Preparation and properties of Bi2−x As x S3 thin films by solution-gas interface technique

The solution gas interface technique by which thin films of Bi_2−x As _x S₃ were deposited is described in this paper. The semiconducting properties of the interface grown Bi_2−x As _x S₃ thin films are studied. The optical absorption, dark resistivity and thermoelectric power of the films were studied and results are reported.     

Role of Coexistence of Superconductivity and Paramagnetism in Magnetostriction of High-T c Superconductors

Total magnetostriction in the superconducting state for high T _c superconductors has been separated into critical state and paramagnetic components in terms of a H(x) dependent magnetic flux density. We show that the paramagnetic part is χ(2+χ)〈H(x)²〉, where χ is paramagnetic susceptibility. We have reproduced successfully ΔL/L−H _a curves measured by de la Fuente et al. (Phys. C 244:214, [1995]), in which they clearly observed coexistence of superconductivity and paramagnetism, employing the concepts presented in this work.      

Superconducting transition temperatures in the Ru-1232 system, RuSr2(Gd1? x Ln x Ce1.8Sr0.2)Cu2O z (Ln = Sm, Dy, and Ho)

We have investigated effects of the lanthanide element Ln and the composition changes on the superconducting transition temperatureT _c in the Ru-1232 system, RuSr₂(Gd_1−x Ln _x Ce_1.8Sr_0.2)Cu₂O _z (Ln = Sm, Dy, and Ho). At first, in the case of the samples with Ln = Sm among almost the single 1232 phase samples, the values of the superconducting onset temperatureT _co are almost the same forx=0.00−0.15, and each of the lattice parametersa andc is almost constant. While, in each of the cases of the samples with Ln = Dy and Ho, the sample withx=0.05 shows the maximum values for both the superconducting onset temperatureT _co and the zero resistivity temperatureT _cz. Especially for the sample with Ln = Dy, the values ofT _co andT _cz are 18.5 and 6.5 K, respectively. These are higher than those of the mother sample of RuSr₂(GdCe_1.8Sr_0.2)Cu₂O _z . Moreover, from variations ofT _co, lattice parameters ofa andc in the RuSr₂(Gd_1−x Dy _x Ce_1.8Sr_0.2)Cu₂O _z system as a function of Dy contentx, the relationship between the superconducting transition temperature and the lattice parameters in the present system are investigated.     

Non-isothermal crystallization of As2Se3 glass

The results of non-isothermal crystallization studies performed at different heating rates on batches of As₂Se₃ glasses prepared from melts at 400°C, 600°C and 800°C are reported. The peak temperature of crystallizationT _p, the enthalpy of crystallization ΔH _c and the activation energy for crystallizationE _c are independent of the melt temperature used in the preparation. Bulk nucleation with three-dimensional growth of crystals is indicated for As₂Se₃. The values of ΔH _c andE _c are found to be respectively 23·3 ± 0·9 cal/g and 36·5 ± 0·9 kcal/mol for As₂Se₃.     

How Grain-Boundaries Influence the Intergranular Critical Current Density of Cu1−x Tl x Ba2Ca3Cu4O12−δ Superconductor Thin Films?

The insulating and metallic behavior of the grain-boundary weak links has been studied in thallium rich and the samples with small amount of thallium in the charge reservoir layer of Cu_1−x Tl _x Ba₂Ca₃Cu₄O_12−δ superconductor thin films. The influence of the nature of grain boundaries on the inter-granular critical current density (J _c) has also been investigated. From the power law dependence of H _ac∼(1−T _p/T _c) ⁿ , it was observed that n=1 gives a best fit for the J _c of thallium rich samples and n=2 provides a best fit for the J _c of the samples with small amount of thallium. The polycrystalline thin film samples showing the power law dependence of J _c as n=1 make superconductor-insulator-superconductor (SIS) type while the samples with n=2 follow superconductor-normal metal-superconductor (SNS) types of Josephson junctions. The insulating grain boundaries decrease the inter-granular Josephson coupling and hence the transport properties are suppressed.      

