首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 15 毫秒
1.
Thin films of electrochromic WO3 were prepared via wet chemical deposition. Precursor solutions containing WOCl4 in isopropanol were used and films were deposited by spin coating. Various techniques were used for characterization of the films such as Rutherford backscattering spectroscopy (RBS), Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), UV-VIS spectroscopy and electrochemical methods. Composition, structural characteristics and electrochromic properties were studied as function of the curing temperature, in the range 80–500°C.  相似文献   

2.
Combustion synthesized Li(Ni1/3Mn1/3Co1/3)O2 particles are coated with thin, conformal layers of Al2O3 by atomic layer deposition (ALD). XRD, Raman, and FTIR are used to confirm that no change to the bulk, local structure occurs after coating. Electrochemical impedance spectroscopy (EIS) results indicate that the surface of the Li(Ni1/3Mn1/3Co1/3)O2 are protected from dissolution and HF attack after only 4-layers, or ∼8.8 Å of alumina. Electrochemical performance at an upper cutoff of 4.5 V is greatly enhanced after the growth of Al2O3 surface film. Capacity retention is increased from 65% to 91% after 100 cycles at a rate of C/2 with the addition of only two atomic layers. Due to the conformal coating, the effects on Li(Ni1/3Mn1/3Co1/3)O2 overpotential and capacity are negligible below six ALD-layers. We propose that the use of ALD for coating on Li(Ni1/3Mn1/3Co1/3)O2 particles makes the material a stronger replacement candidate for LiCoO2 as a positive electrode in lithium ion batteries.  相似文献   

3.
Homogenous, crack free iron oxide films are prepared by the sol–gel spin coating technique from a solution of iron iso-propoxide and isopropanol. The films were characterized by X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-visible (UV–Vis) spectroscopy and cyclic voltammetry (CV). XRD of the films showed that they had an amorphous structure. The optical constants refractive index (n) and extinction coefficient (k) were measured by scanning spectrometer in the wavelength range of 390–990 nm. The n and k values were found n =2.3±0.01 and k =0.2±0.002 at 650 nm. The electrochemical behavior investigated in 0.5 M LiClO4 propylene carbonate (PC) electrolyte-CV examinations showed good rechargeability of the Li+/e insertion extraction process beyond 300 cycles. Spectroelectrochemistry showed that these films exhibit weak cathodic coloration in the spectral range of 350–800 nm.  相似文献   

4.
S. M. Rozati  T. Ganj 《Renewable Energy》2004,29(10):1665-1669
Transparent conducting fluorine doped indium oxide (In2O3:F) thin films have been deposited on Corning 7059 glass substrates by the spray pyrolysis technique. The structural, electrical, and optical properties of these films were investigated as a function of substrate temperature. The X-ray diffraction pattern of the films deposited at lower substrate temperature (Ts=300 °C) showed no peaks of In2O3:F. In the useful range for deposition (i.e. 425–600 °C), the orientation of the films was predominantly [400]. For the 4500 Å thick In2O3:F deposited with an F content of 10-wt%, the minimum sheet resistance was 120 Ω and average transmission in the visible wavelength rang (400–700 nm) was 88%.  相似文献   

5.
Vanadium and tantalum-doped vanadium pentoxide, V2O5 and V2O5:Ta thin films (2.5 and 5 mol% of Ta) were prepared using sol–gel dip-coating technique.The coating solutions were prepared by reacting vanadium (V) oxytripropoxide and tantalum ethoxide (V) as precursors using anhydrous isopropyl alcohol as solvent.The films were deposited on a transparent glass substrate with ITO conducting film by dip-coating technique, with a withdrawal of 20 cm/min from the vanadium–tantalum solution and heat treated at 300 °C for 1 h. The resulting films were characterized by cyclic voltammetry, optical spectroscopy and by X-ray diffraction analysis (XRD). XRD data show that the films thermally treated at 300 °C were crystalline.A charge density of 70 mC/cm2 was obtained for the film with 5 mol% of Ta, with an excellent stability up to 1500 cycles.  相似文献   

