Electrical properties of glasses in the Na2O–MoO3–P2O5 system

A range of coloured electronic or mixed ionic–electronic glasses has been evidenced in the Na₂O–MoO₃–P₂O₅ system. The properties of these glasses have been studied along different composition lines corresponding either to a fixed Na₂O content or a constant Mo/P ratio. An EPR spectroscopy investigation of these glasses has allowed to determine the Mo⁵⁺ ion percentages in these materials. The electrical properties of these glasses have been studied by impedance spectroscopy, and the electronic and ionic contributions have been evaluated. The properties of these sodium glasses have been compared with those of lithium glasses with the same compositions.     

Preparation and characterization of some substituted bioglasses and their ceramic derivatives from the system SiO2–Na2O–CaO–P2O5 and effect of gamma irradiation

Glasses having chemical composition based on Hench's bioglass^® and with some substituted oxides were prepared and crystallized through thermal treatments. These glasses and corresponding glass–ceramics were characterized by Fourier transform infrared spectroscopy (FTIR) either through absorption or reflection studies. Chemical corrosion of the prepared glassy and crystalline samples as grains was examined by the action of 0.1 M HCl or NaOH solutions or by distilled water. Also, UV–vis absorption measurements were carried out before and after successive gamma rays to reveal their response to ionizing radiation.

The formation of hydroxyapatite layer was checked by FTIR studies and X-ray diffraction experiments which show that the crystalline soda lime silicate phase (1Na₂O·2CaO·3SiO₂) is separated as the main phase in all tested glasses beside some secondary phases depending on the introduced substituted oxide. The corrosion behavior was found to vary depending on the type of the introduced oxides and their ability to freely ion exchange and dissolve in the leaching solution.     

Thermoluminescence of Tb doped Gd2O2S phosphor

Thermoluminescence (TL) of gadolinium oxysulfide activated with terbium (Gd₂O₂S:Tb) is investigated. The glow curves of Gd₂O₂S:Tb phosphor recorded in the temperature range of 93–500 K with a heating rate of 0.52 K s⁻¹ shows five prominent glow peaks. Comparison of the glow curves exhibited by different samples prepared with varying firing conditions reveals some interesting results. In this phosphor capture centers are mainly formed due to variable valency activators, trace impurities and point defects, which create defects in the sub-lattice. The observed TL spectra suggest a multiplicity of electron and hole traps. The main peak that observed at 150 K is attributed to point defects arising out of sulfur vacancies. These vacancies give rise to electron traps, which are found to be associated with terbium centers. This is confirmed by the monochromatic glow curves observed at wavelengths corresponding to the characteristic terbium emission (⁵D₃–⁷F_n, ⁵D₄–⁷F_n). Removal of this glow peak under H₂S firing indicates the localized character of the concerned centers.     

Highly stable persistent spectral hole burning in Eu ions doped oxy-fluoride glasses of 30CaF2–10Al2O3–60B2O3

High temperature persistent spectral hole burning up to room temperature has been observed in Eu³⁺ ions doped oxy-fluoride glasses with a composition of 30CaF₂–10Al₂O₃–60B₂O₃ (mol%) melted in a reducing atmosphere. The hole stability was studied through light-induced hole refilling and temperature cycling experiments. The burned holes survive thermal cycling to 300 K due to a high barrier height of 0.69 eV in the sample.     

Glass formation and conductivity in the Pb2P2O7–Ag4P2O7–AgI system

A large glass-forming domain has been identified in the Pb₂P₂O₇–Ag₄P₂O₇–AgI system. The physical properties have been determined as a function of AgI content. The ionic conductivity has been studied as a function of the Ag⁺ ion total concentration and the Ag⁺ ion concentration issued from the AgI component. The structure and electrical properties of obtained glasses are compared with those of ionic glasses of the Ag₄P₂O₇–AgI system.     

