Synthesis of BaCu(B2O5) Ceramics and their Effect on the Sintering Temperature and Microwave Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Ceramics

BaCu(B₂O₅) ceramics were synthesized and their microwave dielectric properties were investigated. BaCu(B₂O₅) phase was formed at 700°C and melted above 850°C. The BaCu(B₂O₅) ceramic sintered at 810°C had a dielectric constant (ɛ_r) of 7.4, a quality factor ( Q × f ) of 50 000 GHz and a temperature coefficient of resonance frequency (τ_f) of −32 ppm/°C. As the BaCu(B₂O₅) ceramic had a low melting temperature and good microwave dielectric properties, it can be used as a low-temperature sintering aid for microwave dielectric materials for low temperature co-fired ceramic application. When BaCu(B₂O₅) was added to the Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramic, BZN ceramics were well sintered even at 850°C. BaCu(B₂O₅) existed as a liquid phase during the sintering and assisted the densification of the BZN ceramic. Good microwave dielectric properties of Q × f =16 000 GHz, ɛ_r=35, and τ_f=22.1 ppm/°C were obtained for the BZN+6.0 mol% BaCu(B₂O₅) ceramic sintered at 875°C for 2 h.     

Raman Spectroscopic Study of Gallium-Doped Ba(Zn1/3Ta2/3)O3

Resonators of Ba(Zn_1/3Ta_2/3)O₃, sintered between 1450° and 1600°C, are characterized by Raman spectroscopy, X-ray diffraction, and scanning electron microscopy. The quality factors of the resonators are found to depend on sintering temperature, and at 1600°C there is evidence of Zn loss from the surface. The frequency of the A_1g Raman mode changes from 800.9 cm⁻¹ for a sample with Q = 80000 (2 GHz), to 794.5 cm⁻¹ when Q = 44000 (2 GHz). Changes in the position of this and other Raman modes are thought to be due to distortions of the oxygen octahedra, brought about by Zn loss. The presence of a BaTa₂O₆ phase at the surface is confirmed by XRD and SEM.     

Discontinuous Dissolution of a Liquid Phase in Ba(Ni1/3Nb2/3)O3 Ceramics

Discontinuous dissolution of a liquid phase accompanied by diffusion-induced grain-boundary migration (DIGM) in Ba(Ni_1/3Nb_2/3)O₃ (BNN) ceramics has been studied. When the liquid-phase-sintered BNN specimens are heat-treated at low temperatures, the liquid phase formed during sintering is dissolved discontinuously and during the reaction grain boundaries migrate. As the heat-treatment temperature is lowered, the degree of grain boundary migration and dissolution of the liquid phase increase. These results are qualitatively consistent with the coherency strain energy model proposed for the driving force for DIGM.     

Probing of 1:2 Ordering in Ba(Ni1/3Nb2/3)O3 and Ba(Zn1/3Nb2/3)O3 Ceramics by XRD and Raman Spectroscopy

The 1:2 ordering in Ba(Ni_1/3Nb_2/3)O ceramics sintered at 1350-1500°C has been investigated by using XRD and Raman spectroscopy. Both of the techniques show that the degree of the 1:2 ordering decreases as the sintering temperature increases. However, XRD discerns the 1:2 ordering only for the samples sintered at 1350-1400°C, whereas Raman spectroscopy discerns the 1:2 ordering for all the samples. Similar results have been obtained for Ba(Zn_1/3Nb_2/3)O₃ ceramics, where only the temperature range is slightly different. It is demonstrated that Raman spectroscopy can be a useful tool for probing of the 1:2 ordering in the A(B'^II_1/3B"^V_2/3)O₃-type complex perovskite compounds.     

