基于CFOA的低通、带通和高通滤波器

用3个电流反馈运算放大器(Current-feedback Operational Amplifier，CFOA)、3个接地电容、3个电阻和1个浮地电阻的组合提出了一种高输入阻抗低通、带通和高通滤波器电路．该滤波器电路有如下特征：用同一结构实现了低通、带通和高通滤波器，无需元件匹配，接地电容的使用使得该电路适合于集成实现，很低的输出阻抗使得该电路在电压模式电路中级联比较方便．     

基于OTA的多功能电压模滤波器及其仿真

本文采用信号流图法设计了一种基于ＯＴＡ的三输入一输出多功能电压模滤波器新电路，该电路由五个ＯＴＡ和两个接地电容构成，合理选择输入电压可实现低通、高通、带通、带阻及全通滤波功能。文章还对电路进行了ＭＯＳ管级的计算机仿真，其结果表明所提出的电路方案正确有效。     

基于CMOS OTA的电流模式KHN滤波器

提出了一种基于ＣＭＯＳ ＯＴＡ的电流模式ＫＨＮ滤波器电路。该电路能同时实现低通、带通及高通滤波器,通过端口相接还可以实现带阻及全通滤波器。整个电路仅含两个接地电容而不含其它无源元件。便于集成。ＰＳＰＩＣＥ模拟表明,该电路有低的灵敏度。     

新颖的基于CCⅡ的电压模式二阶滤波器

提出了一个新颖的基于同相第二代电流传输器的电压模式滤波器的形式电路，根据该形式电路可以产生低通，带通，高通二阶滤波器。所有滤波器地无源ＲＣ元件全部接地，便于集成，且具有很低的无源灵敏度，极点增益及角频率，品质因数均可调节。     

一种基于MOCCII的n阶多功能滤波器

提出了一种由MOCCⅡ实现的单输入多输出n阶多功能滤波电路。该电路只需用n个MOCCⅡ、电容和电阻,适当选定输入输出端,可以实现n阶高通、低通、带通和带阻滤波功能。本文所提出的电路结构简单,所用的电容、电阻均接地,易于集成。PIPISE仿真结果进一步证明了理论分析的正确性。     

一种新的开关电流双二次滤波器

本文阐述了开关电流(SI)和开关电容(SC)电路的相似性原理,由此提出了一个新的SI双二次滤波器电路,该电路是由文献[5]的三运放SC双二次电路为原型导出的。该电路的一个重要特征是:它在单一积木块上能同时获得低通、带通和高通滤波功能。据此,得到了SI电路的一般双二次实现。     

一种基于MOCCC-II多功能滤波器

本文提出了一种新型的多功能电流模式二阶滤波器电路。该电路基于多端输出电流控制第二代电流传输器,仅需2个MOCCC-II和2个电容,无需元件匹配就能同时实现低通、带通、高通、带阻及全通滤波输出。电路中所有的无源元件均接地,且参数敏感度低。该滤波器可用于通信、电子测量与仪器仪表的信号处理。PSpice仿真结果与理论分析相吻合,验证了该方法的可行性。     

一种基于MOCCC-Ⅱ多功能滤波器

本文提出了一种新型的多功能电流模式二阶滤波器电路.该电路基于多端输出电流控制第二代电流传输器,仅需2个MOCCC-II和2个电容,无需元件匹配就能同时实现低通、带通、高通、带阻及全通滤波输出.电路中所有的无源元件均接地,且参数敏感度低.该滤波器可用于通信、电子测量与仪器仪表的信号处理.PSpice仿真结果与理论分析相吻合,验证了该方法的可行性.     

全集成通用型MOSFET—C CCII连续时间滤波器的实现

本文提出了一种基于第二代电流传输器（ＣＣＩＩ）的全集成二阶通用型ＭＯＳＦＥＴ－Ｃ连续时间滤波器，它可以实现诸如低通、带通、高通、带阻及全通二次传递函数。该电路不采用平衡结构，但ＭＯＳ管的非线性的消除程度则等同平衡结构。灵敏度也较低。     

通用有源电流模式滤波器及其仿真

采用信号流图设计了由两个 OTA和一个 MOCC + / -构成的三输入一输出电流模式二阶滤波器新电路 ,合理选择输入电流可实现低通、高通、带通、带阻及全通滤波功能。所提电路结构简单 ,中心频率ω0 和品质因数 Q独立可调 ,无源元件全部接地 ,滤波器特性参数对无源元件灵敏度低。理论分析和 MOS管级的 PSPICE仿真表明所提电路方案正确     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.