Colour centres and thermally stimulated luminescence of Na2ZnCl4

Thermally stimulated luminescence (TSL) of Na₂ZnCl₄ single crystals showed three glow peaks having their peak maxima at 343, 425 and 475 K. Optical absorption (OA) data of unirradiated samples revealed an absorption band at 272 nm while X-irradiation caused additional bands at 462 and 723 nm. Growth and room temperature annealing studies of TSL and OA supported the idea of attribution of 425 K glow peak and 462 nm absorption band to F-centres. The 272 nm OA band is due to Zn²⁺ centres whereas the 723 nm absorption band and 475 K glow peak have been assigned to Zn⁺ centres.     

Erbium-doped tellurite glasses with high quantum efficiency and broadband stimulated emission cross section at 1.5 μm

Optical transitions of Er³⁺ ion in two tellurite glasses of molar composition 75TeO₂:12ZnO:10Na₂O:2PbO:1Er₂O₃ and 75TeO₂:12ZnO:10Na₂O:2GeO₂:1Er₂O₃ were investigated. The measured absorption and emission spectra were analysed by Judd–Ofelt and McCumber theories, in order to obtain radiative transition rates and stimulated emission cross sections. It was found that these glasses have high and broadband absorption and stimulated emission cross sections at 1.5 μm. For the metastable ⁴I_13/2 level, by comparing the measured lifetime with the calculated radiative decay time, quantum efficiency higher than 80% was found.     

Sensitivity enhancement for H2 gas detection using a SnO2–Ag2O–PdOx nanocrystalline system

Thick film H₂ sensors were fabricated using SnO₂ loaded with Ag₂O and PdO_x. The composition that gave highest sensitivity for H₂ was in the wt.% ratio of SnO₂:Ag₂O:PdO_x as 93:5:2. The nano-crystalline powders of SnO₂–Ag₂O–PdO_x composites synthesized by sol–gel method were screen printed on alumina substrates. Fabricated sensors were tested against gases like H₂, CH₄, C₃H₈, C₂H₅OH and SO₂. The composite material was found sensitive against H₂ at the working temperature 125 °C, with minor interference of other gases. H₂ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on SnO₂–Ag₂O–PdO_x nanocrystalline system exhibited high performance, high selectivity and very short response time to H₂ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of H₂.     

Ag-Ag2O/TiO2-g-C3N4纳米复合材料的制备及可见光催化性能

近年来,半导体光催化技术作为一项快速发展的新型环保技术,在降解水体中污染物和可再生清洁能源的生产领域有很大的应用前景。本文以所制备出的20 wt%类石墨烯碳氮化合物(g-C₃N₄)/TiO₂为基质,利用水热法中纳米Ag颗粒部分氧化行为成功合成了Ag修饰异质结型Ag-Ag₂O/TiO₂-g-C₃N₄复合材料。利用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、紫外-可见漫反射光谱(UV-Vis DRS)、光致荧光光谱(PL)、瞬态光电流响应等分析测试手段对Ag-Ag₂O/TiO₂-g-C₃N₄复合材料的晶体结构、形貌、光学性质等进行表征和分析。以亚甲基蓝溶液为目标降解物,研究了Ag-Ag₂O/TiO₂-g-C₃N₄复合材料的可见光催化性能。结果表明:在纳米Ag颗粒修饰的Ag-Ag₂O/TiO₂-g-C₃N₄复合材料中,Ag部分氧化成Ag₂O;与g-C₃N₄的协同作用使Ag-Ag₂O/TiO₂-g-C₃N₄复合催化剂具有良好的可见光催化活性;可见光照射4 h后,Ag-Ag₂O/TiO₂-g-C₃N₄复合催化剂对亚甲基蓝的降解率接近50%。      

Frequency dependent electrical conductivity and dielectric relaxation behavior in amorphous (90V2O5–10Bi2O3) oxide semiconductors doped with SrTiO3

