高频SAW器件的高精度频率调整

UHF以上高频高精度声表面波(SAW)器件,是CATV和光通信等新型装置的关键器件.本文主要叙述500—1000MHz SAW器件的高精度频率调整.在制有SAW元件的石英基片上用磁控溅射法沉积一层超薄的SiO_2膜,通过控制膜的厚度和物理性质精确调整SAW器件的工作频率.把紫外光照射到这种超薄膜上,石英基片上的SAW相速发生变化,便能进行频率调整.在UHF频带内调整精度可达±10kHz,而器件的插入损耗的增加在1dB以下.     

CCD-SAW器件在雷达信号处理中的应用

表面声波器件(SAW)及电荷耦合器件(CCD)是七十年代初相继问世的两类先进模拟器件,由于它们具有许多独特的优点,目前国内外已开始应用于雷达信号处理技术中。本文就CCD器件、SAW器件及CCD—SAW器件的组合在雷达信号处理中的应用作了综述,重点叙述在匹配滤波、频谱分析、动目标显示及脉冲多卜勒信号处理等技术中的应用。比较了CCD与SAW器件的性能,报导了SAW脉压、CCD动目标显示及CCD—SAW脉冲多卜勒信号处理实验结果。CCD、SAW及其组合作为新一代的小型化模拟器件,在雷达信号处理中的应用具有十分广阔的前景。     

SAW器件封装技术概述

小型化和多功能化是SAW器件发展的主要动力,回顾了SAW器件封装的发展历史,介绍了金属封装、塑料封装、SMD封装各自的特点,详述了芯片倒装技术及芯片尺寸SAW封装技术,将通用芯片倒装技术和SAW封装的特点结合,使封装尺寸减小到极限,对今后的复合封装进行了展望。     

SAW器件封装技术概述

小型化和多功能化是SAW器件发展的主要动力。文章回顾了SAW器件封装的发展历史,介绍了金属封装、塑料封装、SMD封装各自的特点,详述了芯片倒装技术及芯片尺寸SAW封装(Chip Sized SAW Package,CSSP)技术,将通用芯片倒装技术(Flip Chip Bonding,FCB)和SAW封装的特点结合,使封装尺寸减小到极限。然后对今后的复合封装进行了展望。     

一种声表面波器件的新型晶圆级封装技术

总结了声表面波(SAW)器件传统封装技术中存在的问题,提出了一种SAW器件新型晶圆级封装技术。采用一种有机物干膜,分别经两次压膜、曝光和显影完成了对SAW芯片在划片前的封装,并用实验进行了验证。实验结果表明,本技术具有在不改变叉指换能器(IDT)质量负载的情况下同时具备吸声的功能,改善器件的带外抑制能力,增强了产品的一致性和可靠性。本技术在SAW器件的封装方面有广阔的应用前景。     

声表面波器件

作为声表面波(SAW)技术的应用实例,本文描述了滤波器和信号处理器件的现状.文章特别提到,可将波控制在表面的电极构成法和微细加工技术的进步与SAW器件的发展背景密切相关,今后的目标之一就是期待SAW器件能以其模拟信号处理功能与数字器件并存发展.     

高频高功能SAW器件应用领域的扩展

目前,SAW器件广泛用于消费类产品和工业通讯设备中的振荡器以及IF滤波器处理10MHz—1GHz的模拟信号。由于高频SAW功能器件及其封装技术的发展,预计SAW器件的应用领域将获得进一步的扩大。本文将着重论述用于UHF段振荡器和无线电设备前端的低损耗SAW滤波器和SMT兼容SAW滤波器。     

文摘选辑

一、声表面波技术 118 SAW器件的最新动向——Watanabe T.:NEC Res.Dev.,1988;(88)1—11 介绍了高性能SAW器件研制的最新技术动向,发现了温度系数极小的SAW器件用晶体切割面,制成了可导出最佳解(为获得所期望的频响特性)的计算机辅助设计工具,探明了器件微型化工艺极限。采用电子束注入法试制了光纤通讯系统用3.99GHz定时滤波器,文章还介绍了其他一些SAW器件的应用。     

传统SAW离子束调频技术研究

制作传统声表面波(SAW)器件晶圆芯片表面的材料是Al,Al在空气中被氧化,极易生成致密的氧化铝(Al_2O_3)薄膜,由于Al_2O_3薄膜和Al及基底压电材料的刻蚀速率存在差异,会导致SAW的离子束调频过程复杂。该文介绍了一种用于SAW的离子束调频方法,采用该方法对制作的SAW器件进行离子束调频后,实现了目标频率的调高和调低,并进一步提高了频率集中度,从而解决了低频窄带SAW器件及2 GHz以上SAW高频器件频率精度难以提高的工艺难题。     

文摘选辑

(一)声表面波技术257 军事通讯、雷达和电子战系统用的SAW器件—(Hartman C.S.et al.)《Mi-crowave J.》25 7(1982)73—86评述用于通讯、雷达和电子战系统的SAW器件的现有水平,概述横向滤波器的工作原理和设计原则及其他SAW器件,总结了现有的性能参数,指出了军用SAW器件研制的原因.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.