2O7 composite ceramics prepared by one-step method used for inert matrix fuel

In this work, the helium irradiation effects were systematically investigated on MgO-Nd₂Zr₂O₇ (hereafter M-NZO) composite ceramics used for inert matrix fuel, in which the ion fluences range from 5 × 10¹⁶ to 3 × 10¹⁷ ions/cm² at room temperature. It was demonstrated that M-NZO composite ceramic shows superior radiation tolerance after He implantation. Specifically, MgO had almost no phase transition and extensive amorphization. And Nd₂Zr₂O₇ phase possessed slightly pyrochlore-fluorite-amorphization structural transformation, while part of Nd₂Zr₂O₇ maintained the ordered pyrochlore structure and co-existed with the irradiation-induced disordered fluorite structure. Importantly, GIXRD results indicated that MgO phase presents higher resistance to radiated damage than Nd₂Zr₂O₇ phase. Besides, SEM images illustrated that MgO particles have substantially less fragmentation than Nd₂Zr₂O₇ particles due to the higher thermal conductivity of MgO. It reconfirmed that MgO phase resists irradiation damage better than Nd₂Zr₂O₇ phase in post-irradiated M-NZO composite ceramics.     

Atomic order-disorder engineering in the La2Zr2O7 pyrochlore under low energy ion irradiation

Cation and anion disordering affect the structural and electronic properties of the isometric A₂B₂O₇ pyrochlore materials. Here, we report a study on the structural response of La₂Zr₂O₇ at two different temperatures (300 K and ~88 K) as a function of ion fluence (1 × 10¹³, 5 × 10¹³, and 1 × 10¹⁴ ions/cm²). The effect of ion fluence and irradiation temperature on the structural properties have been investigated using the grazing angle x-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy. GIXRD results confirmed that the weakening/broadening of the diffraction peaks and lattice volume expansion increases monotonically as a function of ion fluence at both the temperatures and are more pronounced at ~88 K. The cation and anion disordering appear to be ion fluence and irradiation temperature-dependent. Raman spectroscopy shows that the atomic disordering is more pronounced with enhanced ion fluence and revealed the involvement of the X_48f parameter in the enhancement of disordering in the system. The HRTEM analysis revealed that the deterioration in the atomic ordering (amorphization) is significantly more pronounced at ~88 K. The qualitative analysis of cation/anion disordering and structural deformation revealed that irradiation parameters play a crucial role in developing and altering the properties of the pyrochlore materials for the technological applications.     

He irradiation-induced lattice distortion and surface blistering of Gd2Zr2O7 defect-fluorite ceramics

Gd₂Zr₂O₇ ceramics with different grain sizes ranging from nanoscale to submicron scale (91, 204, and 634 nm) were irradiated at room temperature using 190 keV He ions with doses ranging from 5 × 10¹⁶ to 5 × 10¹⁷ ions/cm². We fully characterized the pre- and post-irradiation samples using grazing-incidence X-ray diffraction (GIXRD), scanning electron microscope (SEM), and atomic force microscope (AFM) as the grain size and degree of irradiation vary. The results suggested that all three Gd₂Zr₂O₇ samples demonstrate outstanding radiation tolerance to displacement damage by retaining their crystallinity after irradiation at 5 × 10¹⁷ ions/cm². which is equal to 16 displacement per atom (dpa) at peak positions. Although lattice expansion was observed at a He irradiation at 5 × 10¹⁶ ions/cm² and beyond, the lattice remained stable for the nanograin ceramic, while the degree of distortion for the sample with the largest grain size (634 nm) continuously increased. Moreover, a delayed He bubble evolution process was seen for the nanograin ceramic, which did not appear for the submicron-grained sample. Interestingly, the grain size-dependent surface blistering was also found to be a function of ion fluence. After He irradiation at 5 × 10¹⁷ ions/cm² the AFM root-mean-square(RMS) roughness variation for Gd₂Zr₂O₇ ceramics of 91, 204, and 634 nm were 4.8, 7.0, and 11.1 nm, respectively.     

