共查询到19条相似文献,搜索用时 109 毫秒
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采用0.18μm CMOS工艺设计实现了一个12.5 Gb/s半速率时钟数据恢复电路(CDR)以及1:2分接器,该CDR及分接器是串行器/解串器(SerDes)接收机中的关键模块,为接收机系统提供6.25GHz的时钟及经二分接后速率降半的6.25Gb/s数据.该电路包括Bang-bang型鉴频鉴相器(PFD)、四级环形压控振荡器(VCO)、V/I转换器、低通滤波器(LPF)、1:2分接器等模块,其中PFD采用一种新型半速率的数据采样时钟型结构,能提高工作速率达到12.5 Gb/s.芯片测试结果显示,在1.8V的工作电压下,VCO中心频率在6.25GHz时,调谐范围约为1GHz;输入12Gb/s、长度为231-1的伪随机数据时,得到6GHz时钟的峰峰抖动为9.12ps,均方根(RMS)抖动为1.9ps;整个系统工作性能良好,二分接器输出数据眼图清晰,电路核心模块功耗为150mW,整体芯片面积0.476×0.538mm2. 相似文献
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针对高速(Gbit/s)串行数据通信应用,提出了一种混合结构的高速时钟数据恢复电路。该电路结构结合鉴频器和半速率二进制鉴相器,实现了频率锁定环路和相位恢复环路的同时工作。和传统的双环路结构相比,在功耗和面积可比拟的前提下,该结构系统的复杂度低、响应速度快。电路采用1.8 V,0.18μm CMOS工艺流片验证,测试结果显示在2 Gbit/s伪随机数序列输入情况下,电路能正确恢复出时钟和数据。芯片面积约0.5 mm~2,时钟数据恢复部分功耗为53.6 mW,输出驱动电路功耗约64.5 mW,恢复出的时钟抖动峰峰值为45 ps,均方根抖动为9.636 ps。 相似文献
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针对宽带自偏置锁相环(PLL)中存在严重的电荷泵电流失配问题,提出了一种电流失配自适应补偿自偏置锁相环。锁相环通过放大并提取参考时钟与反馈时钟的锁定相位误差脉冲,利用误差脉冲作为误差判决电路的控制时钟,通过逐次逼近方法自适应控制补偿电流的大小,逐渐减小鉴相误差,从而减小了锁相环输出时钟信号抖动。锁相环基于40 nm CMOS工艺进行设计,后仿真结果表明,当输出时钟频率为5 GHz时,电荷泵输出噪声从-115.7 dBc/Hz@1 MHz降低至-117.7 dBc/Hz@1 MHz,均方根抖动从4.6 ps降低至1.6 ps,峰峰值抖动从10.3 ps降低至4.7 ps。锁相环输出时钟频率为2~5 GHz时,补偿电路具有良好的补偿效果。 相似文献
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面向高速光通信系统的应用,提出了一种全速率线性25Gb/s时钟数据恢复电路(Clock and Data Recovery Circuit,CDRC)。CDRC采用了混频器型线性鉴相器和自动锁频技术来实现全速率时钟提取和数据恢复。在设计中没有使用外部参考时钟。基于45nm CMOS工艺,该CDR电路从版图后仿真结果得到:恢复25Gb/s数据眼图的差分电压峰峰值Vpp和抖动峰峰值分别为1.3V和2.93ps;输出25GHz时钟的差分电压峰峰值Vpp和抖动峰峰值分别为1V和2.51ps,相位噪声为-93.6dBc/Hz@1MHz。该芯片面积为1.18×1.07mm2,在1V的电源电压下功耗为51.36mW。 相似文献
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This paper presents a clock and data recovery circuit that supports dual data rates of 5.4 Gbps and 3.24 Gbps for DisplayPort v1.2 sink device. A quarter‐rate linear phase detector (PD) is used in order to mitigate high speed circuit design effort. The proposed linear PD results in better jitter performance by increasing up and down pulse widths of the PD and removes dead‐zone problem of charge pump circuit. A voltage‐controlled oscillator is designed with a ‘Mode’ switching control for frequency selection. The measured RMS jitter of recovered clock signal is 2.92 ps, and the peak‐to‐peak jitter is 24.89 ps under 231–1 bit‐long pseudo‐random bit sequence at the bitrate of 5.4 Gbps. The chip area is 1.0 mm×1.3 mm, and the power consumption is 117 mW from a 1.8 V supply using 0.18 μm CMOS process. 相似文献
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A 10-Gb/s phase-locked clock and data recovery circuit incorporates a multiphase LC oscillator and a half-rate phase/frequency detector with automatic data retiming. Fabricated in 0.18-/spl mu/m CMOS technology in an area of 1.75/spl times/1.55 mm/sup 2/, the circuit exhibits a capture range of 1.43 GHz, an rms jitter of 0.8 ps, a peak-to-peak jitter of 9.9 ps, and a bit error rate of 10/sup -9/ with a pseudorandom bit sequence of 2/sup 23/-1. The power dissipation excluding the output buffers is 91 mW from a 1.8-V supply. 相似文献
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利用TSMC的O.18μm CMOS工艺,设计实现了单片集成的5 Gb/s锁相环型时钟恢复电路。该电路采用由半速率鉴相器、四相位环形电流控制振荡器、电荷泵以及环路滤波器组成的半速率锁相环结构。测试表明:在输入速率为5 Gb/s、长度为211-1伪随机序列的情况下,恢复出时钟的均方根抖动为4.7 ps。在偏离中心频率6MHz频率处的单边带相位噪声为-112.3 dBe/Hz。芯片面积仅为0.6mm×O.6 mm,采用1.8 V电源供电,功耗低于90 mW。 相似文献
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The design of a fully monolithic integrated 10 GHz full-rate clock and data recovery (CDR) circuit in 0.18 /spl mu/m digital CMOS technology, which employs an injection phase-locked loop (PLL) technique is presented. The CDR operating without the external reference exhibits a capture range of 200 MHz while consuming 205 mA current from 1.8 V supply including the output buffer. The recovered clock signal with 250 mV/sub pp/ pseudorandom bit Sequence input data of length 2/sup 31/-1 exhibits 7.9 ps of peak-to-peak (p-p) and 1.1 ps of root-mean-square (RMS) jitter. The measured clock phase noise at 1 MHz offset is approximately -109 dBc/Hz. 相似文献