Atomic Resolution Transmission Electron Microscopy of the Microstructure of Ordered Ba(Cd1/3Ta2/3)O3 Perovskite Ceramics

Microstructures of ordered Ba(Cd_1/3Ta_2/3)O₃ perovskite dielectric ceramics with and without a boron additive have been observed by atomic resolution transmission electron microscopy (TEM). The selected area electron diffraction and lattice image show a well-ordered structure with hexagonal symmetry (lattice constants of a ∼5.8 Å and c ∼7.1 Å) in the ordered Ba(Cd_1/3Ta_2/3)O₃ with a boron additive, which is similar to those in ordered Ba(Zn_1/3Ta_2/3)O₃ and Ba(Mg_1/3Ta_2/3)O₃ ceramics. Ordered domains with a twin crystallographic relationship and high-density domain interfaces induced by ordering were observed in the ordered Ba(Cd_1/3Ta_2/3)O₃ without a boron additive sintered at a relatively high temperature. Atomic resolution TEM further revealed the conservative twin boundaries along (001) and (110) planes and non-conservative antiphase boundaries with a projected displacement vector of the type [001] in the ordered Ba(Cd_1/3Ta_2/3)O₃ without a boron additive. Finally, the energetics of different domain interfaces are discussed with the interfacial structures in ordered Ba(Cd_1/3Ta_2/3)O₃ ceramics revealed by an electron microscope.     

Effects of Stacking Scheme on Microwave Dielectric Characteristics of Ca(Mg1/3Nb2/3)O3–Ba(Zn1/3Nb2/3)O3 Layered Dielectric Resonators

Ca(Mg_1/3Nb_2/3)O₃ (CMN) and Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramic disks were stacked with three stacking schemes, designated as CMN/BZN, CMN/BZN/CMN, and BZN/CMN/BZN, to yield layered dielectric resonators, and the microwave dielectric characteristics were evaluated with the TE_01δ mode. Both experiments and finite element analysis showed that the microwave dielectric characteristics of the layered resonator were determined not only by the volume fraction of BZN but also by the stacking scheme. For each stacking scheme, a good combination of microwave dielectric characteristics with an effective dielectric constant of 34.33–34.52, a Q × f value of 58 800–62 080 GHz, and a near-zero temperature coefficient of resonant frequency could be achieved by adjusting the volume fraction of BZN. The effects of the stacking scheme on the microwave dielectric characteristics of the temperature-stable layered resonator were discussed by combining finite element analysis and dielectric composite models.     

Dielectric Properties of Ceramics in Ba (Co1/3 Nb2/3)O3–Ba(Zn1/3Nb2/3)O3 Solid Solution

The dielectric properties of the Ba (Co_1/3 Nb_2/3)O₃–Ba(Zn_1/3Nb_2/3)O₃ system were determined. Ba (Co_1/3 Nb_2/3)O₃–Ba(Zn_1/3Nb_2/3)O₃ has a complex perovskite structure, a high dielectric constant, a low dielectric loss, and a low temperature coefficient of the resonant frequency. A solid-solution ceramic with 0.7Ba (Co_1/3 Nb_2/3)O₃·0.3 Ba(Zn_1/3Nb_2/3)O₃ has a dielectric constant of K=33.5, Q=11000 at 6.5 GHz, and a temperature coefficient of the resonant frequency of τ_f=0 ppm/°C. The temperature coefficient of resonant frequency can be varied by changing the composition. The Q values of the ceramics can be increased by annealing in a nitrogen atmosphere. These ceramics can be used for resonant elements and stabilized oscillators.     

Structural and Electrical Properties of Lead-Free Perovskite Ba(Al1/2Nb1/2)O3

Lead-free perovskite Ba(Al_1/2Nb_1/2)O₃ was prepared by conventional ceramic fabrication technique at 1350°C/5 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software whereas crystallite size and lattice strain were estimated from Williamson-Hall approach. X-ray diffraction analysis of the compound indicated the formation of a single-phase monoclinic structure with the space group P 2/ m . EDAX and SEM studies were carried out in order to evaluate the quality and purity of the compound. Permittivity data showed low-temperature coefficient of capacitance ( T _CC=14%) up to 100°C. To find a correlation between the response of the real system and idealized model circuit composed of discrete electrical components, the model fittings were presented using the impedance data. Complex impedance analyses suggested the dielectric relaxation to be of non-Debye type. The correlated barrier-hopping model was used to successfully explain the mechanism of charge transport in Ba(Al_1/2Nb_1/2)O₃.     