Effect of oxygen content on the electrical properties of YBa2Cu3O7−x single crystals

The effect of oxygen content in the single crystals of high-temperature superconductor YBa₂Cu₃O_7−x on the electrical resistivity, the Hall effect in the plane perpendicular to thec axis and the energy gap Δ, measured with tunnelling electron microscope, has been studied. The distribution of the gap along the surface of the crystal was also studied. The results of the study on the relationship between the magnitude of the energy gap Δ and the superconducting transition temperatureT _c of single crystals with various oxygen contents are approximated by the linear dependence 2Δ_av=4·4kT _c .     

History effects in low-field magnetoresistance of BPSSCO polycrystals

Low-field (H<40 G) magnetoresistance measurements have been made on Bi_1·6Pb_0·4Sr₂Ca₂Cu₃O₁₀ polycrystals at several temperatures between 80 and 105 K. Considerable hysteresis in ρ(H) is found in a zero-field-cooled sample when the applied field is increased from 0 to a maximum value and then lowered back to 0 at all temperatures. The observation of hysteresis is taken as an evidence for field trapping in the grains. We show that the hysteresis in ρ(H) occurs for applied fields much lower than that at whichdρ(H)/dH exhibits a discontinuity. In addition, we find that when the applied magnetic field (H _a) is lowered from a maximum field, the effective intergranular field,H _eff, becomes zero forH _c>0, which gives rise to a minimum in ρ(H).     

Synthesis of high-energy-density Pr2Fe14−x Co x B,x⩽3, magnets for practical applications

Stable magnetic powders, of 1–2μm particle size, of partially Co-substituted, Pr₂Fe_14−x Co _x B,x⩽3, alloys together with 2–4 at% excess Pr were prepared by rapidly quenching the associated melts into thin ribbons and then mechanical attriting the ribbons in the refined particle sizes. The saturation magnetizationM _s, remanent magnetizationJ _r, intrinsic coercivityH _ci and Curie temperatureT _c were studied in characterizing the powders for fabricating into sintered or polymer bonded magnets. It is found that the smallx=0·4–0·8 substitution of the Co on Fe sites in this series sensitively leads to an increase in the value ofH _ci, by as much as 40%, with the optimum value of 21 kOe atx ∼ 0·55, together with an improvement in theT _c from 292°C to 325°C, without significantly diluting theM _s∼150 emu/g andJ _r∼8·0 kG values. The Co-substituted Pr₂Fe₁₄B alloy particles are better stable and corrosion resistant in ambient atmosphere. The results are discussed with the microstructure and comparison with the data for Nd₂Fe₁₄B powders processed under the same conditions. Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995     

Acoustic investigations on PbO-Al2O3-B2O3 glasses doped with certain rare earth ions

Elastic moduli (Y, η), Poisson’s ratio (σ), microhardness (H) and some thermodynamical parameters such as Debye temperature (θ_D), diffusion constant (D _i),latent heat of melting (ΔH _m) etc of PbO-Al₂O₃-B₂O₃ glasses doped with rare earth ions viz. Pr³⁺, Nd³⁺, Sm³⁺, Eu³⁺, Tb³⁺, Dy³⁺, Ho³⁺, Er³⁺ and Yb³⁺, are studied as functions of temperatures (in the temperature range 30–200°C) by ultrasonic techniques. All these parameters are found to increase with increasing atomic numberZ of the rare earth ions and found to decrease with increasing temperature of measurement. From these results (together with IR spectra of these glasses), an attempt is made to throw some light on the mechanical strength of these glasses.     

Thermoelectric power in Gd3+-substituted Cu-Cd ferrites

Polycrystalline Cd _x Cu_1−x Fe_2−y Gd _y O₄ ferrites fory=0·0 and 0·1 were prepared by ceramic technique. X-ray diffractograms of powder samples show cubic symmetry withx⩾0·2 fory=0·0 and 0·1, while compositions withx=0·0 fory = 0·0 and 0·1 are tetragonal. The thermopower measurements for Gd³⁺-undoped ferrites in the temperature range 300 K to 788 K shown-type conductivity forx⩾0·2. The substitution of Gd³⁺ changedn-type conductivity of the compositions top-type. The mobilities calculated show decreasing trend on Gd³⁺ substitution. The values of activation energy ΔE and drift mobilityE _d suggest polaron formation in substituted samples. The conduction mechanism is explained on the basis of localized model and formation of Gd³⁺+Fe²⁺ stable pairs at B site and Cu¹⁺+Fe³⁺ at A site.     