6.
Spectrally selective AlxOy/Al/AlxOy multilayer absorber coatings were deposited on copper (Cu) and molybdenum (Mo) substrates using a pulsed sputtering system. The Al targets were sputtered using asymmetric bipolar-pulsed DC generators in Ar+O2 and Ar plasmas to deposit an AlxOy/Al/AlxOy coating. The compositions and thicknesses of the individual component layers were optimized to achieve high solar absorptance (α=0.950-0.970) and low thermal emittance (ε=0.05-0.08). The X-ray diffraction data in thin film mode showed an amorphous structure of the AlxOy/Al/AlxOy coating. The X-ray photoelectron spectroscopy data of the AlxOy/Al/AlxOy multilayer absorber indicated that the AlxOy layers present in the coating were non-stoichiometric. The optical constants (n and k) of the multilayer absorber were determined from the spectroscopic ellipsometric data. Drude's free-electron model was used for generating the theoretical dispersion of optical constants for Al films, while the Tauc-Lorentz model was used for modeling optical properties of the dielectric AlxOy layers. In order to study the thermal stability of the AlxOy/Al/AlxOy coatings, they were subjected to heat treatment (in air and vacuum) at different temperatures and durations. The multilayer absorber deposited on Cu substrates exhibited high solar selectivity (α/ε) of 0.901/0.06 even after heat-treatment in air up to 400 °C for 2 h. At 450 °C, the solar selectivity decreased significantly on Cu substrates (e.g., α/ε=0.790/0.07). The coatings deposited on Mo substrates were thermally stable up to 800 °C in vacuum with a solar selectivity of 0.934/0.05. The structural stability of the absorber coatings heat treated in air (up to 400 °C) and vacuum (up to 800 °C) was confirmed by micro-Raman spectroscopy measurements. Studies on the accelerated aging tests suggested that the absorber coatings on Cu were stable in air up to 75 h at 300 °C and the service lifetime of the multilayer absorber was predicted to be more than 25 years. Further, the activation energy for the degradation of the multilayer absorber heat treated for longer durations in air is of the order of 64 kJ/mol.  相似文献   

7.
Ni/xY2O3–Al2O3 (x = 5, 10, 15, 20 wt%) catalysts were prepared by sequential impregnation synthesis. The catalytic performance for the autothermal reforming of methane was evaluated and compared with Ni/γ-Al2O3 catalyst. The physicochemical properties of catalysts were characterized by X-ray diffraction (XRD), Transmission electron microscope (TEM), X-Ray Photoelectron Spectrometer (XPS), Thermo Gravimetric Analyzer (TGA) and H2-temperature programmed reduction techniques (TPR). The decrease of nickel particle size and the change of reducibility were found with Y modification. The CH4 conversion increased with elevating levels of Y2O3 from 5% to 10%, then decreased with Y content from 10% to 20%. Ni/xY2O3–Al2O3 catalysts maintained high activity after 24 h on stream, while Ni/Al2O3 had a significant deactivation. The characterization of spent catalysts indicated that the addition of Y retarded Ni sintering and decreased the amount of coke.  相似文献   

8.
The sol gel method was employed to prepare peroxopolytungstic acid (P-PTA). Palladium chloride salt was dissolved in the sol with different Pd:W molar ratios and coated on Al2O3 substrates by spin coating method. XRD and XPS techniques were used to analyze the crystal structure and chemical composition of the films before and after heat treatment at 500 °C. We observed that Pd can modify the growth kinetic of tungsten trioxide nanoparticles by reducing the crystallite size and as a result can improve hydrogen sensitivity. Resistance-sensing measurements indicated sensitivity of about 2.5 × 104 at room temperature in hydrogen concentration of 0.1% in air. Considering all sensing parameters, an optimum working temperature of 100 °C was obtained.  相似文献   

