驱动电流对复合结构丝GMI效应的影响

通过化学镀方法在直径为90μm的铜丝上制备了NiCoP/Cu复合结构丝,研究了驱动电流幅值和频率对复合丝的巨磁阻抗效应和磁场灵敏度的影响.研究发现驱动电流幅值增加时能显著增强复合丝巨磁阻抗效应和增加磁场灵敏度.电流大小和频率会改变GMI曲线峰值对应磁场Hp.结果可以用磁化过程和非线性效应来解释.     

化学镀CoP/Insulator/BeCu复合结构丝的巨磁阻抗效应研究

采用含复合络合剂的碱性镀液,改变镀液配方组分和工艺条件在绝缘层上合成软磁性良好的CoP合金镀层,制备出CoP/Insulator/BeCu复合结构的巨磁阻抗效应材料.样品采用电流退火进行焦耳热处理.电流退火后,在较低频率下观察到显著的磁阻抗效应,在97kHz时最大磁阻抗效应为991%,磁场灵敏度高达2.78%/(A·m-1);在3kHz～30MHz的频率范围内,磁阻抗比率都在50%以上,具有很宽的频率应用范围.利用复数磁导率探讨材料的磁化特性,发现有效磁导率实部和虚部的频率特性在退火后发生了很大变化.     

三明治结构FeNi/Cu/FeNi多层膜巨磁阻抗效应研究

采用MEMS技术在玻璃基片上制备了三明治结构FeNi/Cu/FeNi多层膜,在1～40 MHz范围内研究了FeNi/Cu/FeNi多层膜中的巨磁阻抗效应特性.当磁场Ha施加在薄膜的长方向时,巨磁阻抗效应随磁场的增加而增加,在某一磁场下达到最大值,然后随磁场的增加而下降到负的巨磁阻抗效应.在频率为5MHz时,巨磁阻抗效应在磁场Ha=800 A/m时达到最大值26.6%.巨磁阻抗效应的最大值及负的巨磁阻抗效应与多层膜中磁各向异性轴的取向及发散有关.另外,当磁场施加在薄膜的短方向时,薄膜表现出负的巨磁阻抗效应,在频率5 MHz、磁场Ha=9600 A/m时,巨磁阻抗效应可达-15.6%.     

化学镀带绝缘层LC共振型复合结构丝的巨磁阻抗效应

研究了LC共振型复合结构丝的巨磁阻抗效应并作了机理分析.用化学镀的方法制备了BeCu/绝缘层/NiCoP复合结构丝,由其自身构成串联LCR共振回路.该LC共振型复合结构丝的巨磁阻抗效应比一般型大幅度增加,长度为11cm的复合结构丝在频率f=24MHz时由一般型的54.7%增加到254.3%,增加了4.65倍.共振频率随复合结构丝长度的增加而减小.巨磁阻抗效应在共振频率附近迅速增强,而远离该频率则明显减小,具有很好的频率选择性.     

同轴电缆结构复合丝巨磁阻抗效应的研究

采用脉冲电沉积工艺在直径为200μm的铜丝表面沉积铁镍合金镀层,形成具有同轴电缆结构的巨磁阻抗复合丝材料。分别改变复合丝磁性外壳厚度与铜丝直径,研究复合丝结构对巨磁阻抗效应的影响。发现巨磁阻抗比值随磁性外壳厚度的增大及铜丝直径的增大而增大,特征频率则向低频端移动。本文还发现在外加直流磁场低于5．57kA／m时,驱动交流电幅值增大,巨磁阻抗效应增大;高于5．57kA／m时,驱动交流电幅值的大小几乎不再影响复合丝的巨磁阻抗效应。在驱动电流上叠加20mA以下的直流偏置对巨磁阻抗效应没有影响。     