Fabrication of highly efficient TiO2/Ag/TiO2 multilayer transparent conducting electrode with N ion implantation for optoelectronic applications

Fabrication of highly conductive and transparent TiO₂/Ag/TiO₂ (referred hereafter as TAT) multilayer films with nitrogen implantation is reported. In the present work, TAT films were fabricated with a total thickness of 100 nm by sputtering on glass substrates at room temperature. The as-deposited films were implanted with 40 keV N ions for different fluences (1×10¹⁴, 5×10¹⁴, 1×10¹⁵, 5×10¹⁵ and 1×10¹⁶ ions/cm²). The objective of this study was to investigate the effect of N⁺ implantation on the optical and electrical properties of TAT multilayer films. X-ray diffraction of TAT films shows an amorphous TiO₂ film with a crystalline peak assigned to Ag (111) diffraction plane. The surface morphology studied by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) revealed smooth and uniform top layer of the sandwich structure. The surface roughness of pristine film was 1.7 nm which increases to 2.34 nm on implantation for 1×10¹⁴ ions/cm² fluence. Beyond this fluence, the roughness decreases. The oxide/metal/oxide structure exhibits an average transmittance ~80% for pristine and ~70% for the implanted film at fluence of 1×10¹⁶ ions/cm² in the visible region. The electrical resistivity of the pristine sample was obtained as 2.04×10⁻⁴ Ω cm which is minimized to 9.62×10⁻⁵ Ω cm at highest fluence. Sheet resistance of TAT films decreased from 20.4 to 9.62 Ω/□ with an increase in fluence. Electrical and optical parameters such as carrier concentration, carrier mobility, absorption coefficient, band gap, refractive index and extinction coefficient have been calculated for the pristine and implanted films to assess the performance of films. The TAT multilayer film with fluence of 1×10¹⁶ ions/cm² showed maximum Haacke figure of merit (FOM) of 5.7×10⁻³ Ω⁻¹. X-ray photoelectron spectroscopy (XPS) analysis of N 1s and Ti 2p spectra revealed that substitutional implantation of nitrogen into the TiO₂ lattice added new electronic states just above the valence band which is responsible for the narrowing of band gap resulting in the enhancement in electrical conductivity. This study reports that fabrication of multilayer transparent conducting electrode with nitrogen implantation that exhibits superior electrical and optical properties and hence can be an alternative to indium tin oxide (ITO) for futuristic TCE applications in optoelectronic devices.     

Phase‐dependent radiation‐resistant behavior of BaTiO3: An in situ X‐ray diffraction study

The radiation‐resistant response of BaTiO₃ in the tetragonal and rhombohedral phases on exposure to 100 MeV Ag⁷⁺ ion irradiation was investigated by in situ X‐ray diffraction (XRD) at room temperature (300 K) and low temperature (25 K), respectively. This study revealed that the BaTiO₃ in rhombohedral phase retained crystallinity up to an ion fluence of 1×10¹⁴ ions/cm², whereas tetragonal phase amorphized at much lower fluence viz. 1×10¹³ ions/cm². The in situ XRD along with Raman spectroscopy studies revealed that BaTiO₃ in rhombohedral phase is more radiation resistant than that of tetragonal phase. The density functional theory (DFT) calculations confirmed higher bond strength of rhombohedral phase as compared to tetragonal phase, which supported the experimental result of higher radiation stability of rhombohedral phase. The theoretical predictions on high‐temperature phase will be of relevance to the nuclear waste applications.     

Increase the current density and reduce the defects of ZnO by modification of the band gap edges with Cu ions implantation for efficient,flexible dye-sensitized solar cells (FDSSCs)

Flexible dye-sensitized solar cells (FDSSCs) have good potential in future photovoltaic technology. The spin coating method deposited the ZnO films on indium-tin-oxide-coated polyethylene terephthalate (ITO-PET) flexible plastic substrates. These films are implanted with Cu-ions with 1 × 10¹³ ions/cm², 1 × 10¹⁴ ions/cm², and 1 × 10¹⁵ ions/cm². All the films have a hexagonal structure. The film irradiated with 1 × 10¹⁴ ions/cm² showed high crystallinity and crystallite size. Important optical properties like bandgap energy (E_g), band edges, refractive index, extinction coefficient, and dielectric constants are measured by UV–Vis spectroscopy. Bandgap energy decreases, and the refractive index increases at the fluence of Cu ions. The maximum decrease in E_g is observed at the 1 × 10¹⁴ ions/cm² dose. Photoluminescence spectra suggest that defects-related emission peaks are decreased at 1 × 10¹⁴ ions/cm² Cu ions fluency. J-V measurements have significantly improved photovoltaic performance compared to pristine ZnO-based solar cells. The highest efficiency (2.30%) is observed at a 1 × 10¹⁴ ions/cm² dose. The efficiency increase is related to improving the charge transfer ratio and shifting the fermi level toward the conduction band.     

