Dependence of SAW resonator 1/f noise on device size

Experiments were conducted with eight 450-MHz surface acoustic wave (SAW) resonators which demonstrate that a resonator's 1/f noise depends approximately inversely on the active acoustic area of the device. This observation is consistent with a proposed theory that 1/f noise in acoustic resonators is caused by localized velocity or dimensional fluctuations.     

Phase noise in surface-acoustic-wave filters and resonators

Measurements of the phase noise modulation imparted on UHF carriers by surface-acoustic-wave (SAW) filters and resonators have been made using an HP 3047 spectrum analyzer. Three different types of SAW phase noise were observed. One type can be explained by temperature fluctuations. It is characterized by a spectral density of phase fluctuations which decreases as 1/f(2). The predominant noise mechanism in most SAW devices has a 1/f spectral density. The source of this noise is unknown, but it appears to be associated with both acoustic propagation and transduction. In filters fabricated on lithium niobate substrates, a third noise mechanism is evidenced. This mechanism produces nonstationary noise bursts that appear to originate in the transducer region. Experiments have been carried out on substrate materials, transducer metallizations, and over acoustic path lengths. The means by which low-frequency fluctuations are mixed to the carrier frequency have been studied.     

Flicker noise measurement of HF quartz resonators

Frequency flicker of quartz resonators can be derived from the measurement of S(phi) (f), i.e., the power spectrum density of phase fluctuations phi. The interferometric method appears to be the best choice to measure the phase fluctuations of the quartz resonators because of its high sensitivity in the low power conditions, which is required for this type of resonator. Combining these two ideas, we built an instrument suitable to measure the frequency flicker floor of the quartz resonators, and we measured the stability of some 10-MHB high performance resonators as a function of the dissipated power. The stability limit of our instrument, described in terms of Allan deviation sigma(y)(tau), is of some 10(-14).     

Reduction of quartz crystal oscillator flicker-of-frequency and white phase noise (floor) levels and acceleration sensitivity via use of multiple resonators

Through the use of N series-connected quartz crystal resonators in an oscillator circuit, a 10 log N reduction in both flicker-of-frequency noise and white phase-noise (floor) levels has been demonstrated. The reduction in flicker noise occurs as a result of the uncorrelated short-term frequency instability in each of the resonators, and the reduction in noise floor level is a simple result of the increase in net, allowable crystal drive level. This technique has been used in 40-, 80-, and 100-MHz AT-, BT-, and SC-cut crystal oscillators using low flicker-of-phase noise modular amplifier sustaining stages, and four series connected crystals. Total (four crystal) power dissipations of up to 30 mW have been utilized. State-of-the-art, flicker-of-frequency noise levels have been obtained with noise-floor levels (80 MHz) as low as -180 dBc/Hz. Four- to five-fold reduction in acceleration sensitivities has been determined     

Surface-related phase noise in SAW resonators

With the advent of nanotechnologies, electronic devices are shrinking in thickness and width to reduce mass and, thereby, increase frequency and speed. Lithographic approaches are capable of creating metal connections with thickness and lateral dimensions down to about 20 nm, approaching the molecular scale. As a result, the dimensions of outer particles are comparable with, or even larger than, those of active or passive regions in electronics devices. Therefore, directing our attention toward the effect of surface fluctuations is of practical significance. In fact, electronic device surface-related phenomena have already received more and more attention as device size decreases. In connection with surface phase noise, selection of a suitable device with high surface sensitivity is important. In this paper, high Q-value surface acoustic wave resonators were employed because of their strong sensitivity to surface perturbation. Phase noise in SAW resonators related to surface particle motion has been examined both theoretically and experimentally. This kind of noise has been studied from the point of view of a stochastic process resulting from particle molecular adsorption and desorption. Experimental results suggest that some volatile vapors can change flicker noise 1/f and random walk noise 1/f ². An analysis has been made indicating that these effects are not associated with Q value variation, but are generated by the change in the dynamic rate of adsorption and desorption of surface particles. Research on particle motion above the device substrate might explain the differences observed from the model based only on the substrate itself. Results might lead to a better understanding of the phase noise mechanism in micro-electronic devices and help us to build oscillators with improved performance     

Design of SAW synchronous resonators on ST cut quartz

Surface acoustic wave (SAW) resonators on ST cut quartz, with synchronous placement of the interdigital transducers (IDT), were designed, fabricated, and measured. The basic structure of the resonators was a two-port one. The one-port resonators were obtained by parallel connection of the two IDT or by short circuiting one of them. The IDT were apodized to eliminate coupling to spurious modes. The transfer function of the two-port resonators was calculated by using the scattering matrix method. Several models of these resonators were investigated in the frequency range from about 300 to 715 MHz. By matching the theoretical and experimental transfer functions, the loss coefficient as a function of frequency and the SAW velocity in the reflector area as a function of aluminium layer thickness were determined. The responses of the resonators were free of any spurious modes.     