FeSiB/Cu/FeSiB多层膜巨磁阻抗效应研究

用磁控溅射法在玻璃基片上制备了FeSiB/Cu/FeSiB多层膜,在100kHz～40MHz范围内研究了FeSiB/Cu/FeSiB多层膜中的巨磁阻抗效应特性.当磁场强度Ha施加在薄膜的长方向时,巨磁阻抗效应随磁场的增加而增加,在某一磁场下达到最大值,然后随磁场的增加而下降到负的巨磁阻抗效应.在频率为3.2MHz时,在磁场强度Ha=2400A/m时巨磁阻抗变化率达到最大值13.50%;在磁场强度Ha=9600A/m时,巨磁阻抗变化率为-9.20%.巨磁阻抗效应的最大值及负的巨磁阻抗效应与多层膜中磁各向异性轴的取向及发散有关.另外,当磁场施加在薄膜的短方向时,薄膜表现出负的巨磁阻抗效应,在频率为3.2MHz,磁场强度Ha=9600A/m时,巨磁阻抗变化率可达-12.50%.     

夹心结构FeNi/Cu/FeNi多层膜巨磁阻抗效应研究

采用MEMS技术在玻璃基片上制备了夹心结构FeNi/Cu/FeNi多层膜,并在1～40MHz范围内研究了它的巨磁阻抗效应.纵向巨磁阻抗效应先随着外加磁场的增大而迅速增加,在某一磁场下达到最大值后随磁场的增加而逐渐减小.在频率为5MHz时,Hext为0.8kA/m时巨磁阻抗效应最大值达到32.06%.另外,夹心结构多层膜表现出较大的负巨磁阻抗效应,在频率5MHz,Hext=9.6kA/m时,负最大巨磁阻抗效应可达-24.50%.     

FeSiB／Cu／FeSiB多层膜巨磁阻抗效应研究

用磁控溅射法在玻璃基片上制备了FeSiB/Cu/FeSiB多层膜,在100kHz-40MHz范围内研究了FeSiB/Cu/FeSiB多层膜中的巨磁阻抗效应特性。当磁场强度Ha施加在薄膜的长方向时,巨磁阻抗效应随磁场的增加而增加,在某一磁场下达到最大值,然后随磁场的增加而下降到负的巨磁阻抗效应。在频率为3.2MHz时,在磁场强度Ha=2400A/m时巨磁阻抗变化率达到最大值13．50％;在磁场强度Ha=9600A/m时,巨磁阻抗变化率为－9．20％。巨磁阻抗效应的最大值及负的巨磁阻抗效应与多层膜中磁各向异性轴的取向及发散有关。另外,当磁场施加在薄膜的短方向时,薄膜表现出负的巨磁阻抗效应,在频率为3．2MHz,磁场强度Ha=9600A/m时,巨磁阻抗变化率可达－12．50％。     

薄膜厚度对多层膜巨磁阻抗效应的影响研究

采用磁控溅射方法在玻璃基片上制备了FeSiB／Cu／FeSiB多层膜,在100kHz～40MHz范围内研究了FeSiB薄膜厚度对FeSiB／Cu／FeSiB多层膜巨磁阻抗效应的影响。当磁场施加在薄膜的纵向时,巨磁阻抗效应随磁场的增加而增加,在某一磁场下达到最大值,然后随磁场的增加而下降到负的巨磁阻抗效应。当FeSiB薄膜的厚度为1．8μm时,在频率3．2MHz、磁场2．4kA／m时,多层膜巨磁阻抗效应达最大值13．5％;在磁场为9．6kA／m时,巨磁阻抗效应为-9．2％。然而,当FeSiB薄膜的厚度为1μm时,多层膜的巨磁阻抗效应在频率40MHz、磁场1．6kA／m时达最大值5．8％。另外,当磁场施加在薄膜的横向时,薄膜表现出负的巨磁阻抗效应。对于膜厚为1．8μm的FeSiB薄膜,在频率5．2MHz、磁场9．6kA／m时,巨磁阻抗效应为-12％。可见巨磁阻抗效应的最大值及负的巨磁阻抗效应与多层膜中磁各向异性轴的取向及FeSiB薄膜的厚度有关。     

BeCu/绝缘层/NiCoP复合结构丝巨磁阻抗效应的研究

利用化学镀方法制备了BeCu/绝缘层/NiCoP复合丝,对细丝在200℃进行热处理以改善铁磁层的磁性,并首次研究了巨磁阻抗效应.结果表明该复合丝在较低频率下有较大的巨磁阻抗效应,在1kHz时磁阻抗比为-3.32%,300kHz时磁阻抗比获得最大值108%.研究了样品退火前后的巨磁阻抗效应和镀层厚度对巨磁阻抗效应的影响.研究表明磁阻抗比不仅取决于△R/R和△X/X,还和R与X的比值相关.     