We report on the experimental results of frequency dependent a.c. conductivity and dielectric constant of SrTiO₃ doped 90V₂O₅–10Bi₂O₃ semiconducting oxide glasses for wide ranges of frequency (500–10⁴ Hz) and temperature (80–400 K). These glasses show very large dielectric constants (10²–10⁴) compared with that of the pure base glass (≈10²) without SrTiO₃ and exhibit Debye-type dielectric relaxation behavior. The increase in dielectric constant is considered to be due to the formation of microcrystals of SrTiO₃ and TiO₂ in the glass matrix. These glasses are n-type semiconductors as observed from the measurements of the thermoelectric power. Unlike many vanadate glasses, Long's overlapping large polaron tunnelling (OLPT) model is found to be most appropriate for fitting the experimental conductivity data, while for the undoped V₂O₅–Bi₂O₃ glasses, correlated barrier hopping conduction mechanism is valid. This is due to the change of glass network structure caused by doping base glass with SrTiO₃. The power law behavior (σ_ac=A(ω^s) with s<1) is, however, followed by both the doped and undoped glassy systems. The model parameters calculated are reasonable and consistent with the change of concentrations (x).     

Structural and optical properties of (100 − x)(Li2B4O7) − x(SrO–Bi2O3–0.7Nb2O5–0.3V2O5) glasses and glass nanocrystal composites

Glasses of various compositions in the system (100 − x)(Li₂B₄O₇) − x(SrO–Bi₂O₃–0.7Nb₂O₅–0.3V₂O₅) (10  x  60, in molar ratio) were prepared by splat quenching technique. The glassy nature of the as-quenched samples was established by differential thermal analyses (DTA). The amorphous nature of the as-quenched glasses and crystallinity of glass nanocrystal composites were confirmed by X-ray powder diffraction studies. Glass composites comprising strontium bismuth niobate doped with vanadium (SrBi₂(Nb_0.7V_0.3)₂O_9−δ (SBVN)) nanocrystallites were obtained by controlled heat-treatment of the as-quenched glasses at 783 K for 6 h. High resolution transmission electron microscopy (HRTEM) of the glass nanocrystal composites (heat-treated at 783 K/6 h) confirm the presence of rod shaped crystallites of SBVN embedded in Li₂B₄O₇ glass matrix. The optical transmission spectra of these glasses and glass nanocrystal composites of various compositions were recorded in the wavelength range 190–900 nm. Various optical parameters such as optical band gap (E_opt), Urbach energy (ΔE), refractive index (n), optical dielectric constant and ratio of carrier concentration to the effective mass (N/m^*) were determined. The effects of composition of the glasses and glass nanocrystal composites on these parameters were studied.     

Optical band gap studies on xPb3O4–(1−x)P2O5 lead[(II, IV)] phosphate glasses

A series of glasses in the xPb₃O₄–(1−x)P₂O₅ (red lead phosphate) (RLP) system with ‘x' varying from 0.075 to 0.4 were prepared by the single-step melt quenching process from Pb₃O₄ and NH₄H₂PO₄. The optical absorption spectra of these glasses have been recorded in the ultraviolet region from 200 to 400 nm and the fundamental absorption edges have been identified. The optical band gap E_opt values have been determined for all the glasses using the known theories. The (E_opt) values vary from 4.90 to 3.21 eV the highest being 4.57 eV, corresponding to the most stable glass of x=0.225. The absorption edge is attributed to the indirect transitions and the origin of the Urbach energy ΔE is suggested to be thermal vibrations. These glasses promise as potential candidates for application in optical technology compared to simple xPbO–(1−x)P₂O₅ (lead phosphate) (LP) glasses.     

Photoinduced nonlinear optics in Sb2Se3–BaCl2–PbCl2 glasses

Photoinduced structural transformations in amorphous Sb₂Se₃–BaCl₂–PbCl₂ glasses were studied using a differential IR spectroscopy Fourier technique in the spectral region between 100 and 300 cm⁻¹. A stage of the reversible photodarkening is realized in the Sb₂Se₃ fragments after the first cycle of photoexposure and thermoannealing. The whole scheme of the photo- and thermoinduced transformations in the amorphous system may be explained as a coordination of formation and annihilation of defects. The vibrational density of states calculated using quantum chemical solid state methods confirms our experimental results and their interpretation. Photoinduced photodarkening changes using a CO₂ pulse laser (λ=10.6 μm) in new synthesized Sb₂Se₃–BaCl₂–PbCl₂ glasses were investigated. At the same time we have studied photoinduced second harmonic generation (SHG) and two-photon absorption (TPA). The possibility of using this glass as perspective materials for IR optoelectronics and nonlinear optics was shown.     