9.
A novel surface modification method was carried out by reactive dc magnetron sputtering to fabricate TiO2 electrodes coated with Al2O3 for improving the performance of dye-sensitized solar cells (DSSCs). The Al2O3-coated TiO2 electrodes had been characterized by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV–vis spectrophotometer, cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS). The study results revealed that the modification to TiO2 increases dye absorption amount, reduces trap sites on TiO2, and suppresses interfacial recombination. The impact of sputtering time on photoelectric performance of DSSCs was investigated. Sputtering Al2O3 for 4 min on 5-μm thick TiO2 greatly improves all cell parameters, resulting in enhancing the conversion efficiency from 3.93% to 5.91%. Further increasing sputtering time decreases conversion efficiency.  相似文献   

10.
Ni/Al2O3 nanocatalysts doped with Co and Cu were prepared by co-impregnation and modified by non-thermal plasma. The nanocatalysts were characterized by XRD, FESEM, TEM, EDX dot-mapping, BET, FTIR, TGA-DTG, and XPS analysis. According to XRD and XPS results, good interaction between active phase and support can be observed in both Ni–Co/Al2O3 and Ni–Cu/Al2O3 nanocatalysts. A uniform morphology, high surface area, and well dispersed particles of active sites in Ni–Co/Al2O3 nanocatalyst were observed that shows the effect of cobalt in controlling Ni ensemble size. In contrast Ni–Cu/Al2O3 nanocatalyst had no homogenous dispersion of active phase due to sintering of copper particles. The activity measurements illustrated better Ni–Co/Al2O3 nanocatalyst activity in comparison to Ni/Al2O3 and Ni–Cu/Al2O3 in terms of CH4 and CO2 conversion. H2 and CO yield were higher for Ni–Co/Al2O3 and higher H2/Co ratio was obtained as well. Whereas Ni/Al2O3 and Ni–Co/Al2O3 did not experience deactivation, Ni–Cu/Al2O3 suffered from activity loss by ca. 22% and 16% for CH4 and CO2 conversion, respectively. Sintering most likely happened in Ni–Cu/Al2O3 nanocatalyst due to high temperature of calcination while cobalt by controlling the size of Ni particles, alternated the size of active sites to a size range in which carbon formation was suppressed. Ni/Al ratio from XPS analysis which signifies Ni dispersion on alumina support was 5.15, 9.16, and 6.35 for Ni/Al2O3, Ni–Co/Al2O3, and Ni–Cu/Al2O3 nanocatalysts respectively. The highest ratio of Ni/Al was for Ni–Co/Al2O3 nanocatalyst that shows the best coverage of support by Ni active phase in this nanocatalyst.  相似文献   

11.
Amorphous LiCo1/3Mn1/3Ni1/3O2 thin films were deposited on the NASICON-type Li-ion conducting glass ceramics, Li1+x+yAlxTi2−xSiyP3−yO12 (LATSP), by radio frequency (RF) magnetron sputtering below 130 °C. The amorphous films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The Li/PEO18-Li(CF3SO2)2N/LATSP/LiCo1/3Mn1/3Ni1/3O2/Au all-solid-state cells were fabricated to investigate the electrochemical performance of the amorphous films. It was found that the low-temperature deposited amorphous cathode film shows a high discharge voltage and a high discharge capacity of around 130 mAh g−1.  相似文献   

12.
Bilayer photoanodes were prepared onto glass substrates (FTO) in order to improve generated photocurrents using UV-vis light by water splitting process. A comparative study of photocatalytic was performed over the films surface using Fe2O3, WO3 and mixture of bicomponents (Fe2O3:WO3). Different types of films were prepared using Fe2O3, WO3 and bicomponents (mixture) on FTO substrates. The films were grown by sol gel method with the PEG-300 as the structure-directing agent. The photo-generated of the samples were determined by measuring the currents and voltages under illumination of UV-vis light. The morphology, structure and related composition distribution of the films have been characterized by SEM, XRD and EDX respectively. Photocurrent measurements indicated surface roughness as the effective parameter in this study. The deposited surfaces by bicomponents or mixture are flat without any feature on the surface while the deposited surfaces by WO3 appears rough surface as small round (egg-shaped particles) and cauliflower-like. The surface deposited by Fe2O3 show rough no as well as WO3 surface. The deposited surfaces by WO3 reveal the higher value of photocurrent measurement due to surface roughness. Indeed, the roughness can be effective in increasing contact surface area between film and electrolyte and diffuse reflection (light scattering effect). The solution (Fe2O3:WO3) shows the low photocurrent value in compare to WO3 and Fe2O3 hat it may be due to decomposition the compound at 450 ± 1 °C to iron-tungstate Fe2(WO4)3.  相似文献   