Effects of heavy-ion irradiation on Gd2Zr2O7 bearing simulated TRPO waste

Considering the urgent demand of nuclear waste disposal, a comprehensive study on the irradiation performance of nuclear waste forms is extremely necessary, especially on those containing multiple-nuclides with multiple-valence. The irradiation effects of Gd₂Zr₂O₇ pyrochlore bearing simulated trialkyl phosphine oxides (TRPO) waste (consisting of ZrO₂, MoO₃, RuO₂ and PdO) were studied in this work. Gd_10.685Mo_4.734Zr_28.924Ru_1.000Pd_1.745O_91.825 and Gd_8.883Mo_9.901Zr_33.760Ru_2.089Pd_3.644O_118.368 were irradiated by 1.5?MeV Xe²⁰⁺ to fluences from 1?×?10¹² to 1?×?10¹⁵ ions/cm² at room temperature. The results showed an irradiation induced disordering with slight micro-swelling. In addition, the ion irradiation tolerance of the solid solutions decreased as the TRPO waste content increased. The decrease and shift of Raman peaks indicated the structural disordering and inner stress after irradiation. The micromorphology and element distribution of the irradiated surface remained almost unchanged. The structural evolution from pyrochlore to fluorite and even amorphous structure were disclosed in this study.     

Differentiated Electric Behaviors of La2/3Cu3Ti4O12 Ceramics Prepared by Different Methods

Microstructure and electric behaviors of La_2/3Cu₃Ti₄O₁₂ (LCTO) ceramics prepared by the sol‐gel method (SG) and solid‐state method (SS) have been systemically investigated. The results indicated that LCTO‐SG ceramics sintered at 1105°C for 15 h showed larger grain size, higher density, and especially higher dielectric constant up to about 0.9–1.6 × 10⁴ at 10²~10⁵ Hz compared to LCTO‐SS ceramics. The higher dielectric constant of the LCTO‐SG ceramics might be due to the stronger internal barrier layer capacitor (IBLC) effect. More notably, compared with LCTO‐SS ceramics, two kinds of dielectric anomalies, one conduction activation energy value and same activation energies for the conduction and relaxation process in LCTO‐SS ceramics, the LCTO‐SG ceramics showed three kinds of dielectric anomalies, two values of conduction activation energy, and decrease in conduction activation energy with increasing temperature. The activation energies for the conduction and relaxation process in LCTO‐SG ceramics showed great difference below about 210°C, suggesting that the mechanism of electrical conduction and dielectric relaxation seem to be different in LCTO‐SG ceramics. These remarkable differences in electric behaviors of LCTO ceramics prepared by sol‐gel and solid‐state methods were firstly found and analyzed.     

Oxygen vacancy enhanced room temperature ferromagnetism in Ar+ ion irradiated WO3 films

Room-temperature ferromagnetism in WO₃ films was enhanced by 130 keV Ar⁺ ion irradiation. The X-ray diffraction (XRD) and Raman measurements not only confirmed the monoclinic phase of the irradiated WO₃ films, but also showed that oxygen vacancy (V_O) defects were formed. The analysis of photoluminescence spectra strongly reconfirmed the presence of oxygen vacancy. X-ray photoelectron spectroscopy (XPS) measurements revealed that the contents of V_O and induced W⁵⁺ ions increase with increasing irradiation fluence and rich W⁵⁺-V_O defect complexes in the irradiated WO₃ films were formed. Further, the magnetic measurements exhibited a 2-fold enhancement in the saturation magnetization at the largest fluence of 3 × 10¹⁶ ions/cm². At lower irradiation fluence, a bound magnetic polaron model was proposed to reveal the ferromagnetic exchange coupling resulting from overlapping of V_O⁺ and V_O⁺⁺ defect states, and 5d¹ states of W⁵⁺. At high irradiation fluence, the carrier concentration reaches 1.02 × 10²⁰/cm³ and carrier-mediated exchange interactions result in the film's ferromagnetism.     