Effect of N2O/SiH4 ratio on the properties of low-temperature silicon oxide films from remote plasma chemical vapour deposition

Silicon oxide films have been deposited with remote plasma chemical vapour deposition (RPCVD) at low temperatures (<300 °C) from SiH₄---N₂O. The effect of a gas-phase reaction on the SiO₂ film properties and Si/SiO₂ interface was investigated. As the partial pressure ratio was increased above N₂O/SiH₄ = 4, a gas-phase reaction with powder formation was observed, which degraded film properties, increased surface roughness, and decreased deposition rate. When N₂O/SiH₄ <4, there was no detectable IR absorption in the film associated with hydrogen-related bonds (Si---OH and Si---H) but when N₂O/SiH₄ >4, the incorporation of Si---OH bond became significant and Si¹⁺, intermediate state silicon at the interface, was more abundant. The oxide fixed charge, interface trap density, surface roughness and leakage current were increased when there was powder formation in the gas phase. High plasma power also favoured the powder formation in the gas phase. C---V and I---V characteristics were measured and it was shown that these electrical properties were directly related to the process condition and material properties of the oxide and the Si/SiO₂ interface.     

Corrosion of magnesia–chrome brick in molten MgO–Al2O3–SiO2–CaO–FetO slag

The corrosion of magnesia–chrome (MgO–Cr₂O₃) brick in molten MgO–Al₂O₃–SiO₂–CaO–Fe_tO slag has been characterized using a dynamic rotary slag corrosion testing for various test cycles at 1650 °C. The open porosity decreases from 15.3 to 4.0% for three cycles, then it gradually increases from 4.0 to 4.8% when the test is extended to nine cycles, in which the permeating depth of the slag maintains at about 20 mm. The XRD pattern of the permeated layer shows the presence of the MgO, MgCr₂O₄ and CaMgSiO₄ phases. In the interior of the permeating layer cracks are formed and corrosion starts at the pores and cracks of MgO and decreases gradually. However, at 20–40 mm beneath the permeated layer edge, different shapes of MgO particles are found.     

Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo–TiO2–Al stacks

TiO₂ films were grown by atomic layer deposition on Mo electrodes in order to elucidate the dominating conductance mechanism and its dependence on the growth chemistry. TiCl₄ and Ti(OC₂H₅)₄ served as titanium precursors, and H₂O or H₂O₂ as oxygen precursors. The films grown at lower temperatures were amorphous. With increasing growth temperatures the crystallization first started in the TiCl₄–H₂O process. The films grown in this process were clearly leakier compared to the films grown from Ti(OC₂H₅)₄ and H₂O and from Ti(OC₂H₅)₄ and H₂O₂. In the Ti(OC₂H₅)₄-based processes, the application of H₂O₂ instead of H₂O resulted in the films with considerably lowered conductivity, although structural differences in these films were insignificant. Space–charge-limited currents were prevailing in all our amorphous Mo–TiO₂–Al packages. Measurements at different temperatures suggested quite high trap densities likely due to the presence of impurities and structural disorder, while the strong differences in conductivity seemed to be due to different densities of gap states.     