13.
Pristine, equivalently and non-equivalently Al substituted LiNi0.5Mn0.5O2 materials were prepared by a combination of co-precipitation and solid-state reaction. As shown by XRD and XPS, lattice volume shrinkage of LiNi0.5(Mn0.45Al0.05)O2 was attributed to the presence of Ni in both 2+ and 3+, while the lattice volume expansion of Li(Ni0.45Al0.05)Mn0.5O2 was caused by lowering the average oxidation state of Mn. Electrochemical performance of LiNi0.5Mn0.5O2 materials can be greatly affected by the change of oxidation states of the transition metals by Al substitution. Non-equivalent substitution of Al for Ni leads to deteriorated discharge performance and cyclic stability due to the reduction of the electrochemical active Ni2+ and structure supported Mn4+, while an increase in the amount of Ni2+ in LiNi0.5(Mn0.45Al0.05)O2 brings obvious improvement of the electrochemical properties. EIS analyses of the electrode materials at pristine and charged states indicate that the poor electrochemical performance of Li(Ni0.45Al0.05)Mn0.5O2 material can be ascribed to the higher charge transfer resistance and surface film resistance, and the observed higher current rate capability of LiNi0.5(Mn0.45Al0.05)O2 can be understood due to the better charge transfer kinetics.  相似文献   

14.
To investigate the mechanisms of the improvement on separation efficiency of photogenerated carriers, a Fe2O3/SrTiO3 heterojunction semiconductor with an improved separation efficiency was successfully prepared. The heterojunction semiconductor was characterized with X-ray diffraction (XRD), UV–vis absorption spectrum, scanning electron microscope (SEM) and surface photovoltage (SPV) spectroscopy. The energy band diagrams of Fe2O3 and SrTiO3 were determined with X-ray photoelectron spectroscopy (XPS), based on which the conduction band offset (CBO) between Fe2O3 and SrTiO3 was quantified to be 1.26 ± 0.03 eV. The recombination of photogenerated carriers was investigated with photoluminescence (PL) spectrum, which indicates that the formation of Fe2O3/SrTiO3 decreases the recombination. Thus the improved separation efficiency is mainly due to the energy difference between the conduction band edges of Fe2O3 and SrTiO3, and the decreased electron-hole recombination for Fe2O3/SrTiO3.  相似文献   

15.
CuGaSe2–GaAs heterojunctions were fabricated by fast evaporation of polycrystalline CuGaSe2 from a single source on n-type GaAs substrates. The best CuGaSe2–GaAs photocell (without an antireflective coating) exhibited an efficiency of 11.5%, Jsc=32 mA/cm2, Voc=610 mV and FF=0.60. The spectral distribution of photosensitivity of CuGaSe2–GaAs junctions extends from 400 to 900 nm. The CuGaSe2 films were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM) techniques. XRD analysis indicated that the thin films were strongly oriented along the (1 1 2) plane. SEM studies of CuGaSe2 films showed nearly stoichiometric composition with grain size about 1–2 μm. The energy dispersive X-ray spectroscopy (EDX) analysis of Cu concentration distribution in n-type GaAs showed that Cu diffused from the film into n-type GaAs during the growth process resulting in formation of the latent p–n homojunction in substrate. The diffusion coefficient of Cu in GaAs at growth temperature (520°C) estimated from EDX measurements was 6×10−8 cm2/s.  相似文献   