High Q metal strip SSBW resonators using a SAW design

An experimental study of metal strip surface skimming bulk wave (SSBW) resonators using a surface acoustic wave (SAW) design is presented. Characteristics of SSBW and SAW resonators fabricated with the same photolithographic mask are compared and discussed. High Q low-loss SSBW resonators are achieved using a conventional two-port SAW resonator design and taking special care of the distance L between both interdigital transducers, the metal thickness h/lambda (lambda=acoustic wavelength) and the finger-to-gap ratio. Best overall performance of the SSBW devices in this study is achieved at L=nlambda/2-lambda/4 (compared with L=nlambda/2-lambda/8 for SAW resonators), h /lambda=1.6% (compared with 2% for SAW), and finger-to-gap ratio close to 1. The best device fabricated shows an unloaded Q of 5820 and an insertion loss of 7.8 dB at 766 MHz. The SSBW resonant frequency shows a stronger dependence on the metal thickness than the SAW one. This problem, however, is readily solved by frequency trimming using a CF(4) plasma etching technique. SSBW resonator can be trimmed by 0.2% down in frequency (compared with 0.05% for SAW) without affecting their performance.     

Quantum 1/f effect in resonant biochemical piezoelectric and MEMS sensors

Piezoelectric sensors used for the detection of chemical agents and as electronic nose instruments are based on bulk and surface acoustic wave resonators. Adsorption of gas molecules on the surface of the polymer coating is detected by a reduction of the resonance frequency of the quartz disk, subject also to fundamental quantum 1/f frequency fluctuations. The quantum 1/f limit of detection is given by the quantum 1/f formula for quartz resonators. Therefore, for quantum 1/f optimization and for calculation and improvement of the fundamental sensitivity limits, we must avoid closeness of the crystal size to the phonon coherence length, which corresponds to the maximum error and minimal sensitivity situation, as shown here. Adsorbed masses below the pg range can be detected. Microelectromechanical system (MEMS) resonators have provided a possibility for the nanominiaturization of these sensors. Essential for integrated nanotechnology, these resonant silicon bars (fingers) are excited magnetically or electrically through external applied forces, since they are not piezoelectric or magnetostrictive. The application of the quantum 1/f theory to these systems is published here for the first time. It provides simple formulas that yield much lower quantum 1/f frequency fluctuations for magnetic excitation, in comparison with electrostatically driven MEMS resonators.     

Relationship of AM to PM noise in selected RF oscillators

We have studied the amplitude modulation (AM) and phase modulation (PM) noise in a number of 5 MHz and 100 MHz oscillators to provide a basis for developing models of the origin of AM noise. To adequately characterize the AM noise in high performance quartz oscillators, we found it necessary to use two-channel cross-correlation AM detection. In the quartz oscillators studied, the power spectral density (PSD) of the f(-1) and f(0) regions of AM noise is closely related to that of the PM noise. The major difference between different oscillators of the same design depends on the flicker noise performance of the resonator. We therefore propose that the f(-1) and f(0) regions of AM and PM noise arise from the same physical processes, probably originating in the sustaining amplifier.     

Modeling of a short-term stability measuring system of quartz crystal resonators

A new numerical model of a short-term stability measuring system of quartz crystal resonators is presented. It is based on the phase bridge method using a pair of resonators driven by a low-noise source. The output signal, obtained with a phase detector, is proportional to the phase difference introduced by the resonators. The numerical transfer function of each bridge path is given by the model. The output spectral density of the phase fluctuations is computed from these transfer functions and the numerical approximation of the low-noise source. The model was applied to third overtone, SC-cut, 10 MHz BVA quartz crystal resonators. It enables the rejection of the source noise versus the resonant frequency of quartz crystal resonators to be quantified.     

