High-gain quantum-dot semiconductor optical amplifier for 1300 nm

Using an AlGaAs-GaAs waveguide structure with a six-stack InAs-InGaAs "dots-in-a-well" (DWELL) gain region having an aggregate dot density of approximately 8/spl times/10/sup 11/ cm/sup -2/, an optical gain of 18 dB at 1300 nm has been obtained in a 2.4-mm-long amplifier at 100-mA pump current. The optical bandwidth is 50 nm, and the output saturation power is 9 dBm. The dependence of the amplifier parameters on the pump current and the gain recovery dynamics has also been studied.     

A W-band InAs/AlSb low-noise/low-power amplifier

The first W-band antimonide based compound semiconductor low-noise amplifier has been demonstrated. The compact 1.4-mm/sup 2/ three-stage co-planar waveguide amplifier with 0.1-/spl mu/m InAs/AlSb high electron mobility transistor devices is fabricated on a 100-/spl mu/m GaAs substrate. Minimum noise-figure of 5.4dB with an associated gain of 11.1 dB is demonstrated at a total chip dissipation of 1.8 mW at 94 GHz. Biased for higher gain, 16/spl plusmn/1 dB is measured over a 77-103 GHz frequency band.     

Beyond G-band: a 235 GHz InP MMIC amplifier

We present results on an InP monolithic millimeter-wave integrated circuit (MMIC) amplifier having 10-dB gain at 235GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07-/spl mu/m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for S-parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230GHz.     

Single-port laser-amplifier modulators for local access

We describe a single-port, reflective, waveguide modulator based on semiconductor laser amplifier technology. The single-port geometry reduces the high packaging cost associated with two-port waveguide modulators, while the internal gain of the amplifier compensates for splitting and coupling losses. A modulator with a bulk active layer showed a reflection-mode chip gain of 17 dB at /spl lambda/=1.56 /spl mu/m. When driven with pseudorandom digital data at 100 Mb/s, extinction ratios of >12 dB were observed over the broad wavelength range (20 nm) needed for wavelength division multiplexed systems. Bit-error-rate tests confirmed that there was no distortion penalty, compared to a LiNbO/sub 3/ reference modulator.     

High-power 1.5-/spl mu/m InGaAsP-InP slab-coupled optical waveguide amplifier

We report the first demonstration of a high-power semiconductor optical amplifier (SOA) based on the slab-coupled optical waveguide concept. This concept allows the realization of SOAs having large fundamental optical modes, low loss, and small optical confinement factor. These attributes support large output saturation power, long length for efficient heat removal, and direct butt-coupling to single-mode fibers. The 1.5-/spl mu/m InGaAsP-InP quantum-well amplifier described here has a length of 1 cm, 1/e/sup 2/ intensity widths of 4 /spl mu/m (vertical) and 8 /spl mu/m (horizontal), a fiber-to-fiber gain of 13 dB, and a fiber-coupled output saturation power of 630 mW (+28 dBm). The measured butt-coupling efficiency between the amplifier and SMF-28 is 55%. Thus, the output saturation power of the amplifier itself is approximately 1.1 W (+31 dBm).     

32 GHz MMIC distributed amplifier based on n-channel SiGe MODFETs

For the first time the fabrication of a distributed amplifier based on n-type Si/SiGe-MODFETs is presented. The realised amplifier consists of six identical stages and has a gain of 5.5 dB. The bandwidth of this amplifier is 32 GHz. The gain ripple up to this frequency is /spl plusmn/0.8 dB. The return losses at the input and output are better than 10 dB. Using a coplanar waveguide layout for the amplifier no via-holes and backside processing is needed. The MMIC has a size of 0.9/spl times/3.2 mm/sup 2/.     

Amplifying four-wavelength combiner, based on erbium/ytterbium-doped waveguide amplifiers and integrated splitters

We report the successful system demonstration of a four-wavelength integrated-optics amplifying combiner. The arrangement consists of an all-connectorized 4/spl times/1 glass splitter followed by a 4.5-cm-long Er/Yb-doped waveguide amplifier. When injecting 120 mW of 975-nm laser diode pump, we record, in the amplifying section, 11.6 dB of net gain in the single pass configuration and 23 dB in the double pass as well as a noise figure of 4.5 dB. These results show the potentiality of ion-exchange technology for the fabrication of lossless telecommunication devices.     

35-dB gain Tm-doped ZBLYAN fiber amplifier operating at 1.65 /spl mu/m

We demonstrate the first high gain rare-earth-doped fiber amplifier operating at 1.65 /spl mu/m. It consists of ZBLYAN fiber with a Tm/sup 3+/-doped core and Tb/sup 3+/-doped cladding, pumped by 1.22 /spl mu/m laser diodes. It is possible to achieve efficient amplification with Tm/sup 3+/ ions if their amplified spontaneous emission (ASE) in the 1.75 to 2.0 /spl mu/m wavelength region is suppressed by doping Tb/sup 3+/ ions in the cladding. A two-stage-type fiber amplifier is constructed and a signal gain of 35 dB is achieved for a pump power of 140 mW. A gain over 25 dB is realized in the 1.65 /spl mu/m to 1.67 /spl mu/m wavelength region.     