16.
Cerium dioxide (CeO2) thin films were prepared by spray pyrolysis using hydrated cerium chloride (CeCl3·7H2O) as source compound. The films prepared at substrate temperatures below 300°C were amorphous, while those prepared at optimal conditions (Ts=500°C,s=5 ml/min) were polycrystalline, cubic in structure, preferentially oriented along the (2 0 0) direction and exhibited a transmittance value greater than 80% in the visible range. The cyclic voltammetry study showed that films of CeO2 deposited on ITO pre-coated glass substrates were capable of charge insertion/extraction when immersed in an electrolyte of propylene carbonate with 1 M LiClO4.These films also remained fully transparent after Li+ intercalation/deintercalation.  相似文献   

17.
Zinc indium selenide (ZnIn2Se4) thin films have been prepared by spraying a mixture of an equimolar aqueous solution of zinc sulphate (ZnSO4), indium trichloride (InCl3), and selenourea (CH4N2Se), onto preheated fluorine-doped tin oxide (FTO)-coated glass substrates at optimized conditions of substrate temperature and a solution concentration. The photoelectrochemical (PEC) cell configuration of n-ZnIn2Se4/1 M (NaOH+Na2S+S)/C has been used for studying the current voltage (IV), spectral response, and capacitance voltage (CV) characteristics of the films. The PEC study shows that the ZnIn2Se4 thin films exhibited n-type conductivity. The junction quality factor in dark (nd) and light (nl), series and shunt resistance (Rs and Rsh), fill factor (FF) and efficiency (η) for the cell have been estimated. The measured (FF) and η of the cell are, respectively, found to be 0.435% and 1.47%.  相似文献   

18.
The effect of thermal annealing on the electrochromic properties of the tungsten oxide (WO3−x) nanowires deposited on a transparent conducting substrate by vapor evaporation was investigated. The X-ray diffraction (XRD) indicated that the structures of the nanowries annealed below 500 °C had no significant change. The X-ray photoelectron spectroscopy (XPS) analysis suggested that the O/W ratio and the amount of W6+ ions in the annealed nanowire films could be increased as increasing annealing temperature. Increased annealing temperature could promote the coloration efficiency and contrast of the nanowire films; however, it could also affect the switching speed of the nanowire films.  相似文献   

19.
Alumina supported nickel (Ni/Al2O3), nickel–cobalt (Ni–Co/Al2O3) and cobalt (Co/Al2O3) catalysts containing 15% metal were synthesized, characterized and tested for the reforming of CH4 with CO2 and CH4 cracking reactions. In the Ni–Co/Al2O3 catalysts Ni–Co alloys were detected and the surface metal sites decreased with decrease in Ni:Co ratio. Turnover frequencies of CH4 were determined for both reactions. The initial turnover frequencies of reforming (TOFDRM) for Ni–Co/Al2O3 were greater than that for Ni/Al2O3, which suggested a higher activity of alloy sites. The initial turnover frequencies for cracking (TOFCRK) did not follow this trend. The highest average TOFDRM, H2:CO ratio and TOFCRK were observed for a catalyst containing a Ni:Co ratio of 3:1. This catalyst also had the maximum carbon deposited during reforming and produced the maximum reactive carbon during cracking. It appeared that carbon was an intermediate product of reforming and the best catalyst was able to most effectively crack CH4 and oxidize carbon to CO by CO2.  相似文献   

20.
A simple spray method for the preparation of pyrite (FeS2) thin films has been studied using FeSO4 and (NH4)2Sx as precursors for Fe and S, respectively. Aqueous solutions of these precursors are sprayed alternately onto a substrate heated up to 120°C. Although Fe–S compounds including pyrite are formed on the substrate by the spraying, sulfurization of deposited films is needed to convert other phases such as FeS or marcasite into pyrite. A single-phase pyrite film is obtained after the sulfurization in a H2S atmosphere at around 500°C for 30 min. All pyrite films prepared show p-type conduction. They have a carrier concentration (p) in the range 1016–1020 cm−3 and a Hall mobility (μH) in the range 200–1 cm2/V s. The best electrical properties (p=7×1016 cm−3, μH=210 cm2/V s) for a pyrite film prepared here show the excellence of this method. The use of a lower concentration FeSO4 solution is found to enhance grain growth of pyrite crystals and also to improve electrical properties of pyrite films.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号