还原氧化石墨烯@Ag2O改性TiO2基复合材料的制备及其可见光催化性能

制备了还原氧化石墨烯（rGO）@Ag₂O共同改性TiO₂基复合材料（rGO@Ag₂O/TiO₂）,并研究了其可见光催化性能。结果表明,三元复合材料rGO@Ag₂O/TiO₂的可见光催化性能远优于一元纳米TiO₂和二元rGO/TiO₂、Ag₂O/TiO₂复合材料,当可见光照射120 min后,溶液中约100%的罗丹明B分子被rGO@Ag₂O/TiO₂降解。rGO@Ag₂O/TiO₂三元复合材料可见光催化效率的提高主要源于窄带隙半导体Ag₂O和高电导率材料rGO的引入,使形成的rGO@Ag₂O/TiO₂三元复合材料具有强的可见光吸收能力和光生电子空穴对分离能力。     

Preparation and characteristics of Y2O3-doped CeO2 film by r.f. magnetron sputtering

Properties and applications as a pH sensor of Y₂O₃-doped CeO₂ films prepared by r.f. magnetron sputtering were studied. The CeO₂-Y₂O₃ films exhibited higher electric conductivity than yttria-stabilized zirconia. Films deposited on an MgO single-crystal (100) substrate without substrate heating had a more dense structure. The microstructure of the samples deposited at a substrate temperature of 873 K was shown to be columnar by scanning electron microscope. X-ray diffraction studies showed that a (111) diffraction peak assigned to CeO₂ was much greater and the films exhibited preferential orientation to the (111) plane with increasing r.f. power or substrate temperature. The pH electrode was made by a double layer of Y₂O₃-doped CeO₂ and Cu/Cu₂O redox films deposited onto the MgO substrate. pH response was measured in various pH buffer solutions at room temperature. It showed good agreement with a nernstian response in the pH range 9–13.     

Preparation of SiO2 thin films using the Cat-CVD method

Using the catalytic chemical vapor deposition (Cat-CVD) method, a-Si and SiN_x films have been the main focus of studies. SiO₂ films have not been studied because of the limited life of catalysts such as tungsten or molybdenum in an oxidative atmosphere. In this report, we describe oxide film preparation using an iridium catalyst. We determined the most appropriate catalyst material for the oxide film process by exposing heated materials in tetraethoxysilane (TEOS) or O₂ gas. As the result, it was confirmed that the Ir catalyst works in a slow oxidative atmosphere. Using the Ir catalyst, SiO₂ films were deposited in two gas combinations: TEOS and N₂O, and SiH₄ and N₂O. Although the SiO₂ film processed with the combination of TEOS and N₂O was stoichiometric, its breakdown voltage is not sufficient. The SiO₂ film processed with the combination of SiH₄ and N₂O showed good electrical property.     

膨胀石墨/五水硫代硫酸钠相变储能复合材料热性能

五水硫代硫酸钠（Na₂S₂O₃·5H₂O）相变储能材料具有较高的相变潜热、储能密度等,但Na₂S₂O₃·5H₂O存在过冷和相分离,性能较不稳定。添加成核剂K₂SO₄、CaSO₄·2H₂O、Na₄P₂O₇·10H₂O和强化传热材料膨胀石墨（EG）进行改性,制备得到性能稳定的EG/Na₂S₂O₃·5H₂O相变储能复合材料。测试结果显示:K₂SO₄对Na₂S₂O₃·5H₂O的成核性较差,CaSO₄·2H₂O、Na₄P₂O₇·10H₂O均有较好的成核作用,可明显降低Na₂S₂O₃·5H₂O过冷度,但CaSO₄·2H₂O体系不稳定,添加3.0%质量分数的Na₄P₂O₇·10H₂O可使Na₂S₂O₃·5H₂O过冷度降低至1℃以内,0.5%~2.0%质量分数的EG可使其过冷度降低至2℃左右,7.0%质量分数的EG可完全消除体系的相分离。复合相变材料的较优组成为7.0%的EG、3.0%的Na₄P₂O₇·10H₂O和90.0%的Na₂S₂O₃·5H₂O。此时,EG/Na₄P₂O₇·10H₂O/Na₂S₂O₃·5H₂O复合材料相变潜热为192.5 kJ·kg-1,相变时无液态泄露,无相分离,储热时间比纯物质缩短22.3%,放热较快。