制备态(Fe88Zr7B5)100-xCux非晶薄膜的磁特性和巨磁阻抗

采用射频溅射法在单晶Si衬底上制备了Fe88Zr7B5)100-xCux(x=0、1、2、3、4)非晶薄膜样品,对其软磁特性和巨磁阻抗(GMI)变化行为进行了测量和研究。测量结果显示,加入适量Cu元素(x=3)的制备态样品具有极好的软磁性能和GMI效应,此样品的矫顽力仅有56A/m,在13MHz的频率下,最大有效磁导率(μe)比和GMI比分别为42.5%和17.0%。研究发现,制备态样品的电阻R、电抗X和阻抗Z都随Cu含量的增加而下降。X=0、4两个样品的μe、R、X、Z对外加磁场响应极不敏感,只有软磁性能优异的x=3样品的μe、R、X、Z才显示出对外加磁场响应敏感,因而有显著的GMI效应。样品拥有高的磁导率、小的矫顽力和低的电阻率是获得大GMI效应的本质条件。     

Giant Magnetoimpedance Effect: Concept and Prediction in Amorphous Materials

Giant magneto impedance (GMI) effect was experimentally measured on as-cast, post-production and coated with chemical technique amorphous wire and ribbon materials consisted of varied chemical composition over a frequency range from 0.1 to 8 MHz under a static magnetic field between ?8 and +8 kA/m. The results show that each amorphous sample has a certain operational frequency for which the GMI effect has maximum magnitude and the other parameters such as annealing and coating have a significant influence on the GMI effect. It is believed that the domain structure and wall mechanism in the material are responsible for this behaviour. A 3-node input layer, 1-node output layer artificial neural network (ANN) model with three hidden layers including 30 neurons and full connectivity between the nodes was developed. A total of 1600 input vectors obtained from varied treated samples was available in the training data set. After the network was trained, better results were obtained from the network formed by the hyperbolic tangent transfer function in the hidden layers, there was a sigmoid transfer function in the output layer and we predicted the GMI. Comparing the predicted values obtained from the ANN model with the experimental data indicates that a well-trained neural network model provides very accurate results.     

Co—Fe—Si—B非晶丝的巨磁阻抗效应研究

用旋转水中纺丝法制成几种不同直径的（Ｃｏ０．９４Ｆｅ０．０６）７２．５Ｓｉ１２．５Ｂ１５非晶丝,对丝进行张力退火后,测试了非晶丝热处理前后的磁阻抗性能。结果表明制成的非晶丝具有明显的巨磁阻抗效应,且巨磁阻抗效应随电流频率不同而表现出正磁阻抗和负磁阻抗两种规律。张力退火对正磁阻抗效应有明显改善,而且对直径小的试样,阻抗对轴向外磁场变化的灵敏度更高。实验得到的最大灵敏度为１２４％／Ｏｅ。     

软磁薄带巨磁阻抗效应的数值分析

利用磁畴壁移动模型以纳米晶软磁合金Ｆｅ７３．５Ｃｕ１Ｎｂ３Ｓｉ１３．５Ｂ９为例对软磁薄带中的巨磁阻抗效应进行了数值分析，结果发现不同的磁导率机制并不能显著发迹巨巨磁阻抗效的大小仅由磁导率对外加磁场的敏感性决定，从趋肤深度的角度讨论了巨磁阻抗效应的频率特性。     

Sensors development using its unusual properties of Fe/Co-based amorphous soft magnetic wire

In this paper, the unusual properties of amorphous soft magnetic wire with Fe-based or Co-based in compositions have been discussed: giant magnetoimpedance effect (GMI), giant stress-induced impedance effect, large Barkhausen effect, magnetostriction effect. Sensor operating principles and applications exploiting these unusual properties have also been discussed: magnetic field sensors, position sensors, biosensors, non-destructive testing sensors, stress sensors etc.     