Conversion of 1/f fluctuations in crystal resonator within an inter resonance gap

This paper presents general relationships for transformation coefficients of BAW or SAW crystal resonator amplitude and phase fluctuations through the 1/f flicker noises of its motional and static equivalent parameters within the resonator inter resonance gap. Approximate functions of phase and amplitude power spectral densities are found based on Leeson's oscillator open loop model and are given with detailed consideration of Butler and Colpitts modes of operation with the assumption of full and zero inter noise correlation. It is also substantiated that a low-noise frequency region of crystal resonator operation exists in which the fluctuation influence of its motional inductance and capacity tend to zero in oscillators. Five examples are given as an illustration of a good agreement of the measured data with the prediction curves, giving a possibility of resonator power phase and amplitude spectral densities valuation at an arbitrary offset frequency from the carrier through the 1/f flicker noises of resonator parameters. Emphasis is laid in conclusion on the possible way of parameter spectral densities definition.     

Extremely low phase noise UHF oscillators utilizing high-overtone, bulk-acoustic resonators

High-overtone, bulk acoustic resonators (HBAR) have been designed that exhibit 9-dB insertion loss and loaded Q values of 80000 at 640 MHz with out-of-phase resonances occurring every 2.5 MHz. These resonators have been used as ovenized frequency-control elements in very low phase noise oscillators. The oscillator sustaining stage circuitry incorporates low-1/f noise modular RF amplifiers, Schottky-diode ALC, and a miniature 2-pole helical filter for suppression of HBAR adjacent resonant responses. Measurement of oscillator output signal flicker-of-frequency noise confirms that state-of-the-art levels of short-term frequency stability have been obtained. Sustaining stage circuit contribution to resulting oscillator flicker-of-frequency noise is 7-10 dB below that due to the resonators themselves. At 16-dBm resonator drive, an oscillator output signal white phase noise floor level of -175 dBc/Hz is achieved.     

The state of the art of flicker frequency noise in BAW and SAW quartz resonators

Experimental results of the last 15 years are reviewed. Noise properties of crystal filters and oscillators are reported, along with practical measurements. It is shown that the additional phase fluctuations are compensated by frequency fluctuations and vice versa. With the assistance of these theoretical results the flicker and white frequency noise coefficients, h(-1) and h(0), respectively, are plotted versus unloaded Q and carrier frequency f(0) for the measured and published crystal oscillator noise characteristics. The dependence of h(-1) approximately 10(-12.75) Q(2) (u) is verified.     

1/f frequency noise of 2-GHZ high-Q thin-film sapphire resonators

We present experimental results on intrinsic 1/f frequency modulation (FM) noise in high-overtone thin-film sapphire resonators that operate at 2 GHz. The resonators exhibit several high-Q resonant modes approximately 100 kHz apart, which repeat every 13 MHz. A loaded Q of approximately 20000 was estimated from the phase response. The results show that the FM noise of the resonators varied between S_y (10 Hz)=-202 dB relative (rel) to 1/Hz and -210 dB rel to 1/Hz. The equivalent phase modulation (PM) noise of an oscillator using these resonators (assuming a noiseless amplifier) would range from L(10 Hz)=-39 to -47 dBc/Hz     

Temperature-stable double SAW resonators

The temperature stability of SAW resonators on quartz can be enhanced by means of double resonators. The turnover temperatures of the double resonators' components, called single resonators, are positioned above and below room temperature. As a consequence, the temperature coefficients of frequency of the 1st order (TCF1) have opposite signs at room temperature, leading to the vanishing TCF1 of the double resonators. Frequently, different turnover temperatures are adjusted by different propagation directions on an ST cut of quartz. An overview of known and new methods for compensating the temperature coefficient of frequency of the 2nd order (TCF2) of two-port and one-port SAW double resonators is given. A concept by means of which temperature-stable circuits of single resonators are found is described. Two types of temperature-stable double resonators found by applying that concept are treated in detail: 1) a two-port resonator composed of two cascaded two-port resonators and a coupling inductance, and 2) a one-port resonator comprising a series connection of one-port resonators with an inductance in parallel with each single resonator. The substrates are 35.5 degrees rotY cuts of quartz. In both cases, the shift of resonance frequency within the temperature range from -30 degrees C to 70 degrees C is smaller than 20 ppm.     