Effect of Grain Size on Diffusion-Induced Grain-Boundary Migration in Ba(Zn1/3Nb2/3)O3 Ceramics

Diffusion-induced grain-boundary migration (DIGM) in Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramics was investigated with small (3.0 μm) and large (31. 4 μm) grain size specimens. The specimens were embedded in Nb₂O₅ or ZnO powders and then heat-treated at 1250° and 1310°C, respectively. The grain boundaries of the small grain size specimens were immobile, while those of the large grain size specimens migrated away from their centers of curvature. From the observed difference in migration behavior depending on grain size, the magnitude of the driving force for the DIGM was estimated.     

B-Site Order–Disorder Transition in Pb(Mg1/3Nb2/3)O3–Pb(Mg1/2W1/2)O3 Triggered by Mechanical Activation

B-site cation order–disorder transition induced by mechanical activation was observed in Pb(Mg_1/3Nb_2/3)O₃–Pb(Mg_1/2W_1/2)O₃ (PMN–PMW) solid solution, which was examined using both XRD diffraction and Raman spectroscopic study. The order–disorder transition is composition dependent. Mechanical activation triggers the B-site disordering, which can be steadily recovered by thermal annealing at elevated temperature, i.e., at temperatures around 600°C. Raman spectroscopy demonstrated that there existed tiny ordered microdomains in 0.4PMN·0.6PMW subjected to up to 20 h of mechanical activation, although they cannot be shown by X-ray diffraction. This is a result of the equilibrium between the mechanical destruction and temperature-facilitated recovering at the collision points during mechanical activation. It is therefore unlikely that a complete disordering can be realized in PMN–PMW by mechanical activation. The disordering in PMN–PMW triggered by mechanical activation occurs simultaneously with the refinement in crystallite size at the initial stage of mechanical activation, suggesting that the fragmentation of crystallites is responsible for the order–disorder transition at least during the initial stage of mechanical activation.     

Hierarchical Domain Structure of Adaptive MB Phase in Pb(Mg1/3Nb2/3)O3–32%PbTiO3 Single Crystal

The domain structure in Pb(Mg_1/3Nb_2/3)O₃–32%PbTiO₃ single crystal has been investigated with analytical electron microscopy. It is revealed that the M_B phase is an adaptive phase composed of 71° rhombohedral nanodomains and that the nanodomain walls are parallel to {110} planes by a combination of convergent beam electron diffraction and through-focus high-resolution image series. The findings suggest and are supportive of the viewpoint that the M_A phase could also be an adaptive phase composed of 109° rhombohedral nanodomains with domain walls parallel to {001} planes.     

Adhesive-Bonded Ca(Mg1/3Nb2/3)O3/Ba(Zn1/3Nb2/3)O3 Layered Dielectric Resonators with Tunable Temperature Coefficient of Resonant Frequency

Ca(Mg_1/3Nb_2/3)O₃ and Ba(Zn_1/3Nb_2/3)O₃ ceramic cylinders with the same diameter were bonded by adhesive with low dielectric loss to yield the layered dielectric resonators, and the microwave dielectric characteristics were evaluated with TE_01δ mode. With increasing the Ba(Zn_1/3Nb_2/3)O₃ thickness fraction, the resonant frequency ( f ₀) decreased, while the effective dielectric constant (ɛ _{r ,eff}) and temperature coefficient of resonant frequency (τ _f ) increased. Good microwave dielectric characteristics were attained for the samples with the Ba(Zn_1/3Nb_2/3)O₃ thickness fraction of 0.5: ɛ _{r ,eff}=34.33, Q × f =57 930 GHz and τ _f =2.6 ppm/°C. Finite-element method was used to predict the microwave dielectric characteristics of the layered resonators and good agreements were attained between the experimental results and predicted ones. Also, both experiment and finite-element analysis indicated that the effects of the adhesive on f ₀, ɛ _{r ,eff}, and τ _f were slight, while that on Q × f value was significant.     