Analysis of gain improvements through a pump reflector in Er/sup 3+/-doped optical amplifiers in the presence of concentration quenching

We numerically examine the small-signal gain improvements possible when the pump light is reflected in erbium-doped amplifiers suffering from concentration quenching caused by homogeneous and inhomogeneous energy-transfer upconversion. For an unquenched amplifier, the improvement is larger for a pump power of 20 mW than it is at 100 mW. On the other hand, at a pump power of 100 mW, the reflector is found to be efficient for a quenched amplifier, with a maximum improvement of 6.5 dB. We also find that the reflector is more efficient at 1.535 /spl mu/m than it Is at 1.550 /spl mu/m, under all examined operating conditions.     

A temperature-insensitive erbium-doped fiber amplifier for terrestrial wavelength-division-multiplexing systems

We have evaluated a variation in the temperature dependence of an erbium-doped fiber gain spectrum by a pump wavelength in the 980-nm band for the first time. By optimizing both the pump wavelength in the 980-nm band and a temperature-sensitive gain flattening filter, the gain change of an erbium-doped fiber amplifier was successfully suppressed to 0.18 dB/sub pp/ in the temperature range between 0/spl deg/C and 65/spl deg/C and the wavelength range of 37.0 nm.     

S-band single-stage EDFA with 25-dB gain using distributed ASE suppression

We propose a novel compact design for a single-stage S-band erbium-doped fiber amplifier, wherein distributed suppression of C-band amplified spontaneous emission is provided by optimized bend loss in a coaxial core fiber. Simulations show that /spl sim/25-dB unsaturated gain over 30-nm bandwidth (1495-1525) nm is achievable with the designed module, using a nominal pump power of 500 mW. The noise figure of the amplifier varies between 4.5 and 8 dB from 1495 to 1525 nm. By proper designing, we have also ensured that the gain ripple over the entire 30-nm bandwidth is 相似文献   

A Unilateral Parametric Amplifier

A theoretical investigation of a unilateral parametric amplifier using two varactor diodes indicates an improvement of unilateral stability over already existing types. A circuit is suggested which uses lower sideband idler energy for achieving forward gain and upper side-band energy to obtain substantial reverse loss. The phases of the applied signals and of the pump at the two varactors have to be 90/spl deg/ out of phase to achieve unilateral operation. Numerical evaluation of the theoretical results for a signal frequency at 4.0 GHz and a pump frequency at 12.0 GHz, assuming a diode junction capacitance of C/sub j/ = 0.4 pF and a bulk resistance of R/sub s/ = 2/spl Omega/ was done for several pump power levels. For 14 dB maximum forward gain, the 3 dB bandwidth of the gain versus frequency characteristic of the unilateral amplifier is about 18 percent smaller than that of the reflection type amplifier. The maximum reverse loss for these conditions is 7.3 dB. For lower forward gain the backward loss increases relatively until for very low gain values (about 1 dB) the amplifier is unconditionally stable, i.e., the backward loss is larger than the forward gain. The theoretical noise figure is about 1.95 dB at signal center frequency for 14 dB forward gain and, for /spl plusmn/80 MHz from the center frequency, only 0.1 dB higher than for the reflection type amplifier.     

Development of multiband phase shifters in 180-nm RF CMOS technology with active loss compensation

We present the design and development of a novel integrated multiband phase shifter that has an embedded distributed amplifier for loss compensation in 0.18-/spl mu/m RF CMOS technology. The phase shifter achieves a measured 180/spl deg/ phase tuning range in a 2.4-GHz band and a measured 360/spl deg/ phase tuning range in both 3.5- and 5.8-GHz bands. The gain in the 2.4-GHz band varies from 0.14 to 6.6 dB during phase tuning. The insertion loss varies from -3.7 dB to 5.4-dB gain and -4.5 dB to 2.1-dB gain in the 3.5- and 5.8-GHz bands, respectively. The gain variation can be calibrated by adaptively tuning the bias condition of the embedded amplifier to yield a flat gain during phase tuning. The return loss is less than -10 dB at all conditions. The chip size is 1200 /spl mu/m/spl times/2300 /spl mu/m including pads.     

Precision measurement method for cryogenic amplifier noise temperatures below 5 K

We report precision measurements of the effective input noise temperature of a cryogenic (liquid-helium temperature) monolithic-microwave integrated-circuit amplifier at the amplifier reference planes within the cryostat. A method is given for characterizing and removing the effect of the transmission lines between the amplifier reference planes and the input and output connectors of the cryostat. In conjunction with careful noise measurements, this method enables us to measure amplifier noise temperatures below 5 K with an uncertainty of 0.3 K. The particular amplifier that was measured exhibits a noise temperature below 5.5 K from 1 to 11 GHz, attaining a minimum value of 2.3 K/spl plusmn/0.3 K at 7 GHz. This corresponds to a noise figure of 0.034 dB/spl plusmn/0.004 dB. The measured amplifier gain is between 33.4 dB/spl plusmn/0.3 dB and 35.8 dB/spl plusmn/0.3 dB over the 1-12-GHz range.     