Frequency stability of high-overtone bulk-acoustic resonators

The results of phase noise measurement for high-overtone bulk-acoustic resonators (HBARs) for use in high-performance oscillators, operating at 640 MHz with insertion losses of 10-15 dB and unmatched Qs greater than 110 K are reported. Noise measurements made on these resonators with input drive levels of 16 dBm have shown self-noise levels of S(y)(f=100 Hz)=8.0x10(-26) for 1/f noise which represents state-of-the-art for a UHF resonator.     

Design and test of 3 GHz, fundamental mode surface transverse wave resonators on quartz

Surface transverse wave (STW) resonators, based on the propagation of high velocity shear horizontal waves on Y-rotated quartz were designed, fabricated and tested. A model is presented to predict the resonant frequency of a 3-grating structure as a function of design parameters such as periodicities, metal thickness, and finger-to-gap ratio. Experimental devices have been fabricated by direct e-beam lithography with linewidth geometries in the range of 0.3-0.5 mum, and an operating frequency close to 3 GHz in fundamental mode. Two different designs using either a quasi synchronous structure (type 1) or a change of periodicity inside the cavity (type 2) were tested. The best experimental factor of merit is close to the best results already published for quartz STW resonators.     

Chemical sensor based on surface acoustic wave resonator using Langmuir-Blodgett film

A one-port surface acoustic wave (SAW) resonators incorporating Langmuir-Blodgett (LB) films has been investigated. SAW sensors are one potential applications of SAW devices. Most of the work reported on SAW sensor concerns delay lines. In this paper we characterize the mass loading effects of one-port resonators by depositing successive monolayers of LB films onto the surface. A 90 MHz SAW gas-phase sensor has been fabricated on an ST cut quartz substrate, and one-port resonator configurations have been used as the sensing element. Ultra thin monolayers of arachidic acid and arachidic acid ethyl ester have been deposited using the LB method. The resonant frequencies and the Q values have been measured as sensor response. Experimental results show that the Q values and the resonant frequencies of the one-port SAW resonator vary with film mass loading on the SAW device surface.     

Extremely low-phase-noise SAW resonators and oscillators: design and performance

The authors describe prototype low-noise SAW (surface acoustic wave) resonator oscillators which have demonstrated state-of-the-art phase-noise performance not only at their fundamental operating frequencies in the 400- to 600-MHz range but also after 16x frequency multiplication to X-band as well. SAW resonator designs with overmoded cavities, very wide apertures, and dual apertures, as well as modified fabrication techniques, have been used to realize an overall reduction in an oscillator's phase-noise spectrum, i.e. white phiM, flicker FM, and random-walk FM. The S resonators can typically handle incident RF power in excess of +20 dBm, a key requirement to achieving an extremely low oscillator-phase-noise floor. A novel burn-in procedure at relatively high incident-RF-power levels (>27 dBm) was used to reduce both the flicker FM and random-walk FM phase-noise levels. Using these various techniques, a 5- to 15-dB improvement in the overall phase-noise spectrum for several prototype oscillators was demonstrated.     

The characterization of sputtered polycrystalline aluminum nitrideon silicon by surface acoustic wave measurements

Polycrystalline aluminum nitride films were deposited on Si₃ N₄ coated (100) silicon substrates by the reactive sputtering method. We have carried out experiments to evaluate the effect of AlN material parameters on the SAW characteristics. The SAW transducers were fabricated by forming interdigitated Al electrodes on top of the AlN films and transmission measurements made over the frequency range from 50 MHz to 1.5 GHz. The SAW characteristics were correlated with material parameters of crystallite orientation, grain size, surface morphology and oxygen concentration. A key material parameter affecting the SAW characteristics was found to be the preferred degree of crystallite orientation with the c-axis normal to the plane of the substrate. The better oriented the AlN grains, the stronger the SAW response, the higher the SAW phase velocity, and the lower the insertion and propagation losses over the entire frequency range of measurement. Above 500 MHz the propagation losses of the well oriented films followed a frequency squared dependence only slightly higher than the reported values for the best epitaxial films. The coupling factors deduced from the transducer characteristics are in the upper range of values reported by Tsubouchi for epitaxial AlN films deposited on the basal plane of sapphire. There was a strong correlation between the X-ray diffraction intensity from the (002) planes and the oxygen content in the films