Perovskite Phase Formation in the Relaxor System [Pb(Fe1/2Nb1/2)O3]1-x–[Pb(Zn1/3Nb2/3)O3]x

Phase formation and dielectric properties of the compositions in the system [Pb(Fe_1/2Nb_1/2)O₃]₁_ _x –[Pb(Zn_1/3Nb_2/3)O₃] _x were investigated as possible materials for multilayer ceramic capacitors. The formation of the phase with perovskite structure and dielectric properties of ceramics at room temperature in the entire composition range are presented. The undesirable pyrochlore phase can be suppressed up to x = 0.6 by adopting calcination of B-site oxides, followed by reaction with PbO. Compositions in the single-phase range can be sintered at less than 1000°C.     

Cation Ordering Transformations in the Ba(Zn1/3Nb2/3)O3-La(Zn2/3Nb1/3)O3 System

Single-phase perovskites were formed in the (1−_x)Ba(Zn_1/3Nb_2/3)O₃-( _x )La(Zn_2/3Nb_1/3)O₃ system for compositions with 0.0≤ x ≤0.6. Although the stability of the trigonal "1:2" ordered structure of the Ba(Zn_1/3Nb_2/3)O₃ end member is very limited (0.0≤ x ≤0.05), low levels of lanthanum induce a transformation to a cubic, "1:1" ordered structure that has a broad range of homogeneity (0.05≤ x ≤0.6). Samples with x > 0.6 were comprised of La₃NbO₇, ZnO, and a perovskite with x = 0.6. The cubic 1:1 phases were fully ordered and no evidence was found for a compositionally segregated microstructure. These observations could not be reconciled in terms of a "space-charge" model; rather, they supported a charge-balanced, "random-site" structure for the 1:1 cation-ordered Ba(β_1/2'β_1/2")O₃ phases.     

Influence of Non-Stoichiometry on the Structure and Properties of Ba(Zn1/3Nb2/3)O3 Microwave Dielectrics: I. Substitution of Ba3W2O9

A narrow region of Zn-vacancy-containing cubic perovskites was formed in the (1− x )Ba₃(ZnNb₂)O₉−( x )Ba₃W₂O₉ system up to 2 mol% substitution ( x =0.02). The introduction of cation vacancies enhanced the stability of the 1:2 B-site ordered form of the structure, Ba(Zn_{1− x} □ _x )_1/3(Nb_{1− x} W _x )_2/3O₃, which underwent an order–disorder transition at 1410°C, ∼35° higher than pure Ba(Zn_1/3Nb_2/3)O₃. The Zn vacancies also accelerated the kinetics of the ordering reaction, and samples with x =0.006 comprised large ordered domains with a high lattice distortion ( c/a =1.226) after a 12 h anneal at 1300°C. The tungstate-containing solid solutions can be sintered to a high density at 1390°C, and the resultant ordered ceramics exhibit some of the highest microwave dielectric Q factors ( Q × f =1 18 000 at 8 GHz) reported for a niobate-based perovskite.     

Effect of BaWO4 on the Microwave Dielectric Properties of Ba(Mg1/3Ta2/3)O3 Ceramics

Physical and microwave dielectric properties of complex perovskite Ba(Mg_1/3Ta_2/3)O₃ ceramics have been investigated as a function of the amount of BaWO₄ in the temperature range from 20° to 80°C at 10.5 GHz. Up to 0.05 mol BaWO₄ addition, the lattice constant ratio ( c/a ), ordering parameter, apparent density, and unloaded Q all increase, due to the increase in the substitution of Ta⁵⁺ ions of Ba(Mg_1/3Ta_2/3)O₃ by W⁶⁺ ions from the melted BaWO₄ at above 1430°C. With further addition of BaWO_4, the unloaded Q decreases, due to an increase of the BaWO₄ phase. The temperature coefficient of resonant frequency (TCF) can be controlled by the volume mixture rule of Ba(Mg_1/3Ta_2/3)O₃ and BaWO₄. When 0.09 mol BaWO₄ is added, TCF becomes 0 ppm/°C.     