Crystal structure and resistivity studies on PrBa2 −x Pr x Cu3O7 −y oxide system

The compound PrBa₂Cu₃O_{7 −y} is not superconducting while most other RBa₂Cu₃O_{7 −y} (R=rare earth) compounds exhibit superconductivity in the 90K range. The system PrBa_{2 −x} Pr _x Cu₃O_{7 −x} has been prepared to study the effect of excess Pr at the Ba site on the structure, resistivity and magnetic behaviour of this system. It is observed that single-phase compounds in the above series form forx=0·8—that is up to the composition Pr_1·8Ba_1·2Cu₃O_{7 −y} . While stoichiometric PrBa₂Cu₃O_{7 −y} is orthorhombic, the compounds with excess Pr show tetragonal structure. Four-probe dc resistivity measurements show that all the single-phase compounds in the above series do not exhibit superconductivity and are semiconducting down to 12 K. Magnetic susceptibility measurements reveal deviation from Curie-Weiss behaviour starting at a characteristic temperature, which is taken to be the ordering temperature (T _N ) of the Pr moments. BothT _N and overall resistivity decrease with increasingx and may have a common origin.     

Enhanced Superconducting Properties of Air-Processed GdBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7-δ</Subscript> Single Domains with BaCO<Subscript>3</Subscript>/BaCuO<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript> Addition

Single domain GdBa₂Cu_7-δ (Gd123) bulk superconductors were fabricated in air by top-seeding melt-texture growth. Performance of the air-processed Gd123 was successfully enhanced by addition of both BaCO₃ and BaCuO_2−x , which suppress the formation of Gd_1+x Ba_2−x Cu₃O_7-δ solid solutions. The optimum doping amount ranges from 0.05 to 0.15, M BaCO₃ and 0.05 to 0.1, M BaCuO_2−x per molar Gd123. The distribution of the second phase particles was observed by scanning electron microscopy. A narrow band formed by Gd₂BaCuO₅ particle concentration appeared around the seeding zone in both a–b plane and c-growth sector in Gd123 single grain. Trapped magnetic field density reached 0.67, T for sample with 24 mm in diameter and 8, mm in thickness and a high critical current density J _c up to 91,200, A/cm² was achieved at 77, K under self-field.     

Structural and optical properties of CuIn0.35Al0.65Se2 thin films

CuIn_0.35Al_0.65Se₂ thin films were deposited onto glass substrates by flash evaporation method. The films deposited at substrate temperatures 613–633 K were nearly stoichiometric, polycrystalline and single phase showing chalcopyrite structure with lattice parameters a = 0.569 nm and c = 1.124 nm. The optical absorption studies revealed a threefold optical structure near the fundamental edge with E _g1 = 1.75 eV, E _g2 = 1.81 eV and E _g3 = 1.99 eV. The crystal-field (Δ_CF) and spin–orbit (Δ_SO) splitting parameters were evaluated.     

Heterogeneous nucleation and growth of polycrystalline silicon

The heterogeneous nucleation theory of silicon on SiO₂ and Si₃N₄ substrates has been developed using classical theory. It is shown that the experimental observations can be explained on the basis of the bond energies of O-H, N-H and Si-H. A reaction model is proposed for the growth of silicon on silicon from silane, using hydrogen as a carrier gas in the temperature region 600–900°C. The growth rate of silicon is shown to be equal toP _{SiH 4} P _{H 2} when the partial pressure of hydrogen is high, and is independent of the total pressure and the partial pressure of hydrogen in the lower region.     

Room-Temperature Photomagnetic Effect of Fe<Subscript>3</Subscript>Ga<Subscript>4</Subscript> Grown on GaAs Substrates

Ga–As–Fe composite films prepared by molecular beam epitaxy at 600°C on GaAs(100) substrates with the stacking sequence of [100-nm GaAs/50-nm Fe₃Ga_{2− x} As _x /100-nm GaAs] exhibit the distinct photo-enhanced magnetization at room temperature. Transmission electron microscopy reveals the formation of metamagnetic Fe₃Ga₄ grains on the sample surface. Illumination power dependence of the enhanced magnetization has been carefully compared with the antiferromagnetic-type magnetization–temperature (M–T) curve (Neel temperature of T _N = 340–390 K), from which we have discussed the existence of photon-mode photo-enhanced magnetization of some sort in addition with the enhancement due to the light-induced heating.     