Equivalent Magnetic Noise Limit of Low-Cost GMI Magnetometer

We present a noise analysis of a giant magnetoimpedance (GMI) sensor using a peak detector at the optimal magnetic field working bias point of a sensor wire, by considering internal noise sources (intrinsic GMI device associated noise sources and conditioning electronic noise sources). An expression is obtained for the theoretical expected noise for known electronic design parameters and physical characteristics of the GMI wire. The most significant contributions to noise in a GMI measurement, using two basic oscillators (either a simple discrete RC oscillator or quartz oscillator) along with a peak detector, are presented. We discuss the expected extrinsic equivalent magnetic noise limit.      

Effects of Electrolytic Current Density on Structural, Magnetic Properties and GMI Behavior in Electrodeposited Bilayer FeNi/Cu Composite Wires

In this article, a systematic study has been performed on structural, magnetic properties and the GMI effect in electrodeposited FeNi/Cu composite wires in the range of current density from j=15.9?mA/cm² to 79.5?mA/cm². Our obtained results reveal a correlation between the structure, magnetic softness, and GMI behavior in prepared wires. Among the samples investigated, the softest magnetic property (lowest coercivity) was found for the wire-sample plated at j=47.7?mA/cm², which arises from the smallest nanograin size. This results in the largest values of GMI ratio and its sensitivity of this sample, which is ascribed to the optimized domain structure with a well-defined circular anisotropy. It is worthy to note that the maximum GMI ratio and the field sensitivity reached the highest values of 90?% and 7?%/Oe for at a measuring frequency of 5 MHz. This result is very promising for developing high-performance GMI-based sensors applications. Our finding demonstrates that the changes in the surface morphology and the microstructure of prepared wires has led to modification of the surface magnetic properties, and hence GMI effect.     

Effects of thickness and heat treatments on giant magnetoimpedance of electrodeposited cobalt on silver wires

We studied the effects of thickness and heat treatments on giant magnetoimpedance (GMI) of cobalt-coated silver wires from 1 kHz to 100 MHz, under axial static magnetic field of 2 kOe. Cobalt, of thickness ranging from 1 to 25 /spl mu/m, was electro-deposited on 47.7-/spl mu/m-diameter silver wires. The frequency dependence of GMI varied with cobalt thickness with a maximum of 176% in 10-/spl mu/m-thick cobalt at the characteristic frequency 2 MHz. The characteristic frequency decreased with increasing thickness of cobalt layer but it was rather insensitive to dc Joule heating and conventional furnace annealing. However, both heat treatments led to magnetic hardening and decrease in GMI ratio. Joule heating also induced anisotropy in wire structures normally dominated by axial anisotropy.     

From Manipulation of Giant Magnetoimpedance in Thin Wires to Industrial Applications

We present results on our studies of soft magnetic properties and Giant magnetoimpedance, GMI, effect in thin microwires at elevated frequencies paying special attention to tailoring the GMI effect and achievement of high GMI effect with low hysteretic behavior. We measured magnetic field, H, dependence of real part, of the longitudinal wire impedance up to frequency, f, 4 GHz in Co-rich microwires. Amorphous microwires of appropriate composition exhibit extremely soft magnetic properties with low coercivity (generally below 10 A/m) with well defined magnetic anisotropy field, H _k . We report a number of interesting for sensor applications phenomena such as stress-impedance effect and stress sensibility of overall hysteresis loop shape. Field dependence of the off-diagonal voltage response of pulsed GMI effect in nearly-zero magnetostriction (λ _s≈?3×10^?7) microwires exhibits anti-symmetrical shape, suitable for industrial applications. We observed that the magnetic field dependence of GMI ratio can be tailored either controlling magnetoelastic anisotropy of as-prepared microwires or by heat treatment. Composite character of such microwires results in the appearance of additional magnetoelastic anisotropy. We found that if the surface anisotropy is not circumferential, then the magnetization, and consequently, the MI curve Z(H) present hysteresis. This hysteresis can be suppressed by application of sufficiently high DC bias current I _B that creates a circumferential bias field H _B.