Preparation,microstructure and ion-irradiation damage behavior of Al4SiC4-added SiC ceramics

Single-phase Al₄SiC₄ powder with a low neutron absorption cross section was synthesized and mixed with SiC powder to fabricate highly densified SiC ceramics by hot pressing. The densification of SiC ceramics was greatly improved by the decomposition of Al₄SiC₄ and the formation of aluminosilicate liquid phase during the sintering process. The resulting SiC ceramics were composed of fine equiaxed grains with an average grain size of 2.0 μm and exhibited excellent mechanical properties in terms of a high flexure strength of 593 ± 55 MPa and a fracture toughness of 6.9 ± 0.2 MPa m^1/2. Furthermore, the ion-irradiation damage in SiC ceramics was investigated by irradiating with 1.2 MeV Si⁵⁺ ions at 650 °C using a fluence of 1.1 × 10¹⁶ ions/cm², which corresponds to 6.3 displacements per atom (dpa). The evolution of the microstructure was investigated by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The breaking of Si–C bonds and the segregation of C elements on the irradiated surface was revealed by XPS, whereas the formation of Si–Si and C–C homonuclear bonds within the Si–C network of SiC grains was detected by Raman spectroscopy.     

Irradiation response of Al2O3-ZrO2 ceramic composite under He ion irradiation

The dense Al₂O₃-ZrO₂ ceramic composite prepared by spark plasma sintering was irradiated by 500 keV He ions with different fluences and temperatures. The microstructural evolution and mechanical properties were investigated. The results showed that peak broadening and shifts at RT revealed by GIXRD and Raman are associated with damage induced microstrain and formation of point defects. The recovery at 500 °C suggested the reduction of irradiation induced damage. Compared with α-Al₂O₃, t-ZrO₂ exhibited a reverse trend in lattice parameters change and lattice expansion. Many helium bubbles with oblate and ribbon-like shape were mainly formed in α-Al₂O₃ grains at He concentration peak at 1.0 × 10¹⁷ ions/cm². With increasing of fluence at RT, ribbon-like helium bubbles developed into microcracks at 4.0 × 10¹⁷ ions/cm². Though evident structural changes, no full amorphization was observed at 4.0 × 10¹⁷ ions/cm². Formation of ribbon-like bubbles and microcracks is the main mechanism for degradation of mechanical properties of irradiated Al₂O₃-ZrO₂ composite.     

Gradual modification of the YSZ structures by Au ion implantation and high-energy Si ion irradiation

Gold nanoparticles (Au-NPs) were created in crystalline yttria-stabilized zirconia (YSZ). (100)-, (110)- and (111)-oriented YSZ samples were implanted by 1 MeV Au⁺ ions at room temperature and fluences ranging from 1.5 × 10¹⁶ cm⁻² to 7.5 × 10¹⁶ cm⁻². The prepared Au: YSZ structures were annealed at 1100 °C for 1 h on air to support the Au-NPs coalescence and YSZ structure recovery. Subsequent irradiation with the 10 MeV Si³⁺ ions with a fluence of 5.0 × 10¹⁴ cm⁻² was performed to enable gradual modification of Au-NPs. Au-depth profiles and YSZ structure modification in the produced samples were analysed via Rutherford backscattering spectrometry in channelling mode (RBS-C) and X-ray diffraction (XRD). RBS-C showed the gold distributed in the region of about 50–300 nm below the YSZ surface. The disorder was accumulated in the region with Au-NPs and the concentration of the disorder increases as a function of ion implantation fluence. The Zr-disorder was partially decreased after the annealing, while the subsequent Si-ion irradiation increased Zr-disorder again, however, the disorder does not reach values before the annealing. XRD measurement evidenced elastic deformation of the YSZ host lattice in the Au-implanted samples. Optical absorbance showed the appearance of the new absorption band at 550 nm for the Au-ion fluences above 5.0 × 10¹⁶ cm⁻² ascribed to the Au-NPs formation. After the annealing, the absorption band is shifted to the wavelength of 580 nm which could be connected to the proceeding clustering of Au. The maximum absorption peak intensity increases which is connected to the increasing amount of the Au-NPs. Transmission electron microscopy (TEM) with Energy dispersive spectroscopy (EDS) confirmed the presence of Au-NPs in the implanted layer after the annealing. The subsequent Si-ion irradiation did not change the Au-NP shape which remained spherical with a slight size increase.     