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Hsiang-Hui Chang Rong-Jyi Yang Shen-Iuan Liu 《IEEE transactions on circuits and systems. I, Regular papers》2004,51(12):2356-2364
A fully integrated clock and data recovery circuit (CDR) using a multiplying shifted-averaging delay locked loop and a rate-detection circuit is presented. It can achieve wide range and low jitter operation. A duty-cycle-insensitive phase detector is also proposed to mitigate the dependency on clock duty cycle variations. The experimental prototype has been fabricated in a 0.25-/spl mu/m 1P5M CMOS technology and occupies an active area of 2.89 mm/sup 2/. The measured CDR could operate from 125 Mb/s to 2.0 Gb/s with a bit error rate better than 10/sup -12/ from a 2.5-V supply. Over the entire operating frequency range, the maximum rms jitter of the recovered clock is less than 4 ps. 相似文献
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Che-Fu Liang Sy-Chyuan Hwu Shen-Iuan Liu 《Solid-State Circuits, IEEE Journal of》2008,43(5):1217-1226
A jitter-tolerance-enhanced 10 Gb/s clock and data recovery (CDR) circuit is presented. The proposed architecture cascades 2 half-rate CDRs with different loop bandwidth to relax the design bottleneck and the predicted jitter tolerance can be enhanced without sacrificing the jitter transfer. By using a gated digital-controlled oscillator (GDCO), the proposed GDCO-based phase detector may reduce the cost of this architecture and achieve a wide linear range. This CDR circuit has been fabricated in a 0.13 mum CMOS technology and consumes 60 mW from a 1.5 V supply. It occupies an active area of 0.36 mm2. The measured rms jitter is 0.96 ps and the peak-to-peak jitter is 7.11 ps for a 10 Gb/s 27-1 PRBS. The measured bit error rate for a 10 Gb/s 27-1PRBS is less than 10-12. 相似文献
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设计了单片集成的超高速NRZ码时钟恢复电路,该电路采用注入同步压控振荡器结合锁相环的结构,在保持普通PLL型时钟恢复电路优点的同时,加快了锁相环的响应速度,提高了系统的稳定度。利用法国OMMIC公司的0.2μmGaAsPHEMT,制造了MMIC芯片,在输入速率为8.2Gb/s、长度为223-1伪随机序列的情况下,输出时钟的均方根抖动为1.6ps。芯片面积为1.5mm×2mm。采用-5V电源供电,功耗约为600mW。 相似文献
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An integrated 10 Gb/s clock and data recovery (CDR) circuit is fabricated using SiGe technology, It consists of a linear-type phase-locked loop (PLL) based on a single-edge version of the Hogge phase detector, a LC-tank voltage-controlled oscillator (VCO) and a tri-state charge pump. A PLL equivalent model and design method to meet SONET jitter requirements are presented. The CDR was tested at 9.529 GB/s in full operation and up to 13.25 Gb/s in data recovery mode. Sensitivity is 14 mVpp at a bit error rate (BER)=10-9 . The measured recovered clock jitter is less than 1 ps RMS. The IC dissipates 1.5 W with a -5 V power supply 相似文献
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A monolithic clock and data recovery PLL circuit is implemented in a digital silicon bipolar technology without modification. The only external component used is the loop filter capacitor. A self-aligned data recovery architecture combined with a novel phase-detector design eliminates the need for nonlinear processing and phase shifter stages. This enables a simpler design with low power and reduced dependence on the bit rate. At 2.3 Gb/s, the test chip consumes 100 mW from a -3.6-V supply, excluding the input and output buffers. The worst-case rms jitter of the recovered clock is less than 14 ps with 223-1 pseudorandom bit sequence 相似文献