A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-/spl mu/m CMOS

A 24-GHz +14.5-dBm fully integrated power amplifier with on-chip 50-/spl Omega/ input and output matching is demonstrated in 0.18-/spl mu/m CMOS. The use of substrate-shielded coplanar waveguide structures for matching networks results in low passive loss and small die size. Simple circuit techniques based on stability criteria derived result in an unconditionally stable amplifier. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5-dBm with a 3-dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8-V supply. The chip area is 1.26 mm/sup 2/.     

Pump-to-signal transfer of low-frequency intensity modulation in fiber optical parametric amplifiers

This paper describes the theoretical and experimental investigation of the transfer of low-frequency intensity modulation (IM) from pump to signal in fiber optical parametric amplifiers (OPAs). It is first established that low-frequency IM of the pump remains unchanged over the length of the amplifier in spite of the presence of parametric gain. The pump-power dependence of the OPA gain is then used to calculate the instantaneous effect of pump IM on the signal and idler output powers. These calculations are performed for both one- and two-pump OPAs. The main predictions are that 1) the ratio /spl rho/ of the signal intensity modulation depth to that of the pump varies across the OPA gain spectrum and 2) for a 20-dB gain, /spl rho/ can exceed 10 at some wavelengths, which indicates that this effect can be detrimental. Experiments have been performed to verify these predictions. Using sinusoidal IM of the pump, the resulting amplified signal IM was measured, and the experimental results were found to be in good agreement with the theoretical predictions.     

Fabrication and characteristics of GaP-AlGaP tapered waveguide semiconductor Raman amplifiers

We have fabricated GaP-AlGaP tapered waveguide semiconductor Raman amplifiers, and analyzed the effect of tapering in pulse-pumped high-gain operation. The finesse measurement and 80-ps pulse pumped Raman amplification experiment were performed. Although the tapering has caused additional optical loss, the highest gain of 23 dB has been obtained for a tapered waveguide with input facet of 6.0 /spl mu/m/sup 2/ and back facet of 2.9 /spl mu/m/sup 2/ at averaged input power of 170 mW (peak power 26 W). It is shown that the optical loss of the pump light is more severe than the linear optical loss of the signal light when the gain is higher than 20 dB.     

Compact high gain erbium-ytterbium doped waveguide amplifier fabricated by Ag-Na ion exchange

A report is presented on an erbium-ytterbium doped waveguide amplifier fabricated by Ag-Na ion-exchange in a commercial phosphate glass substrate. The 31 mm-long active waveguide provides a maximum internal gain of 5.3 dB/cm at 1534 nm. The amplifier was fully characterised in terms of gain spectrum, noise figure, pump efficiency and gain saturation.     

Phase dynamics of semiconductor optical amplifiers at 10-40 GHz

The phase dynamics that occur in bulk InGaAsP-InP semiconductor optical amplifiers (SOAs) in response to picosecond pulse excitations at 10 and 40 GHz are studied experimentally and numerically for various amplifier lengths. The time dependencies of the phase changes and of the absolute gain of the amplifier are measured simultaneously. The total phase shifts induced by 1.5-ps pulses at 10 GHz are higher than /spl pi/ in SOAs with active region lengths between 0.5 and 2 mm and exceed 2/spl pi/ in a 1.5-mm-long amplifier. Phase shifts above /spl pi/ are measured at 40 GHz in 1.5- and 2-mm-long SOAs. The dependence of the total phase shift on the amplifier bias current and length and on pump pulse energy is investigated. Numerical simulations based on a comprehensive time-domain SOA model allow us to confirm the experimental results for a wide range of amplifier parameters. In particular, SOAs with lengths up to 5 mm have been modeled, and the calculations suggest that the maximum phase shifts occur in amplifiers of approximately 2-mm length. The phase dynamics measurements are illustrated at the example of an optical time division multiplexing add-drop multiplexer, based on a SLALOM switch, gated by 10- or 40-GHz control pulses. We find that simultaneous good dropping and clearing is possible if the length and the operating conditions of the SOA in the switch are chosen such as to induce a full /spl pi/ phase shift.     

A Reflected-Wave Ruby Maser with K-Band Tuning Range and Large Instantaneous Bandwidth

A novel maser concept is outlined and a unique design described which permits wide bandwidth and waveguide tuning range by employing four stages cascaded via cryogenically cooled circulators. Theoretical considerations for gain, bandwidth, gain ripple, and noise temperature are included. Operated on a chased-cycle helium refrigerator with a superconducting persistence-mode magnet, the four-stage amplifier is tunable from 18.3 to 26.6 GHz with 30 dB of net gain and achieves 240 MHz of 3-dB bandwidth near the center of this band. The measured noise temperature is 13/spl plusmn/2 K referred to the room-temperature input flange. Applications are foreseen utilizing cooled parametric downconverters and upconverters with this amplifier at IF to extend the low-noise performance up to millimeter frequencies and down to L-band for radio astronomy and planetary spacecraft communication.