Controlled disorder for the Yb2Ti2-xO7-2x (x = 0 to 1) series and corresponding radiation tolerance

The use of ceramics as radionuclide containment matrices for the safe long-term storage and disposal of high-level nuclear waste is studied with emphasis on chemistry flexibility, structural stability, and radiation tolerance. Here we investigate the flexibility of a particular series of compounds Yb₂Ti_2-xO_7-2x (x = 0, 0.2, 0.52, 0.8, and 1) to form a solid solution between the end members Yb₂Ti₂O₇ of pyrochlore structure through to Yb₂TiO₅ of fluorite structure. Whilst it is shown that cation disorder and corresponding transition from the ordered pyrochlore to disordered fluorite is facilitated via increasing the ytterbium to titanium ratio, it is also shown that sintering conditions may be controlled in such a way as to encourage the growth of the pyrochlore structure even in Yb₂TiO₅. The radiation response of these materials was tested in situ via 1 MeV krypton irradiation coupled with transmission electron microscopy characterisation. The critical fluence of ions required to transition the crystalline phase to amorphous was found to increase with increasing disorder from Yb₂Ti₂O₇ to Yb₂TiO₅. However, of the two forms (pyrochlore and fluorite) of Yb₂TiO₅ studied via ion irradiation that with the greater pyrochlore structure and so more ordered also had the lower critical temperature, 434 K, for maintaining crystallinity during irradiation.     

Structure evolution,thermal properties and sintering resistance of promising thermal barrier coating material La2(Zr0.75Ce0.25)2O7

Rare-earth doped zirconates are promising candidate materials for high-performance thermal barrier coatings (TBCs). The phase and microstructure stability is an important issue for the materials that must be clarified, which is related to the long-term stable work of TBCs at high temperatures. In this work, La₂(Zr_0.75Ce_0.25)₂O₇ (LCZ) ceramic coatings prepared by atmospheric plasma spraying present a metastable fluorite phase, which can transform into stable pyrochlore under high-temperature annealing. The detailed structure evolution of the ceramic coatings is characterized systematically by SEM, XRD and Raman. The associated thermal properties of LCZ ceramics were also reported. Results show that LCZ ceramic has an ultralow thermal conductivity (0.65 W/m·K, 1200 °C), which is only 1/3 of that of yttria-stabilized zirconia (YSZ). The thermal expansion coefficients of LCZ ceramic increase from 9.68 × 10^-6 K^-1 to 10.7 × 10^-6 K^-1 (300 - 1500 °C), which are relatively larger than those of La₂Zr₂O₇. Besides, Long-term sintering demonstrates that LCZ ceramic coating has preferable sintering resistance at 1500 °C, which is desirable for TBC applications.     

Proton‐induced crosslinking of CR 6‐2 polycarbonate

CR 6‐2 polycarbonate samples were irradiated using different fluences (10¹¹–10¹⁴ ions/cm²) of 1 MeV protons. The structural modifications in the proton‐irradiated CR 6‐2 samples have been studied as a function of fluence using different characterization techniques such as X‐ray diffraction, intrinsic viscosity of the liquid samples, as a measure of the mean molecular mass, Fourier transform infrared spectroscopy, thermogravimetric analysis, differential thermal analysis, refractive index, color difference, and mechanical properties. The results indicate that the irradiation of CR 6‐2 detector at the fluence range 1 × 10¹²–5 × 10¹⁴ ions/cm² causes intermolecular crosslinking and allows the formation of covalent bonds between different chains, leading to a more compact structure of CR 6‐2 polymer, which resulted in an improvement in its thermal, optical, and mechanical properties. Also, this crosslinking reduces the ordering structure and increases the amorphous regions that enhance the polymer resilience. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009     

Annealing effects on the structure and hardness of helium-irradiated Cr2AlC thin films

Cr₂AlC MAX phase thin films prepared by radio-frequency magnetron sputtering were irradiated at room temperature by 100 keV helium ions to a fluence of 1 × 10¹⁷ ions cm⁻². The effects of thermal annealing on the structural and mechanical properties of the helium-irradiated Cr₂AlC films as well as the helium release were investigated by grazing-incidence X-ray diffraction (GIXRD), Raman spectroscopy, and scanning electron microscope (SEM) in combination with nano-indentation and elastic recoil detection (ERD) analysis. The irradiation-induced structural damage in the Cr₂AlC is significantly recovered by thermal annealing at temperatures around 600℃, attributed to high defect diffusivity. After annealing to 750℃, the hardness of irradiated films recovered almost completely, which is ascribes to both defect recombination and reformation of damaged chemical bonds. Substantial helium release occurring at this annealing temperature is closely related to the damage recovery due to helium irradiation.