Structural and mechanical characterization of BCxNy thin films deposited by pulsed reactive magnetron sputtering

BC_xN_y thin films deposited at 250 °C by pulsed reactive magnetron sputtering of a B₄C target in an Ar/N₂ plasma were studied by elastic recoil detection analysis, Fourier transform infrared, Raman, and photoelectron spectroscopy, electron microscopy, and nanoindentation. In the concentration range of 6% to 100% N₂ in the sputter plasma the segregation into nanocrystalline hexagonal boron nitride and amorphous sp² carbon is the dominant process during the film growth. The stoichiometric ratio and structural details of the major phases depend on the N₂ concentration in the plasma and have significant influence on the Young′s modulus and the elastic recovery of the BC_xN_y thin films.     

Surface etching effects of amorphous C:H and CNx:H films formed by supermagnetron plasma for field emission use

Supermagnetron plasma was used to deposit amorphous hydrogenated carbon (a-C:H) and hydrogenated carbon nitride (a-CN_x:H) films for field-emission devices using i-C₄H₁₀/(H₂ or N₂). It was also used to improve the field-emission characteristics by surface etching using N₂/H₂ plasma. The best emission threshold electric field (E_TH) was 13 and 12 V/μm for devices using as-deposited a-C:H and as-deposited a-CN_x:H films, respectively, while they were remarkably improved to 11 and 8 V/μm by surface etching using N₂/H₂ (120/40 sccm) gas, though surface roughness was slightly increased by the surface etching. The hardness of as-deposited films was higher than 22 GPa.     

PZT-36/NiCo0.02Cu0.02Mn0.1Fe1.8O4 − δ magnetoelectric rod composites with 1-3, 3-1, and 1-1 connectivity

We have developed a technique for the fabrication of piezoelectric/ferrite rod composites with 1-3, 3-1, and 1-1 connectivity, which has the advantage of employing piezoelectric ceramics poled under optimal conditions. All types of rod composites produced by this technique have better piezoelectric and magnetoelectric properties in comparison with 2-2 layered structures produced in the same way. The magnetoelectric coefficient of the composites has a maximum at equal volume fractions of the components (0.5PZT-36/0.5NiCo_0.02Cu_0.02Mn_0.1Fe_1.8O_{4 − δ}), independent of the connectivity type of the composites. The best piezo- and magnetoelectric properties are offered by the 1-1 composites, which have ΔE/ΔH = 140 mV/(cm Oe) at 1 kHz. The ΔE/ΔH of the composites correlates with their |d ₃₃/d ₃₁| ratio: with a decrease in this ratio, the magnetoelectric coefficient increases.     

Conductometric Study of Some Metal Halides in Glycerol + Water Mixtures

Electrolytic conductivities of potassium halides, KX (X = Cl⁻, Br⁻, I⁻) have been investigated in 10, 20, and 30 mass% glycerol + H₂O mixtures at 298.0, 308.0, and 318.0 K. The conductance data have been analyzed by the Fuoss-conductance–concentration equation in terms of the limiting molar conductance (Λ⁰), the association constant (K _A ), and the distance of closest approach of ion (R). The association constant (K _A ) tends to increase in the order: 10 mass% < 20 mass% < 30 mass% glycerol + water mixtures, while it decreases with temperature. Thermodynamic parameters ΔH ⁰, ΔG ⁰, and ΔS ⁰ are obtained and discussed. Also, Walden products (Λ⁰η) are reported. The results have been interpreted in terms of ion–solvent interactions and structural changes in the mixed solvents.     

Structural and optical properties of spray pyrolytically prepared Fe2O3 thin films

Fe₂O₃ thin film was prepared using aqueous solution of FeCl₃ by spray pyrolysis. The substrate temperature was 450°C. The lattice parametersa andc for different concentrations were calculated from X-ray diffraction study. Hexagonal structure of the Fe₂O₃ thin film was confirmed. Band gap values of Fe₂O₃ prepared from different concentrations were determined from optical transmission data.