Low Loss Dielectrics in the Ca(B'1/2Nb1/2)O3 [B'=Lanthanides, Y] System

The Ca(B'_1/2Nb_1/2)O₃ [B'=La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Er, Yb, and In] complex perovskites have been prepared by conventional solid-state ceramic route. The structure and microstructure of the ceramics have been characterized by X-ray diffraction and scanning electron microscopy methods. The ceramics have dielectric constant (ɛ_r) in the range 23–32, normalized Q -factor ( Q _u× f ) 11 000–38 000 GHz and temperature coefficient of resonant frequency (τ_f) −43–5.2 ppm/°C. The microwave dielectric properties of Ca(B'_1/2Nb_1/2)O₃ ceramics are found to depend on the ionic radii of B'-site elements and tolerance factor ( t ). The substitution of Ba²⁺ and Sr²⁺ for Ca²⁺ resulted a phase transition in Ca(B'_1/2Nb_1/2)O₃ ceramics. The (Ca_0.05Ba_0.95) (Y_1/2Nb_1/2)O₃ has τ_f close to zero (1.2 ppm/°C) with ɛ_r=35 and Q _u× f =48 500 GHz and is proposed as a useful material for base station applications. Dielectric properties of the Ca(B'_1/2Nb_1/2)O₃ ceramics were tailored by the addition of TiO₂ and CaTiO₃.     

Structure and Microwave Dielectric Properties of Hexagonal Ba[Ti1−x(Ni1/2W1/2)x]O3 Ceramics

Microwave dielectric ceramics with the composition of Ba[Ti_{1− x} (Ni_1/2W_1/2) _x ]O₃ ( x =0.4–0.6) were prepared by a solid-state reaction method. The evolution of the crystalline phases was investigated by X-ray powder diffraction analysis. A cubic-to-hexagonal phase transition occurred between 1000° and 1300°C. The phase transition is irreversible; thus, the hexagonal phase remains stable at room temperature. The X-ray powder diffraction data for x =0.5 were refined using the Rietveld method. It was identified as a h -BaTiO₃-type hexagonal perovksite with the space group of P 6₃/ mmc . It also reveals that random occupancy of Ti⁴⁺ and W⁶⁺ ions occurs in the B-site substructures, whereas Ni²⁺ ions exclusively occupy the octahedral site in the corner-sharing octahedron. The dielectric properties of dense-sintered ceramics were characterized at microwave frequencies. With an increase in x from 0.4 to 0.6, the Q × f value increased from 26 700 to 42 000 GHz, whereas ɛ_r decreased from 29.8 to 20.0, and τ_f from +6.5 to −9.9 ppm/°C.     

Crystal Structure and Microwave dielectric Properties of Ba(Zn1/3Ta2/3)O3–(Sr,Ba)(Ga1/2Ta1/2)O3 Ceramics

The microwave dielectric properties and crystal structure of Ba(Zn_1/3Ta_2/3)O₃– (Sr,Ba)(Ga_1/2Ta_1/2)O₃ ceramics were investigated in the present study. The Q value of Ba(Zn_1/3Ta_2/3)O₃ was improved by adding 5 mol% Sr(Ga_1/2Ta_1/2)O₃. The maximum Q value of Q × f = 162000 GHz was obtained at 0.95Ba(Zn_1/3Ta_2/3)O₃. 0.05Sr(Ga_1/2Ta_1/2)O₃. For this composition, a lattice super structure caused by hexagonal ordering was observed. A further improvement in the Q value was attained when some Sr was replaced with Ba, and 0.95Ba(Zn_1/3Ta_2/3)O₃· 0.05(Sr_0.25Ba_0.75)(Ga_1/2Ta_1/2)O₃ exhibited a maximum Q value such that Q × f = 210000 GHz. Despite the increased Q value with the replacement of Sr by Ba, the c/a value, which indicates the degree of lattice distortion, remained constant near 3/2. The Q value thus improved without lattice distortion in the system Ba(Zn_1/3Ta_2/3)O₃-(Sr,Ba)(Ga_1/2Ta_1/2)O₃, whereas the improvement of Q value increased with lattice distortion in the solid solution system with Ba(Zn_1/3Ta_2/3)O₃ as an end member.